JPH0546112B2 - - Google Patents

Info

Publication number
JPH0546112B2
JPH0546112B2 JP58134193A JP13419383A JPH0546112B2 JP H0546112 B2 JPH0546112 B2 JP H0546112B2 JP 58134193 A JP58134193 A JP 58134193A JP 13419383 A JP13419383 A JP 13419383A JP H0546112 B2 JPH0546112 B2 JP H0546112B2
Authority
JP
Japan
Prior art keywords
superconductor
wiring
film
josephson
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58134193A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6027178A (ja
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP58134193A priority Critical patent/JPS6027178A/ja
Publication of JPS6027178A publication Critical patent/JPS6027178A/ja
Publication of JPH0546112B2 publication Critical patent/JPH0546112B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
JP58134193A 1983-07-22 1983-07-22 ジョセフソン効果素子の製造方法 Granted JPS6027178A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58134193A JPS6027178A (ja) 1983-07-22 1983-07-22 ジョセフソン効果素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58134193A JPS6027178A (ja) 1983-07-22 1983-07-22 ジョセフソン効果素子の製造方法

Publications (2)

Publication Number Publication Date
JPS6027178A JPS6027178A (ja) 1985-02-12
JPH0546112B2 true JPH0546112B2 (US07223432-20070529-C00017.png) 1993-07-13

Family

ID=15122604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58134193A Granted JPS6027178A (ja) 1983-07-22 1983-07-22 ジョセフソン効果素子の製造方法

Country Status (1)

Country Link
JP (1) JPS6027178A (US07223432-20070529-C00017.png)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5471999A (en) * 1977-11-19 1979-06-08 Rikagaku Kenkyusho Josephson effect element and method of fabricating same
JPS57196589A (en) * 1981-05-28 1982-12-02 Seiko Epson Corp Manufacture of nonlinear element
JPS59182586A (ja) * 1983-04-01 1984-10-17 Nippon Telegr & Teleph Corp <Ntt> ジヨセフソン接合素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5471999A (en) * 1977-11-19 1979-06-08 Rikagaku Kenkyusho Josephson effect element and method of fabricating same
JPS57196589A (en) * 1981-05-28 1982-12-02 Seiko Epson Corp Manufacture of nonlinear element
JPS59182586A (ja) * 1983-04-01 1984-10-17 Nippon Telegr & Teleph Corp <Ntt> ジヨセフソン接合素子

Also Published As

Publication number Publication date
JPS6027178A (ja) 1985-02-12

Similar Documents

Publication Publication Date Title
US5128745A (en) Semiconductor device with thin film resistor
JPS6321351B2 (US07223432-20070529-C00017.png)
JPS5919354A (ja) 半導体装置
JPH0546112B2 (US07223432-20070529-C00017.png)
JPH0573273B2 (US07223432-20070529-C00017.png)
JPH0247862A (ja) 半導体集積回路装置
JP2546297B2 (ja) 半導体記憶装置
JPH02222574A (ja) 半導体装置
JPS6347274B2 (US07223432-20070529-C00017.png)
KR940000312B1 (ko) 고부하 저항체를 갖는 sram 및 그 제조방법
JPS6236284Y2 (US07223432-20070529-C00017.png)
KR940001286B1 (ko) 반도체 장치의 고부하 저항기 및 그 제조방법
JPS58125880A (ja) ジヨセフソン接合素子
JPS6130422B2 (US07223432-20070529-C00017.png)
JPS62112359A (ja) 半導体装置の製造方法
KR960006703B1 (ko) 반도체 소자의 배선 제조방법
KR910000277B1 (ko) 반도체 장치의 제조방법
JPS6149439A (ja) 半導体装置の製造方法
JPS60198846A (ja) 半導体装置
JPS6113383B2 (US07223432-20070529-C00017.png)
JPH0779137B2 (ja) 半導体装置
JPS6358873A (ja) 半導体装置及びその製造方法
JPS63204742A (ja) 半導体装置の製造方法
JPH0523533U (ja) 配 線
JPS58176963A (ja) 半導体装置