JPH0559586B2 - - Google Patents
Info
- Publication number
- JPH0559586B2 JPH0559586B2 JP57161661A JP16166182A JPH0559586B2 JP H0559586 B2 JPH0559586 B2 JP H0559586B2 JP 57161661 A JP57161661 A JP 57161661A JP 16166182 A JP16166182 A JP 16166182A JP H0559586 B2 JPH0559586 B2 JP H0559586B2
- Authority
- JP
- Japan
- Prior art keywords
- ion
- channel
- ion implantation
- channel mos
- mos transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005468 ion implantation Methods 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 17
- 229910052698 phosphorus Inorganic materials 0.000 claims description 16
- 239000011574 phosphorus Substances 0.000 claims description 16
- -1 phosphorus ions Chemical class 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 description 18
- 230000001133 acceleration Effects 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010884 ion-beam technique Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- VVRKSAMWBNJDTH-UHFFFAOYSA-N difluorophosphane Chemical compound FPF VVRKSAMWBNJDTH-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16166182A JPS5950563A (ja) | 1982-09-17 | 1982-09-17 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16166182A JPS5950563A (ja) | 1982-09-17 | 1982-09-17 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5950563A JPS5950563A (ja) | 1984-03-23 |
| JPH0559586B2 true JPH0559586B2 (ko) | 1993-08-31 |
Family
ID=15739424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16166182A Granted JPS5950563A (ja) | 1982-09-17 | 1982-09-17 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5950563A (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11288896A (ja) | 1998-04-03 | 1999-10-19 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS549470A (en) * | 1977-06-22 | 1979-01-24 | Shin Meiwa Ind Co Ltd | Refuse treating device |
-
1982
- 1982-09-17 JP JP16166182A patent/JPS5950563A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS549470A (en) * | 1977-06-22 | 1979-01-24 | Shin Meiwa Ind Co Ltd | Refuse treating device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5950563A (ja) | 1984-03-23 |
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