JPH0562807A - Ceramic-based material and manufacturing method - Google Patents

Abstract

PURPOSE:To obtain a functional element with good characteristics, such as large electrostatic capacity, a large non-linear coefficient of voltage, and small dielectric loss, by using a crystalline grain of given chemical composition. CONSTITUTION:A crystalline grain has main chemical composition of Sr1-wCaw(Ti1-x-yZrxAyBz)uO3. Here, A is one or two elements out of Nb or Sb, and B is one or two elements out of Cu or Mn. U, w, x, y, and z are made of materials in ranges 0.85<=u<=1.20, 0<w<=0.30, 0<x<=0.30, 0<y<=0.05 and 0<z<=0.05, respectively. Moreover, at least one or two elements out of Li, Na and K, and one or two elements out of Bi, Cu, Al, and Si are contained in a grain boundary layer. Then, a ceramic material with good characteristics, such as large electrostatic capacity, a large non-linear coefficient alpha, and small dielectric loss, can be obtained.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a porcelain composition and a method for producing the same, and more particularly to a capacitive varistor used for protecting semiconductor parts and circuits from noise, pulses, static electricity, etc. generated in electronic devices and the like. The present invention relates to a porcelain composition for forming an electronic component referred to as and a method for producing the same.

[0002]

2. Description of the Related Art With the spread of information processing devices such as computers and office automation equipment, malfunctions of semiconductor parts such as ICs and transistors due to noise generated by these digital equipments have become a problem. Since it is easily damaged by high voltage such as pulse and static electricity, a varistor element is incorporated in an electronic circuit to protect each component.

A varistor is a functional element whose resistance value changes non-linearly with applied voltage, and its voltage-current characteristic is

[0004]

[Equation 1]

It is represented by Here, I is a current value flowing through the element, K is a varistor intrinsic coefficient, V is a voltage value applied across the varistor, and α is a coefficient indicating nonlinearity (voltage nonlinear coefficient).

The evaluation of the varistor is expressed by the voltage non-linear coefficient α, and the larger the voltage non-linear coefficient α, the greater the varistor effect. The voltage nonlinear coefficient α of the SiC varistor is 3 to 7, and the voltage nonlinear coefficient α of the ZnO varistor is 50 to 100. However, since conventional varistor such as SiC and ZnO has a low electrostatic capacitance, it has hardly been able to absorb noise having a high frequency component.

On the other hand, a ceramic capacitor has a high apparent relative permittivity ε _app , which is about 10 to 20 times that of a ZnO-based varistor. Therefore, it is used for absorbing and removing the noise, etc. It was weak and had the drawback of being destroyed by surges. Therefore, a ZnO varistor and a capacitor are combined to form a parallel circuit,
While the capacitor absorbs high-frequency noise, the varistor absorbs and removes high voltage, which is contrary to miniaturization of electronic devices and is extremely disadvantageous in terms of mounting. Therefore, a capacitive varistor has been developed and put into practical use as a multi-functional element having SrTiO ₃ as a main component, which has both functions of a capacitor characteristic and a varistor characteristic with one element.

For the capacitive varistor, an SrTiO ₃ system (JP-A-56)
-36103), Sr _1-x Ba _x TiO ₃ system (JP-A-59-92503) and the like. These capacitive varistors have Sr as a main component, and Ca as a secondary component, as well as Nb, Y, and L which are semiconducting agents.
a, W, Ta, Dy, etc., Cu, Co, M as voltage nonlinearity improvers
After n, Ni, V, etc., which are combined with sintering aids such as Si, Al, B, etc., are added and fired in a reducing atmosphere to obtain a porcelain sinter, the crystal grains of this porcelain sinter to form the insulating layer on the field, Na compounds and B ₂ O ₃ as the diffusion material, Sb ₂ O _3, Bi
₂ O ₃ , TiO ₂ , MoO ₃ , WO _{3 and the} like are used (Japanese Patent Laid-open No. Sho 61-61).
-131501 publication).

[0009]

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
The SrTiO ₃ -based varistor is a multi-functional element having both functions of varistor characteristics and capacitor characteristics, and has a feature of being small in size, and therefore is suitable for protection of small electronic devices in which ICs and LSIs are incorporated. However, due to the higher density of electronic circuits and the development of low rated voltage technology, a capacitor with a larger voltage non-linear coefficient α and a lower varistor voltage as a varistor and a high capacitance and low dielectric loss as a capacitor. Is desired.

Up to now, in order to obtain a high capacitance and a low varistor voltage, either the thickness of the element body or the size of the crystal grain has been increased. However, the method of reducing the wall thickness of the element body has a limit because the strength decreases, and the method of increasing the crystal grain size causes abnormal grain growth during firing and a uniform grain size cannot be obtained. There is a problem that the nonlinear coefficient α decreases.

The present invention has been invented in view of the above problems, and is for a high dielectric constant varistor capable of obtaining a functional element having a high capacitance, a large voltage non-linearity coefficient α, and a small dielectric loss. An object of the present invention is to provide a porcelain composition and a method for producing the same.

[0012]

In order to achieve the above objects, the porcelain composition according to the present invention has a crystal grain whose main component is (Sr _1-w
Ca _w ) (Ti _1-xy Zr _x A _y B _z ) _u O ₃ (wherein A is one or two elements selected from Nb and Sb, and B is one element selected from Cu and Mn or Two elements, u, w, x, y and z are 0.85 ≦ u ≦ 1.20 and 0 <w ≦ 0.30, 0, respectively.
<X ≦ 0.30, 0 <y ≦ 0.05, 0 <z ≦ 0.05
Value of the range), and an element consisting of at least one or two of Li, Na and K in the grain boundary layer,
It is characterized by having one or two selected from Bi and Cu and Al and Si.

Further, in the above-mentioned method for producing a porcelain composition, Nb ₂ O is used as a main raw material for SrCO ₃ , CaCO ₃ , TiO ₃ and ZrO _2.
5 and with one or two chosen from Sb ₂ O _5, CuO, and Mn
After one or two kinds selected from O ₂ and one or two kinds selected from SiO ₂ and Al ₂ O ₃ are added, and after the semiconductorizing and firing step,
At least Li, Na, or K in the sintered body that has been semiconducted and fired
One or two or more selected from the carbonates or oxides of No. 2 and a diffusing agent containing Bi ₂ O ₃ and CuO ₃ are applied, and grain boundary insulation firing is performed.

[0014]

The porcelain is produced through sintering whose main process is solid diffusion, and the crystal grains grow due to the reaction between the crystal grains accompanying this sintering. Among the characteristics of the varistor having a capacitance, the characteristics of the varistor mainly utilize the characteristics of the grain boundaries between the crystal grains. Therefore, the varistor voltage V _1mA and the voltage non-linearity coefficient α are determined by the nature and number of grain boundaries existing between the two electrodes.
On the other hand, the apparent relative permittivity ε _app, which is the characteristic of the capacitor, is _calculated by using the permittivity ε _g of the grain boundary.

[0015]

[Equation 2]

The total capacitance C is expressed by

[0017]

[Equation 3]

Is given by Here, r: crystal grain size, t:
The thickness of the grain boundary layer, S: electrode area, and d: distance between electrodes are shown.

Therefore, the capacitance C is proportional to the crystal grain diameter r and inversely proportional to the grain boundary layer thickness t. In the SrTiO ₃ system varistor having such a structure, increasing the crystal grain size reduces the number of crystal grain boundaries existing between the electrodes, so that the varistor voltage decreases and the apparent relative permittivity ε _app and electrostatic capacitance are reduced. The capacity C becomes large. However, in general, SrTiO ₃ porcelain is prone to abnormal grain growth and tends to form a mixed grain structure.Therefore, in a structure with a large crystal grain size, the number of grain boundaries in the direction of current flow varies depending on the location, and the thickness of each grain boundary layer and Variations occur in the component distribution, and as a result, variations occur in the voltage applied to each grain boundary and the height of the grain boundary barrier at each grain boundary. In such a structure, the non-linear coefficient α, which is an index representing the sharpness of the rising edge of the current with respect to the applied voltage, decreases. Therefore, in order to satisfy all the requirements of high capacitance, low varistor voltage, high nonlinear coefficient, low dielectric loss and high breakdown voltage,
It is necessary to suppress abnormal grain growth and to create a structure with a uniform and large grain size, and at the same time, a composition that creates a grain boundary in which oxygen that contributes to the formation of a grain boundary barrier easily diffuses uniformly at an appropriate concentration. Must be selected.

Therefore, according to the above-mentioned porcelain composition according to the present invention, the main component of the crystal grains is (Sr _1-w Ca _w ) (Ti _1-xy Zr _x A _y B _z ).
_u O ₃ (wherein A is one or two elements selected from Nb and Sb, B is one or two elements selected from Cu and Mn, and u, w, x, y and z Respectively 0.85 ≦ u ≦
1.20, 0 <w ≦ 0.30, 0 <x ≦ 0.30, 0 <
y ≦ 0.05, 0 <z ≦ 0.05), the crystal grain boundary layer contains at least one element selected from Li, Na, and K, and Bi and Cu and Al and
A porcelain composition containing one or two selected from Si, having a high capacitance, a large voltage nonlinear coefficient α, and a small dielectric loss can be obtained.

In the method for producing a porcelain composition described above, Nb ₂ O ₅ is used as a main raw material for SrCO ₃ , CaCO ₃ , TiO ₃ and ZrO _2.
And one or two selected from Sb ₂ O ₅ and CuO and MnO ₂
1 type or 2 types selected from the above and 1 type or 2 types selected from SiO ₂ and Al ₂ O ₃ are added, and at least Li, Na or K is added to the sintered body after the semiconductorizing firing process. One or more selected from the carbonates or oxides of
By applying a diffusing agent containing Bi ₂ O ₃ and CuO ₃ and firing at grain boundary insulation, a porcelain composition with excellent capacitor characteristics and varistor characteristics can be obtained without impairing the conventional process. ..

Note that each component is limited to the above range because the voltage is (Sr _1-w Ca _w ) (Ti _1-xy Zr _x A _y B _z ) _u O _{3 when} the values of w and x are 0. This is because the non-linear coefficient α is not improved, and when the value range of w and x exceeds 0.30, the varistor voltage suddenly increases. Further, if the value of y is 0, the semiconductor is not sufficiently advanced. On the other hand, when the value of y exceeds 0.05, the unreacted semiconducting agent is segregated at the grain boundaries, which significantly hinders the high resistance of the grain boundaries in the diffusion process. Further, when the z value is 0, oxygen diffusion is non-uniform, and the voltage non-linearity coefficient α is not improved. On the other hand, when the value range of z exceeds 0.05, the apparent relative permittivity ε _app decreases.

The (Sr Ca) / (Ti Zr AB) ratio is 0.85.
Even if it is ≦ u ≦ 1.20 and it is non-stoichiometric, it has a function of precipitating excess components at grain boundaries and stably maintaining high characteristics.

Further, SiO ₂ and Al ₂ O ₃ are mineralizers, which form a uniform grain size and maintain a high withstand voltage and a high withstand voltage linear coefficient α. Therefore, when SiO ₂ or Al ₂ O ₃ is not contained, the characteristics as a varistor may disappear after applying a voltage of 100 V for 1 minute, and there is no withstand voltage.

Further, Bi ₂ O ₃ , CuO, and one kind of carbonate or oxide of Li, Na, and K diffuses into the grain boundaries to increase the resistance of the grain boundaries, mainly for improving the voltage nonlinear coefficient α. Contribute.

[0026]

EXAMPLES Examples of a ceramic composition for a high dielectric constant varistor and a method for producing the same according to the present invention will be described below.

First, SrCO having a purity of 99% or more as a main component
₃ , CaCO ₃ , TiO ₂ , ZrO ₂ and Nb ₂ O _{5 with} a purity of 99.9% or more
Alternatively, at least one metal oxide powder of Sb ₂ O ₅ and at least one metal oxide powder of CuO ₂ or MnO ₂ having a purity of 99.9% or more is used in the composition shown in Table 1. They were weighed and blended, and at least one metal oxide powder of Al ₂ O ₃ and SiO ₂ was weighed and blended in the composition shown in Table 1, and these were mixed in a ball mill for 24 hours. After mixing, it is dried and crushed. To this powder, 3 wt% of 10 wt% polyvinyl alcohol aqueous solution is added and mixed as a binder,
Granulate to 80 mesh pass, and the granulated powder is 10m in diameter.
It was pressure-molded into a disk shape with m and a thickness of 0.8 mm. After degreasing these molded bodies in air at a temperature of 1000 ° C., in a reducing atmosphere of N ₂ (80 to 99 vol%) + H ₂ (1 to 20 vol%), in a temperature range of 1400 to 1560 ° C. Firing was performed for 2 to 10 hours to obtain a sintered body.

On the other hand, Bi ₂ O ₃ , CuO and Na ₂ CO ₃ , or
One of Li ₂ CO ₃ and K ₂ CO ₃ was weighed and mixed so as to have the composition shown in Table 1. To 100 parts by weight of this mixture, the same amount of an organic solvent containing ethyl cellulose as the main component was added.
00 parts by weight were mixed and kneaded for 3 hours to obtain a diffusing agent paste. Next, the diffusing agent paste was applied to one surface of the sintered body and dried. After that, heat treatment is performed at 1100 ° C for 1 hour in air or in an oxygen atmosphere to thermally diffuse an oxide containing one of Bi, Cu and Na, Li or K into the grain boundaries of the sintered body. A porcelain composition having a high dielectric constant was obtained. Here, Na ₂ CO ₃ is Na ₂ O, Li ₂ CO ₃ is Li ₂ O, K ₂ CO
₃ becomes K ₂ O and diffuses into the grain boundaries.

Further, in order to examine the characteristics of the porcelain composition, silver paste was applied on both surfaces thereof and baked at a temperature of 800 ° C. to form electrodes, thereby completing the device.

Further, SrCO ₃ , CaCO ₃ , TiO ₂ , ZrO ₂ , Nb ₂ O
₅ , Sb ₂ O ₅ , CuO, MnO _{2 and the} like are shown in the form of metal oxides or carbonates, but it suffices that a predetermined metal oxide can be finally obtained, and the starting components are metal elements and carbonates. Alternatively, hydroxide phosphate, nitrate, or oxalate may be used.

Although silver electrodes are formed on both surfaces of the sintered body, electrodes made of other known materials may be used. Furthermore, the sintering conditions are not limited to the conditions of the embodiment, and may be any conditions as long as the atmosphere in which the sintered body is sufficiently semiconducting and the grain boundaries can be sufficiently insulated. With respect to the porcelain composition obtained by the composition of Table 1, the voltage non-linearity coefficient α, the varistor voltage V _1mA , the apparent relative permittivity ε _app and the dielectric loss tan δ were measured as the element characteristic evaluation, and the results are shown in Table 1. Indicated.

The voltage non-linearity coefficient α was determined by the following equation by measuring the terminal voltage V _1mA when a current of ₁ mA flows and the terminal voltage V _10mA when a current of 10 mA flows.

[0033]

[Equation 4]

The apparent relative permittivity ε _app and the dielectric loss tan δ are values measured by applying 1 KH _Z and AC 1V.

[0035]

[Table 1]

[0036]

[Table 1-2]

[0037]

[3 in Table 1]

[0038]

[4 in Table 1]

[0039]

[5 in Table 1]

[0040]

[6 in Table 1]

Those marked with * in the table are those within the scope of the present invention, and all other than the above are those outside the scope of the present invention.

As is clear from Table 1, the characteristics of the semiconductor ceramic composition for varistor within the scope of the present invention are that the voltage non-linearity coefficient α is approximately 7 or more, and the varistor voltage V _1mA.
Is 100 V or less, apparent relative permittivity ε _app is 30000
The dielectric loss tan δ is as large as the above and is as low as about 2% or less, and it has an excellent combined function of a capacitor and a varistor.

Therefore, the capacitor can be used not only as a capacitor and as a varistor, but also as a single element having the functions of both a capacitor and a varistor.
It is very effective for downsizing electronic devices,
It is possible to manufacture products with extremely high utility value for electrical and electronic equipment.

[0044]

(Effect of the invention) (Sr _1-w Ca _w ) (Ti _1-xy Zr _x A _y B _z ) _u O ₃ (In the formula, A is one or two elements selected from Nb and Sb,
B is one or two elements selected from Cu and Mn, u,
w, x, y, and z are 0.85 ≦ u ≦ 1.2, respectively.
0, 0 <w ≦ 0.30, 0 <x ≦ 0.30, 0 <y ≦
0.05, a value in the range of 0 <z ≦ 0.05), and at least one element selected from Li, Na, and K in the crystal grain boundary layer, and Bi and Cu. Since it has one or two selected from Al and Si, it is possible to obtain a functional element having a high capacitance, a large voltage non-linearity coefficient α, and a small dielectric loss.

In the above-mentioned method for producing a porcelain composition, NbO ₅ is used as the main raw material for SrCO ₃ , CaCO ₃ , TiO ₃ and ZrO _2.
And one or two selected from Sb ₂ O ₅ and CuO and MnO ₂
1 type or 2 types selected from the above and 1 type or 2 types selected from SiO ₂ and Al ₂ O ₃ are added, and at least Li, Na or K is added to the sintered body after the semiconductorizing firing process. One or more selected from the carbonates or oxides of
Since a diffusion agent containing Bi ₂ O ₃ and CuO ₃ is applied and grain boundary insulation firing is performed, it is possible to obtain a porcelain composition excellent in both capacitor characteristics and varistor characteristics without impairing the process of the prior art. .. In particular, it was possible to obtain a material having a large voltage non-linearity coefficient α even with a high dielectric constant.

Therefore, it is possible to use not only the capacitor alone and the varistor alone but also one element to have the functions of both the capacitor and the varistor.
It is very effective for downsizing electronic devices,
It is possible to manufacture products with extremely high utility value for electrical and electronic equipment.

Claims (2)

[Claims] 1. The main component of crystal grains is (Sr _1-w Ca _w ) (Ti _1-xy Zr
_x A _y B _z ) _u O ₃ (wherein A is one or two elements selected from Nb and Sb, B is one or two elements selected from Cu and Mn, and u, w , X, y and z are 0.85 respectively
≦ u ≦ 1.20, 0 <w ≦ 0.30, 0 <x ≦ 0.3
(Values in the range of 0, 0 <y ≦ 0.05, 0 <z ≦ 0.05)
In the crystal grain boundary layer at least Li, Na
A semiconductor porcelain material comprising an element consisting of one or two of K and K and one or two selected from Bi and Cu and Al and Si. _2. One or two kinds selected from Nb ₂ O ₅ and Sb ₂ O ₅ as main raw materials of SrCO ₃ , CaCO ₃ , TiO ₃ and ZrO ₂ , and CuO.
And one or two selected from MnO ₂ and SiO ₂ and Al ₂ O ₃
1 type or 2 types selected from the above, and after the semiconducting firing step, at least 1 type or 2 or more types selected from carbonates or oxides of Li, Na or K are added to the semiconducting sintered body, The method for producing a semiconductor porcelain material according to claim 1, wherein a diffusing agent containing Bi ₂ O ₃ and CuO ₃ is applied and grain boundary insulation firing is performed.