JPH0571144B2 - - Google Patents
Info
- Publication number
- JPH0571144B2 JPH0571144B2 JP85204170A JP20417085A JPH0571144B2 JP H0571144 B2 JPH0571144 B2 JP H0571144B2 JP 85204170 A JP85204170 A JP 85204170A JP 20417085 A JP20417085 A JP 20417085A JP H0571144 B2 JPH0571144 B2 JP H0571144B2
- Authority
- JP
- Japan
- Prior art keywords
- charge
- funnel
- gate electrode
- transfer
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000012546 transfer Methods 0.000 claims description 168
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 29
- 229920005591 polysilicon Polymers 0.000 description 29
- 239000000758 substrate Substances 0.000 description 27
- 239000004065 semiconductor Substances 0.000 description 25
- 238000010586 diagram Methods 0.000 description 22
- 238000009792 diffusion process Methods 0.000 description 15
- 230000002829 reductive effect Effects 0.000 description 12
- 230000008859 change Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 230000004044 response Effects 0.000 description 9
- 230000005669 field effect Effects 0.000 description 6
- 238000007667 floating Methods 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 5
- 230000009977 dual effect Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000001934 delay Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
- H10F39/1534—Interline transfer
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/650,615 US4612580A (en) | 1984-09-14 | 1984-09-14 | TDM-input electrometer, as in a line transfer CCD imager, using a charge funnel |
| US650615 | 1984-09-14 | ||
| US740821 | 1985-06-03 | ||
| US06/740,821 US4612579A (en) | 1985-06-03 | 1985-06-03 | Time-division-multiplex clocking of multiple-charge-tunnel CCD structures, such as line-transfer CCD imagers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6177361A JPS6177361A (ja) | 1986-04-19 |
| JPH0571144B2 true JPH0571144B2 (enrdf_load_stackoverflow) | 1993-10-06 |
Family
ID=27095909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60204170A Granted JPS6177361A (ja) | 1984-09-14 | 1985-09-13 | 電荷結合装置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS6177361A (enrdf_load_stackoverflow) |
| FR (1) | FR2570565B1 (enrdf_load_stackoverflow) |
| GB (1) | GB2164493B (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2003258451A1 (en) | 2003-09-18 | 2005-04-06 | Photonfocus Ag | Optoelectronic detector with multiple readout nodes and its use thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3811055A (en) * | 1971-12-13 | 1974-05-14 | Rca Corp | Charge transfer fan-in circuitry |
| US3971003A (en) * | 1974-11-18 | 1976-07-20 | Rca Corporation | Charge coupled device imager |
| JPS5921189B2 (ja) * | 1978-10-30 | 1984-05-18 | 松下電子工業株式会社 | 電荷転送装置 |
| US4381516A (en) * | 1980-04-03 | 1983-04-26 | Matsushita Electric Industrial Co., Ltd. | Charge-coupled device having a channel and an electrode for changing a transfer direction of charge signals |
| US4398301A (en) * | 1980-09-11 | 1983-08-09 | Fairchild Camera & Instrument Corporation | Multiple preamplifiers with intervening overflow cell for charge coupled imaging devices |
| JPS58209269A (ja) * | 1982-05-31 | 1983-12-06 | Toshiba Corp | 固体撮像装置 |
-
1985
- 1985-09-06 GB GB08522161A patent/GB2164493B/en not_active Expired
- 1985-09-13 JP JP60204170A patent/JPS6177361A/ja active Granted
- 1985-09-13 FR FR858513606A patent/FR2570565B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB2164493A (en) | 1986-03-19 |
| GB2164493B (en) | 1989-01-18 |
| FR2570565B1 (fr) | 1989-04-14 |
| JPS6177361A (ja) | 1986-04-19 |
| GB8522161D0 (en) | 1985-10-09 |
| FR2570565A1 (fr) | 1986-03-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4242700A (en) | Line transfer CCD imagers | |
| US3883437A (en) | Monolithic IR detector arrays with direct injection charge coupled device readout | |
| JP3249819B2 (ja) | イメージセンサ | |
| US4598321A (en) | CCD imagers with registers partitioned for simultaneous charge transfers in opposing directions | |
| US4498105A (en) | Field-transfer CCD imagers with reference-black-level generation capability | |
| US4539596A (en) | CCD Imagers with interleaved image registers using opposed directions of charge transfer | |
| JPH0578946B2 (enrdf_load_stackoverflow) | ||
| JP2572743B2 (ja) | 多重線型電荷転送アレイ | |
| EP0455801A1 (en) | Image sensor | |
| US4481538A (en) | Overcoming flicker in field-interlaced CCD imagers with three-phase clocking of the image register | |
| US4507684A (en) | Reducing grain in multi-phase-clocked CCD imagers | |
| US4612580A (en) | TDM-input electrometer, as in a line transfer CCD imager, using a charge funnel | |
| US5393997A (en) | CCD having transfer electrodes of 3 layers | |
| GB2244863A (en) | CCD image sensor | |
| US4291239A (en) | Architecture line-transfer CCD imagers | |
| EP0663763A2 (en) | CCD image sensor having reduced photodiode-to-photodiode crosstalk | |
| JP2007201160A (ja) | 電荷結合素子 | |
| KR100193408B1 (ko) | 고체 촬상 장치 | |
| US4607286A (en) | Removal of line selection artifacts from trace portions of line transfer CCD imager video output signals | |
| JPH05199465A (ja) | 電荷結合撮像デバイスとそのような撮像デバイスを備えるカメラ | |
| US6392260B1 (en) | Architecture for a tapped CCD array | |
| JPH0571144B2 (enrdf_load_stackoverflow) | ||
| US5760430A (en) | Charge transfer device and solid-state imaging apparatus using the same device | |
| JPH05211325A (ja) | Ｃｃｄ映像素子 | |
| US4612579A (en) | Time-division-multiplex clocking of multiple-charge-tunnel CCD structures, such as line-transfer CCD imagers |