JPH055291B2 - - Google Patents
Info
- Publication number
- JPH055291B2 JPH055291B2 JP60011223A JP1122385A JPH055291B2 JP H055291 B2 JPH055291 B2 JP H055291B2 JP 60011223 A JP60011223 A JP 60011223A JP 1122385 A JP1122385 A JP 1122385A JP H055291 B2 JPH055291 B2 JP H055291B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- pyroelectric
- electrode
- lead extraction
- infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 claims description 17
- 238000000605 extraction Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
Description
【発明の詳細な説明】
産業上の利用分野
本発明は焦電体薄膜を用いた赤外線リニアアレ
イ素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an infrared linear array element using a pyroelectric thin film.
従来の技術
従来の焦電体薄膜を用いた赤外線センサでは、
第３図に示す様に、基板１上に形成した下地電極
２と焦電体膜３上に形成した、赤外吸収膜を兼ね
た受光電極４を用い、赤外光の照射による焦電体
膜３の表面に発生する電荷をリード引出し電極５
を介して電圧としてとり出す。（例えば、Seto
H.，他Ptoc.2nd Sensor Symposium，1982
PP.49〜53）このとき発生する電荷をＱ、電極
２，４間の容量をＣとすれば、出力電圧ＶはＶ＝
Ｑ／Ｃである。Conventional technology In the conventional infrared sensor using a pyroelectric thin film,
As shown in FIG. 3, a base electrode 2 formed on a substrate 1 and a light-receiving electrode 4 formed on a pyroelectric film 3, which also serves as an infrared absorbing film, are used to generate a pyroelectric material by irradiation with infrared light. The electric charge generated on the surface of the membrane 3 is transferred to an extraction electrode 5.
It is taken out as a voltage via . (For example, Seto
H., et al. Ptoc.2nd Sensor Symposium, 1982
PP.49~53) If the charge generated at this time is Q, and the capacitance between electrodes 2 and 4 is C, the output voltage V is V=
Q/C.
発明が解決しようとする問題点
この様な素子構成では焦電体膜３を介してリー
ド引き出し電極５と下地電極２とが重なる部分
で、浮遊容量C′が発生し、出力電圧V′＝Ｑ／Ｃ＋C′
となり、出力電圧の低下が生ずる。Problems to be Solved by the Invention In such an element configuration, a stray capacitance C' is generated at the portion where the lead extraction electrode 5 and the base electrode 2 overlap via the pyroelectric film 3, and the output voltage V'=Q /C+C', and the output voltage decreases.
また、リード引き出し電極５は通常白金あるい
はアルミニウムといつた赤外光を反射する材料で
形成するので原理的にはリード引き出し電極部か
らは出力が出ないが、強い赤外光が照射された場
合、リード引き出し電極の近傍の焦電体で吸収さ
れた熱がまわり込んで、リード引き出し電極部か
らも信号が出力される。これは、２次元の画像に
した場合、画像のボケとなつて表われるので、大
きな欠点である。 In addition, since the lead extraction electrode 5 is usually made of a material that reflects infrared light, such as platinum or aluminum, in principle no output is output from the lead extraction electrode part, but if strong infrared light is irradiated. , the heat absorbed by the pyroelectric body near the lead extraction electrode circulates, and a signal is also output from the lead extraction electrode section. This is a major drawback since it appears as a blur in a two-dimensional image.
問題点を解決するための手段
リード引き出し電極と焦電体薄膜との間に焦電
体薄膜の材料より誘電率の低い材料よりなる薄膜
を介在させる。Means for Solving the Problems A thin film made of a material having a lower dielectric constant than the material of the pyroelectric thin film is interposed between the lead extraction electrode and the pyroelectric thin film.
作 用
本発明は上記の構成により、リード引き出し電
極と下地電極間に生ずる浮遊容量を減少させ、焦
電体の出力をより大きな電圧でとり出せる。ま
た、焦電体材料とリード引き出し電流が電気的に
絶縁されるので、受光電極部の信号のみにとり出
すことができる。Effects With the above configuration, the present invention reduces the stray capacitance generated between the lead extraction electrode and the base electrode, and allows the output of the pyroelectric body to be extracted at a larger voltage. Furthermore, since the pyroelectric material and the lead extraction current are electrically insulated, only the signal from the light receiving electrode can be extracted.
実施例
第１図及び第２図は本発明の実施例において作
製された赤外線リニアアレイ素子の断面及び平面
図である。１００でへき開し鏡面研摩を施した
MgO単結晶からなる基板７（10×10×0.3mm3）上
に高周波マグネトロンスパツタ装置を用い厚さ約
0.2μｍの白金下地電極８を形成した。次に、高純
度PbTiO3粉末に20mol％のPbO粉末を加えたも
のをターゲツトに用い、高周波マグネトロンスパ
ツタ装置で厚さ約4μｍのPbTiO3からなる焦電体
薄膜９を成長させた。焦電体薄膜９上に受光部分
を残し、Al金属をターゲツトに用い、Al2O3誘電
体薄膜（厚さ約1.5μｍ）１０をスパツタリングに
より形成した。次いで、NiCr受光電極１１（0.1
×0.1mm2）をリニアアレイ状に蒸着し、白金リー
ド引き出し電極１２をスパツタリングにより作成
した。比較のために、第２図に示す誘電体薄膜を
持たない構成の素子を同様の手順で作製した。い
ずれの素子も受光部分の下の基板７をエツチング
によりとり除いてある。Embodiment FIGS. 1 and 2 are a cross-sectional and plan view of an infrared linear array element manufactured in an embodiment of the present invention. Cleaved with 100 and mirror polished
Using a high frequency magnetron sputtering device, a substrate 7 (10 x 10 x 0.3 mm 3 ) made of MgO single crystal was coated with a thickness of approx.
A 0.2 μm platinum base electrode 8 was formed. Next, a pyroelectric thin film 9 made of PbTiO 3 with a thickness of about 4 μm was grown using a high-frequency magnetron sputtering device using a mixture of high-purity PbTiO 3 powder and 20 mol % PbO powder as a target. A light-receiving portion was left on the pyroelectric thin film 9, and an Al 2 O 3 dielectric thin film (about 1.5 μm thick) 10 was formed by sputtering using Al metal as a target. Next, a NiCr light-receiving electrode 11 (0.1
×0.1 mm 2 ) was deposited in a linear array, and platinum lead extraction electrodes 12 were created by sputtering. For comparison, an element having a structure without a dielectric thin film shown in FIG. 2 was fabricated using the same procedure. In each element, the substrate 7 below the light-receiving portion is removed by etching.
この素子に温度500Kの黒体炉からの赤外光を
10Hzの周波数でチヨツプし照射した。出力は高入
力インピーダンスの増巾系（60dB）を通し、ス
ペクトラムアナライザで測定した。その結果、誘
電体層１０を持たない素子では出力は、500ｍＶ
であつたのに対し、本発明による誘電体層１０を
リード引出電極１２の下に設けた息子では、800
ｍＶの出力が得られ1.6倍の出力の増加が見られ
た。 Infrared light from a blackbody furnace at a temperature of 500K is applied to this element.
Irradiation was performed by chopping at a frequency of 10Hz. The output was passed through a high input impedance amplification system (60 dB) and measured with a spectrum analyzer. As a result, the output of the device without the dielectric layer 10 is 500 mV.
On the other hand, in the son in which the dielectric layer 10 according to the present invention was provided under the lead extraction electrode 12, the temperature was 800.
An output of mV was obtained, and an increase in output of 1.6 times was observed.
同様の構成で、誘電層にSiO2（厚さ約1.5μｍ）
を用いたものでは、850ｍＶの出力が得られ、こ
の場合にも、誘電体層が有効に作用していること
がわかつた。 Similar configuration with SiO 2 (approximately 1.5 μm thick) in the dielectric layer.
An output of 850 mV was obtained using the dielectric layer, indicating that the dielectric layer was effective in this case as well.
次いで、リニアセンサを用いた赤外線の二次元
画像装置を試作し、空間分解能の比較を行なつ
た。温度200℃に加熱した表面に黒色塗装を施し
た銅パイプ（φ10mm）を被写体にし、従来例によ
るセンサと本発明によるセンサの比較を行なつ
た。本発明によるリニアアレイセンサを用いた場
合、実際の被写体に対応する画像が得られたのに
対し、従来例のものでは、輪かくが実際の３倍程
度に広がつてしまい十分な空間分解能が得られな
かつた。 Next, we prototyped an infrared two-dimensional imaging device using a linear sensor and compared its spatial resolution. A conventional sensor and a sensor according to the present invention were compared using a copper pipe (φ10 mm) whose surface was heated to 200°C and painted black as the subject. When using the linear array sensor according to the present invention, an image corresponding to the actual subject was obtained, whereas with the conventional example, the ring spread out to about three times the actual size and did not have sufficient spatial resolution. I couldn't get it.
発明の効果
以上述べて来た様に、本発明によれば、極めて
簡易な構成で、安定に高感度、高分解能の赤外線
リニアアレイ素子を提供でき、実用的に極めて有
用である。Effects of the Invention As described above, according to the present invention, it is possible to provide an infrared linear array element that stably has high sensitivity and high resolution with an extremely simple configuration, and is extremely useful in practice.
第１図は本発明の一実施例における赤外線リニ
アアレイ素子の断面図、第２図は同赤外線リニア
アレイ素子の平面図、第３図は従来例を示す焦電
形赤外線検出素子の断面図である。
７……基板、８……下地電極、９……焦電体薄
膜、１０……誘電体薄膜、１１……受光電極、１
２……リード引き出し電極。
Fig. 1 is a cross-sectional view of an infrared linear array element according to an embodiment of the present invention, Fig. 2 is a plan view of the same infrared linear array element, and Fig. 3 is a cross-sectional view of a pyroelectric infrared detecting element showing a conventional example. be. 7... Substrate, 8... Base electrode, 9... Pyroelectric thin film, 10... Dielectric thin film, 11... Light receiving electrode, 1
2...Lead extraction electrode.
Claims (1)
下地電極上に形成した焦電体薄膜と、この焦電体
薄膜上に形成された受光電極と、前記受光電極か
らのリード引き出し電極とを備え、前記リード引
き出し電極と焦電体材料との間に前記焦電体薄膜
の材料より誘電率の低い誘電体薄膜を介在させた
事を特徴とする赤外線リニアアレイ素子。1. A thin film base electrode formed on a substrate, a pyroelectric thin film formed on this thin film base electrode, a light receiving electrode formed on this pyroelectric thin film, and a lead extraction electrode from the light receiving electrode. . An infrared linear array element, characterized in that a dielectric thin film having a dielectric constant lower than that of the material of the pyroelectric thin film is interposed between the lead extraction electrode and the pyroelectric material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60011223A JPS61170626A (en) | 1985-01-24 | 1985-01-24 | Infrared linear array element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60011223A JPS61170626A (en) | 1985-01-24 | 1985-01-24 | Infrared linear array element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61170626A JPS61170626A (en) | 1986-08-01 |
| JPH055291B2 true JPH055291B2 (en) | 1993-01-22 |
Family
ID=11771959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60011223A Granted JPS61170626A (en) | 1985-01-24 | 1985-01-24 | Infrared linear array element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61170626A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5450053A (en) * | 1985-09-30 | 1995-09-12 | Honeywell Inc. | Use of vanadium oxide in microbolometer sensors |
| US5300915A (en) * | 1986-07-16 | 1994-04-05 | Honeywell Inc. | Thermal sensor |
| US5286976A (en) * | 1988-11-07 | 1994-02-15 | Honeywell Inc. | Microstructure design for high IR sensitivity |
| JP2753905B2 (en) * | 1991-09-24 | 1998-05-20 | 能美防災株式会社 | Pyroelectric element |
| US5420426A (en) * | 1991-09-24 | 1995-05-30 | Nohmi Boasai Ltd. | Pyroelectric device |
| EP0611443B1 (en) * | 1991-11-04 | 1996-05-29 | Honeywell Inc. | Thin film pyroelectric imaging array |
-
1985
- 1985-01-24 JP JP60011223A patent/JPS61170626A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61170626A (en) | 1986-08-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |