JPH0554692B2 - - Google Patents
Info
- Publication number
- JPH0554692B2 JPH0554692B2 JP61113344A JP11334486A JPH0554692B2 JP H0554692 B2 JPH0554692 B2 JP H0554692B2 JP 61113344 A JP61113344 A JP 61113344A JP 11334486 A JP11334486 A JP 11334486A JP H0554692 B2 JPH0554692 B2 JP H0554692B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- gas
- silicon carbide
- microcrystalline silicon
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007789 gas Substances 0.000 claims description 34
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 25
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 13
- 239000002994 raw material Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 7
- 229910000077 silane Inorganic materials 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 150000001722 carbon compounds Chemical class 0.000 claims 1
- -1 silane compound Chemical class 0.000 claims 1
- 239000010408 film Substances 0.000 description 47
- 238000002347 injection Methods 0.000 description 13
- 239000007924 injection Substances 0.000 description 13
- 229910010271 silicon carbide Inorganic materials 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61113344A JPS62268128A (ja) | 1986-05-15 | 1986-05-15 | 微結晶炭化珪素膜の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61113344A JPS62268128A (ja) | 1986-05-15 | 1986-05-15 | 微結晶炭化珪素膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62268128A JPS62268128A (ja) | 1987-11-20 |
| JPH0554692B2 true JPH0554692B2 (fr) | 1993-08-13 |
Family
ID=14609865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61113344A Granted JPS62268128A (ja) | 1986-05-15 | 1986-05-15 | 微結晶炭化珪素膜の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62268128A (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2616929B2 (ja) * | 1987-08-22 | 1997-06-04 | 株式会社日本自動車部品総合研究所 | 微結晶炭化ケイ素半導体膜の製造方法 |
| JP2692091B2 (ja) * | 1987-10-31 | 1997-12-17 | 株式会社日本自動車部品総合研究所 | 炭化ケイ素半導体膜およびその製造方法 |
| JPH02185972A (ja) * | 1989-01-11 | 1990-07-20 | Kobe Steel Ltd | 炭化ケイ素膜の合成法 |
| US5796116A (en) | 1994-07-27 | 1998-08-18 | Sharp Kabushiki Kaisha | Thin-film semiconductor device including a semiconductor film with high field-effect mobility |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5795677A (en) * | 1980-12-03 | 1982-06-14 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon type photoelectric tranducer |
| JPS58190810A (ja) * | 1983-03-16 | 1983-11-07 | Yoshihiro Hamakawa | Ｐ型アモルフアスシリコンカ−バイドの製造方法 |
| JPS58194732A (ja) * | 1982-05-06 | 1983-11-12 | Konishiroku Photo Ind Co Ltd | アモルフアス炭化シリコン層の形成方法 |
-
1986
- 1986-05-15 JP JP61113344A patent/JPS62268128A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5795677A (en) * | 1980-12-03 | 1982-06-14 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon type photoelectric tranducer |
| JPS58194732A (ja) * | 1982-05-06 | 1983-11-12 | Konishiroku Photo Ind Co Ltd | アモルフアス炭化シリコン層の形成方法 |
| JPS58190810A (ja) * | 1983-03-16 | 1983-11-07 | Yoshihiro Hamakawa | Ｐ型アモルフアスシリコンカ−バイドの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62268128A (ja) | 1987-11-20 |
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