JPH0544769B2 - - Google Patents

Info

Publication number
JPH0544769B2
JPH0544769B2 JP61225264A JP22526486A JPH0544769B2 JP H0544769 B2 JPH0544769 B2 JP H0544769B2 JP 61225264 A JP61225264 A JP 61225264A JP 22526486 A JP22526486 A JP 22526486A JP H0544769 B2 JPH0544769 B2 JP H0544769B2
Authority
JP
Japan
Prior art keywords
microwave
generation chamber
plasma generation
ion
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61225264A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6380449A (ja
Inventor
Naoki Suzuki
Tanejiro Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP61225264A priority Critical patent/JPS6380449A/ja
Publication of JPS6380449A publication Critical patent/JPS6380449A/ja
Publication of JPH0544769B2 publication Critical patent/JPH0544769B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electron Sources, Ion Sources (AREA)
JP61225264A 1986-09-24 1986-09-24 マイクロ波金属イオン源 Granted JPS6380449A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61225264A JPS6380449A (ja) 1986-09-24 1986-09-24 マイクロ波金属イオン源

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61225264A JPS6380449A (ja) 1986-09-24 1986-09-24 マイクロ波金属イオン源

Publications (2)

Publication Number Publication Date
JPS6380449A JPS6380449A (ja) 1988-04-11
JPH0544769B2 true JPH0544769B2 (cs) 1993-07-07

Family

ID=16826590

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61225264A Granted JPS6380449A (ja) 1986-09-24 1986-09-24 マイクロ波金属イオン源

Country Status (1)

Country Link
JP (1) JPS6380449A (cs)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2805009B2 (ja) * 1988-05-11 1998-09-30 株式会社日立製作所 プラズマ発生装置及びプラズマ元素分析装置
JP2787006B2 (ja) * 1995-05-10 1998-08-13 株式会社日立製作所 加工方法及び加工装置並びにプラズマ光源
CN112176406B (zh) * 2020-09-16 2021-06-25 北京清碳科技有限公司 一种单晶金刚石生长设备

Also Published As

Publication number Publication date
JPS6380449A (ja) 1988-04-11

Similar Documents

Publication Publication Date Title
JP4150504B2 (ja) イオン化物理蒸着のための方法および装置
US5767628A (en) Helicon plasma processing tool utilizing a ferromagnetic induction coil with an internal cooling channel
US5686796A (en) Ion implantation helicon plasma source with magnetic dipoles
CA2121892C (en) Ion beam gun
JPH0814026B2 (ja) 高密度プラズマ蒸着およびエッチング装置
JP2004501279A (ja) パルス高イオン化マグネトロンスパッタリング
JPH0816266B2 (ja) 高アスペクト比の穴に材料を付着させる装置
TWI803098B (zh) 離子源裝置
US5369337A (en) DC or HF ion source
JP2973058B2 (ja) 高真空・高速イオン処理装置
US20040217713A1 (en) Magnetron plasma source
JP2000317303A (ja) プラズマ処理装置及びこれを用いたプラズマ処理方法
JPH0544769B2 (cs)
WO2000003055A1 (en) Shield for ionized physical vapor deposition apparatus
JPH0770512B2 (ja) 低エネルギイオン化粒子照射装置
JP2777657B2 (ja) プラズマ付着装置
JPH0221296B2 (cs)
JPH01219161A (ja) イオン源
JP2552697B2 (ja) イオン源
JP2566602B2 (ja) イオン源
JP2832256B2 (ja) プラズマ付着装置
JPH01139762A (ja) スパッタリング装置
JP2621728B2 (ja) スパッタリング方法及びその装置
JPH0578849A (ja) 有磁場マイクロ波プラズマ処理装置
JPH0647723B2 (ja) スパッタリング方法及びその装置