JPH0547516B2 - - Google Patents

Info

Publication number
JPH0547516B2
JPH0547516B2 JP60135812A JP13581285A JPH0547516B2 JP H0547516 B2 JPH0547516 B2 JP H0547516B2 JP 60135812 A JP60135812 A JP 60135812A JP 13581285 A JP13581285 A JP 13581285A JP H0547516 B2 JPH0547516 B2 JP H0547516B2
Authority
JP
Japan
Prior art keywords
inp
wafer
mass transport
crucible
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60135812A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6114197A (ja
Inventor
Debitsudo Guriin Piitaa
Sejisumundo Otsutoo Re Danieru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
STC PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STC PLC filed Critical STC PLC
Publication of JPS6114197A publication Critical patent/JPS6114197A/ja
Publication of JPH0547516B2 publication Critical patent/JPH0547516B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2909—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3218—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2095—Methods of obtaining the confinement using melting or mass transport
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/119—Phosphides of gallium or indium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geometry (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Photoreceptors In Electrophotography (AREA)
JP60135812A 1984-06-28 1985-06-21 半導体装置製造用質量輸送方法 Granted JPS6114197A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8416417 1984-06-28
GB08416417A GB2162544B (en) 1984-06-28 1984-06-28 Mass transport process for manufacturing semiconductor devices

Publications (2)

Publication Number Publication Date
JPS6114197A JPS6114197A (ja) 1986-01-22
JPH0547516B2 true JPH0547516B2 (https=) 1993-07-16

Family

ID=10563088

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60135812A Granted JPS6114197A (ja) 1984-06-28 1985-06-21 半導体装置製造用質量輸送方法

Country Status (6)

Country Link
US (1) US4717443A (https=)
EP (1) EP0175436B1 (https=)
JP (1) JPS6114197A (https=)
AT (1) ATE72499T1 (https=)
DE (1) DE3585352D1 (https=)
GB (1) GB2162544B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4957780A (en) * 1987-01-20 1990-09-18 Gte Laboratories Incorporated Internal reactor method for chemical vapor deposition
SE9500326D0 (sv) * 1995-01-31 1995-01-31 Abb Research Ltd Method for protecting the susceptor during epitaxial growth by CVD and a device for epitaxial growth by CVD
US7072557B2 (en) * 2001-12-21 2006-07-04 Infinera Corporation InP-based photonic integrated circuits with Al-containing waveguide cores and InP-based array waveguide gratings (AWGs) and avalanche photodiodes (APDs) and other optical components containing an InAlGaAs waveguide core
CN114597291A (zh) * 2022-03-29 2022-06-07 上海闻泰电子科技有限公司 一种巨量转移方法以及装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4365588A (en) * 1981-03-13 1982-12-28 Rca Corporation Fixture for VPE reactor
JPS58365A (ja) * 1981-04-20 1983-01-05 Sumitomo Light Metal Ind Ltd 溶融金属中の凝固界面位置検出方法並びに装置
US4468850A (en) * 1982-03-29 1984-09-04 Massachusetts Institute Of Technology GaInAsP/InP Double-heterostructure lasers

Also Published As

Publication number Publication date
GB8416417D0 (en) 1984-08-01
JPS6114197A (ja) 1986-01-22
EP0175436A2 (en) 1986-03-26
GB2162544A (en) 1986-02-05
GB2162544B (en) 1987-11-18
US4717443A (en) 1988-01-05
EP0175436B1 (en) 1992-02-05
ATE72499T1 (de) 1992-02-15
EP0175436A3 (en) 1988-09-28
DE3585352D1 (de) 1992-03-19

Similar Documents

Publication Publication Date Title
USRE41551E1 (en) Method of preparing group III-V compound semiconductor crystal
US3974002A (en) MBE growth: gettering contaminants and fabricating heterostructure junction lasers
Hakki Growth of In (1− x) Ga x P p‐n Junctions by Liquid Phase Epitaxy
US3703671A (en) Electroluminescent device
CA1157962A (en) Method of growing a doped iii-v alloy layer by molecular beam epitaxy
EP0356059B1 (en) Process for doping crystals of wide band gap semiconductors
US3994755A (en) Liquid phase epitaxial process for growing semi-insulating GaAs layers
JPH0547516B2 (https=)
US4788688A (en) Heterostructure laser
US4028147A (en) Liquid phase epitaxial process for growing semi-insulating GaAs layers
US3660312A (en) Method of making doped group iii-v compound semiconductor material
US4287527A (en) Opto-electronic devices based on bulk crystals of complex semiconductors
JPH05145093A (ja) 半導体結晶への水銀拡散法
Deppe et al. Buried heterostructure Al x Ga1− x As‐GaAs quantum well lasers by Ge diffusion from the vapor
CA1282874C (en) Semiconductor devices employing high resistivity in p-based epitaxial layer forcurrent confinement
CN85104071A (zh) 半导体工艺
JPS61179525A (ja) 気相成長方法
Onton Compound semiconductor alloys
Maruyama et al. Liquid Phase Epitaxy of Si-Doped GaAs for Efficient Light Emitting Diodes
Peev Liquid phase epitaxy of GaAs and AlGaAs
van Oirschot et al. LPE growth of DH laser structures with the double source method
GB2167230A (en) Semiconductor processing
JPS5929557B2 (ja) 半絶縁性砒化ガリウム単結晶
JP2003267794A (ja) 結晶成長方法及び結晶成長装置
Nishiyama et al. LPE growth of InP and InGaAs on MQW layers below 500 C