JPH0539637Y2 - - Google Patents

Info

Publication number
JPH0539637Y2
JPH0539637Y2 JP7789086U JP7789086U JPH0539637Y2 JP H0539637 Y2 JPH0539637 Y2 JP H0539637Y2 JP 7789086 U JP7789086 U JP 7789086U JP 7789086 U JP7789086 U JP 7789086U JP H0539637 Y2 JPH0539637 Y2 JP H0539637Y2
Authority
JP
Japan
Prior art keywords
semiconductor substrate
insulating film
conductivity type
schottky barrier
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP7789086U
Other languages
English (en)
Japanese (ja)
Other versions
JPS62190360U (US20020095090A1-20020718-M00002.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7789086U priority Critical patent/JPH0539637Y2/ja
Publication of JPS62190360U publication Critical patent/JPS62190360U/ja
Application granted granted Critical
Publication of JPH0539637Y2 publication Critical patent/JPH0539637Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP7789086U 1986-05-23 1986-05-23 Expired - Lifetime JPH0539637Y2 (US20020095090A1-20020718-M00002.png)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7789086U JPH0539637Y2 (US20020095090A1-20020718-M00002.png) 1986-05-23 1986-05-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7789086U JPH0539637Y2 (US20020095090A1-20020718-M00002.png) 1986-05-23 1986-05-23

Publications (2)

Publication Number Publication Date
JPS62190360U JPS62190360U (US20020095090A1-20020718-M00002.png) 1987-12-03
JPH0539637Y2 true JPH0539637Y2 (US20020095090A1-20020718-M00002.png) 1993-10-07

Family

ID=30926323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7789086U Expired - Lifetime JPH0539637Y2 (US20020095090A1-20020718-M00002.png) 1986-05-23 1986-05-23

Country Status (1)

Country Link
JP (1) JPH0539637Y2 (US20020095090A1-20020718-M00002.png)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4703236B2 (ja) * 2005-03-31 2011-06-15 三洋電機株式会社 発光装置及びその製造方法
JP5543786B2 (ja) * 2008-01-09 2014-07-09 ローム株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPS62190360U (US20020095090A1-20020718-M00002.png) 1987-12-03

Similar Documents

Publication Publication Date Title
JP2760734B2 (ja) 縦方向導電性高出力mosfet
US3968360A (en) High resolution photoconductive array and process for fabricating same
JPH0539637Y2 (US20020095090A1-20020718-M00002.png)
JPH0621423A (ja) 赤外線検出装置及びその製造方法
US4079409A (en) Thyristor with pressure contacting
JPS5839073A (ja) アモルフアス太陽電池
US4095330A (en) Composite semiconductor integrated circuit and method of manufacture
JPH0547479Y2 (US20020095090A1-20020718-M00002.png)
JPS62213282A (ja) 無定形シリコン薄膜太陽電池製作時の短絡防止方法
US5229313A (en) Method of making a semiconductor device having multilayer structure
JP3116469B2 (ja) バンプ型電極の形成方法及び半導体装置の製造方法
US5111267A (en) Semiconductor device having a multilayer electrode structure and method for fabricating the same
JPS6337656A (ja) シヨツトキ−バリアダイオ−ド
JPH0644618B2 (ja) 半導体受光装置
JPS6066477A (ja) メサ形ダイオ−ドの製造方法
US4320571A (en) Stencil mask process for high power, high speed controlled rectifiers
JPH025307B2 (US20020095090A1-20020718-M00002.png)
JPS6115376A (ja) 基準電圧ダイオ−ド
JPH027472A (ja) 半導体装置
JPH08306701A (ja) 半導体装置
JPS61268072A (ja) 薄膜光電変換素子
JPH0629300A (ja) バンプ電極の電解めっき方法
JPH0371662U (US20020095090A1-20020718-M00002.png)
JPH07231112A (ja) 半導体放射線検出素子およびその製造方法
JPS6120368A (ja) プレ−ナ型半導体装置