JPH0539629Y2 - - Google Patents
Info
- Publication number
- JPH0539629Y2 JPH0539629Y2 JP8497187U JP8497187U JPH0539629Y2 JP H0539629 Y2 JPH0539629 Y2 JP H0539629Y2 JP 8497187 U JP8497187 U JP 8497187U JP 8497187 U JP8497187 U JP 8497187U JP H0539629 Y2 JPH0539629 Y2 JP H0539629Y2
- Authority
- JP
- Japan
- Prior art keywords
- reaction chamber
- wafer
- epitaxial growth
- atmosphere
- susceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 235000012431 wafers Nutrition 0.000 claims description 38
- 230000000903 blocking effect Effects 0.000 claims description 8
- 239000012780 transparent material Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 16
- 239000012535 impurity Substances 0.000 description 6
- 238000010926 purge Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8497187U JPH0539629Y2 (OSRAM) | 1987-05-29 | 1987-05-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8497187U JPH0539629Y2 (OSRAM) | 1987-05-29 | 1987-05-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63193831U JPS63193831U (OSRAM) | 1988-12-14 |
| JPH0539629Y2 true JPH0539629Y2 (OSRAM) | 1993-10-07 |
Family
ID=30939948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8497187U Expired - Lifetime JPH0539629Y2 (OSRAM) | 1987-05-29 | 1987-05-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0539629Y2 (OSRAM) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5849054B2 (ja) | 2010-02-15 | 2016-01-27 | プロダクティブ リサーチ エルエルシー． | 成形可能な軽量複合材料系および方法 |
-
1987
- 1987-05-29 JP JP8497187U patent/JPH0539629Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63193831U (OSRAM) | 1988-12-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5520743A (en) | Processing apparatus with means for rotating an object mounting means and a disk body located in the mounting means differently relative to each other | |
| JP4640879B2 (ja) | ウエハを処理する方法、及び半導体ウエハを処理するためのシステム | |
| JP4633269B2 (ja) | 基板処理装置及び半導体装置の製造方法 | |
| US6297172B1 (en) | Method of forming oxide film | |
| KR100918005B1 (ko) | 반도체 장치의 제조방법 및 기판처리장치 | |
| US4871416A (en) | Method and device for cleaning substrates | |
| TWI412084B (zh) | A substrate processing apparatus and a substrate processing method | |
| US4962726A (en) | Chemical vapor deposition reaction apparatus having isolated reaction and buffer chambers | |
| US8658247B2 (en) | Film deposition method | |
| US5478397A (en) | Heat treating device | |
| WO1996025760A1 (fr) | Procede et machine de fabrication de semiconducteurs | |
| JP4694209B2 (ja) | 基板処理装置及び半導体装置の製造方法 | |
| JPH05217929A (ja) | 酸化拡散処理装置 | |
| US8367560B2 (en) | Semiconductor device manufacturing method | |
| JPH0539629Y2 (OSRAM) | ||
| US5296412A (en) | Method of heat treating semiconductor wafers by varying the pressure and temperature | |
| KR100233190B1 (ko) | 반도체 장치의 제조방법 | |
| US20060003542A1 (en) | Method of oxidizing object to be processed and oxidation system | |
| JPS6224630A (ja) | 熱酸化膜形成方法及びその装置 | |
| JP3057515B2 (ja) | 縦型熱処理装置 | |
| JPS62140413A (ja) | 縦型拡散装置 | |
| JPH04290219A (ja) | 多結晶シリコン膜の形成方法 | |
| JPH04188721A (ja) | 縦型熱処理装置 | |
| KR100538270B1 (ko) | 반도체장치 제조용 확산공정설비 | |
| JPH0418728A (ja) | 絶縁膜形成方法 |