JPH055291B2 - - Google Patents
Info
- Publication number
- JPH055291B2 JPH055291B2 JP60011223A JP1122385A JPH055291B2 JP H055291 B2 JPH055291 B2 JP H055291B2 JP 60011223 A JP60011223 A JP 60011223A JP 1122385 A JP1122385 A JP 1122385A JP H055291 B2 JPH055291 B2 JP H055291B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- pyroelectric
- electrode
- lead extraction
- infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 claims description 17
- 238000000605 extraction Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60011223A JPS61170626A (ja) | 1985-01-24 | 1985-01-24 | 赤外線リニアアレイ素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60011223A JPS61170626A (ja) | 1985-01-24 | 1985-01-24 | 赤外線リニアアレイ素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61170626A JPS61170626A (ja) | 1986-08-01 |
| JPH055291B2 true JPH055291B2 (en, 2012) | 1993-01-22 |
Family
ID=11771959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60011223A Granted JPS61170626A (ja) | 1985-01-24 | 1985-01-24 | 赤外線リニアアレイ素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61170626A (en, 2012) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5450053A (en) * | 1985-09-30 | 1995-09-12 | Honeywell Inc. | Use of vanadium oxide in microbolometer sensors |
| US5300915A (en) * | 1986-07-16 | 1994-04-05 | Honeywell Inc. | Thermal sensor |
| US5286976A (en) * | 1988-11-07 | 1994-02-15 | Honeywell Inc. | Microstructure design for high IR sensitivity |
| JP2753905B2 (ja) * | 1991-09-24 | 1998-05-20 | 能美防災株式会社 | 焦電素子 |
| EP0558766B1 (en) * | 1991-09-24 | 1997-05-02 | Nohmi Bosai Ltd. | Pyroelectric element |
| DE69211153T2 (de) * | 1991-11-04 | 1996-12-05 | Honeywell Inc., Minneapolis, Minn. | Dunnfilmpyroelektrische bildmatrix |
-
1985
- 1985-01-24 JP JP60011223A patent/JPS61170626A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61170626A (ja) | 1986-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |