JPH0562907A - Semiconductor manufacturing device - Google Patents

Abstract

PURPOSE:To provide a semiconductor manufacturing device in which non- uniformity of temperature is hardly generated on the back side of a substrate by making uniform the quantity of irradiation of light projected on the back side of the substrate, and a film of uniform quality can be grown. CONSTITUTION:A plurality of ring-shaped infrared-ray lamps 1a to 1d, having different diameter, are concentrically arranged almost in parallel with each other, also they are arranged in such a manner that they are opposing to the receptacle stand 6 on which a substrate 4 is placed through the quartz window of a chamber 2, and a radiation thermometer 7 is arranged opposing to the receptacle stand 6 through the aperture part 8 of the infrared-ray lamp 1a, located in the center part, among the plurality of lamps 1a to 1d.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus having an infrared lamp, and more particularly, it makes it possible to make the irradiation amount of the lamp on the back surface of the substrate substantially uniform and to prevent temperature unevenness on the back surface of the substrate. The present invention relates to a semiconductor manufacturing device. recent years,
Uniform lamp irradiation is required to uniformly heat the substrate, and it is desirable that the substrate temperature during the irradiation is measured by a radiation thermometer. However, there are many cases where it is not possible to set the peephole of the radiation thermometer at the optimum position because of the restriction of the chamber shape.

For example, in a CVD apparatus having an infrared lamp, when a thin film is deposited on the surface of a substrate, if the infrared lamp is irradiated from the surface of the substrate, light interference occurs due to a change in the film thickness in the process of depositing the thin film. Since the infrared reflectance changes from moment to moment due to the effect, it has a drawback that it is different from the desired substrate temperature and it is difficult to achieve good growth. Also, when measuring the temperature of the substrate with a radiation thermometer, if the measurement is performed on the surface of the substrate, the emissivity changes from moment to moment, which makes it difficult to perform good temperature measurement.

Therefore, it is desirable that the irradiation with the infrared lamp and the temperature measurement with the radiation thermometer be performed from the back surface of the substrate that is not affected by the above.

[0004]

2. Description of the Related Art FIGS. 2 (a) and 2 (b) are schematic views showing a configuration of a conventional semiconductor manufacturing apparatus, and FIG. 2 (a) is a schematic plan view of a lamp section seen from above, ) Is a schematic cross-sectional view of a manufacturing apparatus. In FIG. 2, 31 is a straight tube type infrared lamp, and this straight tube type infrared lamp 31 is arranged above a quartz window 33 provided in the upper part of the chamber 32. 34 is a support member made of quartz or the like.
36 is placed so as to face the straight tube type infrared lamp 31 through the quartz window 33. Reference numeral 37 is a radiation thermometer for measuring the temperature from the back surface of the substrate 36 arranged above the straight tube type infrared lamp 31.

In this conventional semiconductor manufacturing apparatus, a straight tube type infrared lamp 31 is arranged above the chamber 32 on the back side of the substrate 36 so that the lamp can be irradiated from the back side of the substrate 36.
Aperture A with a part of the straight tube type infrared lamp 31 on the back side of the board 36 removed so that the temperature of the board 36 can be measured from the back side of the board 36
Since the radiation thermometer 37 is arranged above the section,
There is an advantage that it can be prevented from being affected by the light interference effect that accompanies a change in film thickness during CVD.

[0006]

However, in the above-described conventional semiconductor manufacturing apparatus, in order to measure the temperature of the substrate 36 by the radiation thermometer 37, a part of the straight tube type infrared lamp 31 is removed and the peephole is opened. The area A was provided, and the area A was extremely larger than the effective area required for measuring the temperature of the substrate 36. Therefore, the straight tube type infrared lamp 31
The temperature unevenness on the back surface of the substrate 36 immediately below the part where the peep opening A and the straight tube type infrared lamp 31 cannot be placed (the part of the straight tube type infrared lamp 31 has a high temperature Has a problem in that the film quality becomes non-uniform and good growth is difficult to achieve.

Therefore, according to the present invention, it is possible to make the irradiation amount of lamp irradiation on the back surface of the substrate substantially uniform so that temperature unevenness on the back surface of the substrate is less likely to occur, and to make the film quality uniform and to perform good growth. The purpose is to provide a manufacturing apparatus.

[0008]

In order to achieve the above object, a semiconductor manufacturing apparatus according to the present invention has a plurality of ring-shaped infrared lamps having different diameters arranged concentrically and substantially in parallel with each other, and a quartz window of a chamber is provided. The radiation thermometer is arranged so as to face the mounting table on which the substrate is mounted, and the radiation thermometer is disposed so as to face the mounting table through the opening of the infrared lamp at the center of the plurality of infrared lamps. It has been done.

In the present invention, the apparatus is a CVD (Ch
emichal Vavor deposition) It may be configured to be an apparatus.

[0010]

In the present invention, as shown in FIG. 1 which will be described in detail in the embodiment, among the four infrared lamps 1a to 1d, the area of the opening 8 of the infrared lamp 1a at the central portion is necessary for measuring the temperature of the substrate 4. Substrate 4 has the same structure as the effective viewing area.
The irradiation amount of the lamp irradiated on the back surface can be made substantially uniform, and the uneven temperature on the back surface of the substrate 4 can be made less likely to occur.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. 1A and 1B are schematic diagrams showing a configuration of a semiconductor manufacturing apparatus according to an embodiment of the present invention. FIG. 1A is a schematic plan view of a lamp section seen from above, and FIG. It is a cross-sectional schematic diagram. In FIG. 1, reference numerals 1a, 1b, 1c and 1d denote ring-shaped infrared lamps having different diameters. The infrared lamps 1a to 1d are arranged concentrically and substantially in parallel with each other, and a quartz window 3 of a chamber 2 is provided. It is arranged so as to face the support member 6 made of quartz or the like on which the substrate 4 is mounted, and the back side of the substrate 4 is irradiated.
Reference numeral 7 denotes a radiation thermometer for measuring the temperature of the substrate 4. The radiation thermometer 7 has an opening 8 of the infrared lamp 1a at the center which serves as a peephole of the radiation thermometer 7 among the four infrared lamps 1a to 1d. It is arranged so as to face the support member 6 through and the temperature of the back side of the substrate 4 is measured. Further, of the four infrared lamps 1a to 1d, the area of the opening 8 of the infrared lamp 1a at the center is made substantially the same as the effective peep area required for measuring the temperature of the substrate 4.

That is, in this embodiment, the diameters are different from each other.
The four ring-shaped infrared lamps 1a to 1d are arranged concentrically and substantially in parallel with each other.
a to 1d are arranged so as to face the supporting member 6 on which the substrate 4 is placed through the quartz window 3 of the chamber 2, and the infrared lamp 1 at the center of the four infrared lamps 1a to 1d is arranged.
A radiation thermometer 7 for measuring the temperature of the substrate 4 is arranged so as to face the support member 6 through the opening 8 of a.

Of the four infrared lamps 1a to 1d, the area of the opening 8 of the infrared lamp 1a at the center is set on the substrate 4
Since the effective viewing port area required for temperature measurement is approximately the same, the irradiation amount of the lamp irradiated on the back surface of the substrate 4 can be made substantially uniform, and the temperature unevenness on the back surface of the substrate 4 is less likely to occur. be able to. Therefore, the quality of the film formed during CVD can be made uniform, and good growth can be performed. In the opening 8 of the infrared lamp 1a at the center, which is the peephole of the radiation thermometer 7, the irradiation amount of the substrate 4 is lower than that immediately below the infrared lamps 1a to 1d. May be moderated by appropriately increasing the irradiation amount of the infrared lamp 1a at the central portion as compared with the other infrared lamps 1b to 1d.

Further, in this embodiment, since the infrared lamps 1a to 1d are arranged so that the lamp can be irradiated from the rear surface of the substrate 4 and the radiation thermometer 7 is arranged so that the temperature can be measured from the rear surface of the substrate 4, the conventional method is adopted. Similarly, it is possible not to be affected by the change in film thickness during CVD.

[0015]

According to the present invention, the irradiation amount of lamp irradiation on the back surface of the substrate can be made substantially uniform to prevent temperature unevenness from occurring on the back surface of the substrate, and the film quality can be made uniform for good growth. There is an effect that can be.

[Brief description of drawings]

FIG. 1 is a schematic diagram showing a configuration of a semiconductor manufacturing apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic diagram showing the configuration of a conventional semiconductor manufacturing apparatus.

[Explanation of symbols]

 1a-1d Infrared lamp 2 Chamber 3 Quartz window 4 Substrate 6 Support member 7 Radiation thermometer 8 Opening

Claims (2)

[Claims] 1. A plurality of ring-shaped infrared lamps (1a, 1b, 1c, 1d) having different diameters are concentrically arranged substantially parallel to each other, and through a quartz window (3) of a chamber (2). The plurality of infrared lamps (1) are arranged so as to face a mounting table (6) on which the substrate (4) is mounted.
a, 1b, 1c, 1d), a radiation thermometer (7) is arranged so as to face the mounting table (6) through the opening (8) of the infrared lamp (1a) at the center. A semiconductor manufacturing apparatus characterized by the above. 2. The apparatus is a CVD (Chemichal Vavor depo
The semiconductor manufacturing apparatus according to claim 1, wherein the semiconductor manufacturing apparatus is a sition) apparatus.