JPH054358B2 - - Google Patents
Info
- Publication number
- JPH054358B2 JPH054358B2 JP62156263A JP15626387A JPH054358B2 JP H054358 B2 JPH054358 B2 JP H054358B2 JP 62156263 A JP62156263 A JP 62156263A JP 15626387 A JP15626387 A JP 15626387A JP H054358 B2 JPH054358 B2 JP H054358B2
- Authority
- JP
- Japan
- Prior art keywords
- quartz crucible
- silicon
- single crystal
- upper edge
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010453 quartz Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 15
- 229910052799 carbon Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 229910002090 carbon oxide Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15626387A JPS63319288A (ja) | 1987-06-23 | 1987-06-23 | 鍔付石英るつぼ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15626387A JPS63319288A (ja) | 1987-06-23 | 1987-06-23 | 鍔付石英るつぼ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63319288A JPS63319288A (ja) | 1988-12-27 |
JPH054358B2 true JPH054358B2 (zh) | 1993-01-19 |
Family
ID=15623981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15626387A Granted JPS63319288A (ja) | 1987-06-23 | 1987-06-23 | 鍔付石英るつぼ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63319288A (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0730693Y2 (ja) * | 1989-10-27 | 1995-07-12 | 三菱マテリアル株式会社 | シリコン単結晶引上げ用石英ルツボ |
JPH04236153A (ja) * | 1991-01-11 | 1992-08-25 | Nippon Densan Corp | スピンドルモータ |
JP2513641Y2 (ja) * | 1991-02-18 | 1996-10-09 | コマツ電子金属株式会社 | 半導体単結晶引上装置の黒鉛ルツボ |
JP5289294B2 (ja) * | 2009-12-14 | 2013-09-11 | 株式会社Sumco | シリコン単結晶引上げ用石英ルツボ |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5537460A (en) * | 1978-09-07 | 1980-03-15 | Sanyo Electric Co Ltd | Structure of crucible |
JPS5627244U (zh) * | 1979-08-07 | 1981-03-13 | ||
JPS6228880B2 (zh) * | 1979-08-20 | 1987-06-23 | Toshiba Kk |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6228880U (zh) * | 1985-08-02 | 1987-02-21 |
-
1987
- 1987-06-23 JP JP15626387A patent/JPS63319288A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5537460A (en) * | 1978-09-07 | 1980-03-15 | Sanyo Electric Co Ltd | Structure of crucible |
JPS5627244U (zh) * | 1979-08-07 | 1981-03-13 | ||
JPS6228880B2 (zh) * | 1979-08-20 | 1987-06-23 | Toshiba Kk |
Also Published As
Publication number | Publication date |
---|---|
JPS63319288A (ja) | 1988-12-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4330362A (en) | Device and process for pulling high-purity semiconductor rods from a melt | |
EP0229322A2 (en) | Method and apparatus for Czochralski single crystal growing | |
JPH0639351B2 (ja) | 単結晶棒の製造装置及び方法 | |
US5895527A (en) | Single crystal pulling apparatus | |
JP2580197B2 (ja) | 単結晶引上装置 | |
EP0435440B1 (en) | Method for growing antimony-doped silicon single crystals | |
JPS62138386A (ja) | 単結晶の引上装置 | |
JPH03115188A (ja) | 単結晶製造方法 | |
JPH054358B2 (zh) | ||
JP3750174B2 (ja) | 単結晶の製造装置および製造方法 | |
JP2937109B2 (ja) | 単結晶の製造装置および製造方法 | |
JP2002321997A (ja) | シリコン単結晶の製造装置及びそれを用いたシリコン単結晶の製造方法 | |
JP2783049B2 (ja) | 単結晶シリコン棒の製造方法及び製造装置 | |
JP2004123516A (ja) | 単結晶引上装置 | |
JP2835769B2 (ja) | Si単結晶製造用ルツボ | |
JP2520925B2 (ja) | シリコン単結晶中の酸素濃度制御方法 | |
JP3787452B2 (ja) | シリコン単結晶の製造方法 | |
JP2520926B2 (ja) | シリコン単結晶中の酸素濃度制御方法 | |
JP2705810B2 (ja) | 単結晶引上装置 | |
JP2580198B2 (ja) | 単結晶引上装置 | |
JP2504875B2 (ja) | 単結晶製造装置 | |
JP2785578B2 (ja) | シリコン単結晶の引上げ装置 | |
JPH0543381A (ja) | 溶融層法用単結晶成長装置及び該装置を用いた単結晶中の酸素濃度制御方法 | |
EP0221051A1 (en) | Method and apparatus for growing single crystal bodies | |
JP2558171Y2 (ja) | 単結晶引き上げ用熱遮蔽体 |