JPS6177361A - 電荷結合装置 - Google Patents
電荷結合装置Info
- Publication number
- JPS6177361A JPS6177361A JP60204170A JP20417085A JPS6177361A JP S6177361 A JPS6177361 A JP S6177361A JP 60204170 A JP60204170 A JP 60204170A JP 20417085 A JP20417085 A JP 20417085A JP S6177361 A JPS6177361 A JP S6177361A
- Authority
- JP
- Japan
- Prior art keywords
- charge
- funnel
- channel
- gate electrode
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012546 transfer Methods 0.000 claims description 159
- 239000000758 substrate Substances 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 26
- 230000004044 response Effects 0.000 claims description 11
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 28
- 229920005591 polysilicon Polymers 0.000 description 28
- 238000010586 diagram Methods 0.000 description 20
- 238000009792 diffusion process Methods 0.000 description 14
- 230000002829 reductive effect Effects 0.000 description 12
- 230000008859 change Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 230000005669 field effect Effects 0.000 description 6
- 238000007667 floating Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 230000003068 static effect Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
- H10F39/1534—Interline transfer
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/650,615 US4612580A (en) | 1984-09-14 | 1984-09-14 | TDM-input electrometer, as in a line transfer CCD imager, using a charge funnel |
| US650615 | 1984-09-14 | ||
| US740821 | 1985-06-03 | ||
| US06/740,821 US4612579A (en) | 1985-06-03 | 1985-06-03 | Time-division-multiplex clocking of multiple-charge-tunnel CCD structures, such as line-transfer CCD imagers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6177361A true JPS6177361A (ja) | 1986-04-19 |
| JPH0571144B2 JPH0571144B2 (enrdf_load_stackoverflow) | 1993-10-06 |
Family
ID=27095909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60204170A Granted JPS6177361A (ja) | 1984-09-14 | 1985-09-13 | 電荷結合装置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS6177361A (enrdf_load_stackoverflow) |
| FR (1) | FR2570565B1 (enrdf_load_stackoverflow) |
| GB (1) | GB2164493B (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2003258451A1 (en) | 2003-09-18 | 2005-04-06 | Photonfocus Ag | Optoelectronic detector with multiple readout nodes and its use thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5561068A (en) * | 1978-10-30 | 1980-05-08 | Matsushita Electronics Corp | Charge transfer device |
| JPS58209269A (ja) * | 1982-05-31 | 1983-12-06 | Toshiba Corp | 固体撮像装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3811055A (en) * | 1971-12-13 | 1974-05-14 | Rca Corp | Charge transfer fan-in circuitry |
| US3971003A (en) * | 1974-11-18 | 1976-07-20 | Rca Corporation | Charge coupled device imager |
| US4381516A (en) * | 1980-04-03 | 1983-04-26 | Matsushita Electric Industrial Co., Ltd. | Charge-coupled device having a channel and an electrode for changing a transfer direction of charge signals |
| US4398301A (en) * | 1980-09-11 | 1983-08-09 | Fairchild Camera & Instrument Corporation | Multiple preamplifiers with intervening overflow cell for charge coupled imaging devices |
-
1985
- 1985-09-06 GB GB08522161A patent/GB2164493B/en not_active Expired
- 1985-09-13 JP JP60204170A patent/JPS6177361A/ja active Granted
- 1985-09-13 FR FR858513606A patent/FR2570565B1/fr not_active Expired
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5561068A (en) * | 1978-10-30 | 1980-05-08 | Matsushita Electronics Corp | Charge transfer device |
| JPS58209269A (ja) * | 1982-05-31 | 1983-12-06 | Toshiba Corp | 固体撮像装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2164493A (en) | 1986-03-19 |
| GB2164493B (en) | 1989-01-18 |
| FR2570565B1 (fr) | 1989-04-14 |
| GB8522161D0 (en) | 1985-10-09 |
| FR2570565A1 (fr) | 1986-03-21 |
| JPH0571144B2 (enrdf_load_stackoverflow) | 1993-10-06 |
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