JPH0558744A - Aluminum nitride sintered body - Google Patents
Aluminum nitride sintered bodyInfo
- Publication number
- JPH0558744A JPH0558744A JP3105146A JP10514691A JPH0558744A JP H0558744 A JPH0558744 A JP H0558744A JP 3105146 A JP3105146 A JP 3105146A JP 10514691 A JP10514691 A JP 10514691A JP H0558744 A JPH0558744 A JP H0558744A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- sintered body
- nitride sintered
- thermal conductivity
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Ceramic Products (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は着色した窒化アルミニウ
ム焼結体に係り、より詳しくは緻密質で高熱伝導率をも
ち、かつ黒色、茶色、緑色等の色調をもった窒化アルミ
ニウム焼結体でしかも電気特性に優れた焼結体に関す
る。又、本焼結体を用いた回路基板及び半導体パッケー
ジに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a colored aluminum nitride sintered body, and more particularly to a dense aluminum nitride sintered body having a high thermal conductivity and a color tone such as black, brown or green. Moreover, the present invention relates to a sintered body having excellent electric characteristics. Further, the present invention relates to a circuit board and a semiconductor package using the sintered body.
【０００２】[0002]
【従来の技術】最近のＬＳＩの進歩はめざましく、集積
度の向上が著しい。これにはＩＣチップサイズの向上も
寄与しており、ＩＣチップサイズの向上に伴ってパッケ
ージ当りの発熱量が増大している。このため基板材料の
放熱性が重要視されるようになってきた。また、従来Ｉ
Ｃ基板として用いられていたアルミナ焼結体の熱伝導率
では放熱性が不十分であり、ＩＣチップの発熱量の増大
に対応できなくなりつつある。このためアルミナ基板に
代わるものとして、高熱伝導性のベリリア基板が検討さ
れているが、ベリリアは毒性が強く取扱いが難しいとい
う欠点がある。2. Description of the Related Art Recent advances in LSI are remarkable, and the degree of integration is remarkable. The improvement of the IC chip size also contributes to this, and the heat generation amount per package increases with the improvement of the IC chip size. Therefore, the heat dissipation of the substrate material has come to be emphasized. In addition, conventional I
The heat conductivity of the alumina sintered body used as the C substrate is insufficient, and it is becoming difficult to cope with the increase in the heat generation amount of the IC chip. Therefore, a beryllia substrate having high thermal conductivity has been studied as an alternative to the alumina substrate, but beryllia has a drawback that it is highly toxic and difficult to handle.
【０００３】一方、窒化アルミニウム（ＡｌＮ）焼結体
は、本来、材質的に高熱伝導性、高絶縁性を有し、毒性
もないため、半導体工業において回路基板材料あるいは
パッケージ材料として注目を集めている。On the other hand, an aluminum nitride (AlN) sintered body originally has high thermal conductivity, high insulating property, and is not toxic, and therefore has attracted attention as a circuit board material or a package material in the semiconductor industry. There is.
【０００４】[0004]
【発明が解決しようとする課題】上述のように窒化アル
ミニウムは理論的には単結晶としては高熱伝導性、高絶
縁性を有する材料である。しかしながら、窒化アルミニ
ウム粉末から焼結体を製造する場合、窒化アルミニウム
粉末自体の焼結性が良くないため、粉末成形後、焼結し
て得られる窒化アルミニウム焼結体の相対密度（窒化ア
ルミニウムの理論密度３．２６ｇ／ｃｍ3を基準とす
る）は、焼結条件にもよるが、高々７０〜８０％しか示
さず、多量の気孔を包含する。As described above, aluminum nitride is theoretically a material having high thermal conductivity and high insulation as a single crystal. However, when a sintered body is manufactured from aluminum nitride powder, since the sinterability of the aluminum nitride powder itself is not good, the relative density of the aluminum nitride sintered body obtained by sintering after powder molding (the theory of aluminum nitride The density is 3.26 g / cm 3 ), but depending on the sintering conditions, it shows at most 70 to 80% and contains a large amount of pores.
【０００５】一方、窒化アルミニウム焼結体の如き絶縁
性セラミックスの熱伝導機構は、フォノン伝導を主体と
するため気孔、不純物等の欠陥はフォノン散乱を起こ
し、熱伝導性は低レベルのものしか得られない。これら
の状況に対し、高熱伝導性窒化アルミニウム焼結体を得
るために種々の提案がなされている。On the other hand, since the heat conduction mechanism of insulating ceramics such as aluminum nitride sintered body is mainly phonon conduction, defects such as pores and impurities cause phonon scattering, and only a low level of heat conductivity can be obtained. I can't. For these situations, various proposals have been made to obtain a highly heat conductive aluminum nitride sintered body.
【０００６】しかしながら、高熱伝導性の窒化アルミニ
ウム焼結体を製造するためには、高純度の原料を使用
し、また工程中の不純物の混合も極力防ぐことが必要と
されており、このようにして得られた窒化アルミニウム
は白色透明もしくは薄く着色したものに限られ、光の透
過を問題とする用途等には使用できなかった。そこで、
光の透過を問題とする用途等に着色窒化アルミニウムの
開発が望まれていた。さらに、絶縁基板として用いるた
めには電気抵抗絶縁耐圧が必要である。However, in order to produce a highly heat-conductive aluminum nitride sintered body, it is necessary to use a high-purity raw material and prevent the mixing of impurities during the process as much as possible. The aluminum nitride thus obtained was limited to white transparent or lightly colored one, and could not be used for applications where light transmission is a problem. Therefore,
The development of colored aluminum nitride has been desired for applications in which light transmission is a problem. Furthermore, in order to use it as an insulating substrate, electric resistance withstand voltage is required.
【０００７】[0007]
【課題を解決するための手段】本発明者は、上記課題を
解決するため従来より研究を重ねてきたが、窒化アルミ
ニウムに対しある種の元素又はその化合物を添加するこ
とが有効であることを知見し、本発明に至った。The inventors of the present invention have conducted extensive research in order to solve the above problems. However, it was found that it is effective to add a certain element or its compound to aluminum nitride. They found out and arrived at the present invention.
【０００８】すなわち、本発明はＡｌＮを主成分とし、
Ｔｉ、Ｚｒ、Ｈｆ、Ｖ、Ｎｂ、Ｔａ、Ｃｒ、Ｍｏ、Ｗ、
Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、ＮｄおよびＨｏからなる群か
ら選ばれた１種以上の金属元素及び／又はその化合物を
０．０１〜３．０重量％含有し、着色を呈し、かつ電気
抵抗が１０13Ωｃｍ以上絶縁破壊電圧が１０ｋＶ／ｍｍ
以上であることを特徴とする窒化アルミニウム焼結体で
ある。That is, the present invention is mainly composed of AlN,
Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W,
It contains 0.01 to 3.0% by weight of one or more metal elements selected from the group consisting of Mn, Fe, Co, Ni, Nd, and Ho, and / or a compound thereof, exhibits coloring, and has an electric resistance. 10 13 Ωcm or more Dielectric breakdown voltage is 10 kV / mm
The aluminum nitride sintered body is characterized by the above.
【０００９】上記着色窒化アルミニウム焼結体の製造
は、ＡｌＮを主成分とし、Ｔｉ、Ｚｒ、Ｈｆ、Ｖ、Ｎ
ｂ、Ｔａ、Ｃｒ、Ｍｏ、Ｗ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、
ＮｄおよびＨｏからなる群から選ばれた少なくとも１種
の金属元素を０．０１〜３．０重量％含有する原料粉末
を使用して、又、必要な場合には上記原料粉末に焼結助
剤としてのIIａ又はIIIａ族元素を元素換算で０．０１
〜１．０重量％となるように酸化物、窒化物、フッ化物
又は炭化物等の化合物として添加し、成形し、非酸化性
の窒素含有雰囲気中にて１６００〜２０００℃で焼結す
る。The above-mentioned colored aluminum nitride sintered body is manufactured by using AlN as a main component and using Ti, Zr, Hf, V, N.
b, Ta, Cr, Mo, W, Mn, Fe, Co, Ni,
A raw material powder containing 0.01 to 3.0% by weight of at least one metal element selected from the group consisting of Nd and Ho is used, and if necessary, a sintering aid is added to the raw material powder. Of the group IIa or IIIa element as element is 0.01
To 1.0 wt% is added as a compound such as an oxide, a nitride, a fluoride, or a carbide, molded, and sintered at 1600 to 2000 ° C. in a non-oxidizing nitrogen-containing atmosphere.
【００１０】本発明において高熱伝導性の着色窒化アル
ミニウムを得るために使用する着色用添加剤としては、
次のような元素又はその化合物を挙げることができる。
黒色用添加剤としては、ＴｉＯ2、ＺｒＯ2、ＣａＣ
Ｏ3、ＨｆＯ2、Ｖ2Ｏ3、Ｎｂ2Ｏ3、Ｔａ2Ｏ3、Ｃｒ、Ｍ
ｏ、ＷＯ3、ＭｎＯ、Ｆｅ2Ｏ3、ＣｏＯ、ＮｉＯ等、茶
色用添加剤としては、Ｎｄ2Ｏ3等、緑色用添加剤として
はＨｏ2Ｏ3等である。これらは酸化物に限定されず、加
熱分解し、これらの元素を放出する化合物であれば用い
ることができる。このような例として例えば炭酸塩、水
酸化物、有機化合物等である。The coloring additive used to obtain the colored aluminum nitride having high thermal conductivity in the present invention includes:
The following elements or compounds thereof can be mentioned.
Black additives include TiO 2 , ZrO 2 , CaC
O 3 , HfO 2 , V 2 O 3 , Nb 2 O 3 , Ta 2 O 3 , Cr, M
o, WO 3 , MnO, Fe 2 O 3 , CoO, NiO, etc., the additive for brown color is Nd 2 O 3, etc., and the additive for green color is Ho 2 O 3 etc. These are not limited to oxides, and any compound that decomposes upon heating and releases these elements can be used. Examples thereof include carbonates, hydroxides, organic compounds and the like.
【００１１】これらの着色用添加剤は、所望により組合
せて用いることもできる。また、本発明の焼結体の製造
には、周期律表IIａ、IIIａ族の元素又はその化合物を
０．０１〜５．０重量％で焼結助剤として使用する場合
があるが、それらは具体的にはＣａＯ、Ｙ2Ｏ3、ＣａＣ
Ｏ3、ＣｅＯ2、ＣａＣ2などが例示できる。If desired, these coloring additives may be used in combination. Further, in the production of the sintered body of the present invention, an element of Group IIa or IIIa of the periodic table or a compound thereof may be used as a sintering aid in an amount of 0.01 to 5.0% by weight. Specifically, CaO, Y 2 O 3 , CaC
O 3 , CeO 2 , CaC 2 and the like can be exemplified.
【００１２】焼結体は電気絶縁性に優れ、電気抵抗が１
０13Ωｃｍ、絶縁破壊電圧が１０ｋＶ／ｍｍであること
を特徴とする。The sintered body is excellent in electric insulation and has an electric resistance of 1
It is characterized in that the dielectric breakdown voltage is 0 13 Ωcm and the dielectric breakdown voltage is 10 kV / mm.
【００１３】[0013]
【作用】本発明においては、発色剤としてＴｉ、Ｚｒ、
Ｈｆ、Ｖ、Ｎｂ、Ｔａ、Ｃｒ、Ｍｏ、Ｗ、Ｍｎ、Ｆｅ、
Ｃｏ、Ｎｉ、ＮｄおよびＨｏからなる群から選ばれた少
なくとも１種の金属元素を０．０１〜３．０重量％含有
させた窒化アルミニウム粉末を原料粉末として用い焼結
することによって、着色し、かつ高熱伝導率で電気抵抗
が１０13Ωｃｍ以上、絶縁破壊電圧が１０ｋＶ／ｍｍ以
上の窒化アルミニウム焼結体が得られる。In the present invention, as the color former, Ti, Zr,
Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe,
The aluminum nitride powder containing 0.01 to 3.0% by weight of at least one metal element selected from the group consisting of Co, Ni, Nd, and Ho is used as a raw material powder for sintering, and colored. Moreover, an aluminum nitride sintered body having a high thermal conductivity, an electric resistance of 10 13 Ωcm or more, and a dielectric breakdown voltage of 10 kV / mm or more can be obtained.
【００１４】この場合窒化アルミニウム粉末は、高純度
のものを用いる必要がある。酸素量としては２．５重量
％以下、炭素を０．５重量％以下、遷移金属又はその化
合物以外の不純物を０．０１重量％以下、そして金属元
素又はその化合物は合計で０．１重量％以下の粉末でな
ければ、必要な熱伝導率と色調を同時に満足しない。In this case, the aluminum nitride powder should be of high purity. The amount of oxygen is 2.5 wt% or less, carbon is 0.5 wt% or less, impurities other than transition metal or its compound are 0.01 wt% or less, and the total amount of metal element or its compound is 0.1 wt%. Only the following powders will satisfy the required thermal conductivity and color tone at the same time.
【００１５】窒化アルミニウム粉末の比表面積は、２．
０ｍ2／ｇ以上のものが好ましい。比表面積がこれより
小さいと緻密質の焼結体が得られない。本発明において
黒色以外の茶色、緑色に着色した高熱伝導性の窒化アル
ミニウム焼結体を得るためには、さらに高純度の窒化ア
ルミニウム粉末を使用することが必要であり、遷移金属
元素又はその化合物は０．０１重量％以下となるように
窒化アルミニウム粉末の純度をコントロールする。The specific surface area of the aluminum nitride powder is 2.
It is preferably 0 m 2 / g or more. If the specific surface area is smaller than this, a dense sintered body cannot be obtained. Brown other than black in the present invention, in order to obtain a highly heat-conductive aluminum nitride sintered body colored green, it is necessary to use a higher purity aluminum nitride powder, the transition metal element or a compound thereof The purity of the aluminum nitride powder is controlled so as to be 0.01% by weight or less.
【００１６】そして、このような窒化アルミニウム粉末
に焼結助剤及び着色剤として例えばＮｄを用いれば、茶
色に着色した窒化アルミニウム焼結体を得ることができ
る。When Nd is used as a sintering aid and a colorant in such an aluminum nitride powder, a brown-colored aluminum nitride sintered body can be obtained.
【００１７】原料粉末であるＡｌＮ粉末中におけるこれ
らの金属元素の含有量が０．０１重量％未満では着色Ａ
ｌＮ焼結体の色調が薄く、光の透過を防止する用途に用
いるためには不十分であり、３．０重量％を越えると金
属元素のＡｌＮ中への固溶等によって焼結体の熱伝導率
が通常１００ｗ／ｍ・ｋ以下に低下し、さらに粒界に析
出することで、電気抵抗が低下あるいは絶縁耐圧が劣化
する。そのためＩＣ基板等として使用できない。又、Ａ
ｌＮ粉末の他の特性として、高熱伝導率と着色を同時に
得るために酸素含有量は０．５〜２．５重量％の範囲が
好ましく、発色剤として添加する金属元素以外のＳｉ等
のＡｌＮへの固溶元素の含有量も１０００ｐｐｍ以下で
あることが好ましい。更に、ＡｌＮ粉末の比表面積は、
緻密な焼結体を得るため２．０〜５．０ｍ2／ｇが好ま
しい。When the content of these metal elements in the AlN powder as the raw material powder is less than 0.01% by weight, the coloring A
The color tone of the 1N sintered body is too light to be used for the purpose of preventing the transmission of light. The conductivity is usually reduced to 100 w / m · k or less, and the precipitation is further caused at the grain boundaries, which lowers the electric resistance or the dielectric strength. Therefore, it cannot be used as an IC substrate or the like. Also, A
As another characteristic of the 1N powder, the oxygen content is preferably in the range of 0.5 to 2.5% by weight in order to obtain high thermal conductivity and coloring at the same time. The content of the solid solution element is preferably 1000 ppm or less. Furthermore, the specific surface area of AlN powder is
In order to obtain a dense sintered body, 2.0 to 5.0 m 2 / g is preferable.
【００１８】上記のようにして得られた本発明の着色し
た窒化アルミニウム焼結体は、いずれも１５０Ｗ／ｍＫ
以上の高い熱伝導性を有しており、緻密質な焼結体表面
にＡｇ、Ａｕ等の厚膜ペースト、Ｗ、Ｍｏ等の高融点金
属ペーストを印刷し、焼成することによって、窒化アル
ミニウム回路基板として有用である。さらにこのような
基板に半導体素子、リードフレームを組合わせてＩＣパ
ッケージとして用いる。All the colored aluminum nitride sintered bodies of the present invention obtained as described above are 150 W / mK.
An aluminum nitride circuit having high thermal conductivity as described above and printing a thick film paste such as Ag or Au or a high melting point metal paste such as W or Mo on the surface of a dense sintered body and firing the circuit. It is useful as a substrate. Further, a semiconductor element and a lead frame are combined on such a substrate to be used as an IC package.
【００１９】[0019]
【実施例】次に実施例に基づいて本発明を具体的に説明
する。 実施例１ 窒化アルミニウム粉末（ＢＥＴ３．５ｍ2／ｇ、酸素
０．５０重量％、金属不純物０．０１重量％）に、フェ
ノール樹脂を１．０重量％、Ｙ2Ｏ3を１．０重量％、さ
らに下記の表１に示した添加物を加え、３０×３０×３
ｍｍの成形体を製造した。EXAMPLES Next, the present invention will be specifically described based on examples. Example 1 Aluminum nitride powder (BET 3.5 m 2 / g, oxygen 0.50% by weight, metal impurities 0.01% by weight), phenol resin 1.0% by weight, Y 2 O 3 1.0% by weight. Then, add the additives shown in Table 1 below, and add 30 × 30 × 3.
mm shaped bodies were produced.
【００２０】[0020]
【表１】 [Table 1]
【００２１】成形体は窒素フロー中１８００℃で７時間
焼成し、板状の焼結体を得た。得られた焼結体の色調、
熱伝導率、密度を測定した。本発明の焼結体が着色され
た高熱伝導の窒化アルミニウムであり高い絶縁抵抗と絶
縁耐圧をもつ従来にない性能を持つことがわかる。The molded body was fired at 1800 ° C. for 7 hours in a nitrogen flow to obtain a plate-shaped sintered body. The color tone of the obtained sintered body,
The thermal conductivity and the density were measured. It can be seen that the sintered body of the present invention is colored aluminum nitride having a high thermal conductivity and has an unprecedented performance with high insulation resistance and withstand voltage.
【００２２】実施例２ 実施例１に示した番号１の焼結体に市販のＡｕペースト
を印刷し、９３０℃大気中で焼成したところ、接着強度
３ｋｇ／ｍ2をもつ導体回路が形成されることがわかっ
た。すなわち、本発明の窒化アルミニウム焼結体は高熱
伝導の回路基板として使用可能である。Example 2 When a commercially available Au paste was printed on the sintered body of No. 1 shown in Example 1 and fired in the air at 930 ° C., a conductor circuit having an adhesive strength of 3 kg / m 2 was formed. I understood it. That is, the aluminum nitride sintered body of the present invention can be used as a circuit board having high thermal conductivity.
【００２３】[0023]
【発明の効果】本発明は、緻密質で高熱伝導率をもち、
かつ、黒色等の色調を持った窒化アルミニウム焼結体
で、しかも電気抵抗、絶縁破壊電圧特性に優れたもので
ある。回路基板及び半導体パッケージに適用して効果が
ある。INDUSTRIAL APPLICABILITY The present invention is dense and has high thermal conductivity,
Moreover, it is an aluminum nitride sintered body having a color tone such as black, and has excellent electric resistance and dielectric breakdown voltage characteristics. It is effective when applied to a circuit board and a semiconductor package.
Claims (1)
ｆ、Ｖ、Ｎｂ、Ｔａ、Ｃｒ、Ｍｏ、Ｗ、Ｍｎ、Ｆｅ、Ｃ
ｏ、Ｎｉ、Ｎｄ及びＨｏからなる群から選ばれた１種以
上の金属元素及び／又はその化合物を０．０１〜３．０
重量％含有し、着色を呈し、かつ電気抵抗が１０13Ωｃ
ｍ以上絶縁破壊電圧が１０ｋＶ／ｍｍ以上であることを
特徴とする窒化アルミニウム焼結体。1. A main component of AlN, Ti, Zr, H
f, V, Nb, Ta, Cr, Mo, W, Mn, Fe, C
0.01 to 3.0 of one or more metal elements selected from the group consisting of o, Ni, Nd and Ho and / or compounds thereof.
% By weight, exhibits coloring, and has an electric resistance of 10 13 Ωc
An aluminum nitride sintered body having a dielectric breakdown voltage of 10 kV / mm or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3105146A JPH0558744A (en) | 1991-04-11 | 1991-04-11 | Aluminum nitride sintered body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3105146A JPH0558744A (en) | 1991-04-11 | 1991-04-11 | Aluminum nitride sintered body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0558744A true JPH0558744A (en) | 1993-03-09 |
Family
ID=14399592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3105146A Pending JPH0558744A (en) | 1991-04-11 | 1991-04-11 | Aluminum nitride sintered body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0558744A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5656113A (en) * | 1993-08-03 | 1997-08-12 | Ngk Spark Plug Co., Ltd. | Method of manufacturing a multilayered wiring substrate of aluminum nitride having a high dielectric layer |
| EP1184879A1 (en) * | 1999-02-10 | 2002-03-06 | Asahi Glass Company Ltd. | Conductive nitride film, process for producing the same, and antireflection object |
| JP2002100826A (en) * | 2000-09-21 | 2002-04-05 | Toshiba Corp | Submount material |
| JP2003020283A (en) * | 2001-07-05 | 2003-01-24 | Denki Kagaku Kogyo Kk | Aluminum nitride sintered compact, production method therefor and its use |
| US6953761B2 (en) | 2002-12-27 | 2005-10-11 | Hitachi, Ltd. | Aluminum nitride sintered body and substrate for electronic devices |
| JP2009121807A (en) * | 2007-11-12 | 2009-06-04 | Robert Bosch Gmbh | Ceramic glow plug having reduced heater interval |
| JP2015020937A (en) * | 2013-07-22 | 2015-02-02 | 住友電気工業株式会社 | Aluminum nitride sintered body and method of producing the same |
| CN115108537A (en) * | 2022-07-10 | 2022-09-27 | 湖南大学 | Aluminum nitride powder, preparation method thereof and copper-clad plate comprising aluminum nitride powder |
-
1991
- 1991-04-11 JP JP3105146A patent/JPH0558744A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5656113A (en) * | 1993-08-03 | 1997-08-12 | Ngk Spark Plug Co., Ltd. | Method of manufacturing a multilayered wiring substrate of aluminum nitride having a high dielectric layer |
| EP1184879A1 (en) * | 1999-02-10 | 2002-03-06 | Asahi Glass Company Ltd. | Conductive nitride film, process for producing the same, and antireflection object |
| EP1184879A4 (en) * | 1999-02-10 | 2003-04-23 | Asahi Glass Co Ltd | Conductive nitride film, process for producing the same, and antireflection object |
| JP2002100826A (en) * | 2000-09-21 | 2002-04-05 | Toshiba Corp | Submount material |
| JP2003020283A (en) * | 2001-07-05 | 2003-01-24 | Denki Kagaku Kogyo Kk | Aluminum nitride sintered compact, production method therefor and its use |
| US6953761B2 (en) | 2002-12-27 | 2005-10-11 | Hitachi, Ltd. | Aluminum nitride sintered body and substrate for electronic devices |
| JP2009121807A (en) * | 2007-11-12 | 2009-06-04 | Robert Bosch Gmbh | Ceramic glow plug having reduced heater interval |
| JP2015020937A (en) * | 2013-07-22 | 2015-02-02 | 住友電気工業株式会社 | Aluminum nitride sintered body and method of producing the same |
| CN115108537A (en) * | 2022-07-10 | 2022-09-27 | 湖南大学 | Aluminum nitride powder, preparation method thereof and copper-clad plate comprising aluminum nitride powder |
| CN115108537B (en) * | 2022-07-10 | 2023-09-19 | 湖南大学 | Aluminum nitride powder, preparation method thereof and copper-clad plate comprising aluminum nitride powder |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6911893B2 (en) | Ceramic electronic component | |
| EP1122211A1 (en) | PTC composite material | |
| JPH0717454B2 (en) | Aluminum nitride sintered body and manufacturing method thereof | |
| JPH0558744A (en) | Aluminum nitride sintered body | |
| JPS5849510B2 (en) | Chitsuka Aluminum Shouketsutaino | |
| JP3493384B2 (en) | Voltage non-linear resistance element and method of manufacturing the same | |
| JP2512474B2 (en) | Colored mullite ceramic composition | |
| US5264388A (en) | Sintered body of aluminum nitride | |
| KR920003226B1 (en) | Sintered body of aluminium ni-tride | |
| US5166859A (en) | Laminated semiconductor ceramic capacitor with a grain boundary-insulated structure and a method for producing the same | |
| KR940001710B1 (en) | Sintering process of aluminum nitride | |
| JPH11246268A (en) | Semiconductor ceramic and semiconductor ceramic device | |
| JPS6256109B2 (en) | ||
| KR20010051354A (en) | Semiconducting Ceramic Material, Process for Producing the Ceramic Material, and Thermistor | |
| JPH02124772A (en) | Aluminum nitride sintered compact and its production | |
| KR20000076768A (en) | Semiconducting ceramic and monolithic electronic element fabricated from the same | |
| JP2899893B2 (en) | Aluminum nitride sintered body and method for producing the same | |
| JPS6217076A (en) | Aluminum nitride powder composition | |
| JP3166787B2 (en) | Barium titanate-based semiconductor porcelain composition | |
| KR0139786B1 (en) | Ceramic composition of colored alumina | |
| JP2784551B2 (en) | Aluminum nitride substrate | |
| JP2707706B2 (en) | Grain boundary insulating semiconductor ceramic capacitor and method of manufacturing the same | |
| JP2772581B2 (en) | Black aluminum nitride sintered body | |
| JP2704194B2 (en) | Black aluminum nitride sintered body | |
| JPH0788256B2 (en) | Method for manufacturing aluminum nitride sintered body |