JPH0554708B2 - - Google Patents
Info
- Publication number
- JPH0554708B2 JPH0554708B2 JP21767285A JP21767285A JPH0554708B2 JP H0554708 B2 JPH0554708 B2 JP H0554708B2 JP 21767285 A JP21767285 A JP 21767285A JP 21767285 A JP21767285 A JP 21767285A JP H0554708 B2 JPH0554708 B2 JP H0554708B2
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- diaphragm
- strain gauge
- etching
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 claims description 101
- 239000004065 semiconductor Substances 0.000 claims description 86
- 239000000758 substrate Substances 0.000 claims description 83
- 230000001681 protective effect Effects 0.000 claims description 41
- 239000007788 liquid Substances 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 238000007789 sealing Methods 0.000 claims description 25
- 239000000243 solution Substances 0.000 claims description 20
- 239000012528 membrane Substances 0.000 claims description 18
- 238000012545 processing Methods 0.000 claims description 18
- 238000002347 injection Methods 0.000 claims description 16
- 239000007924 injection Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 238000001514 detection method Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 86
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 29
- 229910052710 silicon Inorganic materials 0.000 description 29
- 239000010703 silicon Substances 0.000 description 29
- 238000000034 method Methods 0.000 description 18
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 8
- 238000001259 photo etching Methods 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 238000009530 blood pressure measurement Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000036772 blood pressure Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21767285A JPS6276783A (ja) | 1985-09-30 | 1985-09-30 | 半導体圧力センサ及びその製造方法 |
| US06/911,245 US4766666A (en) | 1985-09-30 | 1986-09-24 | Semiconductor pressure sensor and method of manufacturing the same |
| US07/154,648 US4771638A (en) | 1985-09-30 | 1988-02-10 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21767285A JPS6276783A (ja) | 1985-09-30 | 1985-09-30 | 半導体圧力センサ及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6276783A JPS6276783A (ja) | 1987-04-08 |
| JPH0554708B2 true JPH0554708B2 (it) | 1993-08-13 |
Family
ID=16707910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21767285A Granted JPS6276783A (ja) | 1985-09-30 | 1985-09-30 | 半導体圧力センサ及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6276783A (it) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2634172B2 (ja) * | 1987-08-11 | 1997-07-23 | 株式会社東海理化電機製作所 | 圧力センサー |
| JP2696894B2 (ja) * | 1988-03-19 | 1998-01-14 | 株式会社デンソー | 半導体圧力センサ |
| EP1130631A1 (en) | 2000-02-29 | 2001-09-05 | STMicroelectronics S.r.l. | Process for forming a buried cavity in a semiconductor material wafer |
| US6739199B1 (en) * | 2003-03-10 | 2004-05-25 | Hewlett-Packard Development Company, L.P. | Substrate and method of forming substrate for MEMS device with strain gage |
| DE102004010295A1 (de) * | 2004-03-03 | 2005-09-22 | Robert Bosch Gmbh | Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren |
| JP5436404B2 (ja) * | 2010-12-17 | 2014-03-05 | 三菱電機株式会社 | 半導体圧力センサ及びその製造方法 |
| JP7268630B2 (ja) * | 2020-03-30 | 2023-05-08 | 三菱電機株式会社 | 半導体圧力センサ及びその製造方法 |
-
1985
- 1985-09-30 JP JP21767285A patent/JPS6276783A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6276783A (ja) | 1987-04-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3114570B2 (ja) | 静電容量型圧力センサ | |
| JP3444639B2 (ja) | 一体型圧力変換器の製造方法および装置 | |
| US8384170B2 (en) | Pressure sensor | |
| WO2017028466A1 (zh) | 一种mems应变计芯片及其制造工艺 | |
| US5589810A (en) | Semiconductor pressure sensor and related methodology with polysilicon diaphragm and single-crystal gage elements | |
| CN101960276B (zh) | 压力传感器及其制造方法 | |
| EP0742893B1 (en) | A capacitive pressure sensor having a reduced area dielectric spacer | |
| JP2000214035A (ja) | 静電容量型圧力センサおよびその製造方法 | |
| CN114235232B (zh) | 一种mems压力传感器及其制备方法 | |
| US5163329A (en) | Semiconductor pressure sensor | |
| JPH0554709B2 (it) | ||
| JPH0554708B2 (it) | ||
| CN112611501B (zh) | 一种谐振式差压传感器和补偿方法 | |
| KR20080098990A (ko) | 압력센서 제조방법 및 그 구조 | |
| JPH04178533A (ja) | 半導体圧力センサ | |
| CN114235236A (zh) | 一种降低输出漂移的mems压力传感器芯片的制作方法 | |
| JP2694593B2 (ja) | 半導体圧力センサ | |
| JPH06213751A (ja) | 半導体差圧センサ及びそれを用いた差圧伝送器 | |
| JPH03202740A (ja) | 半導体圧力センサの製造方法 | |
| JPH05126661A (ja) | 半導体圧力センサ | |
| JPH0758347A (ja) | 半導体圧力センサおよびその製造方法 | |
| CN117923411A (zh) | 一种碳化硅电容式压力传感器及其制备方法 | |
| JPH0821774A (ja) | 半導体圧力センサ及びその製造方法 | |
| JPH06213746A (ja) | 半導体圧力センサ | |
| JPH0510839A (ja) | 半導体圧力センサ |