JPH056915A - Electrode pad structure of semiconductor device - Google Patents

Electrode pad structure of semiconductor device

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Publication number
JPH056915A
JPH056915A JP3155013A JP15501391A JPH056915A JP H056915 A JPH056915 A JP H056915A JP 3155013 A JP3155013 A JP 3155013A JP 15501391 A JP15501391 A JP 15501391A JP H056915 A JPH056915 A JP H056915A
Authority
JP
Japan
Prior art keywords
film
electrode pad
layer
insulating film
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP3155013A
Other languages
Japanese (ja)
Inventor
Junichi Goto
順一 後藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
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Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3155013A priority Critical patent/JPH056915A/en
Publication of JPH056915A publication Critical patent/JPH056915A/en
Withdrawn legal-status Critical Current

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Abstract

PURPOSE:To improve the close contact property of a titanium compound with an insulating film by a method wherein the insulating film is formed of a silicon dioxide film, a phosphosilicate glass film or a boron-doped phosophosilicate glass film and an electrode pad is formed as a two-layer or three-layer structure composed of an aluminum film and a titanium compound film. CONSTITUTION:As the lowermost layer in which an electrode pad comes into contact with an insulating film 1 or film 2 whose close contact property with the insulating film 1 or 6 is good such as pure Al, Al-Si, Al-Cu-Si or the like is used. A film 3 composed of a Ti composed, e.g. Ti and TiN, is deposited on it; the upper-most layer formed of an Al compound film 4. Thereby, a three- layer structure is formed. Alternatively, a two-layer structure composed of 3 and 7 may be used. As the insulating film 1 or 6, a PSG film, a polyimide, an SiO2 film, a B-PSG film or the like is used. Thereby, since the close contact property of the insulating film with an interconnection such as Al or the like is enhanced, it is possible to eliminate an interlayer exfoliation due to a stress in a wire bonding operation as a posterior process.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は，半導体装置の製造方
法，特に，ワイヤボンデイング時の下地膜との剥離防止
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly to prevention of peeling from a base film during wire bonding.

【０００２】近年の半導体，特に微細プロセスを用いる
先端の半導体品種では，コンタクト性の改善，ストレス
マイグレーションによるアルミニウム(Al)配線の断線等
の対策として, チタン(Ti)や窒化チタン(TiN) からなる
Ti化合物をバリアメタルに使用する例が増えている。Recent semiconductors, in particular, advanced semiconductor products using fine processing, are made of titanium (Ti) or titanium nitride (TiN) as a measure for improving contactability and breaking aluminum (Al) wiring due to stress migration.
There are increasing examples of using Ti compounds as barrier metals.

【０００３】ところが, Ti化合物は燐珪酸ガラス(PSG)
膜等の下地絶縁膜との密着性が悪いため, 後工程のワイ
ヤーボンディング時にAl配線下のTi化合物と絶縁膜との
間で, 層間剥離を生ずるという問題があった。However, Ti compounds are phosphosilicate glass (PSG)
Since the adhesion to the underlying insulating film such as a film is poor, there is a problem that delamination occurs between the Ti compound under the Al wiring and the insulating film at the time of wire bonding in the subsequent process.

【０００４】そのため, ワイヤの剥離を生じないチップ
の構造が必要となっていた。Therefore, there has been a need for a chip structure that does not cause wire separation.

【０００５】[0005]

【従来の技術】図２は従来例の説明図である。図におい
て，９は B-PSG膜，10はTi化合物膜, 11はAl, Al合金
膜,12はAlまたは金(Au)ワイヤである。2. Description of the Related Art FIG. 2 is an explanatory view of a conventional example. In the figure, 9 is a B-PSG film, 10 is a Ti compound film, 11 is Al, Al alloy film, and 12 is Al or gold (Au) wire.

【０００６】従来の半導体装置の微細プロセスでは, 図
２（ａ）に示すように，下地絶縁膜に平坦性の良好なボ
ロンドープ燐珪酸ガラス(B-PSG)膜９を使用し, その上
にTiや TiNからなるTi化合物膜10をバリアメタルとして
積層し, その上に純Al, 或いは, Al- シリコン(Si), A
l-Si- 銅(Cu)等のAl合金膜の電極配線並びにパッドを形
成し, パッド上にAlまたはAuワイヤをボンディングする
構造をとっていた。In a conventional fine process of a semiconductor device, as shown in FIG. 2A, a boron-doped phosphosilicate glass (B-PSG) film 9 having a good flatness is used as a base insulating film, and a Ti film is further formed thereon. A Ti compound film 10 made of TiN or TiN is laminated as a barrier metal, and pure Al, Al-silicon (Si), A
The electrode wiring and pad of Al alloy film such as l-Si-copper (Cu) were formed, and Al or Au wire was bonded on the pad.

【０００７】ところが, B-PSG膜９とTi化合物10は密着
性が悪いため, 図２（ｂ）に示すように，ワイヤーボン
ディング時のストレスにより層間クラックを生じて, ボ
ンディングワイヤのB-PSG 膜９からの剥離を発生させて
いた。However, since the adhesion between the B-PSG film 9 and the Ti compound 10 is poor, as shown in FIG. 2 (b), stress during wire bonding causes interlayer cracking, and the B-PSG film of the bonding wire is formed. The peeling from 9 occurred.

【０００８】[0008]

【発明が解決しようとする課題】このように, B-PSG膜
９とTi化合物膜10は密着性が悪いため，ワイヤーボンデ
ィングのストレスにより層間クラックを生じ，剥離を発
生させていたが, 本不良モードが必ずしもワイヤーボン
ディング時に直ちに剥離を生じるわけではなく，ワイヤ
ー引張試験の際に強度不足として発見される場合もあっ
て, その発見が甚だ厄介で, 製品出荷後, ユーザー使用
中にフィールド障害となって発生すると大きな問題とな
る。As described above, since the B-PSG film 9 and the Ti compound film 10 have poor adhesion, an interlayer crack was caused by the stress of wire bonding and peeling occurred. The mode does not always cause immediate peeling during wire bonding, and it is sometimes found as insufficient strength during the wire tension test, which is extremely troublesome, and after shipping the product, it becomes a field obstacle during user use. When it occurs, it becomes a big problem.

【０００９】従って，有効なスクリーニングの方法もな
いため，安定した量産製造が出来ず，歩留り低下等の問
題を生じていた。本発明は, 根本原因であるTi化合物と
絶縁膜間の密着性を改善することにより，ワイヤーボン
ディング時の不具合をなくし，安定した半導体装置の製
造方法を得ることを目的とする。Therefore, since there is no effective screening method, stable mass production cannot be performed, and problems such as a decrease in yield occur. An object of the present invention is to improve the adhesiveness between the Ti compound and the insulating film, which is the root cause, to eliminate problems during wire bonding and to obtain a stable method for manufacturing a semiconductor device.

【００１０】[0010]

【課題を解決するための手段】図１は本発明の原理説明
図である。図において，１はSiO2膜， PSG膜，２は下層
Al，Al合金膜，３はTi化合物膜，４は上層Al，Al合金
膜，５はAlまたはAuワイヤ，６は B-PSG膜，７はAl，Al
合金膜，８はポリイミド，シリコーン樹脂膜である。FIG. 1 is a diagram for explaining the principle of the present invention. In the figure, 1 is a SiO 2 film, PSG film, and 2 is a lower layer.
Al, Al alloy film, 3 Ti compound film, 4 upper layer Al, Al alloy film, 5 Al or Au wire, 6 B-PSG film, 7 Al, Al
The alloy film 8 is a polyimide or silicone resin film.

【００１１】まず，Al配線構造を次のようにすると良
い。絶縁膜と接する最下層として，純Al，AlーSi，Alー
CuーSi等, 絶縁膜と密着性の良好な膜を使用し, Ti化合
物, 例えばTiとTiN をその上に積み, 最上層は上記のよ
うなAl化合物としたサンドイッチ構造をとる。First, the Al wiring structure should be as follows. As the bottom layer in contact with the insulating film, pure Al, Al-Si, Al-
A film with good adhesion to the insulating film, such as Cu-Si, is used, and a Ti compound, such as Ti and TiN, is stacked on top of it, and the uppermost layer has a sandwich structure with the Al compound as described above.

【００１２】或いは, 電極パッド下のみTi化合物を抜い
た構造としても良い。次に, 絶縁膜構造は次のようにす
ると良い。Al化合物と密着性の良い PSG膜，ポリイミ
ド，SiO2膜等を使用する。Alternatively, the Ti compound may be removed only under the electrode pad. Next, the insulating film structure should be as follows. Use PSG film, polyimide, SiO 2 film, etc., which have good adhesion to Al compounds.

【００１３】PSG膜を使用する場合には，必ず前記Al配
線構造と組み合わせて行うようにする。即ち, 本発明の
目的は, 絶縁膜で被覆された半導体基板上のボンディン
グワイヤ接続用電極パッド部分の構造において,図１
（ａ）に示すように，絶縁膜がSiO2膜, 或いは PSG膜１
からなり, かつ,電極パッドが下層にAl，Al合金膜２,
中間層にTi化合物膜３, 上層にAl，Al合金膜４の三層構
造からなることにより，図１（ｂ）に示すように，絶縁
膜が B-PSG膜６からなり, かつ, 電極パッドが下層にA
l，Al合金膜２, 中間層にTi化合物膜３, 上層にAl膜, A
l合金膜の三層構造からなることにより，図１（ｃ）に
示すように，電極パッド周縁が下層にTi化合物膜３, 上
層にAl，Al合金膜７の二層構造からなり，かつ，電極パ
ッド部はAl膜, Al合金膜のみの一層からなることによ
り，図１（ｄ）に示すように，電極パッドが下層ににTi
化合物膜３, 上層にAl，Al合金膜７の二層構造からな
り，かつ，ワイヤボンディング後，パッド部のAlまたは
Auワイヤ５にポリイミド或いは，シリコーン等の樹脂膜
８を被覆することにより達成される。When the PSG film is used, it must be used in combination with the Al wiring structure. That is, the object of the present invention is to provide a structure of an electrode pad portion for bonding wire connection on a semiconductor substrate covered with an insulating film as shown in FIG.
As shown in (a), the insulating film is SiO 2 film or PSG film 1
And the electrode pad is the lower layer of Al, Al alloy film 2,
As shown in Fig. 1 (b), the insulating film consists of the B-PSG film 6 and the electrode pad due to the three-layer structure of the Ti compound film 3 as the intermediate layer and the Al and Al alloy film 4 as the upper layer. Is in the lower layer
l, Al alloy film 2, Ti compound film 3 on the intermediate layer, Al film on the upper layer, A
Since it has a three-layer structure of an alloy film, as shown in FIG. 1 (c), the periphery of the electrode pad has a two-layer structure of a Ti compound film 3 as a lower layer and an Al, Al alloy film 7 as an upper layer, and Since the electrode pad consists of a single layer of Al film and Al alloy film, as shown in Fig. 1 (d), the electrode pad is formed on the lower layer of Ti.
It has a two-layer structure of a compound film 3 and Al and an Al alloy film 7 on the upper layer.
This is achieved by coating the Au wire 5 with a resin film 8 such as polyimide or silicone.

【００１４】[0014]

【作用】本発明では，実施例に記入した図１〜４の構造
を使用することにより，絶縁膜〜Al配線間の密着性が良
くなるため，後工程のワイヤボンディング時においても
ワイヤ剥離等の不具合を生じにくい。In the present invention, by using the structure shown in FIGS. 1 to 4 described in the embodiment, the adhesion between the insulating film and the Al wiring is improved. Less likely to cause defects.

【００１５】従って，どのような絶縁膜と電極パッドの
組合せでも電極ワイヤの層間剥離を未然に防ぐことが可
能となる。Therefore, it is possible to prevent delamination of the electrode wires before any combination of the insulating film and the electrode pad.

【００１６】[0016]

【実施例】図１は本発明の原理説明図兼実施例の説明図
である。図１により，本発明の各実施例について説明す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a diagram for explaining the principle of the present invention and also for explaining an embodiment. Each embodiment of the present invention will be described with reference to FIG.

【００１７】図１（ａ）〜（ｄ）に本発明の各項目に該
当する四つの例である。何れも，絶縁膜の上に電極パッ
ドを形成し，Alワイヤをボンディング後，450℃で熱処
理を行っている。FIGS. 1A to 1D show four examples corresponding to each item of the present invention. In both cases, electrode pads are formed on the insulating film, Al wires are bonded, and then heat treatment is performed at 450 ° C.

【００１８】Alワイヤは30μｍ径のものを使用し, ボン
ディング後, ワイヤの引張試験を行って, ワイヤの密着
状況を検査する。一般に, 引張試験でワイヤの切断され
る力はボンディング直後は7.0〜8.0 ｇであるが，組立
後は 5.0〜6.0 ｇに落ち着く。An Al wire having a diameter of 30 μm is used, and after bonding, a tensile test of the wire is performed to inspect the adhesion state of the wire. In general, the wire breaking force in the tensile test is 7.0 to 8.0 g immediately after bonding, but it stabilizes to 5.0 to 6.0 g after assembly.

【００１９】下の表１に示すように，この際，従来例の
電極パッド構造ではテスト資料63例の内, ボンディング
直後で15例, 熱処理後で４例の層間剥離があり, しかも
組立後の４例は全て０ｇの剥離という重度障害不良であ
った。As shown in Table 1 below, in the conventional electrode pad structure, there was delamination in 15 cases immediately after bonding and 4 cases after heat treatment in 63 cases of the test material, and after the assembly, All of the four cases had a severe failure defect of 0 g of peeling.

【００２０】それに対して，本発明の請求項１の例で
は，テスト資料72例中, ボンディング直後, 組立後とも
剥離障害は一切なく, 本発明の効果が大きいことが示さ
れた。また, 本発明の請求項2 〜4 に相当する図１
（ｂ）〜（ｄ）についても，表１にまとめて記載した。On the other hand, in the example of claim 1 of the present invention, in 72 test materials, there was no peeling failure immediately after bonding and after assembly, indicating that the effect of the present invention is great. Further, FIG. 1 corresponding to claims 2 to 4 of the present invention.
Tables (b) to (d) are also summarized in Table 1.

【００２１】多少の不良が出ているが，これは平坦性の
良好な B-PSG膜を必要とする品種に適用される。概略の
評価を表中に示した。Although there are some defects, this is applied to the products that require a B-PSG film having good flatness. A rough evaluation is shown in the table.

【００２２】また, 表１の縦軸は絶縁膜の種類，横軸は
電極パッドの構造である。In Table 1, the vertical axis represents the type of insulating film and the horizontal axis represents the structure of the electrode pad.

【００２３】[0023]

【表１】 [Table 1]

【００２４】[0024]

【発明の効果】以上説明したように, 本発明によれば,
絶縁膜とAl等の配線の密着性を向上することにより，後
工程のワイヤーボンディング時のストレスによる層間剥
離をなくすことが可能となる。As described above, according to the present invention,
By improving the adhesion between the insulating film and the wiring such as Al, it becomes possible to eliminate delamination due to stress during wire bonding in the subsequent process.

【００２５】よって，半導体デバイスの品質ならびに歩
留りの向上に寄与するところが大きい。Therefore, it greatly contributes to the improvement of the quality and yield of semiconductor devices.

【図面の簡単な説明】[Brief description of drawings]

【図１】 本発明の原理説明図FIG. 1 is an explanatory view of the principle of the present invention.

【図２】 従来例の説明図FIG. 2 is an explanatory diagram of a conventional example.

【符号の説明】[Explanation of symbols]

１ SiO2膜,PSG膜 ２ 下層Al, Al合金膜 ３ Ti化合物膜 ４ 上層Al, Al合金膜 ５ AlまたはAuワイヤ ６ B-PSG 膜 ７ Al, Al合金膜, ８ 樹脂膜, ９ B-PSG 膜 10 Ti化合物 11 Al, Al合金膜, 12 AlまたはAuワイヤ1 SiO 2 film, PSG film 2 Lower layer Al, Al alloy film 3 Ti compound film 4 Upper layer Al, Al alloy film 5 Al or Au wire 6 B-PSG film 7 Al, Al alloy film, 8 Resin film, 9 B-PSG Film 10 Ti compound 11 Al, Al alloy film, 12 Al or Au wire

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】 絶縁膜で被覆された半導体基板上のボン
ディングワイヤ接続用電極パッド部分の構造において,
該絶縁膜が二酸化シリコン膜, 或いは燐珪酸ガラス膜か
らなり, かつ, 電極パッドが下層にアルミニウム膜, ま
たはその合金膜, 中間層にチタン化合物膜, 上層にアル
ミニウム膜, またはその合金膜の三層構造からなること
を特徴とする半導体装置の電極パッド構造。1. A structure of an electrode pad portion for bonding wire connection on a semiconductor substrate covered with an insulating film,
The insulating film is made of a silicon dioxide film or a phosphosilicate glass film, and the electrode pad has a lower layer of an aluminum film or its alloy film, an intermediate layer of a titanium compound film, an upper layer of an aluminum film, or its alloy film of three layers. An electrode pad structure for a semiconductor device, which is characterized by comprising a structure. 【請求項２】 絶縁膜で被覆された半導体基板上のボン
ディングワイヤ接続用電極パッド部分の構造において,
該絶縁膜がボロンドープ燐珪酸ガラス膜からなり, か
つ, 電極パッドが下層にアルミニウム膜, またはその合
金膜, 中間層にチタン化合物膜, 上層にアルミニウム
膜, またはその合金膜の三層構造からなることを特徴と
する半導体装置の電極パッド構造。2. A structure of an electrode pad portion for bonding wire connection on a semiconductor substrate covered with an insulating film,
The insulating film is made of boron-doped phosphosilicate glass film, and the electrode pad is made of a three-layer structure of an aluminum film as a lower layer or an alloy film thereof, a titanium compound film as an intermediate layer, an aluminum film as an upper layer, or an alloy film thereof. An electrode pad structure for a semiconductor device, comprising: 【請求項３】 絶縁膜で被覆された半導体基板上のボン
ディングワイヤ接続用電極パッド部分の構造において,
電極パッド周縁が下層にチタン化合物膜, 上層にアルミ
ニウム膜，またはその合金膜の二層構造からなり, か
つ，電極パッド部はアルミニウム膜, またはその合金膜
からなることを特徴とする半導体装置の電極パッド構
造。3. The structure of an electrode pad portion for bonding wire connection on a semiconductor substrate covered with an insulating film,
An electrode of a semiconductor device characterized in that the electrode pad periphery has a two-layer structure of a titanium compound film as a lower layer and an aluminum film or an alloy film as an upper layer, and the electrode pad portion is made of an aluminum film or an alloy film thereof. Pad structure. 【請求項４】 絶縁膜で被覆された半導体基板上のボン
ディングワイヤ接続用電極パッド部分の構造において,
電極パッドが下層ににチタン化合物膜, 上層にアルミニ
ウム膜, またはその合金膜の二層構造からなり，かつ，
ワイヤボンディング後，パッド部のアルミニウムまたは
金ワイヤにポリイミド或いは，シリコーン等の樹脂膜を
被覆することを特徴とする半導体装置の電極パッド構
造。4. A structure of an electrode pad portion for bonding wire connection on a semiconductor substrate covered with an insulating film,
The electrode pad has a two-layer structure of a titanium compound film as the lower layer, an aluminum film as the upper layer, or its alloy film, and
An electrode pad structure for a semiconductor device, characterized in that after wire bonding, the aluminum or gold wire of the pad portion is covered with a resin film such as polyimide or silicone.
JP3155013A 1991-06-27 1991-06-27 Electrode pad structure of semiconductor device Withdrawn JPH056915A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3155013A JPH056915A (en) 1991-06-27 1991-06-27 Electrode pad structure of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3155013A JPH056915A (en) 1991-06-27 1991-06-27 Electrode pad structure of semiconductor device

Publications (1)

Publication Number Publication Date
JPH056915A true JPH056915A (en) 1993-01-14

Family

ID=15596775

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3155013A Withdrawn JPH056915A (en) 1991-06-27 1991-06-27 Electrode pad structure of semiconductor device

Country Status (1)

Country Link
JP (1) JPH056915A (en)

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JPH098134A (en) * 1995-06-22 1997-01-10 Nec Corp Semiconductor device and its manufacture
US6441467B2 (en) 1997-04-24 2002-08-27 Sharp Kabushiki Kaisha Semiconductor device having active element connected to an electrode metal pad via a barrier metal layer and interlayer insulating film
JP2004363173A (en) * 2003-06-02 2004-12-24 Seiko Epson Corp Semiconductor device and method of manufacturing the same
JP2009088381A (en) * 2007-10-02 2009-04-23 Fuji Electric Device Technology Co Ltd Semiconductor device, and method for manufacturing the same
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US9053973B2 (en) 2013-01-07 2015-06-09 Denso Corporation Semiconductor device
JP2016111084A (en) * 2014-12-03 2016-06-20 トヨタ自動車株式会社 Semiconductor device and method of manufacturing the same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH098134A (en) * 1995-06-22 1997-01-10 Nec Corp Semiconductor device and its manufacture
US6441467B2 (en) 1997-04-24 2002-08-27 Sharp Kabushiki Kaisha Semiconductor device having active element connected to an electrode metal pad via a barrier metal layer and interlayer insulating film
US6650002B1 (en) 1997-04-24 2003-11-18 Sharp Kabushiki Kaishi Semiconductor device having active element connected to an electrode metal pad via a barrier metal layer and interlayer insulating film
US6864562B1 (en) 1997-04-24 2005-03-08 Sharp Kabushiki Kaisha Semiconductor device having active element connected to an electrode metal pad via a barrier metal layer and interlayer insulating film
JP2004363173A (en) * 2003-06-02 2004-12-24 Seiko Epson Corp Semiconductor device and method of manufacturing the same
JP2009088381A (en) * 2007-10-02 2009-04-23 Fuji Electric Device Technology Co Ltd Semiconductor device, and method for manufacturing the same
US9053973B2 (en) 2013-01-07 2015-06-09 Denso Corporation Semiconductor device
JP2016111084A (en) * 2014-12-03 2016-06-20 トヨタ自動車株式会社 Semiconductor device and method of manufacturing the same
US9698103B2 (en) 2014-12-03 2017-07-04 Toyota Jidosha Kabushiki Kaisha Semiconductor device and manufacturing method therefor
JP2015092193A (en) * 2015-02-10 2015-05-14 大日本印刷株式会社 Sensor device-manufacturing method, and sensor device

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