KR20010061308A - Method for fabricating thin film image sensor - Google Patents
Method for fabricating thin film image sensor Download PDFInfo
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- KR20010061308A KR20010061308A KR1019990063801A KR19990063801A KR20010061308A KR 20010061308 A KR20010061308 A KR 20010061308A KR 1019990063801 A KR1019990063801 A KR 1019990063801A KR 19990063801 A KR19990063801 A KR 19990063801A KR 20010061308 A KR20010061308 A KR 20010061308A
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- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000011229 interlayer Substances 0.000 claims abstract description 36
- 230000002093 peripheral effect Effects 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 37
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 3
- 239000007943 implant Substances 0.000 abstract 1
- 206010034960 Photophobia Diseases 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 208000013469 light sensitivity Diseases 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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Abstract
Description
본 발명은 이미지센서의 제조 방법에 관한 것으로, 단위화소와 주변회로영역간의 단차를 감소시키고 화질을 개선시키는데 적합한 이미지센서의 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an image sensor, and more particularly, to a method of manufacturing an image sensor suitable for reducing a step difference between a unit pixel and a peripheral circuit region and improving image quality.
일반적 이미지센서(Image Sensor)로는 CCD(Charge coupled device) 이미지센서와 CMOS 이미지센서가 있는데, 최근에는 저전력을 사용하는 CMOS 이미지센서기술이 완성 단계에 이르러 상용화에 이르고 있다.Common image sensors include charge coupled device (CCD) image sensors and CMOS image sensors. Recently, CMOS image sensor technology using low power has been completed and commercialized.
그리고 CMOS 이미지센서는 빛을 감지하는 광감지소자를 포함한 단위화소 (Unit Pixel)와 감지된 빛을 전기적 신호로 처리하여 데이타화하는 주변회로영역으로 구성되어 있다. 광감도(Sensitivity)를 높이기 위하여 전체 이미지센서 소자에서 광감지소자의 면적이 차지하는 비율(Fill factor)을 크게하려는 노력이 진행되고 있지만, 근본적으로 주변회로영역을 제거할 수 없기 때문에 제한된 면적하에서 이러한 노력에는 한계가 있다. 따라서 광감도를 높여주기 위하여 광감지소자 이외의 영역으로 입사하는 빛의 경로를 바꿔서 광감지소자로 모아주는 집광기술이 등장하였는데, 이러한 기술이 바로 마이크로 렌즈(Microlens; ML) 형성 기술이다. 또한 , 컬러이미지를 구현하기 위한 이미지센서는 외부로부터의 빛을 받아 광전하를 생성 및 축적하는 광감지소자 상부에 컬러필터(Color filter)가 순차적으로 배열되어 있다. 상기의 칼라필터배열(Color Filter Array; CFA)은 적색(Red), 초록색(Green)및 청색(Blue)의 3가지 컬러로 이루어지거나, 황색(Yellow), 자황색(Magenta) 및 청록색(Cyan)의 3가지칼라로 이루어질 수 있다. 이와 같이 이미지센서의 광감도를 높이기 위하여 마이크로렌즈(ML)를 이용한다.CMOS image sensor is composed of unit pixel including light sensing element and peripheral circuit area to process sensed light as electrical signal and make data. Efforts have been made to increase the fill factor of the area of the overall image sensor in order to increase the sensitivity. However, since the peripheral circuit area cannot be removed, these efforts are limited in the limited area. There is a limit. Accordingly, in order to increase the light sensitivity, a light condensing technology that changes the path of light incident to a region other than the light sensing device and collects it into the light sensing device has emerged. Such a technique is a microlens (ML) formation technology. In addition, an image sensor for realizing a color image is sequentially arranged a color filter on the light sensing element for generating and accumulating photocharges by receiving light from the outside. The color filter array (CFA) is composed of three colors of red, green, and blue, or yellow, magenta, and cyan. It can consist of three colors. As such, the microlens ML is used to increase the light sensitivity of the image sensor.
또한 CMOS 이미지센서 칩에서 사용되는 마이크로렌즈(Microlens)는 포토레지스트(Photoresist)로 이루어져 있어 열에 취약한 단점이 있으나, 이러한 문제점을 해결하기 위해 렌즈형성 물질을 질화막을 이용한 기술이 제안되었다.In addition, the microlens used in the CMOS image sensor chip consists of photoresist, which is vulnerable to heat. However, in order to solve this problem, a technique using a nitride film as a lens forming material has been proposed.
그러나 포토다이오드를 제외한 주변회로영역에서 사용되는 다층 금속배선 (Metal Interconnection layer)을 절연하기 위한 다층의 층간절연막(Inter Metal Dielectric; IMD) 공정이 완료된 후 최종 상부에 단위화소의 컬러필터 및 마이크로렌즈가 형성되므로 포토다이오드와 컬러필터 사이에 필요없는 층간절연막이 존재한다.However, after completion of the Inter Metal Dielectric (IMD) process to insulate the Metal Interconnection layer used in the peripheral circuit area except the photodiode, the color filter and microlens of the unit pixel Since it is formed, there is an unnecessary interlayer insulating film between the photodiode and the color filter.
도 1은 종래기술에 따른 이미지센서의 제조 방법을 개략적으로 나타낸 도면으로서, 단위화소영역(X)과 주변회로영역(Y)으로 구분된 실리콘기판(11)에 단위화소 또는 단위화소영역(X)과 주변회로영역(Y)을 분리하기 위한 필드절연막(12)을 형성한다.1 is a view schematically illustrating a manufacturing method of an image sensor according to the related art, in which a unit pixel or a unit pixel area X is formed on a silicon substrate 11 divided into a unit pixel area X and a peripheral circuit area Y. And a field insulating film 12 for separating the peripheral circuit region Y from each other.
이어 상기 실리콘기판(11)의 단위화소영역(X)에 불순물 이온주입이나 확산에 의해 포토다이오드영역(13)을 형성하고, 주변회로영역(Y)에 게이트산화막(14), 게이트전극(15) 및 소오스/드레인영역(16)을 형성한다.Next, the photodiode region 13 is formed in the unit pixel region X of the silicon substrate 11 by impurity ion implantation or diffusion, and the gate oxide film 14 and the gate electrode 15 are formed in the peripheral circuit region Y. And a source / drain region 16.
이어 상기 결과물 전면에 제1층간절연막(17)을 증착 및 선택적 식각한 다음, 상기 식각된 제1층간절연막(17)을 통해 상기 주변회로영역(Y)의 소오스/드레인영역(16)과 전기적으로 연결되는 제1금속배선(18)을 형성한다. 이 때 상기 제1금속배선 (18)은 주변회로영역(Y)에만 형성된다.Subsequently, a first interlayer dielectric layer 17 is deposited and selectively etched on the entire surface of the resultant, and then electrically connected to the source / drain regions 16 of the peripheral circuit region Y through the etched first interlayer dielectric layer 17. The first metal wiring 18 to be connected is formed. At this time, the first metal wiring 18 is formed only in the peripheral circuit region Y.
이어 상기 제1금속배선(18)을 포함한 전면에 제2층간절연막(19)을 증착한 다음, 상기 주변회로영역(Y)에만 제2금속배선(20)을 형성한다.Subsequently, a second interlayer insulating film 19 is deposited on the entire surface including the first metal wiring 18, and then the second metal wiring 20 is formed only in the peripheral circuit region Y.
이와 같은 방법으로 소자 공정 조건에 따라 3층 내지 4층 금속배선을 형성한 다음, 단위화소내 제2금속배선(20) 상에 소자보호막(21) 및 컬러감광막을 도포하고 현상공정으로 컬러필터배열(22)을 형성한다. 이어 상기 컬러필터배열(22) 상에 마이크로렌즈용 감광막을 도포하고 열공정으로 상기 컬러필터배열(22)에 대향하는 마이크로렌즈(23)를 형성한다.In this manner, three- to four-layer metal wirings are formed according to the device process conditions, and then the device protection film 21 and the color photosensitive film are coated on the second metal wiring 20 in the unit pixel, and the color filter array is developed by the developing process. To form (22). Subsequently, a microlens photosensitive film is coated on the color filter array 22 and a microlens 23 facing the color filter array 22 is formed by a thermal process.
이와 같이 종래기술에서는 포토다이오드영역(13)의 상단에 단순하게 중첩되어 있는 층간절연막들(17,19)이 형성되고, 이 상태에서 컬러필터배열(22)과 마이크로렌즈(23)를 형성시키면 이미지센서 칩의 최종 높이는 마이크로렌즈(23)에 의해 결정이 된다.As described above, in the prior art, the interlayer insulating layers 17 and 19 that are simply superimposed on the upper portion of the photodiode region 13 are formed, and in this state, the color filter array 22 and the microlens 23 are formed. The final height of the sensor chip is determined by the microlens 23.
결국 이미지센서의 전체 높이는 층간절연막(17,19), 컬러필터배열(22) 및 마이크로렌즈(23)의 높이를 모두 포함하게 되므로 전체적인 칩의 높이가 증가하게 되므로, 패키지의 박막화에 한계성을 초래한다. 또한 다층의 층간절연막(17,19)은 고르지 못한 굴절율을 가지며 마이크로렌즈(23)에서 포토다이오드(13)까지의 거리증가로 인하여 입사광의 손실을 초래할 가능성이 발생한다.As a result, the overall height of the image sensor includes all of the heights of the interlayer insulating layers 17 and 19, the color filter array 22, and the microlens 23, so that the overall chip height is increased, thereby causing a limitation in thinning the package. . In addition, the multilayer interlayer insulating films 17 and 19 have uneven refractive indices and may cause loss of incident light due to an increase in the distance from the microlens 23 to the photodiode 13.
본 발명은 상기의 문제점을 해결하기 위해 안출한 것으로서, 입사광의 손실을 방지하여 화질을 개선하고 단위화소 상부의 층간절연막을 제거하여 칩의 박막화를 증가시키는데 적합한 이미지센서의 제조 방법을 제공함에 그 목적이 있다.The present invention has been made to solve the above problems, to provide a method of manufacturing an image sensor suitable for improving the image quality by preventing the loss of incident light and to increase the thinning of the chip by removing the interlayer insulating film on the unit pixel. There is this.
도 1 은 종래기술에 따른 이미지센서의 제조 방법을 나타낸 도면,1 is a view showing a manufacturing method of an image sensor according to the prior art;
도 2a 내지 도 2d 는 본 발명의 실시예에 따른 이미지센서의 제조 방법을 나타낸 도면.2A to 2D illustrate a method of manufacturing an image sensor according to an exemplary embodiment of the present invention.
*도면의 주요 부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *
31 : 실리콘기판 32 : 필드절연막31 silicon substrate 32 field insulating film
33 : 포토다이오드 34 : 게이트산화막33 photodiode 34 gate oxide film
35 : 게이트전극 36 : 소오스/드레인영역35: gate electrode 36: source / drain region
37 : 제1층간절연막 38 : 감광막37: first interlayer insulating film 38: photosensitive film
39 : 제1금속배선 40 : 제2층간절연막39: first metal wiring 40: second interlayer insulating film
41 : 제2금속배선 42 : 제3층간절연막41 second metal wiring 42 third interlayer insulating film
43 : 컬러필터배열 44 : 마이크로렌즈43: color filter array 44: microlens
X : 단위화소영역 Y : 주변회로영역X: unit pixel area Y: peripheral circuit area
상기의 목적을 달성하기 위한 본 발명의 이미지센서 제조 방법은 단위화소영역에 포토다이오드를 형성하고 주변회로영역에 트랜지스터를 형성하는 단계, 상기 단위화소영역 및 주변회로영역의 전면에 금속배선을 위한 층간절연막을 형성하는 단계, 상기 층간절연막을 선택적으로 식각하여 상기 단위화소영역을 노출시키는 단계, 상기 포토다이오드 상에 컬러필터 및 마이크로렌즈를 형성하는 단계를 포함하여 이루어짐을 특징으로 한다.In the method of manufacturing the image sensor of the present invention for achieving the above object, forming a photodiode in a unit pixel region and forming a transistor in a peripheral circuit region, an interlayer for metal wiring on the front surface of the unit pixel region and the peripheral circuit region. Forming an insulating film, selectively etching the interlayer insulating film to expose the unit pixel region, and forming a color filter and a microlens on the photodiode.
이하, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사상을 용이하게 실시할 수 있을 정도로 상세히 설명하기 위하여, 본 발명의 가장 바람직한 실시예를 첨부 도면을 참조하여 설명하기로 한다.Hereinafter, the preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention. .
본 발명에서는 마이크로렌즈의 형성 영역에 존재하는 높은 단차를 줄여서 전체 칩의 높이를 낮추고 동시에 입사광의 변형과 손실을 방지할 수 있는 기술을 제안한다.The present invention proposes a technique capable of reducing the height of the entire chip by reducing the high step present in the formation region of the microlenses and at the same time preventing deformation and loss of incident light.
도 2a 내지 도 2d는 본 발명의 실시예에 따른 이미지센서의 제조 방법을 나타낸 도면으로서, 통상의 이미지센서와 동일하게 단위화소영역(X)과 주변회로영역 (Y)가 구분되어 있다.2A to 2D are diagrams illustrating a method of manufacturing an image sensor according to an exemplary embodiment of the present invention, in which unit pixel regions X and peripheral circuit regions Y are divided in the same manner as conventional image sensors.
도 2a에 도시된 바와 같이, 실리콘기판(31)에 단위화소영역(X)간 또는 단위화소영역(X) 및 주변회로영역(Y)의 절연을 위한 필드절연막(32)을 형성한 다음, 상기 단위화소(X) 영역에 불순물 이온주입(Implant) 또는 확산(Diffusion)에 의한 포토다이오드영역(33)을 형성한다. 이어 상기 주변회로영역(Y)에 게이트산화막(34), 게이트전극(35)을 포함한 소오스/드레인영역(36)을 형성하는 트랜지스터 형성 공정을 진행한다. 이어 상기 결과물 전면에 금속배선간의 절연을 위한 제1층간절연막 (Inter Metal Dielectric; IMD)(37)을 형성한다.As shown in FIG. 2A, a field insulating film 32 is formed on the silicon substrate 31 to insulate between the unit pixel regions X or between the unit pixel regions X and the peripheral circuit region Y. The photodiode region 33 is formed in the unit pixel X region by impurity ion implantation or diffusion. Subsequently, a transistor forming process of forming a source / drain region 36 including the gate oxide layer 34 and the gate electrode 35 in the peripheral circuit region Y is performed. Subsequently, a first interlayer dielectric (IMD) 37 is formed on the entire surface of the resultant to insulate the metal wiring.
이어 상기 제1층간절연막(37) 상부에 감광막을 도포하고 노광 및 현상 공정으로 패터닝하여 단위화소영역(X)을 노출시킨다. 이어 상기 패터닝된 감광막(38)을 마스크로 하여 상기 단위화소영역(X)의 제1층간절연막(37)을 식각한다. 이 때 상기 제1층간절연막(37)은 습식식각으로 제거된다.Subsequently, a photosensitive film is coated on the first interlayer insulating film 37 and patterned by an exposure and development process to expose the unit pixel region X. Subsequently, the first interlayer insulating layer 37 of the unit pixel region X is etched using the patterned photoresist 38 as a mask. At this time, the first interlayer insulating film 37 is removed by wet etching.
도 2b에 도시된 바와 같이, 상기 패터닝된 감광막을 제거하고 상기 주변회로영역(Y)의 제1층간절연막(37)을 선택적으로 식각하여 상기 소오스/드레인영역(36)과 전기적으로 연결되는 제1금속배선(39)을 형성한다. 이어 상기 결과물 전면에 제2층간절연막(40)을 형성하고 상기 제2층간절연막(40) 상에 감광막을 도포하고 노광 및 현상으로 패터닝하여 단위화소영역(X)을 노출시킨다. 이어 상기 패터닝된 감광막을 마스크로 하여 상기 단위화소영역(X)의 제2층간절연막(40)을 제거한다.As shown in FIG. 2B, the patterned photoresist is removed, and the first interlayer insulating layer 37 of the peripheral circuit region Y is selectively etched to electrically connect to the source / drain region 36. Metal wiring 39 is formed. Subsequently, a second interlayer insulating film 40 is formed on the entire surface of the resultant, a photosensitive film is coated on the second interlayer insulating film 40, and patterned by exposure and development to expose the unit pixel region X. Subsequently, the second interlayer insulating layer 40 of the unit pixel region X is removed using the patterned photoresist as a mask.
도 2c에 도시된 바와 같이, 상기 제2층간절연막(40) 표면에 제2금속배선(41)을 형성한다.As shown in FIG. 2C, a second metal wiring 41 is formed on the surface of the second interlayer insulating film 40.
도 2d에 도시된 바와 같이, 계속하여 제3금속배선 내지 제4금속배선을 형성한 다음, 제3층간절연막(42)을 형성한다. 또한 상기 제2층간절연막(40) 상부에 수분이나 스크래치로부터 이미지센서를 보호하기 위한 소자보호막(Passivation)을 형성할 수 도 있다. 이어 상기 단위화소영역(X)을 포함한 전면에 컬러감광막을 도포하고 현상공정으로 컬러필터배열(43)을 형성한다. 이어 상기 컬러필터배열(43) 상부에 마이크로렌즈용 감광막을 도포하고 열공정으로 상기 컬러필터배열 (43)에 대향하는 마이크로렌즈(44)를 형성한다. 통상적으로 이미지센서의 금속배선층은 3층 내지 4층으로 이루어지며 이에 대한 층간절연막 공정을 진행했을 때 최종 생성되는 높이는 30000∼35000Å이다. 또한 컬러필터 및 마이크로렌즈의 높이는 35000Å이 된다.As shown in FIG. 2D, the third metal wiring to the fourth metal wiring are subsequently formed, and then the third interlayer insulating film 42 is formed. In addition, a passivation layer may be formed on the second interlayer insulating layer 40 to protect the image sensor from moisture or scratches. Subsequently, a color photosensitive film is coated on the entire surface including the unit pixel area X, and a color filter array 43 is formed by a developing process. Subsequently, a microlens photosensitive film is coated on the color filter array 43, and a microlens 44 is formed to face the color filter array 43 by a thermal process. Typically, the metal wiring layer of the image sensor is composed of three to four layers, the final height generated when the interlayer insulating film process for this is 30000 ~ 35000Å. In addition, the height of the color filter and the microlens is 35000Å.
상기와 같이 본 발명에서는, 포토다이오드(33) 표면상에 바로 컬러필터배열 (43)및 마이크로렌즈(44)를 형성하기 때문에 이미지센서의 전체 높이가 위치에 상관없이 전체적으로 고르고, 주변회로영역(Y)과 단위화소영역(X)의 형성 높이가 동일하기 때문에 이미지센서 칩의 박막화가 가능하다.As described above, in the present invention, since the color filter array 43 and the microlens 44 are formed directly on the surface of the photodiode 33, the overall height of the image sensor is uniform even regardless of the position, and the peripheral circuit area Y ) And the unit pixel area X have the same height, so that the image sensor chip can be thinned.
또한 컬러필터배열(43)과 포토다이오드(33) 사이에 층간절연막이 형성되지 않으므로 마이크로렌즈(44)로 입사되는 외부 입사광이 마이크로렌즈(44)와 컬러필터배열(44)을 통해 포토다이오드(33)로 바로 입사되므로 정보의 변형이나 손실 가능성이 감소된다.In addition, since the interlayer insulating film is not formed between the color filter array 43 and the photodiode 33, external incident light incident on the microlens 44 is transferred to the photodiode 33 through the microlens 44 and the color filter array 44. Since it is directly incident on the side, the possibility of deformation or loss of information is reduced.
본 발명의 기술 사상은 상기 바람직한 실시예에 따라 구체적으로 기술되었으나, 상기한 실시예는 그 설명을 위한 것이며 그 제한을 위한 것이 아님을 주의하여야 한다. 또한, 본 발명의 기술 분야의 통상의 전문가라면 본 발명의 기술 사상의범위 내에서 다양한 실시예가 가능함을 이해할 수 있을 것이다.Although the technical idea of the present invention has been described in detail according to the above preferred embodiment, it should be noted that the above-described embodiment is for the purpose of description and not of limitation. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.
상술한 바와 같이 본 발명은 주변회로영역의 금속배선을 위한 층간절연막을 단위화소영역에서 제거하므로써 전체적인 칩의 높이를 낮출 수 있으며, 컬러필터와 포토다이오드의 사이에 층간절연막이 존재하지 않으므로 입사광의 손실을 방지할 수 있는 효과가 있다.As described above, the present invention can lower the overall chip height by removing the interlayer insulating film for the metal wiring of the peripheral circuit area from the unit pixel area, and there is no interlayer insulating film between the color filter and the photodiode. There is an effect that can prevent.
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