JPH0548057A - Solid-state image sensor - Google Patents
Solid-state image sensorInfo
- Publication number
- JPH0548057A JPH0548057A JP3200487A JP20048791A JPH0548057A JP H0548057 A JPH0548057 A JP H0548057A JP 3200487 A JP3200487 A JP 3200487A JP 20048791 A JP20048791 A JP 20048791A JP H0548057 A JPH0548057 A JP H0548057A
- Authority
- JP
- Japan
- Prior art keywords
- micro
- lenses
- gap
- light
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、固体撮像装置に関し、
特に、受光部上にマイクロ集光レンズを形成した固体撮
像装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device,
In particular, the present invention relates to a solid-state imaging device in which a micro condenser lens is formed on a light receiving section.
【０００２】[0002]
【従来の技術】固体撮像装置、例えばＣＣＤ固体撮像装
置は、そのＣＣＤにおける信号電荷及び雑音と像面照度
との関係をみた場合、低照度側において、信号電荷のゆ
らぎによる雑音（ショット雑音）と暗時雑音の影響が大
きくなるということが知られている。2. Description of the Related Art In a solid-state image pickup device, for example, a CCD solid-state image pickup device, when looking at the relationship between signal charge and noise in the CCD and image plane illuminance, noise (shot noise) due to fluctuations in the signal charge appears on the low illuminance side. It is known that the effect of dark noise increases.
【０００３】上記ショット雑音を減らすには、受光部の
開口率を大きくすれば良いが、最近の微細化傾向に伴
い、上記開口率の増大化には限界がある。そこで、現
在、受光部上にマイクロ集光レンズを形成した構造が提
案されている。このマイクロ集光レンズを形成した構造
の場合、光の利用率が上がり、受光部における感度の向
上を図ることができ、上記ショット雑音の低減化に有効
となる（尚、マイクロ集光レンズの形成方法について
は、例えば特開昭６０−５３０７３号公報及び特開平１
−１０６６６号公報参照）。In order to reduce the shot noise, the aperture ratio of the light receiving portion may be increased, but there is a limit to the increase of the aperture ratio due to the recent trend of miniaturization. Therefore, a structure in which a micro condenser lens is formed on the light receiving portion is currently proposed. In the case of the structure in which the micro condensing lens is formed, the utilization factor of light is increased, the sensitivity in the light receiving portion can be improved, and it is effective in reducing the shot noise (note that the formation of the micro condensing lens is performed. Regarding the method, for example, JP-A-60-53073 and JP-A-1
-10666 publication).
【０００４】従来のＣＣＤ固体撮像装置は、図２に示す
ように、シリコン基板１１の表面に、イメージエリアを
構成する多数の受光部１２が形成され、これら受光部１
２を含む全面に平坦化膜１３が形成され、更に、該平坦
化膜１３上に、例えば赤、緑及び青のカラーフィルタ１
４Ｒ、１４Ｇおよび１４Ｂが夫々対応する受光部１２上
に形成され、そして、このカラーフィルタ１４Ｒ、１４
Ｇおよび１４Ｂ上において、各受光部１２に対応した位
置にマイクロ集光レンズ１５が形成されて構成されてい
る。尚、図において、１６は転送電極及び遮光膜の形成
による段差を模式的に示すものである。As shown in FIG. 2, the conventional CCD solid-state image pickup device has a large number of light receiving portions 12 forming an image area formed on the surface of a silicon substrate 11.
2, a flattening film 13 is formed on the entire surface, and the red, green, and blue color filters 1 are further formed on the flattening film 13.
4R, 14G and 14B are respectively formed on the corresponding light receiving parts 12, and the color filters 14R, 14B
On G and 14B, the micro condenser lens 15 is formed at a position corresponding to each light receiving portion 12. In the figure, reference numeral 16 schematically shows a step due to the formation of the transfer electrode and the light shielding film.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、従来の
固体撮像装置においては、受光部１２上に１層のマイク
ロ集光レンズ１５を形成して構成しているため、そのマ
イクロ集光レンズ１５の形成上、どうしてもマイクロ集
光レンズ１５間にギャップｇができてしまうという問題
があった。即ち、マイクロ集光レンズ１５間にギャップ
ｇが形成されると、このギャップｇの部分に入射した光
Ｌｇは、集光されずにそのままカラーフィルタ（図示の
例では１４Ｒ）を通って、遮光膜が存する段差１６に入
射することになり、受光部１２へは到達しない。However, in the conventional solid-state image pickup device, since the micro-condensing lens 15 of one layer is formed on the light receiving portion 12, the micro-condensing lens 15 is formed. In addition, there is a problem that a gap g is inevitably formed between the micro condenser lenses 15. That is, when the gap g is formed between the micro condenser lenses 15, the light Lg incident on the portion of the gap g is not condensed but directly passes through the color filter (14R in the illustrated example) and the light shielding film. The incident light is incident on the existing step 16 and does not reach the light receiving portion 12.
【０００６】このように、従来の固体撮像装置において
は、ギャップｇ以外のレンズ面に入射する光Ｌのみしか
受光部１２に入射させることができず、イメージエリア
全体に入射する光を有効利用することができない。従っ
て、マイクロ集光レンズ１５を形成したことによる感度
の向上には、限界があるという不都合があった。As described above, in the conventional solid-state image pickup device, only the light L incident on the lens surface other than the gap g can be incident on the light receiving portion 12, and the light incident on the entire image area is effectively used. I can't. Therefore, there is a problem that the improvement of the sensitivity due to the formation of the micro condenser lens 15 is limited.
【０００７】ここで、集光レンズの繰り返しピッチＰを
８μｍ、マイクロ集光レンズ１５間のギャップ幅ｄを
１．５μｍとすると、集光最大幅は８−１．５＝６．５
μｍ、最大感度の向上率は６．５／３＝２．２倍であ
る。尚、図において、マイクロ集光レンズ１５は、スト
ライプ形状で、断面方向からの集光しか考えないものと
する。Here, assuming that the repeating pitch P of the condenser lenses is 8 μm and the gap width d between the micro condenser lenses 15 is 1.5 μm, the maximum condenser width is 8-1.5 = 6.5.
The improvement rate of μm and maximum sensitivity is 6.5 / 3 = 2.2 times. In the figure, the micro condenser lens 15 has a stripe shape, and only condenses light from the cross-sectional direction.
【０００８】本発明は、このような課題に鑑み成された
もので、その目的とするところは、マイクロ集光レンズ
間のギャップをなくすことができ、イメージエリア全体
に入射する光を有効利用することができる固体撮像装置
を提供することにある。The present invention has been made in view of the above problems, and an object thereof is to eliminate the gap between the micro condenser lenses and effectively utilize the light incident on the entire image area. An object of the present invention is to provide a solid-state imaging device capable of performing the above.
【０００９】[0009]
【課題を解決するための手段】本発明は、受光部２上に
集光レンズが形成された固体撮像装置において、集光レ
ンズを、夫々屈折率の異なる第１及び第２の集光レンズ
５及び７にて構成し、第２の集光レンズ７で第１の集光
レンズ５のギャップｇを埋めるように形成して構成す
る。According to the present invention, in a solid-state image pickup device in which a condenser lens is formed on a light receiving portion 2, the condenser lens includes a first condenser lens 5 and a second condenser lens 5 having different refractive indexes. And 7, and the second condensing lens 7 is formed so as to fill the gap g of the first condensing lens 5.
【００１０】この場合、上記第１及び第２の集光レンズ
５及び７の各屈折率を夫々ｎ1 及びｎ2 としたとき、ｎ
1 ＞ｎ2 ＞１の関係にする。In this case, when the respective refractive indices of the first and second condenser lenses 5 and 7 are n 1 and n 2 , respectively, n
The relationship is 1 > n 2 > 1.
【００１１】[0011]
【作用】上述の本発明の構成によれば、受光部２上に形
成される集光レンズを、夫々屈折率の異なる第１及び第
２の集光レンズ５及び７にて構成し、第２の集光レンズ
７で第１の集光レンズ５のギャップｇを埋めるように形
成するようにしたので、下層に形成される第１の集光レ
ンズ５間のギャップｇを上層に形成される第２の集光レ
ンズ７で埋めるかたちとなり、集光レンズ間のギャップ
レス化を実現させることができる。その結果、イメージ
エリア全体に入射する光を有効利用することができ、感
度の向上を効率よく図ることができる。According to the above-described structure of the present invention, the condenser lens formed on the light receiving portion 2 is constituted by the first and second condenser lenses 5 and 7 having different refractive indexes, respectively. Since the first condensing lens 5 is formed so as to fill the gap g of the first condensing lens 5, the gap g between the first condensing lenses 5 formed in the lower layer is formed in the upper layer. The second condensing lens 7 fills the gap, and a gapless structure can be realized between the condensing lenses. As a result, the light incident on the entire image area can be effectively used, and the sensitivity can be improved efficiently.
【００１２】特に、第１及び第２の集光レンズ５及び７
の各屈折率を夫々ｎ1 及びｎ2 としたとき、ｎ1 ＞ｎ2
＞１の関係にすることにより、第１の集光レンズ５間の
ギャップｇ部分に入射する光Ｌｇを受光部２側へ有効に
集光させることができ、更に感度の向上を図ることがで
きる。In particular, the first and second condenser lenses 5 and 7
Let n 1 and n 2 be the respective refractive indices of n 1 > n 2
With the relation of> 1, the light Lg incident on the gap g portion between the first condenser lenses 5 can be effectively condensed to the light receiving portion 2 side, and the sensitivity can be further improved. ..
【００１３】[0013]
【実施例】以下、図１を参照しながら本発明の実施例を
説明する。図１は、本実施例に係る固体撮像装置の要部
を示す構成図である。Embodiments of the present invention will be described below with reference to FIG. FIG. 1 is a configuration diagram showing a main part of the solid-state imaging device according to the present embodiment.
【００１４】この固体撮像装置は、図示するように、シ
リコン基板１の表面に、イメージエリアを構成する多数
の受光部２が形成され、これら受光部２を含む全面に平
坦化膜３が形成され、更に、該平坦化膜３上に、例えば
赤、緑及び青のカラーフィルタ４Ｒ、４Ｇ及び４Ｂが夫
々対応する受光部２上に形成され、そして、このカラー
フィルタ４Ｒ、４Ｇ及び４Ｂ上において、各受光部２に
対応した位置に第１のマイクロ集光レンズ５が形成され
て構成されている。ここまでの構成は、図２に示す従来
例の構成と同じである。尚、図において、６は転送電極
及び遮光膜の形成による段差を模式的に示すものであ
る。As shown in the figure, in this solid-state image pickup device, a large number of light receiving portions 2 forming an image area are formed on the surface of a silicon substrate 1, and a flattening film 3 is formed on the entire surface including these light receiving portions 2. Further, red, green, and blue color filters 4R, 4G, and 4B are formed on the flattening film 3, respectively, on the corresponding light receiving portions 2, and on the color filters 4R, 4G, and 4B, A first micro condenser lens 5 is formed at a position corresponding to each light receiving portion 2. The configuration so far is the same as the configuration of the conventional example shown in FIG. In the figure, 6 schematically shows a step due to the formation of the transfer electrode and the light shielding film.
【００１５】しかして、本例においては、第１のマイク
ロ集光レンズ５上に、第２のマイクロ集光レンズ７を形
成して構成する。この第２のマイクロ集光レンズ７は、
第１のマイクロ集光レンズ５の屈折率ｎ1 よりも低い屈
折率ｎ2 を有する材料を約５０００Åほどコーティング
またはＥＣＲプラズマＣＶＤ法により低温にて形成す
る。このとき、第１のマイクロ集光レンズ５間に形成さ
れたギャップｇを埋めるように第２のマイクロ集光レン
ズ７が形成される。Therefore, in this example, the second micro condenser lens 7 is formed on the first micro condenser lens 5. This second micro condenser lens 7 is
A material having a refractive index n 2 lower than the refractive index n 1 of the first micro condenser lens 5 is coated or formed at a low temperature by the ECR plasma CVD method by about 5000 Å. At this time, the second micro condenser lens 7 is formed so as to fill the gap g formed between the first micro condenser lenses 5.
【００１６】また、第１のマイクロ集光レンズ５の材料
としては、例えばポリイミド等、屈折率ｎ1 が１．７〜
１．８のものを使用することができる。また、第２のマ
イクロ集光レンズ７の材料は、その形成方法によって異
なり、コーティングによって形成する場合の材料として
は、例えばｉ線レジスト又はｇ線レジスト及びフッ素系
樹脂など、屈折率ｎ2 が１．４〜１．６のものを用いる
ことができる。一方、ＥＣＲプラズマＣＶＤ法により低
温にて形成する場合の材料としては、例えばプラズマＳ
ｉＯ2 膜など、屈折率ｎ2 が１．４〜１．５のものを用
いることができる。The material of the first micro-condensing lens 5 is, for example, polyimide or the like and has a refractive index n 1 of 1.7 to.
1.8 can be used. The material of the second micro-focusing lens 7 differs depending on the method of forming the second micro-focusing lens 7. The material for forming the second micro-focusing lens 7 is, for example, an i-line resist or a g-line resist and a fluororesin having a refractive index n 2 of 1. The thing of 4-1.6 can be used. On the other hand, as a material for forming at low temperature by the ECR plasma CVD method, for example, plasma S
An iO 2 film or the like having a refractive index n 2 of 1.4 to 1.5 can be used.
【００１７】次に、第１のマイクロ集光レンズ５間にお
けるギャップｇ部分に入射する光Ｌｇの光路を説明す
る。Next, the optical path of the light Lg incident on the gap g portion between the first micro condenser lenses 5 will be described.
【００１８】ギャップｇ部分に入射する光Ｌｇは、ま
ず、空気中の屈折率よりも大きい屈折率ｎ2 （＞１）を
有する第２のマイクロ集光レンズ７の表面にて、フレネ
ルの法則に従って屈折する。即ち、法線Ｍに対して角度
θ1にて入射した上記光Ｌｇは、第２のマイクロ集光レ
ンズ７の表面にて、法線Ｍに対して角度θ2 （＜θ1 ）
方向に屈折される。The light Lg incident on the gap g portion is first subjected to Fresnel's law on the surface of the second micro-focusing lens 7 having a refractive index n 2 (> 1) larger than the refractive index in air. Refract. That is, the light Lg incident at an angle θ 1 with respect to the normal M is an angle θ 2 (<θ 1 ) with respect to the normal M on the surface of the second micro condenser lens 7.
Is refracted in the direction.
【００１９】次に、この第２のマイクロ集光レンズ７に
入射した光Ｌｇは、第２のマイクロ集光レンズ７の屈折
率ｎ2 よりも大きい屈折率ｎ1 （＞ｎ2 ）を有する第１
のマイクロ集光レンズ５の表面にて、フレネルの法則に
従って屈折する。即ち、法線Ｎに対して角度θ3 にて入
射した上記光Ｌｇは、第１のマイクロ集光レンズ５の表
面にて、法線Ｎに対して角度θ4 （＞θ3 ）方向に屈折
される。Next, the light Lg incident on the second micro condenser lens 7 has a refractive index n 1 (> n 2 ) larger than the refractive index n 2 of the second micro condenser lens 7. 1
The light is refracted on the surface of the micro condenser lens 5 according to Fresnel's law. That is, the light Lg incident at an angle θ 3 with respect to the normal line N is refracted on the surface of the first micro condensing lens 5 in the direction of an angle θ 4 (> θ 3 ) with respect to the normal line N. To be done.
【００２０】そして、この第１のマイクロ集光レンズ５
に入射した光Ｌｇは、次に、下層のカラーフィルタ（図
示の例では４Ｒ）及び平坦化膜３の各表面にて、幾分屈
折されて、最終的にシリコン基板１表面に形成された受
光部２に入射する。このように、第１のマイクロ集光レ
ンズ５間におけるギャップｇ部分に入射する光Ｌｇも受
光部２上に集光させることができる。尚、ギャップｇ以
外の部分に入射する光Ｌは、確実に受光部２に入射され
る。The first micro condenser lens 5
The light Lg incident on is then refracted to some extent on each surface of the lower color filter (4R in the illustrated example) and the flattening film 3, and finally received on the surface of the silicon substrate 1. It is incident on the part 2. In this way, the light Lg incident on the gap g portion between the first micro condenser lenses 5 can also be condensed on the light receiving unit 2. The light L incident on the portion other than the gap g surely enters the light receiving unit 2.
【００２１】上述のように、本例によれば、受光部２上
に形成されるマイクロ集光レンズを、夫々屈折率の異な
る第１及び第２のマイクロ集光レンズ５及び７にて構成
し、第２のマイクロ集光レンズ７で第１のマイクロ集光
レンズ５のギャップｇを埋めるように形成するようにし
たので、下層に形成される第１のマイクロ集光レンズ５
間のギャップｇを上層に形成される第２のマイクロ集光
レンズ７で埋めるかたちとなり、マイクロ集光レンズ間
のギャップレス化を実現させることができる。その結
果、イメージエリア全体に入射する光を有効利用するこ
とができ、感度の向上を効率よく図ることができる。As described above, according to this example, the micro condenser lenses formed on the light receiving section 2 are composed of the first and second micro condenser lenses 5 and 7 having different refractive indexes. Since the second micro condenser lens 7 is formed so as to fill the gap g of the first micro condenser lens 5, the first micro condenser lens 5 formed in the lower layer.
The gap g between them is filled with the second micro condensing lens 7 formed in the upper layer, and it is possible to realize a gapless structure between the micro condensing lenses. As a result, the light incident on the entire image area can be effectively used, and the sensitivity can be improved efficiently.
【００２２】特に、第１及び第２のマイクロ集光レンズ
５及び７の各屈折率を夫々ｎ1 及びｎ2 としたとき、ｎ
1 ＞ｎ2 ＞１の関係にすることにより、第１のマイクロ
集光レンズ５間のギャップｇ部分に入射する光Ｌｇを受
光部２側へ有効に集光させることができ、更に感度の向
上を図ることができる。In particular, when the respective refractive indices of the first and second micro condenser lenses 5 and 7 are n 1 and n 2 , respectively,
By setting the relation of 1 > n 2 > 1, it is possible to effectively condense the light Lg incident on the gap g portion between the first micro condensing lenses 5 to the light receiving portion 2 side, and further improve the sensitivity. Can be planned.
【００２３】ここで、第１のマイクロ集光レンズ５の繰
り返しピッチＰを８μｍ、第１のマイクロ集光レンズ５
間のギャップ幅ｄを１．５μｍとすると、本例の場合、
上層の第２のマイクロ集光レンズ７によって、第１のマ
イクロ集光レンズ５間のギャップｇがなくなる形となる
ため、集光最大幅は８−０＝８μｍ、最大感度の向上率
は８／３＝２．７倍となり、従来の２．２倍と比して大
幅なる感度の向上を図ることができる。尚、図におい
て、第１及び第２のマイクロ集光レンズ５及び７は、ス
トライプ形状で、断面方向からの集光しか考えないもの
とする。Here, the repeating pitch P of the first micro condensing lens 5 is 8 μm, and the first micro condensing lens 5 is
If the gap width d between them is 1.5 μm, in the case of this example,
The upper second micro-condensing lens 7 eliminates the gap g between the first micro-condensing lenses 5, so that the maximum converging width is 8-0 = 8 μm, and the maximum sensitivity improvement rate is 8 /. 3 = 2.7 times, which is a significant improvement in sensitivity as compared with the conventional 2.2 times. In the figure, it is assumed that the first and second micro condenser lenses 5 and 7 have a stripe shape and only condensing light from the cross-sectional direction.
【００２４】[0024]
【発明の効果】本発明に係る固体撮像装置によれば、マ
イクロ集光レンズ間のギャップをなくして、イメージエ
リア全体に入射する光を有効利用することができ、感度
の大幅なる向上を図ることができる。According to the solid-state image pickup device of the present invention, the gap between the micro condenser lenses can be eliminated and the light incident on the entire image area can be effectively used, and the sensitivity can be greatly improved. You can
【図１】本実施例に係る固体撮像装置の要部（イメージ
エリア）を示す構成図。FIG. 1 is a configuration diagram showing a main part (image area) of a solid-state imaging device according to an embodiment.
【図２】従来例に係る固体撮像装置の要部（イメージエ
リア）を示す構成図。FIG. 2 is a configuration diagram showing a main part (image area) of a solid-state imaging device according to a conventional example.
１ シリコン基板 ２ 受光部 ３ 平坦化膜 ４Ｒ，４Ｇ，４Ｂ カラーフィルタ ５ 第１のマイクロ集光レンズ ６ 段差 ７ 第２のマイクロ集光レンズ 1 Silicon substrate 2 Light receiving part 3 Flattening film 4R, 4G, 4B Color filter 5 First micro focusing lens 6 Step 7 Second micro focusing lens
Claims (2)
撮像装置において、 上記集光レンズが、夫々屈折率の異なる第１及び第２の
集光レンズにて構成され、上記第２の集光レンズが、上
記第１の集光レンズのギャップを埋めるように形成され
ていることを特徴とする請求項１記載の固体撮像装置。1. A solid-state imaging device having a condenser lens formed on a light-receiving portion, wherein the condenser lens is composed of first and second condenser lenses having different refractive indexes, respectively. The solid-state imaging device according to claim 1, wherein the condenser lens is formed so as to fill a gap of the first condenser lens.
率を夫々ｎ1 及びｎ2 としたとき、ｎ1 ＞ｎ2 ＞１の関
係を有することを特徴とする請求項１記載の固体撮像装
置。 2. The relationship of n 1 > n 2 > 1 when the respective refractive indices of the first and second condenser lenses are n 1 and n 2 , respectively. Solid-state imaging device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20048791A JP3166220B2 (en) | 1991-08-09 | 1991-08-09 | Solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20048791A JP3166220B2 (en) | 1991-08-09 | 1991-08-09 | Solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0548057A true JPH0548057A (en) | 1993-02-26 |
| JP3166220B2 JP3166220B2 (en) | 2001-05-14 |
Family
ID=16425136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20048791A Expired - Fee Related JP3166220B2 (en) | 1991-08-09 | 1991-08-09 | Solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3166220B2 (en) |
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| KR100399939B1 (en) * | 2001-11-12 | 2003-09-29 | 주식회사 하이닉스반도체 | Image sensor and method of manufacturing the same |
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| JP4622516B2 (en) * | 2002-07-09 | 2011-02-02 | 凸版印刷株式会社 | Solid-state imaging device and manufacturing method thereof |
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| JP2006278356A (en) * | 2005-03-25 | 2006-10-12 | Dainippon Printing Co Ltd | Solid-state image pickup element and manufacturing method thereof |
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| Publication number | Publication date |
|---|---|
| JP3166220B2 (en) | 2001-05-14 |
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