JPH0566962U - Semiconductor device - Google Patents

Abstract

(57) [Summary] [Object] The present invention improves the yield by applying a photoresist film so as to have a uniform film thickness when applying a photoresist or the like to the surface of a semiconductor substrate. It is an object of the present invention to provide a semiconductor device. [Structure] A semiconductor device 10 configured by forming a conductive pattern or the like on the surface of a substrate 11 by applying a photoresist 12 or the like on the surface of the substrate 11 while rotating the substrate 11 in a photoetching process or the like. In, the semiconductor device 10 is configured such that the substrate 11 is chamfered on the upper side of each edge.

Description

[Detailed description of the device]

[0001]

[Industrial applications]

 The present invention relates to a semiconductor device, and more particularly to a semiconductor device in which a photoresist or the like is applied to the surface of a substrate by a spin method such as a spin coater in an etching process or the like.

[0002]

[Prior Art]

 Conventionally, when a semiconductor device is manufactured, when photoetching is performed to form a conductive pattern or the like on the surface of a substrate that constitutes the semiconductor device, a photoresist is first applied to the surface of the substrate.

The photoresist is applied, for example, as shown in FIG. That is, in FIG. 2, a substrate 2 which constitutes a semiconductor device is placed on the head upper surface 1a of a spin coater 1 which is driven to rotate about a central axis O extending in the vertical direction, and the spin coater 1 is rotated. While rotating around O, the photoresist 3 or the like is applied onto the substrate 2.

[0004]

[Problems to be solved by the device]

 However, according to the application of such a photoresist or the like, the substrate 2 is larger than the head upper surface 1a of the spin coater 1, and the substrate 2 to which the photoresist or the like 3 is to be applied is the spin coater 1 Since the substrate 2 is driven to rotate, the photoresist 3 and the like are subjected to centrifugal force as the substrate 2 rotates, and the surface tension of the substrate 2 and contact with ambient ambient air cause the substrate 2 to rotate. The thickness of the photoresist film 3 formed at the end portion and the peripheral portion becomes large, and a photoresist film having a uniform thickness cannot be obtained (see FIG. 3). As a result, the pattern image that should be formed by the subsequent exposure and development steps becomes non-uniform, and the yield of the device decreases.

In view of the above points, the present invention improves the yield by applying a photoresist film so as to have a uniform film thickness when applying a photoresist or the like on the surface of a substrate. , A semiconductor device is provided.

[0006]

[Means for Solving the Problems]

 In the semiconductor device constituted by forming a conductive pattern or the like on the surface of the substrate by applying a photoresist or the like on the surface of the substrate while rotating the substrate in the photoetching process or the like, A semiconductor device, characterized in that the substrate is chamfered above each edge thereof.

[0007]

[Action]

 According to the above configuration, since each edge of the substrate is chamfered on the upper side thereof, while the substrate is placed on the upper surface of a spin coater or the like and is rotationally driven, a photoresist or the like is applied to the surface of the substrate. When applying, even if the photoresist applied to the surface of the substrate flows toward the outer side in the radial direction from the rotation axis due to centrifugal force or the like, each edge of the substrate is chamfered, Since the photoresist and the like can easily flow to the side surface of the substrate beyond the corners of each edge of the substrate, the photoresist is accumulated near the edges and the peripheral portion of the substrate surface, The film thickness does not become thicker than other parts, and a photoresist film with an almost uniform film thickness can be obtained as a whole, and the pattern image by subsequent exposure and development is uniform. To From Rukoto, so that the yield of the semiconductor device can be made to improve.

[0008]

【Example】

 Hereinafter, the present invention will be described in detail with reference to the embodiments shown in the drawings. FIG. 1 shows an embodiment of a semiconductor device according to the present invention, in which a semiconductor device 10 includes a substrate 11. The substrate 11 has substantially the same structure as the substrate 2 in the conventional semiconductor device shown in FIG. 3, but the upper side of each edge of the substrate 11 is diagonally cut as shown in the figure. Is chamfered.

The semiconductor device 10 according to the present invention is configured as described above, and when, for example, photoresist is applied to the surface of the substrate 11 that constitutes the semiconductor device, the substrate 11 is placed on the upper surface of the head of a spin coater (not shown). A photoresist 12 is applied to the surface of the substrate 11 while being placed and rotated. As a result, the photoresist 12 is applied to the surface of the substrate 11.

At this time, the photoresist 12 applied to the surface of the substrate 11 is subjected to centrifugal force or the like toward the outer side in the radial direction from the rotation axis, near the edge and the peripheral portion of the surface of the substrate 11. Even if it flows to the substrate 11, since the edges of the substrate 11 are chamfered, the photoresist 12 easily crosses over the corners 11a of the edges of the substrate 11 and the side surface of the substrate 11. Can flow to.

Therefore, the film thickness of the photoresist 11 does not become thicker than the other parts due to the accumulation of the photoresist 11 in the vicinity of the end portion and the peripheral portion of the surface of the substrate 11.

The chamfering angle θ of the substrate 11 is preferably about 45 degrees or less so that the photoresist 12 can easily flow from the surface of the substrate 11 to the side surface over the corner 11 a. The chamfer width w is preferably about 300 μm or more on the surface of the substrate 11 in order to facilitate the outflow of the photoresist 12 from the surface of the substrate 11 to the side surface.

[0013]

[Effect of the device]

 As described above, according to the present invention, when the photoresist or the like is applied to the surface of the substrate, the photoresist film is applied so as to have a uniform film thickness, thereby improving the yield. Thus, an extremely excellent semiconductor device can be provided.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a substrate that constitutes an embodiment of a semiconductor device according to the present invention.

FIG. 2 is a schematic view showing a photoresist coating process of a substrate in a conventional semiconductor device.

FIG. 3 is a sectional view of a substrate in an example of a conventional semiconductor device.

[Explanation of symbols]

 10 semiconductor device 11 substrate 12 photoresist

Claims (1)

[Scope of utility model registration request] 1. A semiconductor device configured by forming a conductive pattern or the like on a surface of a substrate by applying a photoresist or the like on the surface of the substrate while rotating the substrate in a photoetching step or the like, A semiconductor device, wherein the substrate is chamfered on the upper side of each edge thereof.