JPH0542820B2 - - Google Patents
Info
- Publication number
- JPH0542820B2 JPH0542820B2 JP56201247A JP20124781A JPH0542820B2 JP H0542820 B2 JPH0542820 B2 JP H0542820B2 JP 56201247 A JP56201247 A JP 56201247A JP 20124781 A JP20124781 A JP 20124781A JP H0542820 B2 JPH0542820 B2 JP H0542820B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- crystallinity
- infrared light
- impurities
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
Landscapes
- Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56201247A JPS58102536A (ja) | 1981-12-14 | 1981-12-14 | 半導体結晶評価法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56201247A JPS58102536A (ja) | 1981-12-14 | 1981-12-14 | 半導体結晶評価法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58102536A JPS58102536A (ja) | 1983-06-18 |
| JPH0542820B2 true JPH0542820B2 (enrdf_load_stackoverflow) | 1993-06-29 |
Family
ID=16437771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56201247A Granted JPS58102536A (ja) | 1981-12-14 | 1981-12-14 | 半導体結晶評価法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58102536A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4795260A (en) * | 1987-05-15 | 1989-01-03 | Therma-Wave, Inc. | Apparatus for locating and testing areas of interest on a workpiece |
| KR100711301B1 (ko) | 2004-05-07 | 2007-04-25 | 가부시키가이샤 리코 | 안정하게 원고를 이송할 수 있는 이송 벨트, 원고 이송장치 및 이 원고 이송 장치를 이용하는 화상 형성 장치 |
| JP2007288135A (ja) * | 2006-03-20 | 2007-11-01 | Kobe Steel Ltd | シリコン半導体薄膜の結晶性評価装置及び方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5487069U (enrdf_load_stackoverflow) * | 1977-12-02 | 1979-06-20 | ||
| JPS5950217B2 (ja) * | 1978-05-26 | 1984-12-07 | 株式会社日立製作所 | 半導体の不純物ド−ピング量評価法 |
| JPS56154648A (en) * | 1980-04-30 | 1981-11-30 | Fujitsu Ltd | Measurement of semiconductor impurity concentration |
-
1981
- 1981-12-14 JP JP56201247A patent/JPS58102536A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58102536A (ja) | 1983-06-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Tanaka et al. | New method of superheterodyne light beating spectroscopy for Brillouin scattering using frequency-tunable lasers | |
| US8912799B2 (en) | Accurate measurement of excess carrier lifetime using carrier decay method | |
| US20020045283A1 (en) | Method and apparatus for evaluating the quality of a semiconductor substrate | |
| Bosi et al. | Lifetime studies on the relaxed excited state of color centers | |
| US20040253751A1 (en) | Photothermal ultra-shallow junction monitoring system with UV pump | |
| Savvidis et al. | Asymmetric angular emission in semiconductor microcavities | |
| JPS63250835A (ja) | エピタキシヤルウエハの検査方法 | |
| Liaugaudas et al. | Luminescence-lifetime mapping in diamond | |
| JPH0542820B2 (enrdf_load_stackoverflow) | ||
| Garro et al. | Resonant Rayleigh scattering by excitonic states laterally confined in the interface roughnessof GaAs/Al x Ga 1− x As single quantum wells | |
| Dougherty et al. | Ultrafast carrier dynamics and intervalley scattering in ZnSe | |
| US5512999A (en) | Method for nondestructive measurement of dislocation density in GaAs | |
| Maslar et al. | Raman spectroscopy of n-type and p-type GaSb with multiple excitation wavelengths | |
| O'Neill et al. | Localized excitation transfer processes in MgO: Cr3+ | |
| CN115728250B (zh) | 一种半导体载流子动力学测试仪器及测试方法 | |
| JPH033946B2 (enrdf_load_stackoverflow) | ||
| JP2970818B2 (ja) | ビーム変調分光装置およびその測定方法 | |
| JP2740903B2 (ja) | 化合物半導体基板の評価方法 | |
| Mori et al. | Two-dimensional image detection of luminescence and transport properties of GaAs | |
| Tsang et al. | TIME RESOLVED RAMAN SPECTROSCOPY OF OPTICALLY GENERATED PHONONS IN III-V SEMICONDUCTORS | |
| Singer et al. | The two-photon phosphorescence excitation spectrum of triphenylene | |
| JPH01231341A (ja) | 半導体結晶評価装置 | |
| JP2000252338A (ja) | 半導体の評価方法および評価装置 | |
| SEMICONDUCTORS | Colloque C7, supplément au n 10, Tome 46, octobre 1985 page C7-235 | |
| EP3913356A1 (en) | A method for measuring the trap density in a 2-dimensional semiconductor material |