JPH0569295B2 - - Google Patents

Description

[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a semiconductor integrated circuit device, and particularly to improvement of a semiconductor integrated circuit device using multilayer interconnection formed by incorporating each element of an integrated circuit on a semiconductor substrate. This is related.

[Conventional technology]

It has been known that in this type of semiconductor integrated circuit device, the circuit characteristics of the device are affected by the arrangement of the wiring portion, especially the Al wiring layer. In other words, for example, when processing signals using minute current levels, there is the problem of noise coming from the outside and entering the circuit, or the problem of GND floating in power ICs.
Each of these causes deterioration of the characteristics of the semiconductor integrated circuit device.

[Problem that the invention seeks to solve]

As described above, for conventional semiconductor integrated circuit devices, it is necessary to pay close attention to the layout of the Al wiring layer in accordance with the circuit function, and this imposes significant restrictions on circuit design. There was a problem.

This invention was made to improve these conventional problems, and its purpose is to protect integrated circuits from external noise and also to prevent characteristic deterioration due to GND floating. An object of the present invention is to provide a semiconductor integrated circuit device of this type.

[Means for solving problems]

In order to achieve the above object, a semiconductor integrated circuit device according to the present invention is a semiconductor integrated circuit device with multilayer wiring, in which at least each of the integrated circuits constituting the integrated circuit includes a semiconductor element having a collector region, a base region, and an emitter region. The entire surface of the element and each of the lower Al wiring layers is covered with the upper Al wiring layer, which is essentially GND, via the interlayer insulating film, and the Al wiring layer penetrates the interlayer insulating film. and connected to the emitter area.

[Effect]

In this invention, each element constituting an integrated circuit and the entire surface of each lower Al wiring layer are covered with the upper Al wiring layer as GND via an interlayer insulating film. By penetrating the interlayer insulating film and connecting the Al wiring layer to the emitter region, the integrated circuit structure itself can be shielded by GND, which is one of the standards for circuit operation.

〔Example〕

Hereinafter, one embodiment of a semiconductor integrated circuit device according to the present invention will be described in detail with reference to the accompanying drawings.

The accompanying drawing is a partial cross-sectional view showing the configuration of main parts when this embodiment is applied to a semiconductor integrated circuit device using a bipolar multilayer wiring structure.

In the accompanying drawings, reference numeral 1 indicates a silicon semiconductor substrate, 2 an element isolation diffusion layer, and 3 a floating collector diffusion layer. In addition, 4 is a resistive element region formed by base diffusion, etc., and 5, 6, and 7 are
The collector, base, and
and each area of the emitter, and 8 is the first
The Al wiring layer 9 is a second layer that covers at least each of the required elements as well as almost the entire surface of the first layer Al wiring layer etc. with an interlayer insulating film 10 interposed. This is an Al wiring layer.

Note that a part of the second Al wiring layer 9 penetrates through the interlayer insulating film 10 to form the silicon semiconductor substrate 1.
It is electrically connected to an emitter formation region 7 formed on the surface of the emitter.

In other words, in the device configuration according to this embodiment, the surface parts of the resistive elements, transistors, and Al wiring layers that make up the integrated circuit are covered with an Al wiring layer that serves as the overall GND. Therefore, it can be substantially shielded.

In the above embodiments, the case where the present invention is applied to a bipolar type semiconductor integrated circuit device has been described, but it is of course applicable to other types of semiconductor integrated circuit devices, such as a MOS type semiconductor integrated circuit device. It is applicable not only to Al wiring layers but also to cases where there are more than one Al wiring layer, and similar effects can be obtained.

〔Effect of the invention〕

As detailed above, according to the present invention, in a semiconductor integrated circuit device with multilayer wiring, at least the necessary The entire surface area of each element area and each Al wiring layer on the lower layer side,
Since it is covered by the upper Al wiring layer via the interlayer insulating film, and the Al wiring layer penetrates the interlayer insulating film and connects to the emitter region,
This upper Al wiring layer acts as a GND and can essentially shield these circuit components from the outside, and this configuration can prevent external noise from entering the integrated circuit. At the same time, it can effectively prevent the deterioration of circuit characteristics due to GND floating, and the voltage drop due to the Al wiring layer is also small, and the structure is extremely simple and can be easily implemented. It is something that you have.

[Brief explanation of the drawing]

The accompanying drawing is a sectional view of a main part showing a schematic configuration of an embodiment of a semiconductor integrated circuit device according to the present invention. 1... Silicon semiconductor substrate, 2... Inter-element isolation diffusion layer, 3... Floating collector diffusion layer,
4...Resistance element area, 5, 6, and 7...
The collector, base, and
and emitter region, 8...first layer (lower layer) Al
Wiring layer, 9... Second layer (upper layer) Al wiring layer, 10
...Interlayer insulating film.

Claims (1)

[Scope of Claims] 1. A semiconductor integrated circuit device using multilayer wiring configured by incorporating each element of an integrated circuit including a semiconductor element in which a collector region, a base region, and an emitter region are formed on a semiconductor substrate, comprising: At least each element of the circuit and the surface part of each Al wiring layer on the lower layer side are covered with the upper Al wiring layer which becomes substantially GND via an interlayer insulating film, and the Al wiring layer on the upper layer A semiconductor integrated circuit device characterized in that a layer passes through the interlayer insulating film and is connected to the emitter region.