JPH0563950B2 - - Google Patents

Info

Publication number
JPH0563950B2
JPH0563950B2 JP58034407A JP3440783A JPH0563950B2 JP H0563950 B2 JPH0563950 B2 JP H0563950B2 JP 58034407 A JP58034407 A JP 58034407A JP 3440783 A JP3440783 A JP 3440783A JP H0563950 B2 JPH0563950 B2 JP H0563950B2
Authority
JP
Japan
Prior art keywords
type
amorphous silicon
disilane
glow discharge
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58034407A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59161079A (ja
Inventor
Nobuhiro Fukuda
Kenji Myaji
Yoji Kawahara
Hidemi Takenochi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Toatsu Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Priority to JP58034407A priority Critical patent/JPS59161079A/ja
Publication of JPS59161079A publication Critical patent/JPS59161079A/ja
Publication of JPH0563950B2 publication Critical patent/JPH0563950B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP58034407A 1983-03-04 1983-03-04 光電変換素子の製造法 Granted JPS59161079A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58034407A JPS59161079A (ja) 1983-03-04 1983-03-04 光電変換素子の製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58034407A JPS59161079A (ja) 1983-03-04 1983-03-04 光電変換素子の製造法

Publications (2)

Publication Number Publication Date
JPS59161079A JPS59161079A (ja) 1984-09-11
JPH0563950B2 true JPH0563950B2 (enrdf_load_stackoverflow) 1993-09-13

Family

ID=12413331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58034407A Granted JPS59161079A (ja) 1983-03-04 1983-03-04 光電変換素子の製造法

Country Status (1)

Country Link
JP (1) JPS59161079A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0746731B2 (ja) * 1984-07-25 1995-05-17 工業技術院長 非晶質太陽電池の製法

Also Published As

Publication number Publication date
JPS59161079A (ja) 1984-09-11

Similar Documents

Publication Publication Date Title
CA1332343C (en) Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
US5151255A (en) Method for forming window material for solar cells and method for producing amorphous silicon solar cell
Kim et al. Use of a carbon‐alloyed graded‐band‐gap layer at the p/i interface to improve the photocharacteristics of amorphous silicon alloyed p‐i‐n solar cells prepared by photochemical vapor deposition
US4749588A (en) Process for producing hydrogenated amorphous silicon thin film and a solar cell
JP2003188400A (ja) 結晶性ＳｉＣ膜の製造方法、結晶性ＳｉＣ膜及び太陽電池
JPH0563950B2 (enrdf_load_stackoverflow)
JPH07130661A (ja) 非晶質酸化シリコン薄膜の生成方法
JPH0719906B2 (ja) 半導体装置の製造方法
JPH0918038A (ja) 光電変換素子
JPH0563951B2 (enrdf_load_stackoverflow)
JPH0519833B2 (enrdf_load_stackoverflow)
JPH0552673B2 (enrdf_load_stackoverflow)
JPH0612835B2 (ja) 光電変換素子の製法
JPH1187751A (ja) 多結晶シリコン薄膜及び光電変換素子並びにこれらの製造方法
JPH07183550A (ja) 非晶質光電変換素子
JPH06260665A (ja) 非晶質太陽電池
EP0137043B1 (en) Method of manufacturing hydrogenated amorphous silicon thin film and solar cell
JP4652498B2 (ja) 非晶質シリコン系薄膜光電変換装置の製造方法
JPH0642450B2 (ja) 半導体薄膜の形成方法
JP2728874B2 (ja) 半導体装置の製法
JPS63220578A (ja) 光電変換素子の製造方法
JPH0584051B2 (enrdf_load_stackoverflow)
JP2000232073A (ja) 多結晶シリコン膜
JPH0644552B2 (ja) 非晶質薄膜の製法
JPH0669029B2 (ja) Ｐ型半導体薄膜の形成方法