JPH0552667B2 - - Google Patents
Info
- Publication number
- JPH0552667B2 JPH0552667B2 JP60026968A JP2696885A JPH0552667B2 JP H0552667 B2 JPH0552667 B2 JP H0552667B2 JP 60026968 A JP60026968 A JP 60026968A JP 2696885 A JP2696885 A JP 2696885A JP H0552667 B2 JPH0552667 B2 JP H0552667B2
- Authority
- JP
- Japan
- Prior art keywords
- high frequency
- coaxial line
- chip
- transistor
- characteristic impedance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004020 conductor Substances 0.000 claims description 12
- 239000000523 sample Substances 0.000 claims description 10
- 238000011156 evaluation Methods 0.000 claims description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明はVHF、UHF帯の高周波小信号又は大
信号トランジスタの高周波特性の半導体評価装置
に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a semiconductor evaluation device for high frequency characteristics of high frequency small signal or large signal transistors in VHF and UHF bands.
従来の技術
従来、この種の評価装置は、トランジスタを完
成品にした状態で使用され、第２図ａ、第２図
ｂ、第２図ｃのような構成であつた。第２図ａは
Ｓパラメータ測定ブロツク図、第２図ｂは入出力
インピーダンス、パワーゲイン測定ブロツク図、
第２図ｃはノイズ測定ブロツク図であつた。第２
図ａ，ｂ，ｃにおいて１はＳパラメータ測定装
置、２はトランジスタフイクスチヤー、３は試供
トランジスタ、４は信号発生器、５は方向性結合
器、６はスタブチユーナ、７はトランジスタ整合
回路、８はスペクトラムアナライザー、９はパワ
ーメータ、１０はDC電源、１１はノイズ測定器、
１２はノイズソース、１３はバンドパスフイルタ
ー、１４はミキサーであつた。BACKGROUND ART Conventionally, this type of evaluation device has been used with a transistor as a completed product, and has a configuration as shown in FIG. 2a, FIG. 2b, and FIG. 2c. Figure 2a is an S-parameter measurement block diagram, Figure 2b is an input/output impedance and power gain measurement block diagram,
FIG. 2c is a noise measurement block diagram. Second
In figures a, b, and c, 1 is an S-parameter measuring device, 2 is a transistor fixture, 3 is a sample transistor, 4 is a signal generator, 5 is a directional coupler, 6 is a stub tuner, 7 is a transistor matching circuit, 8 is a spectrum analyzer, 9 is a power meter, 10 is a DC power supply, 11 is a noise measuring device,
12 was a noise source, 13 was a band pass filter, and 14 was a mixer.
発明が解決しようとする問題点
このような従来の構成では、高周波トランジス
タのチツプ状態での高周波特性を測定評価するこ
とができず、チツプを直接組立てるような混成集
積回路では、特性不良がロツトで集中したりして
製造歩留の著しい低下を引き起こすという問題が
あつた。本発明はこのような問題点を解決するも
ので、高周波トランジスタの高周波諸特性をチツ
プ状態で測定評価することを目的とするものであ
る。Problems to be Solved by the Invention With such a conventional configuration, it is not possible to measure and evaluate the high frequency characteristics of high frequency transistors in the chip state, and in hybrid integrated circuits in which chips are directly assembled, characteristic defects occur in lots. There was a problem that the manufacturing yield was significantly reduced due to concentration of the metal. The present invention is intended to solve these problems, and aims to measure and evaluate various high-frequency characteristics of a high-frequency transistor in a chip state.
問題点を解決するための手段
この問題点を解決するために、本発明は、チツ
プ状態の高周波トランジスタの高周波諸特性を評
価するために、先端部に特性インピーダンスが
50Ωの第１の固定同軸線の中心導体を接触端子と
し、前記第１の固定同軸線の前記先端部とは反対
側に特性インピーダンスが50Ωの可動同軸線を結
合した高プローブを準備し、チツプに直接、この
プローブをあてるとともに前記高周波周波トラン
ジスタのチツプが置かれた台座がインピーダンス
変換部を介して特性インピーダンスが50Ωの第２
の固定同軸線に接続された構造のものである。Means for Solving the Problem In order to solve this problem, the present invention provides a structure in which a characteristic impedance is provided at the tip in order to evaluate various high frequency characteristics of a high frequency transistor in a chip state.
A high probe is prepared in which the center conductor of a 50Ω first fixed coaxial line is used as a contact terminal, and a movable coaxial line with a characteristic impedance of 50Ω is coupled to the opposite side of the first fixed coaxial line from the tip. The probe is applied directly to the pedestal on which the high frequency transistor chip is placed, and the pedestal with the characteristic impedance of 50Ω is
The structure is connected to a fixed coaxial line.
作 用
この構成により、高周波トランジスタの高周波
諸特性をチツプ状態のままで精度良く測定評価で
きる装置を提供することが可能となる。Effect: With this configuration, it is possible to provide an apparatus that can accurately measure and evaluate various high-frequency characteristics of a high-frequency transistor in its chip state.
実施例
第１図は本発明の一実施例による高周波特性評
価装置の高周波プローブの構成図であり、第１図
において、１０１は試供チツプ、１０２は銅等の
中芯導体、１０３は同軸絶縁樹脂、１０４は銅等
の外部導体、１０５は銅板等の外部固定導体、１
０６は銅の撚線等の中心可動導体、１０７は銅の
撚線等の外部可動導体、１０８は50Ω固定ミニケ
ーブル部、１０９は50Ω可動ミニケーブル部、１
１０は水平度保持金具、１１１はチツプ台座、１
１２はインピーダンス変換部である。Embodiment FIG. 1 is a configuration diagram of a high-frequency probe of a high-frequency characteristic evaluation device according to an embodiment of the present invention. In FIG. 1, 101 is a sample chip, 102 is a central conductor such as copper, and 103 is a coaxial insulating resin. , 104 is an external conductor such as copper, 105 is an external fixed conductor such as a copper plate, 1
06 is a central movable conductor such as copper stranded wire, 107 is an external movable conductor such as copper stranded wire, 108 is a 50Ω fixed mini cable section, 109 is a 50Ω movable mini cable section, 1
10 is a horizontality holding metal fitting, 111 is a chip pedestal, 1
12 is an impedance conversion section.
第１図の高周波プローブを第２図の試供トラン
ジスタ３の代りにチツプ上のトランジスタに接続
し、整合をとるか、あるいは基準面を合わせるか
して測定すれば、チツプ状態の高周波特性が精度
良く評価できた。 By connecting the high-frequency probe shown in Figure 1 to the transistor on the chip instead of the sample transistor 3 shown in Figure 2, and making measurements by matching or aligning the reference planes, the high-frequency characteristics of the chip state can be accurately determined. I was able to evaluate it.
発明の効果
以上のように本発明によれば、高周波トランジ
スタの高周波諸特性、すなわち、Ｓパラメータ、
入出力インピーダンス、パワーゲイン、ノイズ等
をチツプ状態のままで評価でき、チツプ状態で良
品不良品判定をしておくことにより、チツプを直
接組立てる混成集積回路の特性良品歩留を飛躍的
に向上させるという効果が得られる。Effects of the Invention As described above, according to the present invention, various high frequency characteristics of a high frequency transistor, that is, S parameters,
Input/output impedance, power gain, noise, etc. can be evaluated in the chip state, and by determining good products and defective products in the chip state, the yield of non-defective products of hybrid integrated circuits that are assembled directly from the chip can be dramatically improved. This effect can be obtained.
第１図は本発明の一実施例による半導体評価装
置の高周波プローブの断面図、第２図ａ，ｂ，ｃ
は従来の高周波トランジスタ完成品の評価装置の
ブロツク図である。
１０１……試供チツプ、１０２……中芯導体、
１０３……絶縁樹脂、１０４……外部導体、１０
５……外部固定導体、１０６……中心可動導体、
１０７……外部可動導体、１０８……50Ω固定ミ
ニケーブル部、１０９……50Ω可動ミニケーブル
部、１１０……水平度保持金具、１１１……チツ
プ台座、１１２……インピーダンス変換部。
FIG. 1 is a cross-sectional view of a high-frequency probe of a semiconductor evaluation device according to an embodiment of the present invention, and FIG. 2 a, b, c
1 is a block diagram of a conventional evaluation device for finished high-frequency transistor products. 101...sample chip, 102...core conductor,
103... Insulating resin, 104... Outer conductor, 10
5... External fixed conductor, 106... Center movable conductor,
107...External movable conductor, 108...50Ω fixed mini-cable section, 109...50Ω movable mini-cable section, 110...Horizontality holding fitting, 111... Chip pedestal, 112... Impedance conversion section.
Claims (1)
諸特性を測定するために、先端部に特性インピー
ダンスが50Ωの第１の固定同軸線の中心導体を接
触端子とし、前記第１の固定同軸線の前記先端部
とは反対側に特性インピーダンスが50Ωの可動同
軸線を結合した高周波プローブをそなえるととも
に、前記高周波トランジスタのチツプが置かれた
台座が、インピーダンス変換部を介して特性イン
ピーダンスが50Ωの第２の固定同軸線に接続され
たことを特徴とする半導体評価装置。1. In order to measure various high frequency characteristics of a high frequency transistor in a chip state, the center conductor of a first fixed coaxial line having a characteristic impedance of 50Ω at the tip is used as a contact terminal, and the tip of the first fixed coaxial line is A high frequency probe coupled with a movable coaxial line having a characteristic impedance of 50Ω is provided on the opposite side, and the pedestal on which the high frequency transistor chip is placed is connected to a second fixed coaxial line having a characteristic impedance of 50Ω via an impedance converter. A semiconductor evaluation device characterized in that it is connected to a wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2696885A JPS61187244A (en) | 1985-02-14 | 1985-02-14 | Equipment for estimating semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2696885A JPS61187244A (en) | 1985-02-14 | 1985-02-14 | Equipment for estimating semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61187244A JPS61187244A (en) | 1986-08-20 |
| JPH0552667B2 true JPH0552667B2 (en) | 1993-08-06 |
Family
ID=12207955
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2696885A Granted JPS61187244A (en) | 1985-02-14 | 1985-02-14 | Equipment for estimating semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61187244A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6367884U (en) * | 1986-06-20 | 1988-05-07 | ||
| JPH0652748B2 (en) * | 1987-05-12 | 1994-07-06 | 東京エレクトロン株式会社 | Probe card |
| JP2944677B2 (en) * | 1989-03-03 | 1999-09-06 | 日本発条株式会社 | Conductive contact |
| JP2000121666A (en) * | 1998-10-15 | 2000-04-28 | Micronics Japan Co Ltd | Probe and probe card |
| JP3944196B2 (en) * | 2004-06-28 | 2007-07-11 | 日本電産リード株式会社 | Probe device and substrate inspection device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50150375A (en) * | 1974-05-21 | 1975-12-02 | ||
| JPS5124851U (en) * | 1974-08-12 | 1976-02-24 | ||
| JPS5941314A (en) * | 1982-08-31 | 1984-03-07 | Mitsui Petrochem Ind Ltd | Modified 4-methyl-1-pentene polymer |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5997469U (en) * | 1982-12-20 | 1984-07-02 | 株式会社東芝 | Semiconductor chip measurement probe |
-
1985
- 1985-02-14 JP JP2696885A patent/JPS61187244A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50150375A (en) * | 1974-05-21 | 1975-12-02 | ||
| JPS5124851U (en) * | 1974-08-12 | 1976-02-24 | ||
| JPS5941314A (en) * | 1982-08-31 | 1984-03-07 | Mitsui Petrochem Ind Ltd | Modified 4-methyl-1-pentene polymer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61187244A (en) | 1986-08-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |