JPH0555636A - Manufacture of light emitting semiconductor device - Google Patents
Manufacture of light emitting semiconductor deviceInfo
- Publication number
- JPH0555636A JPH0555636A JP3211152A JP21115291A JPH0555636A JP H0555636 A JPH0555636 A JP H0555636A JP 3211152 A JP3211152 A JP 3211152A JP 21115291 A JP21115291 A JP 21115291A JP H0555636 A JPH0555636 A JP H0555636A
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- JP
- Japan
- Prior art keywords
- substrate
- mold
- resin
- light emitting
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は注型成形による半導体発
光装置の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor light emitting device by cast molding.
【０００２】[0002]
【従来の技術】絶縁性基板の一方の主面又はこの主面の
凹部に光反射性及び導電性を有する電極体を配設し、更
に電極体の上面に発光素子を載置して成る表面実装型発
光ダイオードが公知となっている。表面実装型発光ダイ
オードでは、基板の他方の主面まで伸びる電極体を設け
ることによってリードレス化及び表面実装化が可能とな
る。また、電極体が光反射性を具備するので、発光ダイ
オードチップから発生する光を電極体の表面で所定の方
向に反射させて、発光効率を向上することが可能であ
る。従来、この種の発光ダイオードの発光素子を被覆す
る樹脂封止体を形成するとき、絶縁性基板の主面上に流
動性を有する封止用樹脂を滴下し、硬化させてしてい
た。2. Description of the Related Art A surface formed by disposing an electrode body having light reflectivity and conductivity on one main surface of an insulating substrate or a concave portion of this main surface, and further mounting a light emitting element on the upper surface of the electrode body. Mounted light emitting diodes are known. The surface mount type light emitting diode can be leadless and surface mountable by providing an electrode body extending to the other main surface of the substrate. Further, since the electrode body has light reflectivity, it is possible to improve the light emission efficiency by reflecting the light generated from the light emitting diode chip on the surface of the electrode body in a predetermined direction. Conventionally, when a resin encapsulant covering a light emitting element of this type of light emitting diode is formed, a fluid encapsulating resin is dropped on the main surface of an insulating substrate and cured.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、前記の
方法では流動性を有する封止用樹脂が絶縁性基板の主面
上で平坦状に固化するので、封止用樹脂により集光性の
あるレンズ部を形成することができない。そこで、発光
ダイオードの集光性を向上するため、本発明者は周知の
トランスファモールド法を利用してレンズ部を備えた樹
脂封止体を形成する方法を試みたが、この方法では高価
な金型を必要とする欠点がある。However, in the above method, since the sealing resin having fluidity is solidified in a flat state on the main surface of the insulating substrate, the lens having a condensing property by the sealing resin is used. No part can be formed. Therefore, in order to improve the light-collecting property of the light emitting diode, the present inventor has tried a method of forming a resin sealing body having a lens portion by using a well-known transfer molding method. It has the drawback of requiring a mold.
【０００４】そこで本発明は高輝度化及び改善された集
光特性を備えた半導体発光装置を容易に製造できる方法
を提供することを目的とする。Therefore, an object of the present invention is to provide a method of easily manufacturing a semiconductor light emitting device having high brightness and improved light condensing characteristics.
【０００５】[0005]
【課題を解決するための手段】本発明による半導体発光
装置の製造方法は、絶縁性基板に形成された台部の主面
又は該主面に形成された凹部内に発光素子を載置する工
程と、基板収容部及び基板収容部から突出するレンズ形
成部を備えた成形型内に流動化した光透過性樹脂を注入
する工程と、成形型内に絶縁性基板の台部を配置し且つ
成形型の基板収容部の縁部を絶縁性基板の基板本体に当
接させることにより発光素子を成形型内に配置する工程
と、成形型内の光透過性樹脂を硬化させる工程とを含
む。A method of manufacturing a semiconductor light emitting device according to the present invention comprises a step of placing a light emitting element in a main surface of a base portion formed on an insulating substrate or in a recess formed in the main surface. And a step of injecting the fluidized light-transmissive resin into a molding die having a substrate housing portion and a lens forming portion protruding from the substrate housing portion, and arranging and molding the base portion of the insulating substrate in the molding die. The method includes the steps of placing the light emitting element in the molding die by bringing the edge of the substrate housing portion of the mold into contact with the substrate body of the insulating substrate, and the step of curing the light-transmissive resin in the molding die.
【０００６】本発明の他の実施例では、絶縁性基板に形
成された台部の主面又は該主面に形成された凹部内に発
光素子を載置した後、基板収容部及び基板収容部から突
出するレンズ形成部を備えた成形型内に絶縁性基板の台
部を配置し且つ成形型の基板収容部の縁部を絶縁性基板
の基板本体に当接させることにより発光素子を成形型内
に配置する工程と、成形型内に流動化した光透過性樹脂
を注入し且つこれを硬化さる工程とを含む。In another embodiment of the present invention, the light emitting element is mounted on the main surface of the base formed on the insulating substrate or in the recess formed in the main surface, and then the substrate housing portion and the substrate housing portion are placed. The light emitting element is formed by placing the base portion of the insulating substrate in the molding die having the lens forming portion protruding from the mold and bringing the edge of the substrate housing portion of the molding die into contact with the substrate body of the insulating substrate. And a step of injecting the fluidized light-transmissive resin into the molding die and curing the resin.
【０００７】[0007]
【作用】トランスファモールド成形型を使用せずに、安
価な注型成形により樹脂封止体を形成することができ
る。本発明の半導体発光装置の製造方法では、成形型に
対して絶縁性基板を正確且つ容易に位置決めすることが
できる。[Function] The resin sealing body can be formed by inexpensive cast molding without using the transfer mold. In the method for manufacturing a semiconductor light emitting device of the present invention, the insulating substrate can be accurately and easily positioned with respect to the molding die.
【０００８】[0008]
【実施例】以下、本発明の一実施例に係る発光ダイオー
ドの製造方法を図１〜図８について説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method of manufacturing a light emitting diode according to an embodiment of the present invention will be described below with reference to FIGS.
【０００９】図１に示す平面短冊状の絶縁性基板（1）
は基板本体（2）と、この主面に設けられ且つ基板本体
（2）より横幅の小さい台部（3）とを備える。絶縁性基
板（1）は成形性及び耐熱性に優れた高機能樹脂からな
り、周知の樹脂成形法によって基板本体（2）と台部
（3）とが一体に形成されている。A flat strip-shaped insulating substrate (1) shown in FIG.
Includes a substrate body (2) and a base portion (3) provided on the main surface and having a smaller width than the substrate body (2). The insulating substrate (1) is made of a high-performance resin having excellent moldability and heat resistance, and the substrate body (2) and the base portion (3) are integrally formed by a well-known resin molding method.
【００１０】台部（3）の一方の主面には、３０個程度
の凹部（4）が一定間隔離間して形成され、各凹部（4）
の底面（4a）と傾斜壁面（4b）には互いに電気的に離間
した一対の電極体（5）（6）が形成されている。電極体
（5）（6）は後述する発光ダイオードチップ（7）が放
射する波長領域の光に対して良好な反射特性を有する。
電極体（5）（6）は台部（3）の側面、基板本体（2）の
一方の主面及び側面を通って基板本体（2）の底面まで
達し、図４に示すように基板本体（2）の底面に形成さ
れた一対の接続用電極（8）（9）に接続されている。ま
た、台部（3）の両側面にはその長手方向に延伸する一
対の窪み部（3a）が設けられている。なお、窪み部（3
a）は、一つの凹部（4）に少なくとも一対の窪み部が対
応するように台部（3）の側面に間欠的に設けてもよ
い。On one main surface of the base (3), about 30 recesses (4) are formed at regular intervals, and each recess (4)
A pair of electrode bodies (5) (6) electrically separated from each other are formed on the bottom surface (4a) and the inclined wall surface (4b). The electrode bodies (5) and (6) have good reflection characteristics for light in the wavelength range emitted by the light emitting diode chip (7) described later.
The electrode bodies (5) and (6) reach the bottom surface of the substrate body (2) through the side surface of the pedestal portion (3), one main surface and the side surface of the substrate body (2), and as shown in FIG. It is connected to a pair of connection electrodes (8) and (9) formed on the bottom surface of (2). In addition, a pair of recesses (3a) extending in the longitudinal direction are provided on both side surfaces of the base (3). The recess (3
The a) may be intermittently provided on the side surface of the base part (3) so that at least a pair of recesses correspond to one recess (4).
【００１１】発光ダイオードを製造する際に、絶縁性基
板（1）の凹部（4）内の一方の電極体（5）上に発光ダ
イオードチップ（発光素子）（7）の下面電極を導電性
の接着剤で固着する。次に、リード細線（10）を介して
発光ダイオードチップ（7）の上面電極と他方の電極体
（6）とを電気的に接続する。これにより、絶縁性基板
（1）、発光ダイオードチップ（7）及びリード細線（1
0）から成る基板組立体が得られる。本実施例では短冊
状の平面形状を備えた絶縁性基板（1）の隣り合う凹部
（4）の間隔が、従来のリードフレームの隣り合う支持
板の間隔にほぼ等しく設定され、既存の自動機及び従来
の製造工程を利用して発光ダイオードチップ（7）の固
着工程及びリード細線（10）の接続工程を行うことがで
きる。When manufacturing a light emitting diode, the lower surface electrode of the light emitting diode chip (light emitting element) (7) is made of a conductive material on one electrode body (5) in the recess (4) of the insulating substrate (1). Stick with adhesive. Next, the upper surface electrode of the light emitting diode chip (7) and the other electrode body (6) are electrically connected via the thin lead wire (10). As a result, the insulating substrate (1), the light emitting diode chip (7), and the lead wire (1)
A substrate assembly consisting of 0) is obtained. In this embodiment, the distance between the adjacent concave portions (4) of the insulating substrate (1) having a strip-shaped planar shape is set to be almost equal to the distance between the adjacent support plates of the conventional lead frame, and the existing automatic machine is used. Also, the fixing process of the light emitting diode chip (7) and the connecting process of the lead thin wire (10) can be performed by utilizing the conventional manufacturing process.
【００１２】次に、前記基板組立体にレンズ状の光透過
性の樹脂封止体を形成するために、図２に示す透明な樹
脂から成るキャップ状の成形型であるキャップ型（11）
を用意する。キャップ型（11）は長手の樋形の基板収容
部（12）と基板収容部（12）から下方に突出するレンズ
形成部（13）とを備える。レンズ形成部（13）は、絶縁
性基板（1）に配置された凹部（4）と同数設けられてい
る。キャップ型（11）を用いて樹脂封止体を形成すると
き、図３に示すようにレンズ形成部（13）を下側に向け
てキャップ型（11）を配置し、キャップ型（11）内に流
動化した光透過性樹脂（14）を注入する。後にキャップ
型（11）内に配置される基板組立体の体積は予め測定で
きるので、キャップ型（11）内には所定量の光透過性樹
脂（14）が充填される。しかしながら、光透過性樹脂
（14）の硬化時の収縮を考慮して、キャップ型（11）内
に配置される基板組立体の体積よりやや多めの光透過性
樹脂（14）をキャップ型（11）内に充填して、キャップ
型（11）に設けた図示しない揚がり部に過剰量の光透過
性樹脂（14）を逃がすように構成してもよい。Next, a cap mold (11), which is a cap-shaped mold made of transparent resin shown in FIG. 2, for forming a lens-shaped light-transmitting resin encapsulant on the substrate assembly.
To prepare. The cap mold (11) is provided with a long gutter-shaped substrate accommodating portion (12) and a lens forming portion (13) protruding downward from the substrate accommodating portion (12). The lens forming portions (13) are provided in the same number as the concave portions (4) arranged in the insulating substrate (1). When the resin mold is formed using the cap mold (11), the cap mold (11) is arranged with the lens forming part (13) facing downward as shown in FIG. 3, and the inside of the cap mold (11) is arranged. The fluidized light-transmissive resin (14) is injected into. Since the volume of the substrate assembly to be placed later in the cap mold (11) can be measured in advance, the cap mold (11) is filled with a predetermined amount of the light transmissive resin (14). However, in consideration of shrinkage of the light-transmissive resin (14) during curing, the light-transmissive resin (14) slightly larger than the volume of the substrate assembly disposed in the cap mold (11) is used. ), And an excess amount of the light transmissive resin (14) is allowed to escape to a frying portion (not shown) provided in the cap mold (11).
【００１３】このため、レンズ形成部（13）と基底収容
部（12）は流動化した光透過性樹脂（14）が充填され
る。続いて、図３に示すように絶縁性基板（1）の凹部
（4）を下側にして、光透過性樹脂（14）内に侵入させ
ながら、絶縁性基板（1）の台部（3）をキャップ型（1
1）の基板収容部（12）内に配置する。このとき、絶縁
性基板（1）の全ての凹部（4）がそれぞれ１個のレンズ
形成部（13）に対向して位置決めされる。図３に示すよ
うに、絶縁性基板（1）の台部（3）の横幅は、キャップ
型（11）の基板収容部（12）の横幅よりも小さく、台部
（3）の側面と基板収容部（12）とは離間した状態で位
置決めされる。また、台部（3）の高さは、基板収容部
（12）の深さよりも小さいので、基板収容部（12）の縁
部（12a）が基板本体（2）の主面に当接し、台部（3）
の主面と基板収容部（12）の底面とは離間した状態に位
置決めされる。したがって、光透過性樹脂（14）は、レ
ンズ形成部（13）の全体、絶縁性基板（1)の凹部
（4）、上記の台部（3）と基板収容部（12）とが対向す
る領域、更に台部（3）に形成された窪み部（3a）も充
填される。Therefore, the lens forming portion (13) and the base accommodating portion (12) are filled with the fluidized light transmissive resin (14). Then, as shown in FIG. 3, with the recess (4) of the insulating substrate (1) facing downward, the recess (4) of the insulating substrate (1) is allowed to enter the transparent resin (14) while the base (3) of the insulating substrate (1) is inserted. ) Cap type (1
It is placed in the substrate housing section (12) of 1). At this time, all the concave portions (4) of the insulating substrate (1) are positioned so as to face the one lens forming portion (13). As shown in FIG. 3, the width of the base portion (3) of the insulating substrate (1) is smaller than the width of the substrate housing portion (12) of the cap type (11), and the side surface of the base portion (3) and the substrate It is positioned in a state of being separated from the accommodation section (12). Further, since the height of the pedestal portion (3) is smaller than the depth of the substrate housing portion (12), the edge portion (12a) of the substrate housing portion (12) contacts the main surface of the substrate body (2), Stand (3)
The main surface and the bottom surface of the substrate housing section (12) are positioned so as to be separated from each other. Therefore, in the light-transmissive resin (14), the entire lens forming portion (13), the concave portion (4) of the insulating substrate (1), the pedestal portion (3) and the substrate housing portion (12) face each other. The area, and also the recessed portion (3a) formed in the pedestal portion (3) are filled.
【００１４】光透過性樹脂（14）が硬化した後、絶縁性
基板（1）とキャップ型（11）のうち一方を固定し、図
３に示す矢印Ａ又はＢ方向に他方を移動して、キャップ
型（11）を絶縁性基板（1）から離型する。光透過性樹
脂（14）が固化して形成された樹脂封止体（15）は、台
部（3）の上面部に突出するレンズ形状（15a）と、台部
（3）の側面に形成された薄肉部（15b）とを有する。薄
肉部（15b）は台部（3）の窪み部（3a）に確実に係止さ
れる。発光ダイオードチップ（7）、リード細線（10）
及び電極体（5）（6）のうち台部（3）に配設された部
分が樹脂封止体（15）によって被覆される。最終的に、
図１の破線Ｃ−Ｄに相当する部分で樹脂封止体（15）と
絶縁性基板（1）を切断し、図４に示す個別化した発光
ダイオードを完成させる。After the light-transmitting resin (14) is cured, one of the insulating substrate (1) and the cap mold (11) is fixed, and the other is moved in the direction of arrow A or B shown in FIG. The cap mold (11) is released from the insulating substrate (1). The resin encapsulant (15) formed by solidifying the light-transmissive resin (14) is formed on the side surface of the base (3) and the lens shape (15a) protruding from the upper surface of the base (3). And a thinned portion (15b). The thin portion (15b) is securely locked in the recess (3a) of the base (3). Light-emitting diode chip (7), Lead wire (10)
Also, a portion of the electrode bodies (5) and (6) arranged in the base portion (3) is covered with the resin sealing body (15). Finally,
The resin encapsulant (15) and the insulating substrate (1) are cut at a portion corresponding to the broken line CD in FIG. 1 to complete the individualized light emitting diode shown in FIG.
【００１５】本実施例によれば以下の効果が得られる。According to this embodiment, the following effects can be obtained.
【００１６】（1） トランスファモールド型に比べて
十分に安価なキャップ型を使用して、注型法によってレ
ンズ状の樹脂封止体を形成できる。したがって、低コス
トで集光性の高い表面実装型発光ダイオードを安価で提
供できる。(1) A lens-shaped resin encapsulant can be formed by a casting method using a cap die that is sufficiently cheaper than the transfer mold die. Therefore, it is possible to provide a low-cost surface-mount light emitting diode having a high light-collecting property at a low cost.
【００１７】（2） 絶縁性基板（1）とキャップ型（1
1）との相対的な位置決めを容易に且つ正確に行える。(2) Insulating substrate (1) and cap type (1
Positioning relative to 1) can be done easily and accurately.
【００１８】（3） 絶縁性基板（1）の台部（3）に設
けられた窪み部（3a）に樹脂封止体（15）が嵌合するの
で、絶縁性基板（1）に対する樹脂封止体（15）の十分
大きな密着力（結合力）が得られる。(3) Since the resin encapsulant (15) fits into the recess (3a) provided in the base (3) of the insulating substrate (1), the resin sealing for the insulating substrate (1) is performed. A sufficiently large adhesion (coupling force) of the stopper (15) can be obtained.
【００１９】（4） 反射板となる電極体（5）（6）が
凹部（4）に設けられるので、発光ダイオードチップ
（7）の光を減衰することなく所定の方向に集光させ
て、大きな発光効率を得ることができる。(4) Since the electrode bodies (5) and (6) to be the reflectors are provided in the recesses (4), the light of the light emitting diode chip (7) is condensed in a predetermined direction without being attenuated, A large luminous efficiency can be obtained.
【００２０】（5） 金属製のリードフレームを用いる
場合に比べて、発光ダイオードチップ（7）を搭載する
凹部（4）の形状及びサイズ又は発光ダイオードの搭載
数及び配線パターンを樹脂成形により自由に設定でき
る。(5) Compared to the case of using a metal lead frame, the shape and size of the recess (4) for mounting the light emitting diode chip (7), or the number of mounted light emitting diodes and the wiring pattern can be freely formed by resin molding. Can be set.
【００２１】本発明の実施態様は前記の実施例に限定さ
れずに、更に変更が可能である。The embodiment of the present invention is not limited to the above embodiment, and can be modified.
【００２２】（1） 回路基板収容部（12）に連続して
更に幅広の第２の回路基板収容部をキャップ型（11）に
形成してもよい。この場合、絶縁性基板（1）の基板本
体（2）を第２の回路基板収容部に収容して、基板本体
（2）の上面、側面を樹脂封止体（15）で被覆できる。
なお、第１の回路基板収容部と第２の回路基板収容部の
間に形成された段部（基板収容部の縁部）を基板本体部
に当接させて、両者を位置決めする。(1) A wider second circuit board housing portion may be formed in the cap mold (11) in a continuous manner with the circuit board housing portion (12). In this case, the board body (2) of the insulating board (1) can be housed in the second circuit board housing portion, and the upper surface and the side surface of the board body (2) can be covered with the resin sealing body (15).
The step portion (the edge portion of the board housing portion) formed between the first circuit board housing portion and the second circuit board housing portion is brought into contact with the board body portion to position them.
【００２３】（2） 図５に示すように、間隙（3b）を
もって複数の台部（3）を互いに分離して絶縁性基板
（1）に設けても良い。この場合、図６に示すように隣
合う台部（3）の間に対応するように回路基板収容部（1
2）に仕切部（12b）を形成したキャップ型（11）を使用
できる。このとき、分離した台部（3）の全側面を樹脂
封止体（15）で被覆できる。又、基板本体（2）を切断
するだけで発光ダイオードを個別化できる。(2) As shown in FIG. 5, a plurality of pedestals (3) may be separated from each other with a gap (3b) and provided on the insulating substrate (1). In this case, as shown in FIG. 6, the circuit board accommodating portion (1
A cap mold (11) with a partition (12b) formed in 2) can be used. At this time, all the side surfaces of the separated base portion (3) can be covered with the resin sealing body (15). Further, the light emitting diode can be individualized only by cutting the substrate body (2).
【００２４】（3） 前記の実施例では平面短冊状の絶
縁性基板（1）を示したが、平面短冊状の複数の絶縁性
基板（1）を一体に形成した多列型の絶縁性基板として
も良い。(3) In the above embodiment, the flat strip-shaped insulating substrate (1) is shown, but a multi-row insulating substrate in which a plurality of flat strip-shaped insulating substrates (1) are integrally formed Also good.
【００２５】（4） 窪み部（3a）を設ける代わりに、
側面から突出する突起部を設けて、樹脂封止体（15）を
台部（3）に係止しても良い。また、図７及び図８に示
すように、窪み部（3a）を設ける代わりに、基板本体
（2）を貫通する孔（2a）又は基板本体（2）と台部
（3）とを貫通する孔（2b）を設けて、孔（2a）又は（2
b）内に樹脂封止体（15）を充填することにより、樹脂
封止体（15）を絶縁性基板（1）に対して固定してもよ
い。(4) Instead of providing the recess (3a),
A protrusion protruding from the side surface may be provided to lock the resin sealing body (15) on the base (3). Further, as shown in FIGS. 7 and 8, instead of providing the depression (3a), the hole (2a) penetrating the substrate body (2) or the substrate body (2) and the pedestal portion (3) are penetrated. The hole (2b) is provided and the hole (2a) or (2
The resin encapsulant (15) may be fixed to the insulating substrate (1) by filling the resin encapsulant (15) in b).
【００２６】（5） 絶縁性基板（1）と樹脂封止体（1
5）との密着性を向上するため、絶縁性基板（1）の表面
に表面処理剤を塗布するか、絶縁性基板（1）又は封止
用樹脂（14）を形成する樹脂材料に表面処理剤を添加し
ても良い。(5) Insulating substrate (1) and resin sealing body (1
5) To improve the adhesion with the surface of the insulating substrate (1), a surface treatment agent is applied to the surface of the insulating substrate (1) or the resin material forming the sealing resin (14). You may add an agent.
【００２７】（6） 絶縁性基板（1）とキャップ型（1
1）との位置決めを行った後に、キャップ型（11）に形
成した孔等から流動化した光透過性樹脂を注入しても良
い。(6) Insulating substrate (1) and cap type (1
After the positioning with 1) is performed, the fluidized light-transmissive resin may be injected through the holes or the like formed in the cap mold (11).
【００２８】（7） 回路基板収容部（12）の側面とレ
ンズ形成部（13）の側面を同一平面に配したキャップ型
（11）としても良い。(7) A cap type (11) may be used in which the side surface of the circuit board housing portion (12) and the side surface of the lens forming portion (13) are arranged on the same plane.
【００２９】（8） 樹脂封止体（15）は光軸に対して
対称な回転体とするのが望ましいがこれに限られない。(8) It is desirable that the resin sealing body (15) is a rotating body that is symmetrical with respect to the optical axis, but the invention is not limited to this.
【００３０】[0030]
【発明の効果】上記のように、本発明によれば高輝度化
及び改善された集光特性を備えた半導体発光装置を安価
且つ容易に製造できる方法が得られる。As described above, according to the present invention, it is possible to obtain a method for inexpensively and easily manufacturing a semiconductor light emitting device having high brightness and improved condensing characteristics.
【図１】本発明の半導体発光装置の製造方法に使用する
基板組立体の斜視図FIG. 1 is a perspective view of a substrate assembly used in a method for manufacturing a semiconductor light emitting device according to the present invention.
【図２】本発明の半導体発光装置の製造方法に使用する
キャップ型の斜視図FIG. 2 is a perspective view of a cap type used in the method for manufacturing a semiconductor light emitting device of the present invention.
【図３】基板組立体に組み合わされたキャップ型の図２
の３―３線に沿う断面図FIG. 3 is a view of a cap type combined with a substrate assembly.
Sectional view along line 3-3
【図４】本発明により製造された発光ダイオードの断面
図FIG. 4 is a cross-sectional view of a light emitting diode manufactured according to the present invention.
【図５】絶縁性基板の他の実施例を示す斜視図FIG. 5 is a perspective view showing another embodiment of the insulating substrate.
【図６】キャップ型の他の実施例を示す斜視図FIG. 6 is a perspective view showing another embodiment of the cap type.
【図７】絶縁性基板の別の実施例を示す断面図FIG. 7 is a sectional view showing another embodiment of the insulating substrate.
【図８】絶縁性基板の更に別の実施例を示す断面図FIG. 8 is a sectional view showing still another embodiment of the insulating substrate.
（1）・・絶縁性基板、（2）・・基板本体、（12a）・
・縁部、（3）・・台部、（7）・・発光ダイオードチッ
プ（発光素子）、（11）・・キャップ型（成形型）、
（12）・・基板収容部、（13）・・レンズ形成部、（1
4）・・光透過性樹脂、(1) ・ ・ Insulating substrate, (2) ・ ・ Substrate body, (12a) ・
・ Edge, (3) ・ ・ Base, (7) ・ ・ Light emitting diode chip (light emitting element), (11) ・ ・ Cap mold (molding mold),
(12) ··· Substrate housing, (13) · · Lens forming part, (1
4) ... Light-transmitting resin,
Claims (2)
該主面に形成された凹部内に発光素子を載置する工程
と、 基板収容部及び該基板収容部から突出するレンズ形成部
を備えた成形型内に流動化した光透過性樹脂を注入する
工程と、 前記成形型内に前記絶縁性基板の台部を配置し且つ前記
成形型の基板収容部の縁部を絶縁性基板の基板本体に当
接させることにより前記発光素子を前記成形型内に配置
する工程と、 前記成形型内の光透過性樹脂を硬化させる工程と、 を含むことを特徴とする半導体発光装置の製造方法。1. A step of placing a light emitting element in a main surface of a base portion formed in an insulating substrate or in a recess formed in the main surface, and a substrate housing portion and a lens formation protruding from the substrate housing portion. A step of injecting a fluidized light-transmissive resin into a molding die having a portion, arranging the base portion of the insulating substrate in the molding die, and insulating the edge portion of the substrate accommodating portion of the molding die. A semiconductor light-emitting device comprising: a step of placing the light-emitting element in the molding die by bringing it into contact with a substrate body of a substrate; and a step of curing a light-transmitting resin in the molding die. Production method.
該主面に形成された凹部内に発光素子を載置する工程
と、 基板収容部及び該基板収容部から突出するレンズ形成部
を備えた成形型内に前記絶縁性基板の台部を配置し且つ
前記成形型の基板収容部の縁部を絶縁性基板の基板本体
に当接させることにより前記発光素子を前記成形型内に
配置する工程と、 前記成形型内に流動化した光透過性樹脂を注入し且つこ
れを硬化さる工程と、を含むことを特徴とする半導体発
光装置の製造方法。2. A step of placing a light emitting element in a main surface of a base portion formed on an insulating substrate or a recess formed in the main surface, and a substrate housing portion and a lens projecting from the substrate housing portion. The base of the insulative substrate is placed in a mold having a portion, and the edge of the substrate housing portion of the mold is brought into contact with the substrate body of the insulative substrate so that the light emitting element is placed in the mold. And a step of injecting a fluidized light-transmitting resin into the molding die and curing the resin, the method for manufacturing a semiconductor light-emitting device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3211152A JPH0555636A (en) | 1991-08-22 | 1991-08-22 | Manufacture of light emitting semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3211152A JPH0555636A (en) | 1991-08-22 | 1991-08-22 | Manufacture of light emitting semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0555636A true JPH0555636A (en) | 1993-03-05 |
Family
ID=16601249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3211152A Pending JPH0555636A (en) | 1991-08-22 | 1991-08-22 | Manufacture of light emitting semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0555636A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10190066A (en) * | 1996-12-27 | 1998-07-21 | Nichia Chem Ind Ltd | Light emitting diode and led display using the same |
| JP2007505493A (en) * | 2003-09-09 | 2007-03-08 | クリー インコーポレイテッド | Solid metal block mounting substrate for semiconductor light emitting device and oxidation method for manufacturing the same |
| JP2007242792A (en) * | 2006-03-07 | 2007-09-20 | Avago Technologies Ecbu Ip (Singapore) Pte Ltd | Light emitting diode |
| JP2008235469A (en) * | 2007-03-19 | 2008-10-02 | Harison Toshiba Lighting Corp | Optical semiconductor device, and manufacturing method thereof |
| JP2008262990A (en) * | 2007-04-10 | 2008-10-30 | ▲がい▼笛森光電股▲ふん▼有限公司 | Enclosed structure of light emitting diode, and method of manufacturing the same |
| JP2009018559A (en) * | 2007-07-11 | 2009-01-29 | Yiguang Electronic Ind Co Ltd | Method and device for manufacturing lens for led device |
| JP2009088520A (en) * | 2007-09-27 | 2009-04-23 | Samsung Electro Mech Co Ltd | Method of manufacturing light-emitting diode package |
| JP2010504626A (en) * | 2006-09-20 | 2010-02-12 | 株式会社ニコン | Manufacturing method of optical element and resin-sealed light emitting element, and product obtained thereby |
| EP2190040A2 (en) * | 2008-11-25 | 2010-05-26 | VisEra Technologies Company Limited | Light-emitting diode device and method for fabricating the same |
| JP2010125647A (en) * | 2008-11-26 | 2010-06-10 | Towa Corp | Compression molding method of optical molded article and mold |
| JP2017028328A (en) * | 2009-09-17 | 2017-02-02 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | Method for manufacturing led module |
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-
1991
- 1991-08-22 JP JP3211152A patent/JPH0555636A/en active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10190066A (en) * | 1996-12-27 | 1998-07-21 | Nichia Chem Ind Ltd | Light emitting diode and led display using the same |
| JP2007505493A (en) * | 2003-09-09 | 2007-03-08 | クリー インコーポレイテッド | Solid metal block mounting substrate for semiconductor light emitting device and oxidation method for manufacturing the same |
| JP2007242792A (en) * | 2006-03-07 | 2007-09-20 | Avago Technologies Ecbu Ip (Singapore) Pte Ltd | Light emitting diode |
| JP2010504626A (en) * | 2006-09-20 | 2010-02-12 | 株式会社ニコン | Manufacturing method of optical element and resin-sealed light emitting element, and product obtained thereby |
| JP2008235469A (en) * | 2007-03-19 | 2008-10-02 | Harison Toshiba Lighting Corp | Optical semiconductor device, and manufacturing method thereof |
| JP2008262990A (en) * | 2007-04-10 | 2008-10-30 | ▲がい▼笛森光電股▲ふん▼有限公司 | Enclosed structure of light emitting diode, and method of manufacturing the same |
| JP2009018559A (en) * | 2007-07-11 | 2009-01-29 | Yiguang Electronic Ind Co Ltd | Method and device for manufacturing lens for led device |
| US8202746B2 (en) | 2007-09-27 | 2012-06-19 | Samsung Led Co., Ltd. | Method of manufacturing LED package for formation of molding member |
| JP2009088520A (en) * | 2007-09-27 | 2009-04-23 | Samsung Electro Mech Co Ltd | Method of manufacturing light-emitting diode package |
| EP2190040A2 (en) * | 2008-11-25 | 2010-05-26 | VisEra Technologies Company Limited | Light-emitting diode device and method for fabricating the same |
| JP2010130007A (en) * | 2008-11-25 | 2010-06-10 | Visera Technologies Co Ltd | Light-emitting diode device and method of manufacturing the same |
| EP2190040A3 (en) * | 2008-11-25 | 2014-02-26 | VisEra Technologies Company Limited | Light-emitting diode device and method for fabricating the same |
| JP2010125647A (en) * | 2008-11-26 | 2010-06-10 | Towa Corp | Compression molding method of optical molded article and mold |
| JP2017028328A (en) * | 2009-09-17 | 2017-02-02 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | Method for manufacturing led module |
| EP3545561A4 (en) * | 2017-08-25 | 2020-11-25 | Cree Huizhou Solid State Lighting Company Ltd. | Multiple led light source lens design in an integrated package |
| US11094852B2 (en) | 2017-08-25 | 2021-08-17 | Cree Huizhou Solid State Lighting Company Limited | Multiple LED light source lens design in an integrated package |
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