KR100399939B1 - Image sensor and method of manufacturing the same - Google Patents
Image sensor and method of manufacturing the same Download PDFInfo
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- KR100399939B1 KR100399939B1 KR10-2001-0070213A KR20010070213A KR100399939B1 KR 100399939 B1 KR100399939 B1 KR 100399939B1 KR 20010070213 A KR20010070213 A KR 20010070213A KR 100399939 B1 KR100399939 B1 KR 100399939B1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 19
- 150000004767 nitrides Chemical class 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 239000011810 insulating material Substances 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 1
- 206010034960 Photophobia Diseases 0.000 abstract description 6
- 208000013469 light sensitivity Diseases 0.000 abstract description 6
- 230000010354 integration Effects 0.000 abstract description 4
- 230000001939 inductive effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Abstract
본 발명은 마이크로렌즈 사이의 브리지를 유발하지 않으면서 마이크로렌즈의 크기를 최대한으로 증가시키고 그 균일하게 하여 광집적효율 및 광감도를 향상시킴과 동시에, 마이크로렌즈와 수광소자 사이의 거리차를 최소화하여 광감도를 더욱더 향상시킬 수 있는 이미지 센서 및 그 제조방법을 제공한다. 본 발명에 따른 이미지 센서는 수광소자 및 필드절연막이 형성된 반도체 기판; 기판 상에 형성된 제 1 평탄화막; 수광소자 상의 제 1 평탄화막 상부에 형성된 마이크로렌즈; 마이크로렌즈 상부에 형성된 칼라필터; 및 마이크로렌즈와 칼라필터 사이에 형성된 제 2 평탄화막을 포함하고, 마이크로렌즈는 감광제로 이루어진 내부 마이크로렌즈와 감광제보다 큰 굴절율을 갖는 절연성 물질막으로 이루어진 외부 마이크로렌즈로 이루어지며, 이웃하는 마이크로렌즈와 서로 접하는 것을 특징으로 한다. 바람직하게, 절연성 물질막은 저온증착방식에 의해 형성된 질화막이다.The present invention improves the light integration efficiency and light sensitivity by increasing the size of the microlens to the maximum and making it uniform without inducing a bridge between the microlenses, and at the same time, minimizing the distance difference between the microlens and the light receiving element. It provides an image sensor and a method of manufacturing the same that can be further improved. An image sensor according to the present invention includes a semiconductor substrate on which a light receiving element and a field insulating film are formed; A first planarization film formed on the substrate; A micro lens formed on the first planarization film on the light receiving element; A color filter formed on the microlens; And a second planarization film formed between the microlens and the color filter, wherein the microlens is formed of an internal microlens made of a photosensitive agent and an external microlens made of an insulating material film having a refractive index greater than that of the photosensitive agent, and is adjacent to a neighboring microlens. It is characterized in that the contact. Preferably, the insulating material film is a nitride film formed by a low temperature deposition method.
Description
본 발명은 이미지 센서 및 그 제조방법에 관한 것으로, 특히 광특성을 향상시킴과 동시에 공정을 단순화할 수 있는 이미지 센서 및 그 제조방법에 관한 것이다.The present invention relates to an image sensor and a method of manufacturing the same, and more particularly, to an image sensor and a method of manufacturing the same that can improve the optical characteristics and simplify the process.
이미지 센서는 빛을 감지하는 광감지 부분과 감지된 빛을 전기적 신호로 처리하여 데이터화하는 로직회로 부분으로 구성되어 있다. 또한, 광감도를 높이기 위하여 전체 이미지 센서 소자에서 광감지 부분의 면적이 차지하는 비율(fill factor)을 크게 하려는 노력을 진행하고 있으나, 근본적으로 로직회로 부분을 제거할 수 없기 때문에 제한된 면적하에서 이러한 노력에는 한계가 있다. 따라서, 광감도를 높이기 위하여 광감지 부분 이외의 영역으로 입사하는 빛의 경로를 변경하여 광감지 부분으로 모아주는 집광기술이 등장하였는데, 이 기술이 바로 마이크로 렌즈 형성 기술이다. 또한, 칼라 이미지를 구현하기 위한 이미지센서는 외부로부터의 빛을 받아 광전하를 생성 및 축적하는 광감지부분 상부에 칼라 필터가 어레이되어 있으며, 이러한 칼라 필터 어레이(CFA : Color Filter Array)는 일반적으로 레드(Red), 그린(Green) 및 블루(Blue)의 3 가지 칼라필터로 이루어진다.The image sensor is composed of a light sensing part that detects light and a logic circuit part that processes the detected light into an electrical signal to make data. In addition, although efforts are made to increase the fill factor of the area of the light sensing portion of the entire image sensor element in order to increase the light sensitivity, this effort is limited under a limited area since the logic circuit portion cannot be removed. There is. Therefore, in order to increase the light sensitivity, a light condensing technology that changes the path of light incident to an area other than the light sensing portion and collects the light sensing portion has emerged, which is a microlens forming technique. In addition, an image sensor for realizing a color image has an array of color filters on the upper part of the light sensing portion for generating and accumulating photocharges from the outside, such a color filter array (CFA: Color Filter Array) It consists of three color filters: red, green and blue.
도 1은 종래의 이미지 센서를 나타낸 단면도로서, 도 1을 참조하여 그 제조방법을 간략하게 설명한다.1 is a cross-sectional view showing a conventional image sensor, a brief description of the manufacturing method with reference to FIG.
먼저, 실리콘과 같은 반도체 기판(10) 상에 소자간의 전기적인 절연을 위하여 필드 절연막(11)을 형성하고, 포토다이오드와 같은 수광소자(12A, 12B, 12C)를포함하는 픽셀을 형성한 다음, 기판 전면 상에 제 1 평탄화막(13)을 형성한다. 그리고 나서, 제 1 평탄화막(13) 상부에 칼라필터용 제 1 감광제를 도포하고, 칼라필터 마스크(미도시)를 이용하여 노광한 후, 현상 및 베이킹(baking)하여 수광소자(12A, 12B, 12C) 상의 제 1 평탄화막(13) 상부에 칼라필터(14A, 14B, 14C)를 각각 형성한다.First, a field insulating film 11 is formed on the semiconductor substrate 10 such as silicon to electrically insulate between devices, and then a pixel including light receiving elements 12A, 12B, and 12C, such as a photodiode, is formed. The first planarization film 13 is formed on the entire substrate. Then, the first photosensitive agent for color filters is applied on the first planarization film 13, exposed using a color filter mask (not shown), and then developed and baked to receive the light receiving elements 12A, 12B, Color filters 14A, 14B, and 14C are formed on the first planarization film 13 on 12C, respectively.
그 다음, 기판 전면 상에 오버코팅층(over coating layer; OCL)용 제 2 감광제를 도포하고 노광, 현상 및 베이킹하여 제 2 평탄화막(15)을 형성한다. 그 후, 제 2 평탄화막(15) 상부에 마이크로 렌즈용 제 3 감광제를 도포하고, 노광 및 현상하여 마이크로 렌즈 패턴을 형성한 다음, 베이킹을 수행하여 칼라필터(14A, 14B, 14C) 상의 제 2 평탄화막(15) 상부에 소정간격으로 이격된 구면형상의 마이크로 렌즈(16A, 16B, 16C)를 각각 형성한다.Next, a second photoresist for an over coating layer (OCL) is applied on the entire surface of the substrate, and the second flattening film 15 is formed by exposing, developing and baking. Thereafter, a third photoresist for microlens is applied on the second planarization film 15, exposed and developed to form a microlens pattern, and then baking is performed to form a second layer on the color filters 14A, 14B, and 14C. Spherical micro lenses 16A, 16B, and 16C are spaced apart from each other at predetermined intervals on the planarization film 15, respectively.
한편, 마이크로 렌즈(16A, 16B, 16C)는 일반적으로 평탄화된 표면 상에서만 찌그러짐 없는 구면형상으로 형성하는 것이 가능하기 때문에, 마이크로 렌즈(16A, 16B, 16C)를 형성하기 전에 칼라필터(14A, 14B, 14C)에 의해 발생된 표면 단차를 제거하기 위하여 반드시 평탄화 공정을 수행하여야 한다. 그러나, 상술한 종래 기술에서 알 수 있는 바와 같이, 칼라필터(14A, 14B, 14C)의 형성 후 마이크로 렌즈(16A, 16B, 16C)를 형성하기 전에, 표면을 평탄화하기 위한 제 2 평탄화막(15)을 형성하기 위해서는 OCL용 감광제의 도포, 노광, 현상, 및 베이킹 공정 등의 과정을 수행해야 하므로 공정이 복잡해진다.On the other hand, since the microlenses 16A, 16B and 16C can generally be formed in a spherical shape without distortion on only the flattened surface, the color filters 14A and 14B before forming the microlenses 16A, 16B and 16C. , The planarization process must be performed to remove the surface step caused by 14C). However, as can be seen in the above-described prior art, after forming the color filters 14A, 14B, 14C, before forming the microlenses 16A, 16B, 16C, the second planarization film 15 for planarizing the surface In order to form), processes such as application, exposure, development, and baking of an OCL photosensitive agent must be performed, which complicates the process.
또한, 우수한 광감도를 얻기 위해서는 마이크로렌즈(16A, 16B, 16C)와 수광소자(12A, 12B, 12C) 사이의 거리가 짧은 것이 유리하나, 상술한 종래기술에서는 마이크로렌즈가 최상단에 형성되므로 마이크로렌즈와 수광소자 사이의 거리차가 상대적으로 크다.In addition, although the distance between the microlenses 16A, 16B and 16C and the light receiving elements 12A, 12B and 12C is short in order to obtain excellent photosensitivity, it is advantageous in the above-described prior art that the microlenses are formed at the top. The distance difference between the light receiving elements is relatively large.
또한, 이미지 센서에서 광집적효율을 증가시키기 위해서는 마이크로 렌즈의 크기를 증가시켜야 하는데, 상술한 바와 같이 감광제를 이용하여 마이크로 렌즈를 형성하는 경우에는, 마이크로 렌즈의 크기를 증가시키기 위하여 마이크로렌즈 사이의 간격을 좁히게 되면 베이킹 공정시 마이크로 렌즈 사이에 브리지(bridge)가 유발되므로 일정 크기 이상 마이크로 렌즈를 증가시킬 수 없을 뿐만 아니라, 마이크로렌즈 어레이 상에서 마이크로 렌즈의 크기가 균일하지 못하여 이미지 센서의 광특성 저하를 초래하게 된다.In addition, in order to increase the light integration efficiency in the image sensor, the size of the microlenses should be increased. In the case of forming a microlens using a photosensitive agent as described above, the interval between the microlenses is increased to increase the size of the microlenses. In addition, narrowing of the micro-lens will cause a bridge between the microlenses during the baking process, and it is impossible to increase the microlens more than a certain size. Will result.
본 발명은 상기와 같은 종래기술의 문제점을 해결하기 위하여 제안된 것으로, 본 발명의 목적은 마이크로렌즈 사이의 브리지를 유발하지 않으면서 마이크로렌즈의 크기를 최대한으로 증가시키고 그 균일하게 하여 광집적효율 및 광감도를 향상시킴과 동시에, 마이크로렌즈와 수광소자 사이의 거리차를 최소화하여 광감도를 더욱더 향상시킬 수 있는 이미지 센서를 제공하는 것이다.The present invention has been proposed to solve the problems of the prior art as described above, and an object of the present invention is to increase the size of the microlens to the maximum and to make it uniform without causing a bridge between the microlenses, thereby increasing the light integration efficiency and The present invention provides an image sensor capable of improving the light sensitivity and minimizing the distance difference between the microlens and the light receiving device.
또한, 본 발명의 다른 목적은 상기 이미지 센서의 제조방법을 제공하는 것이다.Another object of the present invention is to provide a method of manufacturing the image sensor.
도 1은 종래의 이미지 센서를 나타낸 단면도.1 is a cross-sectional view showing a conventional image sensor.
도 2a 내지 도 2d는 본 발명의 실시예에 따른 이미지 센서의 제조방법을 설명하기 위한 단면도.2A to 2D are cross-sectional views illustrating a method of manufacturing an image sensor according to an embodiment of the present invention.
도 3은 본 발명의 다른 실시예에 따른 이미지 센서의 단면도.3 is a cross-sectional view of an image sensor according to another embodiment of the present invention.
※ 도면의 주요부분에 대한 부호의 설명※ Explanation of code for main part of drawing
20 : 반도체 기판 21 : 필드절연막20 semiconductor substrate 21 field insulating film
22A, 22B, 22C : 수광소자 23, 300 : 평탄화막22A, 22B, 22C: light receiving elements 23, 300: planarization film
24A, 24B, 24C : 내부 마이크로렌즈24A, 24B, 24C: Internal Microlens
25A, 25B, 25C : 외부 마이크로렌즈25A, 25B, 25C: External Micro Lens
200A, 200B, 200C : 마이크로렌즈200A, 200B, 200C: Micro Lens
26A, 26B, 26C : 칼라필터 100, 110 : 마스크26A, 26B, 26C: color filter 100, 110: mask
상기 본 발명의 목적을 달성하기 위하여, 본 발명에 따른 이미지 센서는 수광소자 및 필드절연막이 형성된 반도체 기판; 기판 상에 형성된 제 1 평탄화막; 수광소자 상의 제 1 평탄화막 상부에 형성된 마이크로렌즈; 마이크로렌즈 상부에 형성된 칼라필터; 및 마이크로렌즈와 칼라필터 사이에 형성된 제 2 평탄화막을 포함하고, 마이크로렌즈는 감광제로 이루어진 내부 마이크로렌즈와 감광제보다 큰 굴절율을 갖는 절연성 물질막으로 이루어진 외부 마이크로렌즈로 이루어지며, 이웃하는 마이크로렌즈와 서로 접하는 것을 특징으로 한다.In order to achieve the object of the present invention, the image sensor according to the present invention comprises a semiconductor substrate having a light receiving element and a field insulating film; A first planarization film formed on the substrate; A micro lens formed on the first planarization film on the light receiving element; A color filter formed on the microlens; And a second planarization film formed between the microlens and the color filter, wherein the microlens is formed of an internal microlens made of a photosensitive agent and an external microlens made of an insulating material film having a refractive index greater than that of the photosensitive agent, and is adjacent to a neighboring microlens. It is characterized in that the contact.
바람직하게, 절연성 물질막은 저온증착방식에 의해 형성된 질화막이다.Preferably, the insulating material film is a nitride film formed by a low temperature deposition method.
또한, 상기 본 발명의 다른 목적을 달성하기 위하여, 본 발명에 따른 이미지 센서의 제조방법은, 수광소자 및 필드절연막이 형성된 반도체 기판 상에 제 1 평탄화막을 형성하는 단계; 수광소자 상의 제 1 평탄화막 상부에 감광제로 이루어진 구면형상의 내부 마이크로렌즈를 형성하는 단계; 감광제보다 큰 굴절율을 갖는 절연성 물질막을 이용하여, 내부 마이크로렌즈의 토폴로지가 유지되도록 상기 내부 마이크로렌즈를 덮는 외부 마이크로렌즈를 형성하여, 외부 및 내부의 적층구조로 이루어진 마이크로렌즈를 형성하는 단계; 및 마이크로렌즈 상부에 칼라필터를 형성하는 단계를 포함한다.In addition, in order to achieve the above object of the present invention, the manufacturing method of the image sensor according to the present invention, forming a first planarization film on a semiconductor substrate on which the light receiving element and the field insulating film is formed; Forming a spherical inner microlens made of a photosensitive agent on the first planarization film on the light receiving element; Forming an external microlens covering the internal microlens so that the topology of the internal microlens is maintained by using an insulating material film having a refractive index greater than that of the photosensitive agent, thereby forming a microlens having an external and internal laminated structure; And forming a color filter on the microlens.
바람직하게, 상기 절연성 물질막은 질화막으로 저온증착방식을 이용하여 증착하며, 질화막의 증착은 이웃하는 마이크로렌즈가 서로 접할 때까지 실시한다.Preferably, the insulating material film is deposited using a low temperature deposition method as a nitride film, and the deposition of the nitride film is performed until the neighboring microlens is in contact with each other.
이하, 본 발명이 속한 기술분야에서 통상의 지식을 가진 자가 본 발명을 보다 용이하게 실시할 수 있도록 하기 위하여 본 발명의 바람직한 실시예를 소개하기로 한다.Hereinafter, preferred embodiments of the present invention will be introduced in order to enable those skilled in the art to more easily carry out the present invention.
도 2a 내지 도 2d는 본 발명의 실시예에 따른 이미지 센서의 제조방법을 설명하기 위한 단면도이다.2A to 2D are cross-sectional views illustrating a method of manufacturing an image sensor according to an exemplary embodiment of the present invention.
도 2a를 참조하면, 실리콘과 같은 반도체 기판(20) 상에 소자간의 전기적인 절연을 위하여 필드 절연막(21)을 형성하고, 포토다이오드와 같은 수광소자(22A, 22B, 22C)를 포함하는 픽셀을 형성한 다음, 기판 전면 상에 평탄화막(23)을 형성한다. 그리고 나서, 평탄화막(23) 상부에 마이크로렌즈용 제 1 감광제를 도포하고, 수광소자(22A, 22B, 22C) 상의 제 1 감광제만을 일부 노출시키는 마이크로렌즈 마스크(100)를 이용하여 제 1 감광제를 노광한 후, 현상 및 베이킹(baking)하여 수광소자(22A, 22B, 22C) 상의 평탄화막(23) 상부에 구면형상의 작은 내부 마이크로렌즈(24A, 24B, 24C)를 형성한다.Referring to FIG. 2A, a pixel including a light insulating element 22A, 22B, 22C, such as a photodiode, is formed on the semiconductor substrate 20 such as silicon to form a field insulating film 21 for electrical insulation between devices. After the formation, the planarization film 23 is formed on the entire surface of the substrate. Then, a first photosensitive agent is applied to the planarization film 23 by using a microlens mask 100 that partially exposes only the first photosensitive agent on the light receiving elements 22A, 22B, and 22C. After exposure, they are developed and baked to form spherical small internal microlenses 24A, 24B, and 24C on top of the planarization film 23 on the light receiving elements 22A, 22B, and 22C.
도 2b를 참조하면, 기판 전면 상에 내부 마이크로렌즈(24A, 24B, 24C)의 토폴로지가 유지되도록 마이크로렌즈용 제 1 감광제보다 큰 굴절율을 갖는 절연성 물질막, 바람직하게 질화막을 증착한다. 이때, 질화막은 저온증착방식을 이용하여 증착하며, 증착은 이웃하는 마이크로렌즈와 접할때까지 실시한다. 이에 따라, 내부 마이크로렌즈(24A, 24B, 24C)를 덮는 구면형상의 외부 마이크로렌즈(25A, 25B, 25C)를 형성하여, 도 2c에 도시된 바와 같이, 종래(도 1 참조)보다 큰 크기를 갖는 마이크로렌즈(200A, 200B, 200B)를 완성한다.Referring to FIG. 2B, an insulating material film, preferably a nitride film, having a larger refractive index than the first photoresist for microlenses is deposited so as to maintain the topology of the internal microlenses 24A, 24B, and 24C on the front surface of the substrate. In this case, the nitride film is deposited using a low temperature deposition method, and the deposition is performed until contact with a neighboring microlens. As a result, spherical outer microlenses 25A, 25B, and 25C covering the inner microlenses 24A, 24B, and 24C are formed, and as shown in FIG. 2C, a larger size than the conventional one (see FIG. 1). The microlenses 200A, 200B, and 200B having are completed.
즉, 내부 마이크로렌즈는 감광제로 형성하고 외부 마이크로렌즈는 질화막으로 형성함으로써, 마이크로렌즈(200A, 200B, 200C)가 서로 접하더라도 질화막에 의해 브리지가 방지되므로 마이크로렌즈의 크기를 용이하게 증가시킬 수 있을 뿐만 아니라, 균일한 크기로 형성할 수 있게 된다. 또한, 마이크로렌즈를 칼라필터보다 먼저 형성하기 때문에, 마이크로렌즈(200A, 200B, 200C)와 수광소자(22A, 22B, 22C) 사이의 거리가 종래(도 1 참조) 보다 현저하게 감소된다. 그 다음, 기판 전면 상에 칼라필터용 제 2 감광제(26)를 도포한다.That is, since the inner microlens is formed of a photosensitive agent and the outer microlens is formed of a nitride film, even if the microlenses 200A, 200B, and 200C are in contact with each other, bridges are prevented by the nitride film, so that the size of the microlens can be easily increased. In addition, it can be formed in a uniform size. In addition, since the microlenses are formed before the color filter, the distance between the microlenses 200A, 200B and 200C and the light receiving elements 22A, 22B and 22C is significantly reduced compared with the conventional one (see FIG. 1). Next, the second photosensitive agent 26 for color filters is applied onto the entire substrate.
도 2d를 참조하면, 제 2 감광제(26)를 칼라필터 마스크(110; 도 2c 참조)를 이용하여 노광하고, 현상 및 베이킹하여 마이크로렌즈(200A, 200B, 200C) 상부에 칼라필터(26A, 26B, 26C)를 각각 형성한다. 즉, 구면형상으로 형성하여야 하는 마이크로렌즈와는 달리 칼라필터는 마이크로렌즈(200A, 200B, 200C) 바로 상부에서 패터닝이 가능하기 때문에, OCL과 같은 평탄화 공정을 생략할 수 있다.Referring to FIG. 2D, the second photosensitive agent 26 is exposed using a color filter mask 110 (see FIG. 2C), developed, and baked to color filter 26A, 26B on the microlenses 200A, 200B, and 200C. , 26C), respectively. That is, unlike the microlenses to be formed into a spherical shape, the color filter can be patterned directly on the microlenses 200A, 200B, and 200C, and thus, planarization processes such as OCL can be omitted.
한편, 도 3은 본 발명의 다른 실시예에 따른 이미지 센서의 단면도로서, 도 3에 도시된 바와 같이, 보다 안정적인 칼라필터를 형성하기 위하여, 마이크로렌즈(200A, 200B, 200C)의 형성 후 OCL과 같은 평탄화공정을 수행하여 평탄화막(300)을 형성한 후, 평탄화막(300) 상부에 칼라필터(26A, 26B, 26C)를 형성할 수도 있다.3 is a cross-sectional view of an image sensor according to another exemplary embodiment of the present invention. As shown in FIG. 3, in order to form a more stable color filter, after forming the microlenses 200A, 200B, and 200C, OCL and After forming the planarization layer 300 by performing the same planarization process, color filters 26A, 26B, and 26C may be formed on the planarization layer 300.
또한, 도시되지는 않았지만, 이후 패키지 공정시 파티클 등에 의해 야기되는 오염을 방지하기 위하여, 칼라필터(26A, 26B, 26C)를 덮도록 기판의 최상부층 상에 산화막을 증착하고 평탄화를 수행할 수도 있다.In addition, although not shown, in order to prevent contamination caused by particles during the packaging process, an oxide film may be deposited on the top layer of the substrate and planarized to cover the color filters 26A, 26B, and 26C. .
상기 실시예에 의하면, 마이크로렌즈를 감광제로 이루어진 내부 마이크로렌즈와 질화막으로 이루어진 외부 마이크로렌즈의 두 층으로 형성하여, 마이크로렌즈가 서로 접하더라도 질화막에 의해 브리지가 방지되므로 마이크로렌즈의 크기를 용이하게 증가시킬 수 있고, 균일한 크기로 마이크로렌즈를 형성할 수 있게 된다. 또한, 칼라필터보다 마이크로렌즈를 먼저 형성하여 마이크로렌즈와 수광소자 사이의 거리차를 최소화할 수 있게 된다.According to the above embodiment, the microlens is formed of two layers of an inner microlens made of a photosensitive agent and an outer microlens made of a nitride film, so that even if the microlens is in contact with each other, bridges are prevented by the nitride film, thereby easily increasing the size of the microlens. It is possible to form a microlens with a uniform size. In addition, by forming the microlens before the color filter, it is possible to minimize the distance difference between the microlens and the light receiving element.
이상에서 설명한 본 발명은 전술한 실시예 및 첨부된 도면에 의해 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능하다는 것이 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다.The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes are possible in the art without departing from the technical spirit of the present invention. It will be clear to those of ordinary knowledge.
전술한 본 발명은 마이크로렌즈 사이의 브리지를 방지하여 마이크로렌즈의 크기를 용이하게 증가시킬 수 있을 뿐만 아니라, 균일한 크기로 마이크로렌즈를 형성할 수 있으므로, 이미지센서의 광집적효율 및 광감도를 향상시킬 수 있다. 또한, 마이크로렌즈와 수광소자 사이의 거리차를 최소화함으로써 광감도를 더욱 더 향상시킬 수 있다.As described above, the present invention can not only increase the size of the microlenses by preventing the bridges between the microlenses, but also form microlenses with a uniform size, thereby improving the light integration efficiency and light sensitivity of the image sensor. Can be. In addition, the light sensitivity may be further improved by minimizing the distance difference between the microlens and the light receiving element.
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