TW587321B - Structure of bonding pad region - Google Patents

Abstract

A kind of structure for bonding pad region is revealed in the present invention. The invention is suitable for use on a semiconductor substrate to wire bond and manufacture connection pin on the bonding pad surface. The invention mainly includes the followings: forming a patterned dielectric layer on the semiconductor substrate surface; a top portion metal layer having plural openings; a bonding pad, which is disposed inside the patterned dielectric layer to overlap the top portion metal layer. The top portion metal layer is disposed inside the patterned dielectric layer to make inside of the opening full of the patterned dielectric layer. In addition, the bonding pad surface is exposed outside the patterned dielectric layer.

Description

587321 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a structure of semiconductor integrated circuits (ICs), and in particular, to a structure capable of preventing peeling of a bonding pad. (Peeling) junction ridge structure. [Prior art]

After the fabrication of the integrated circuit is completed, the top metal layer formed on the surface is defined as a plurality of bonding pads, and is electrically connected to the metal pad formed on the bottom layer, respectively, and then passed through a bonder. ) Connected between the guide pad corresponding to the bonding pad and the guide frame by a metal wire. In other words, the bonding pad serves as an interface between the internal circuit and the external signal guide pins, and the external signal is nothing more than a power signal, a ground signal, or an input / output signal, and so on. The conventional metal pad structure is described below with reference to FIGS. 1 and 2. First, please refer to FIG. 1, which is a cross-sectional view showing a conventional metal pad structure. Wherein, reference numeral 108 is a semiconductor substrate on which a plurality of semiconductor elements are formed. Here, in order to simplify the diagram, only a flat substrate is illustrated. A first patterned dielectric layer 202 is formed on the substrate 108 as an inter-metal dielectric (IMD), such as a low dielectric material.

The layer 'and-th-metal rhenium unit 201 has a square or rectangular shape and is formed in the intermetallic dielectric layer 202 as an electrical connection structure for connecting the internal wiring of the semiconductor element and the external wire. After that, a second patterned dielectric layer is formed on the first patterned dielectric layer 202 and the first metal framed unit 201.

587321 Description of the invention (2) 204, a via hole 2 04a is formed in the dielectric layer 204 located above the first metal pad unit 201, and a copper metal plug is provided in the via hole 204a 2 04b, for electrically connecting the first metal pad unit 201. As a result, a third patterned dielectric layer 206 and a second metal rigid cell 205 are formed on the second patterned dielectric layer 204. The shape of the metal pad unit 205 is also square or rectangular, and is used to electrically connect with the semiconductor element on the substrate 108 through the plug 204b and the first metal pad unit 201 and as a bonding pad for connecting external circuits ( bonding pad). Finally, a passivation protection layer 208 is formed above the periphery of the second metal pad unit 205 to protect the pad 205 from being damaged in the subsequent package process. The protective layer 208 has an opening 208a, and the surface of the metal layer 205 is exposed to serve as a part of the metal wire bonding of the post-wire machine. However, please refer to FIG. 2, which shows a top view of the first patterned dielectric layer 202 and the first metal pad unit 2 01 according to FIG. 1. As described above, since the first patterned dielectric layer 202 has weak mechanical strength and poor bondability, it is easy to apply the chemical mechanical polishing (CMP) stress on the first metal pad unit 2 01 Stress concentration occurs in the corners and cracks occur in the dielectric layer 202, which seriously affects the electrical characteristics of the device and the quality of the product. In addition, after the dual effects of mechanical stress and ultrasonic oscillation applied by the wire bonder, the first " electrical layer 202 may crack and peel, as shown in Fig. 2. More seriously, the entire top metal layer 205 and the metal layer 201 will be lifted up by the wire of the wire bonder and peel away from the dielectric layer (not shown) to form a crater, causing the semiconductor device to fail.

0503-8562TW (Nl); TSMC200M3i6; Pel icia.ptd% '---- 587321 V. Description of the invention (3) The first U.S. patent issued on January 6th to prevent peeling and bonding of the bonding pad area The production area of the surrounding junction area is increased to increase the density and the structure of the semiconductor device is reduced in size. The main purpose of the present invention is to increase the release of external stress and prevent the peeling of the bonding pad. The structures disclosed by Lin et al. In No. 6,306,749B1 and No. 16,313,541B1 of 2001, announced on the 23rd, are mainly used to increase the adhesion of the joint. However, as the semiconductor volume shrinks, Under the trend, these complexities are facing great difficulties. In view of this, in order to solve the above problem, a structure of a bonding pad area is provided, which can not only ensure the adhesion of the bonding pad area, but also the purpose of pitting. SUMMARY OF THE INVENTION The object of the present invention is to provide a peeling and sinking of a pad. The feature of the present invention is mainly the use of (s 1 0t). The opening is viewed from the top view, and the opening can also be included in the top state. The opening is filled with a dielectric layer inside, which can increase the adhesion. 'And strengthen the entire interlock capability. In order to achieve the above purpose, the present structure 'mainly includes a structure formed in the above-mentioned half of the bonding pad area, preventing an additional opening in the top metal layer, which can be connected to the outside of the top metal layer, inside the metal layer, or both It is used to release the external stress, and the interlocking of the dielectric layer between the bonding pad area and the dielectric layer can provide a patterned interface for the surface of a non-conductor conductor that joins the ridge area. 0503-8562TWF (Nl); TSMC200M316; Felicia.ptd Fifth, description of the invention (4) A metal layer of the U electrical part and a bonding pad provided on the above pattern item Qiu Lingli® where the top σ 卩 metal layer overlaps. Among them, the ◎ ρ metal layer is disposed in the patterned dielectric layer, so that the surfaces of the above-mentioned two and the above-mentioned graphs are filled with the dielectric Γ two-junction 塾 exposed in the above-mentioned figure A. According to the present invention, the opening Viewed from the top view, it can communicate with the outside of the TS layer, or the entire opening can be included in the top shape = 3 'or both types of openings can exist at the same time. The daggers of the above openings: rectangular, triangular, irregular shapes, arbitrary patterns, or any other. Said openings are arranged at the four corners of the top metal layer, and the structure of the bonding region of the present invention further includes: a protection surface of the patterned dielectric layer above the bonding pad. J t describes the surface of the metal pad as the bonding part; and multiple gold: layer two: do not set under the top metal layer in the patterned dielectric layer above, where each metal layer is connected by a plurality of metal plugs . It is stated that the patterned dielectric layer may be made of a low dielectric material. The material of the two A metal layers may include copper (Cu), aluminum (A1), or copper and aluminum (d) alloy). In addition, the material of the bonding pad may include aluminum, and the top metal layer and the bonding pad may be rectangular. The above-mentioned purposes, features, and advantages can be more clearly understood below: Wen Teju-the preferred embodiment ’and the accompanying drawings, for a detailed description such as Γ · See page 7

587321

[Embodiment] The top view of the top metal layer of Fig. 3 and Fig. 4 and Fig. 6 is described below using a knot of the silver mouth pad region in Fig. 3, and a preferred embodiment. First, please refer to FIG. 3 to explain the bonding pad structure of the present invention. The structure mainly includes: a pattern formed on the surface of the semiconductor substrate 100; a dielectric layer 115; a top metal layer 140 having a plurality of openings; and: within the patterned dielectric layer 115 and the top metal layer 14. Weighing 1 150. Establish a mouth! The figure shows a semiconductor substrate 100. The surface of the semiconductor substrate 100 may have any desired semiconductor components, such as transistors, diodes, and any conventional semiconductor components. For simplicity, it is not shown here. In addition, the plurality of patterned dielectric layers are, for example, a first patterned dielectric layer 111, a second patterned dielectric layer 112, a third patterned dielectric layer 113, and a fourth patterned dielectric layer 114. A fifth patterned dielectric layer 115 ′ is sequentially stacked on the semiconductor substrate 100. The material of each of the patterned dielectric layers 111 to 115 is, for example, silicon oxide (SiO 2), silicate glass (pSG), borosilicate glass (BPSG), or other low dielectric constant materials, such as fluorosilicon glass ( FSG). In addition, a plurality of metal layers, for example, the first metal layer 3, the second metal layer 132, the second metal layer 133, and the fourth metal layer 134 are disposed on the first to fourth patterned dielectric layers 134 and 134, respectively. internal. The figure shows four metal layers 1 3 1 ~ 1 3 4 ’However, the number of metal layers can actually be matched with the circuit design.

0503-8562TW (Nl): TSMC2001-1316; Felicia.ptd Page 8 587321 V. Description of the invention (6) Adjustments can be made according to requirements, and no restrictions are set here. As for the number of the patterned dielectric layers, it is necessary to match the number of metal layers so that each metal layer is disposed inside each patterned dielectric layer. In addition, the top metal layer 140 refers to the topmost metal layer, which is disposed inside the topmost (fifth) patterned dielectric layer 5. The feature of the present invention is that the top metal layer 140 has a plurality of openings, and the inside of the openings must be filled with the patterned dielectric layer 115. Since external stresses are easily concentrated in the corners, the openings are generally disposed at the four corners of the top metal layer 14 0, which can effectively eliminate and release external stresses, and the openings are filled with a patterned dielectric layer 115, which can make the entire bonding pad The adhesion of the region to the patterned dielectric layer is increased. In this way, the bonding pad region can be effectively prevented from being peeled off due to the stress caused by wire bonding. The openings inside the top metal layer 1 40 cannot be observed from the cross-sectional view. The following views will explain the openings inside the top metal layer 1 40 in detail in the following text. The material of each of the metal layers 13 and 134 and the top metal layer 14 may include copper (Cu), Shao (A1), or Cu / A1 alloy. In addition, a plurality of metal plugs are provided between each of the metal layers 134 and 134 and the top metal layer 14o as an electrical connection. The material of the metal plug 10 is, for example, metal tungsten (w). In addition, a 'bonding pad' (15) overlaps the surface of the top metal layer, and is also provided inside the patterned dielectric layer 115, and its surface is exposed to the outside for the subsequent production of pins by wire bonding and the use of blood. Electrical connection. The material of the bonding pad 150 is, for example, metal aluminum (A1). Finally, a protective layer 120 is disposed on the surface of the patterned dielectric layer 115 above the periphery of the bonding pad 150. In addition, the protective layer 12 has a joint opening.

587321 V. Description of the invention (7) Zone I is used to expose the surface of the bonding pad 150 to facilitate the bonding of the bonding pad 150. The shapes of each of the metal layers 131 to 134, the top metal layer 140, and the bonding pad 150 are generally rectangular, and other shapes can be made according to requirements, which are not limited here. The present invention is characterized in that the opening 200 of the top metal layer 150 is shown in FIGS. 4A to 4F. The opening 200a may be entirely contained inside the top metal layer 150. In addition, please refer to FIGS. 5A to 5E. The opening 20Ob can also communicate with the top metal layer 150 externally, or both types of openings 200a, 200b exist at the same time (as shown in FIGS. 6A to 6C). The shapes of the openings 20 0a, 200b may include: arc, straight, band-shaped, ruler-shaped, diamond-shaped, rectangular, polygonal (from three sides to eight sides, or even more sides, for example: rectangle, triangle, pentagon, Hexagon, octagon, etc.), irregular shapes, arbitrary patterns or arbitrary text (for example: C, e, Η, I, J, KK, L, M, N, 0, U, V, W, X, etc. ), Which is not limited here, and is generally arranged at the four corners of the top metal layer 50. Effect of the invention According to the present invention, 'the opening is designed in the top metal layer to release external stress, and the opening is filled with a patterned dielectric layer, which can make the entire bonding pad area adhere to the patterned dielectric layer (adhesi 〇n) increase, strengthen the interlocking ability of the entire joint ridge structure (interlocck capabi 1 1 ty), to avoid the mechanical stress and ultrasonic vibration applied by the wire bonding machine during wire bonding, which will cause the metal pad to peel and pit. Issue

0503-8562TWF (Nl): TSMC2001-1316; Felicia.ptd Page 10 587321 V. Description of the invention (8). Although the present invention is disclosed as above with a preferred embodiment, it is not intended to limit the scope of the present invention. Any person skilled in the art can make some changes and decorations without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.

0503-8562TWF (Nl); TSMC200M316; Felicia.ptd page 11

Claims (1)

Charm 91 mi 7i 6. The scope of the patent application is to apply the structure of a 1-wire junction area 'suitable to a semiconductor substrate, using T „mwire bond) on the surface of the bonding pad, including: a dielectric layer, formed on the semiconductor Substrate surface; Dielectric; 2 in 7! Number of openings D, and the patterned dielectric layer provided in the patterned opening above is filled with the patterned dielectric layer; and the metal acoustic meeting: the second pattern is not placed in the patterned Inside the dielectric layer and above the top, "Yi", the surface is exposed outside the patterned dielectric layer. Zhong Bu :, t states that the structure of the bonding pad area described in item 1 of the patent scope is rectangular, triangular, irregular shape or arbitrary text. The third is the opening of the structure of the bonding pad area described in item 丨 of the scope of the patent application, and the bodies are arranged at the four corners of the top metal layer. Φ The structure of the bonding pad area described in item 1 of the scope of the patent application for printing, its parent: a protective layer, 'the figure placed above the surroundings of the bonding pad is divided into Y layers, and only the surface of the bonding pad is exposed, 5. As the bonding, the structure of the bonding pad region described in item 1 of the scope of patent application, which includes: a plurality of metal layers, which are respectively disposed below the γ4 metal layer in the patterned dielectric layer, and each of the metal layers A plurality of metal plugs are used to transport the structure of the bonding pad area as described in item 1 of the scope of the patent application, wherein the patterned dielectric layer is made of a low-dielectric material. 7. The structure of the bonding pad area as described in item 1 of the patent application scope, wherein the material of the top metal layer includes copper (Cu), aluminum (Α1), or copper aluminum alloy 587321 Μ Amendment No. 91134171 Sixth, order patent scope (Cu / Al alloy). The structure of the bonding pad area described in item 1 of the upper and middle patent range, wherein the material of the upper and lower bonding pads includes aluminum (A1). The structure of the junction region described in item 1 of the upper middle range and the upper range of the profit range, wherein the top metal layer is rectangular. The structure of the bonding pad area as described in item 1 of the patent scope, the above-mentioned bonding system is rectangular. Used to: Produce a structure of a bonding pad area, suitable for-semiconductor substrates, wire bonding to make a wire bond on the surface of the above bonding pad, including two pictures, a dielectric layer, and forming on the surface of the above semiconductor substrate; Ray® top " metal layer, has a plurality of openings, and is provided in the above patterned '2, s2 ?, so that the above openings are filled with the above patterned dielectric layer, wherein the entire opening from the view is included in the top The inside of the metal layer; and “I” is disposed in the patterned dielectric layer and is heavy with the top λ, and its surface is exposed outside the patterned dielectric layer. Basin 12. The structure of the bonding pad area as described in item 11 of the scope of the patent application, the shape of the opening 2 is rectangular, triangular, irregular, arbitrary pattern or arbitrary text. · Basin 13 · According to the structure of the bonding pad area described in item 11 of the scope of the patent application, the eight openings are generally arranged at the four corners of the top metal layer. Basin 14. The structure of the bonding pad area as described in item 11 of the scope of the patent application, /, and more:-a protective layer, which is provided above the periphery of the above-mentioned bonding pad, page 15 0503-8562TWFl (Nl) .ptc 587321 The surface of the patterned dielectric layer was modified so that only the surface of the bonding pad was exposed as a bonding portion. 15. The structure of the bonding pad area as described in item Π of the scope of the patent application, which further includes: a plurality of metal layers respectively disposed below the top metal layer in the patterned dielectric layer, wherein each metal layer is formed by A plurality of metal plugs are connected. 16. The structure of the bonding pad area according to item 11 of the scope of the patent application, wherein the patterned dielectric layer is made of a low dielectric material. 17. The structure of the bonding pad area as described in item 11 of the scope of patent application, wherein the material of the top metal layer includes copper (Cu), aluminum (A1), or copper / aluminum alloy (Cu / Al alloy) 〇 18. The structure of the bonding pad area described in item 丨 丨 of the patent scope, wherein the material of the bonding pad includes aluminum (A1). 19. The structure of the bonding pad area according to item n of the patent application scope, wherein the top metal layer is rectangular. 2 0. The structure of the bonding pad area described in item 1 of the declared patent scope, wherein the bonding pad is rectangular. 21 · Structure of a bonding pad area, suitable for a semiconductor substrate, used for making wires (wire bonds) on the surface of the bonding pad, and a patterned dielectric layer is formed on the surface of the semiconductor substrate.-Top metal Layer, having a plurality of openings, and provided in the electrical layer, so that the openings are filled with the patterned dielectric layer, and the opening is in communication with the exterior of the top metal layer. 0503-8562TWFl (Nl) .ptc Page 16 587321 And a bonding 塾 'is disposed in the patterned dielectric layer and overlaps the top metal layer', and its surface is exposed outside the patterned dielectric layer. 22. The structure of the bonding pad area according to item 21 of the scope of the patent application, wherein the shape of the opening is rectangular, triangular, irregular, arbitrary pattern, or arbitrary text. 23. The structure of the bonding pad area according to item 21 of the scope of the patent application, wherein the openings are generally disposed at four corners of the top metal layer. 24. According to the structure of the bonding pad area described in item 21 of the scope of the patent application, the eighth high school includes a protective layer, which is disposed on the surface of the patterned dielectric layer above and around the bonding pad, and only exposes the surface of the bonding pad As a part of the joint. σ 25 · The structure of the bonding pad area as described in item 21 of the scope of the patent application, which further includes: a plurality of metal layers respectively disposed below the top metal layer in the patterned dielectric layer, wherein A plurality of metal plugs are connected. 26. The structure of the bonding pad area according to item 21 of the scope of the patent application, wherein the patterned dielectric layer is made of a low dielectric material. 27. The structure of the bonding pad area according to item 21 of the scope of the patent application, wherein the material of the top metal layer includes copper (Cu), aluminum (A0, or copper / aluminum alloy). The structure of the bonding pad area described in item 21 of the patent scope, wherein the material of the above-mentioned bonding pad includes aluminum (A1). 2 9 · The structure of the bonding pad area described in item 21 of the patent application scope, 0503-8562TWFl (Nl) .ptc Page 17 587321 The top metal layer is rectangular. 3 〇 The structure of the bonding pad area as described in item 21 of Shenyan's patent scope, wherein the above bonding pad is rectangular. 31. A structure of a bonding pad region is suitable for a semiconductor substrate, and is used to wire-make a Wi re bond on the surface of the bonding pad, including: a patterned dielectric layer formed on the surface of the semiconductor substrate; The top metal layer has a plurality of openings, and is disposed in the above; 1 the electrical layer, so that the opening is filled with the patterned dielectric layer, as shown in the top view, some of the openings are external to the top metal layer, and And a part of the opening is entirely included in the top metal layer mesh and the sun bucket; a bonding pad is provided in the patterned dielectric layer and overlaps the metal layer, and its surface is exposed on the patterned dielectric layer outer. The page 3 is described. 2. The adhesion of the bonding pad area as described in item 31 of the scope of patent application, wherein the shape of the opening is rectangular, triangular, or. Structure, Italian pattern or arbitrary text. Brother J shape, living 3 3. The padding area as described in item 31 of the scope of the patent application, wherein the openings are generally arranged at the four corners of the top metal layer, and the structure is 34. The ^^ of the bonding pad area described in item 31 further includes: a protective layer disposed around the bonding pad. The surface of the dielectric layer is patterned to expose only the upper part of the bonding pad surface. The text is a joint 3 5 · As described in the scope of patent application No. 31 of the bonding pad area 'home structure, 0503-8562TWFl (Nl) .ptc Page 18 587321 : The middle includes: a plurality of metals I, which are respectively arranged under the top metal layer inside, and the metal electrical layers in the middle are connected. j m plural metal plugs 36. The connection described in item 31 of the scope of patent application, wherein the above-mentioned patterned dielectric layer is made of a low-dielectric material. ,,,. 37. The structure of the bonding pad area described in item 31 of the scope of the patent application, wherein the material of the top metal layer includes copper (Cu), aluminum (A1), and gold (Cu / Al alloy). " 3 8. The structure of the bonding pad area described in item 31 of the scope of patent application, wherein the material of the bonding pad includes aluminum (A1). 39. The structure of the bonding pad area according to item 31 of the scope of patent application, wherein the top metal layer is rectangular. 40. The structure of the bonding pad area according to item 31 of the scope of the patent application, wherein the bonding pad is rectangular. 0503-8562TWFl (Nl) .ptc Page 19 587321 Schematic Correction Sheet No. 91134171 Revised Date: 93.3.24 208a Figure 2