JPH0571188B2 - - Google Patents
Info
- Publication number
- JPH0571188B2 JPH0571188B2 JP61184808A JP18480886A JPH0571188B2 JP H0571188 B2 JPH0571188 B2 JP H0571188B2 JP 61184808 A JP61184808 A JP 61184808A JP 18480886 A JP18480886 A JP 18480886A JP H0571188 B2 JPH0571188 B2 JP H0571188B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- layer
- doped
- emitter
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 65
- 230000004888 barrier function Effects 0.000 claims description 19
- 239000002784 hot electron Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 20
- 239000012535 impurity Substances 0.000 description 18
- 230000000694 effects Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
- H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61184808A JPS6340370A (ja) | 1986-08-05 | 1986-08-05 | ホツト・エレクトロン・トランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61184808A JPS6340370A (ja) | 1986-08-05 | 1986-08-05 | ホツト・エレクトロン・トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6340370A JPS6340370A (ja) | 1988-02-20 |
| JPH0571188B2 true JPH0571188B2 (enrdf_load_stackoverflow) | 1993-10-06 |
Family
ID=16159651
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61184808A Granted JPS6340370A (ja) | 1986-08-05 | 1986-08-05 | ホツト・エレクトロン・トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6340370A (enrdf_load_stackoverflow) |
-
1986
- 1986-08-05 JP JP61184808A patent/JPS6340370A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6340370A (ja) | 1988-02-20 |
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