JPH0541549Y2 - - Google Patents

Info

Publication number
JPH0541549Y2
JPH0541549Y2 JP1987027017U JP2701787U JPH0541549Y2 JP H0541549 Y2 JPH0541549 Y2 JP H0541549Y2 JP 1987027017 U JP1987027017 U JP 1987027017U JP 2701787 U JP2701787 U JP 2701787U JP H0541549 Y2 JPH0541549 Y2 JP H0541549Y2
Authority
JP
Japan
Prior art keywords
wire
winding
spool
winding drum
surface roughness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1987027017U
Other languages
Japanese (ja)
Other versions
JPS63174442U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987027017U priority Critical patent/JPH0541549Y2/ja
Publication of JPS63174442U publication Critical patent/JPS63174442U/ja
Application granted granted Critical
Publication of JPH0541549Y2 publication Critical patent/JPH0541549Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/786Means for supplying the connector to be connected in the bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Storage Of Web-Like Or Filamentary Materials (AREA)
  • Wire Bonding (AREA)

Description

【考案の詳細な説明】 [産業上の利用分野] この考案は、半導体装置のボンデイングワイヤ
ーを巻き付けるためのスプールの改良に関するも
のである。
[Detailed Description of the Invention] [Industrial Application Field] This invention relates to an improvement of a spool for winding a bonding wire for a semiconductor device.

[従来の技術] 一般に、電子部品の材料として使用される半導
体装置のボンデイングワイヤー(以下、単にワイ
ヤーという)は、スプールに巻き付けた状態で運
搬や収納が行われるようになつており、ワイヤー
をスプールに巻き付ける方法としては、巻き付け
ピツチをワイヤーの直径と同一にして密に巻く方
法が知られている。ところがこの方法で多層巻き
付けると、上層のワイヤーが下層のワイヤーどう
しの間に食い込み、ワイヤーをスプールから繰り
出す際に支障を生じることがある。そこで、従
来、巻き付けピツチを大きくしてワイヤーどうし
の間隔を空け、上層のワイヤーを下層のワイヤー
に対して交叉させて巻き付けるいわゆるクロス巻
きと呼ばれる方法が採用されている。そして、こ
のようなクロス巻きに使用されるスプールとして
は、従来、両端部にフランジ部が形成されるとと
もに、ワイヤーが巻き付けられる巻胴が断面円形
になされ、かつ巻胴の直径が一定になされたもの
が使用されている。
[Prior Art] Generally, bonding wire for semiconductor devices (hereinafter simply referred to as wire) used as a material for electronic components is transported and stored while being wound around a spool. A known method for winding the wire is to tightly wind the wire by making the winding pitch the same as the diameter of the wire. However, when multiple layers are wound using this method, the wires in the upper layer may get stuck between the wires in the lower layer, which may cause trouble when the wire is paid out from the spool. Therefore, conventionally, a method called cross winding has been adopted in which the winding pitch is increased to leave a gap between the wires, and the wires in the upper layer are wound so as to cross over the wires in the lower layer. Conventionally, the spool used for such cross winding has flanges formed at both ends, and the winding drum around which the wire is wound has a circular cross section, and the diameter of the winding drum is constant. things are used.

ところで、ワイヤーは、その直径が25〜50μと
極めて細くまた軟らかいため、損傷を受け易く切
れ易い。このため、従来においては、スプールの
巻胴の表面粗さを0.2〜0.4Raに設定し、巻胴に巻
き付けた一層目のワイヤーに傷が付かないように
している。
By the way, the wire is extremely thin with a diameter of 25 to 50 μm and is soft, so it is easily damaged and broken. For this reason, conventionally, the surface roughness of the winding drum of the spool is set to 0.2 to 0.4 Ra to prevent the first layer of wire wound around the winding drum from being damaged.

[考案が解決しようとする問題点] ところが、上記従来のスプールにおいては、巻
き付けたワイヤーが運搬中等に弛むことがあり、
このような場合にワイヤーがずり落ちて絡んでし
まうという問題があつた。すなわち、ワイヤーは
所定の張力が付されて巻胴に巻き付けられ、この
張力によりワイヤーと巻胴とに摩擦力が生じてス
プールに保持される。ところが、上記スプールで
は、巻胴の表面を極めて平滑にしているから巻胴
とワイヤーとの間に生じる摩擦力が小さく、この
ため、ワイヤー全体がスプールの軸線方向へずれ
て弛み易くなつてしまうのである。
[Problems to be solved by the invention] However, in the above-mentioned conventional spool, the wound wire may loosen during transportation, etc.
In such cases, there was a problem that the wires would slip down and get tangled. That is, the wire is wound around the winding drum with a predetermined tension applied thereto, and this tension creates a frictional force between the wire and the winding drum, so that the wire is held on the spool. However, in the above-mentioned spool, since the surface of the winding drum is extremely smooth, the frictional force generated between the winding drum and the wire is small, and as a result, the entire wire tends to shift in the axial direction of the spool and become loose. be.

これに対して、巻付け張力を調整することも考
えられるが、近年、半導体装置の高集積化、小形
化が進み、半導体装置に用いられるワイヤーの線
径もこれに伴い細くなつてゆく傾向にあり、必然
的にワイヤーの耐力もこれに伴い低くなる傾向に
ある。したがつて、巻付け張力を大きくした結果
張力がワイヤーの耐力を越えると、ワイヤーの変
形や物性の変化が生じ好ましくない。
To deal with this, it is possible to adjust the winding tension, but in recent years, semiconductor devices have become more highly integrated and smaller, and the diameter of the wire used in semiconductor devices has also tended to become thinner. As a result, the yield strength of the wire tends to decrease accordingly. Therefore, if the winding tension is increased so that the tension exceeds the yield strength of the wire, the wire may be deformed or its physical properties may change, which is undesirable.

この考案は上記事情に鑑みてなされたもので、
ワイヤーの切断を未然に防止することができるの
は勿論のこと、ワイヤーの変形や物性変化を伴う
ことなく弛みの発生を防止することができ、した
がつて、ワイヤーの運搬や収納あるいは繰り出し
作業を円滑に行うことができる半導体装置のボン
デイングワイヤー用スプールを提供することを目
的とするものである。
This idea was made in view of the above circumstances,
Not only can it prevent the wire from breaking, but it can also prevent the occurrence of slack without deforming the wire or changing its physical properties. It is an object of the present invention to provide a spool for bonding wire of a semiconductor device that can be bonded smoothly.

[本考案の構成] この考案の半導体装置のボンデイングワイヤー
用スプールは、ワイヤーが巻き付けられる巻胴の
表面粗さを0.5〜2Raに設定して構成したもので
ある。この表面粗さの数値は、この考案の目的達
成にために最も適する値として極めて多数の実験
の結果得られたものであり、ボンデイングワイヤ
ー用スプールの巻胴とワイヤーとの間に必要な摩
擦力を与える下限値として0.5Ra、ワイヤーの損
傷を未然に防止する上限値として2Raを設定した
ものである。
[Structure of the present invention] The bonding wire spool of the semiconductor device of this invention is constructed by setting the surface roughness of the drum around which the wire is wound to 0.5 to 2 Ra. This surface roughness value was obtained through numerous experiments as the most suitable value for achieving the purpose of this invention, and is based on the frictional force required between the wire and the winding drum of the bonding wire spool. 0.5Ra is set as the lower limit to give the wire, and 2Ra is set as the upper limit to prevent damage to the wire.

[実施例] 以下、本考案の一実施例を第1図ないし第6図
を参照しながら説明する。第1図は実施例の半導
体装置のボンデイングワイヤー用スプール(以
下、この実施例では単にスプールという)を示す
斜視図である。この図に示すスプールは、円柱状
をなす本体1の両端部にフランジ部2,2が形成
され、フランジ部2,2の中間部が巻胴3とされ
たものであつて、巻胴3の表面粗さが0.5〜2Ra
に設定されたものである。このようなスプール
は、第2図に示すように、巻胴3にワイヤー4を
大きな間隔をもつて一層巻き付け、次いで、下層
のワイヤー4に対して上層のワイヤー4が交叉す
るように多層巻き付けて使用されるようになつて
いる。そして、このスプールにおいては、巻胴3
の表面粗さを0.5〜2Raに設定しているから、ワ
イヤーの損傷や弛みの発生みを未然に防止するこ
とができるのである。
[Embodiment] An embodiment of the present invention will be described below with reference to FIGS. 1 to 6. FIG. 1 is a perspective view showing a bonding wire spool (hereinafter simply referred to as spool in this embodiment) of a semiconductor device according to an embodiment. The spool shown in this figure has flanges 2, 2 formed at both ends of a cylindrical main body 1, and a winding drum 3 formed in the middle of the flanges 2, 2. Surface roughness is 0.5~2Ra
It is set to . As shown in FIG. 2, such a spool is made by winding the wire 4 around the winding drum 3 in one layer with large intervals, and then winding the wire 4 in multiple layers so that the wire 4 in the upper layer crosses the wire 4 in the lower layer. It is beginning to be used. In this spool, the winding drum 3
Since the surface roughness of the wire is set to 0.5 to 2Ra, it is possible to prevent wire damage and loosening.

巻胴の表面粗さは、従来、ワイヤーを傷付けな
いためにできるだけ小さい値であることが必要で
あるとされていた。しかし、本考案者等の鋭意研
究の結果、巻胴の表面粗さが0.5〜2Raの範囲で
あれば、ワイヤーを傷付けることが少なく、しか
もワイヤーと巻胴との間に必要な摩擦力を得るこ
とができるという知見を得たのである。すなわ
ち、巻き付けたワイヤーがくずれ易いか否かは、
巻胴の表面粗さとともに巻き付け張力、巻き付け
ピツチ、巻き付けたワイヤーの総重量等の条件に
よつて影響される。そこで本考案者等は、これら
諸条件を変化させてワイヤーを巻き付けたスプー
ルをその軸線方向へ一定時間振動させ、ワイヤー
がくずれる頻度を実験により求めた。
Conventionally, it has been thought that the surface roughness of the winding drum needs to be as small as possible in order to avoid damaging the wire. However, as a result of intensive research by the inventors of the present invention, it has been found that if the surface roughness of the winding drum is within the range of 0.5 to 2Ra, the wire will be less likely to be damaged, and the necessary frictional force between the wire and the winding drum can be obtained. I gained the knowledge that it is possible. In other words, whether the wrapped wire is easy to break or not,
It is affected by conditions such as the surface roughness of the winding drum, the winding tension, the winding pitch, and the total weight of the wire wound. Therefore, the present inventors varied these various conditions and vibrated the spool around which the wire was wound in the axial direction for a certain period of time, and determined through experiments the frequency at which the wire broke.

第3図は、巻き付けピツチが6mm、巻き付けた
ワイヤーの総重量が12g、巻き付け張力がそれぞ
れ1g、2g、3gという条件下において表面粗さを
変化させた場合のワイヤーがくずれる頻度を示す
線図である。また、第4図は巻き付け張力が2g、
ワイヤーの総重量が12g、巻付けピツチがそれぞ
れ3mm、6mm、9mm、さらに第5図は巻き付けピ
ツチが6mm、巻き付け張力が2g、ワイヤーの総
重量がそれぞれ6g、12g、18gという条件下にお
いて上記と同様の実験を行つた結果を示すもので
ある。なお、実験試料は直径20μのワイヤーを巻
胴に5層巻き付けたものを用いた。これらの図か
ら、巻付け張力、巻付けピツチおよびワイヤーの
総重量が変化しても表面粗さが0.5Ra以上のとき
にワイヤーがくずれる頻度が急激に減少すること
が判る。
Figure 3 is a diagram showing the frequency of wire breakage when the surface roughness is changed under the conditions that the winding pitch is 6 mm, the total weight of the wire wrapped is 12 g, and the winding tension is 1 g, 2 g, and 3 g, respectively. be. Also, in Figure 4, the winding tension is 2g,
The total weight of the wire is 12g, the winding pitch is 3mm, 6mm, and 9mm, respectively, and Figure 5 shows the above conditions under the conditions that the winding pitch is 6mm, the winding tension is 2g, and the total weight of the wire is 6g, 12g, and 18g, respectively. This shows the results of a similar experiment. The experimental sample used was a wire with a diameter of 20μ wound around a winding drum in five layers. From these figures, it can be seen that even if the winding tension, winding pitch, and total weight of the wire change, the frequency of wire breakage sharply decreases when the surface roughness is 0.5Ra or more.

また、巻き付けたワイヤーが損傷を受け易いか
否かは、巻胴の表面粗さとともに、巻付け張力の
大きさによつて影響される。そこで本考案者等
は、これらの条件を変化させてワイヤーを巻胴に
巻き付けた後にワイヤーを繰り出し、ワイヤーが
損傷を受ける頻度を実験により求めた。第6図は
巻き付けピツチが6mm、ワイヤーの総重量が
12g、巻き付け張力がそれぞれ1g、2g、3gという
条件下において表面粗さを変化させた場合のワイ
ヤーが損傷を受ける頻度を示す線図である。この
図から、巻付け張力が変化しても巻胴3の表面粗
さが2a以下であればワイヤーは損傷を受けない
ことが判る。
Furthermore, whether or not the wound wire is susceptible to damage is influenced by the surface roughness of the winding drum as well as the magnitude of the winding tension. Therefore, the inventors of the present invention changed these conditions, wound the wire around the winding drum, then let the wire out, and determined through experiments the frequency with which the wire was damaged. Figure 6 shows that the winding pitch is 6mm and the total weight of the wire is
12g, and the winding tension is 1g, 2g, and 3g, respectively, and is a diagram showing the frequency of damage to the wire when the surface roughness is changed. From this figure, it can be seen that even if the winding tension changes, the wire will not be damaged as long as the surface roughness of the winding drum 3 is 2a or less.

このように上記スプールにあつては、巻胴3の
表面粗さを0.5〜2Raに設定しているから、ワイ
ヤー4が損傷を受けにくく、しかも巻胴4とワイ
ヤー3との間に必要な摩擦力を与えることができ
る。したがつて、ワイヤー4の切断を未然に防止
することができるのは勿論のこと、ワイヤー4の
変形や物性変化を伴うことなく弛みの発生を防止
することができ、ワイヤー4の運搬や収納あるい
は繰り出し作業を円滑に行うことができる。
In this way, in the case of the above spool, the surface roughness of the winding drum 3 is set to 0.5 to 2Ra, so the wire 4 is less likely to be damaged, and the necessary friction between the winding drum 4 and the wire 3 is reduced. It can give you strength. Therefore, it is possible not only to prevent the wire 4 from being cut, but also to prevent the wire 4 from becoming loose without deforming or changing its physical properties. Unwinding work can be performed smoothly.

なお、上記実施例では巻胴3の断面形状を円形
としているのが、このような形状に限るものでは
なく、例えば楕円形等種々の形状としても上記実
施例と同様の効果を得ることができる。また、本
体1の両端部にフランジ部2,2を形成している
が、一端部のみに形成してもよい。
In addition, although the cross-sectional shape of the winding drum 3 is circular in the above embodiment, it is not limited to this shape, and the same effect as in the above embodiment can be obtained by using various shapes such as an ellipse. . Further, although the flange portions 2, 2 are formed at both ends of the main body 1, they may be formed only at one end.

[考案の効果] 以上説明したようにこの考案の半導体装置のボ
ンデイングワイヤー用スプールにおいては、ワイ
ヤーが巻き付けられる巻胴の表面粗さを0.5〜
2Raに設定しているから、ワイヤーが損傷を受け
にくくしかも巻胴とワイヤーとの間に必要な摩擦
力を与えることができる。したがつて、ワイヤー
の切断を未然に防止することができるのは勿論の
こと、ワイヤーの変形や物性変化を伴うことなく
弛みの発生を防止することができ、ワイヤーの運
搬や収納あるいは繰り出し作業を円滑に行うこと
ができるという効果が得られる。
[Effects of the invention] As explained above, in the bonding wire spool for semiconductor devices of this invention, the surface roughness of the drum around which the wire is wound is set to 0.5 to 0.5.
Since it is set to 2Ra, the wire is less likely to be damaged and can provide the necessary frictional force between the winding drum and the wire. Therefore, not only can the wire be prevented from breaking, but also the generation of slack can be prevented without deforming the wire or changing its physical properties, making it easier to carry, store, or unwind the wire. The effect is that the process can be carried out smoothly.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図ないし第6図は本考案の一実施例を示す
図であつて、第1図はスプールを示す斜視図、第
2図はスプールにワイヤーを巻き付けた状態を示
す側面図、第3図ないし第5図はそれぞれ巻胴の
表面粗さとワイヤーがくずれる頻度との関係を示
す線図、第6図は巻胴の表面粗さとワイヤーが損
傷を受ける頻度との関係を示す線図である。 3……巻胴、4……ワイヤー。
1 to 6 are views showing one embodiment of the present invention, in which FIG. 1 is a perspective view showing a spool, FIG. 2 is a side view showing a state in which the wire is wound around the spool, and FIG. 3 is a diagram showing an embodiment of the present invention. 5 to 5 are diagrams showing the relationship between the surface roughness of the winding drum and the frequency at which the wire breaks, and FIG. 6 is a diagram showing the relationship between the surface roughness of the winding drum and the frequency at which the wire is damaged. 3... Winding trunk, 4... Wire.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] ワイヤーが巻き付けられる巻胴の表面粗さを
0.5〜2Ra(ただしRaは中心線平均あらさを示す)
に設定してなることを特徴とする半導体装置のボ
ンデイングワイヤー用スプール。
The surface roughness of the winding drum around which the wire is wound
0.5~2Ra (Ra indicates center line average roughness)
A spool for bonding wire for semiconductor devices, characterized in that it is set to:
JP1987027017U 1987-02-25 1987-02-25 Expired - Lifetime JPH0541549Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987027017U JPH0541549Y2 (en) 1987-02-25 1987-02-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987027017U JPH0541549Y2 (en) 1987-02-25 1987-02-25

Publications (2)

Publication Number Publication Date
JPS63174442U JPS63174442U (en) 1988-11-11
JPH0541549Y2 true JPH0541549Y2 (en) 1993-10-20

Family

ID=30828654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987027017U Expired - Lifetime JPH0541549Y2 (en) 1987-02-25 1987-02-25

Country Status (1)

Country Link
JP (1) JPH0541549Y2 (en)

Also Published As

Publication number Publication date
JPS63174442U (en) 1988-11-11

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