JPH0566352B2 - - Google Patents
Info
- Publication number
- JPH0566352B2 JPH0566352B2 JP60146791A JP14679185A JPH0566352B2 JP H0566352 B2 JPH0566352 B2 JP H0566352B2 JP 60146791 A JP60146791 A JP 60146791A JP 14679185 A JP14679185 A JP 14679185A JP H0566352 B2 JPH0566352 B2 JP H0566352B2
- Authority
- JP
- Japan
- Prior art keywords
- solution
- growth
- temperature
- distribution
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14679185A JPS627697A (ja) | 1985-07-05 | 1985-07-05 | 液相エピタキシヤル成長法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14679185A JPS627697A (ja) | 1985-07-05 | 1985-07-05 | 液相エピタキシヤル成長法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS627697A JPS627697A (ja) | 1987-01-14 |
| JPH0566352B2 true JPH0566352B2 (enrdf_load_stackoverflow) | 1993-09-21 |
Family
ID=15415616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14679185A Granted JPS627697A (ja) | 1985-07-05 | 1985-07-05 | 液相エピタキシヤル成長法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS627697A (enrdf_load_stackoverflow) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS589794B2 (ja) * | 1979-05-16 | 1983-02-22 | 富士通株式会社 | 半導体の液相多層薄膜成長法および成長装置 |
-
1985
- 1985-07-05 JP JP14679185A patent/JPS627697A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS627697A (ja) | 1987-01-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4088514A (en) | Method for epitaxial growth of thin semiconductor layer from solution | |
| JPH0566352B2 (enrdf_load_stackoverflow) | ||
| US4052252A (en) | Liquid phase epitaxial growth with interfacial temperature difference | |
| US5223079A (en) | Forming thin liquid phase epitaxial layers | |
| JPS58120600A (ja) | 3―v族化合物半導体のエピタキシカル成長方法 | |
| US4179317A (en) | Method for producing compound semiconductor crystals | |
| JPS589794B2 (ja) | 半導体の液相多層薄膜成長法および成長装置 | |
| JP3210840B2 (ja) | 半導体液相エピタキシャル装置 | |
| JPS626338B2 (enrdf_load_stackoverflow) | ||
| JPH0566353B2 (enrdf_load_stackoverflow) | ||
| van Oirschot et al. | LPE growth of DH laser structures with the double source method | |
| JP3151277B2 (ja) | 液相エピタキシャル成長法 | |
| JPS6311596A (ja) | 多元化合物半導体の二相融液法による液相エピタキシヤル成長法 | |
| JPH0519516B2 (enrdf_load_stackoverflow) | ||
| JPH01115892A (ja) | 液相成長装置 | |
| JPH025530Y2 (enrdf_load_stackoverflow) | ||
| JPH0330980B2 (enrdf_load_stackoverflow) | ||
| JPS60149124A (ja) | 液相エピタキシヤル成長の方法 | |
| JPH06177063A (ja) | 半導体製造装置および半導体製造方法 | |
| JPH0538063Y2 (enrdf_load_stackoverflow) | ||
| JPH0214894A (ja) | 液相エピタキシャル成長方法 | |
| JPS60145608A (ja) | 液相エピタキシヤル成長方法 | |
| CS203426B1 (cs) | Způsob přípravy několika monokrystalických epitaxních vrstev | |
| JPH01153592A (ja) | エピタキシャル成長用ボート | |
| JPS5673700A (en) | Liquid phase epitaxially growing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |