JPH0535574B2 - - Google Patents

Info

Publication number
JPH0535574B2
JPH0535574B2 JP60256364A JP25636485A JPH0535574B2 JP H0535574 B2 JPH0535574 B2 JP H0535574B2 JP 60256364 A JP60256364 A JP 60256364A JP 25636485 A JP25636485 A JP 25636485A JP H0535574 B2 JPH0535574 B2 JP H0535574B2
Authority
JP
Japan
Prior art keywords
adhesive tape
wafer
film
semiconductor wafer
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP60256364A
Other languages
Japanese (ja)
Other versions
JPS62115840A (en
Inventor
Takeshi Kuroda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Radio Co Ltd
Original Assignee
Japan Radio Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Radio Co Ltd filed Critical Japan Radio Co Ltd
Priority to JP60256364A priority Critical patent/JPS62115840A/en
Publication of JPS62115840A publication Critical patent/JPS62115840A/en
Publication of JPH0535574B2 publication Critical patent/JPH0535574B2/ja
Granted legal-status Critical Current

Links

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体ウエハの保管や運搬時におけ
る保護方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for protecting semiconductor wafers during storage and transportation.

〔従来技術〕[Prior art]

半導体ウエハは、各種プロセスによる素子形成
が完了すると、チツプに分割するためのダイシン
により割れ目が形成される。そして、そのウエハ
を適当に保護した状態で保管や運搬が行なわれ
る。
When semiconductor wafers are completed with device formation through various processes, cracks are formed by dicing to divide them into chips. The wafers are then stored and transported while being appropriately protected.

この保護方法としては、ダイシング済みの半導
体ウエハ1に対して、第2図に示すように、裏面
に粘着テープ2を貼着すると共に素子形成面、つ
まり表面にも粘着テープ3を貼着して包装する方
法が採られる。
This protection method involves attaching an adhesive tape 2 to the back surface of the diced semiconductor wafer 1, as shown in FIG. 2, and also attaching an adhesive tape 3 to the element forming surface, that is, the front surface. A packaging method is used.

そして、そのウエハ1の使用に際しては、包装
の状態でローラをかけて割れ目を完全に分割して
チツプ化し、その後に表面側の粘着テープ3を剥
離し、その後に、裏面側の粘着テープ2を伸ばし
て分割したチツプをその粘着テープ2から分離さ
せていた。なお、表面側には、粘着テープ3に代
えて剥離紙が使用されることもある。
When using the wafer 1, the wafer 1 is rolled while it is packaged to completely divide the cracks into chips, and then the adhesive tape 3 on the front side is peeled off, and then the adhesive tape 2 on the back side is peeled off. The stretched and divided chips were separated from the adhesive tape 2. Note that a release paper may be used instead of the adhesive tape 3 on the front side.

ところが、この従来の包装方法では、表面側の
粘着テープ3や剥離紙の粘着剤がウエハ1の表面
に残留することががあり、それを除去する別の手
間が必要となるという欠点があつた。また、表面
の粘着テープ3や剥離紙は素子の表面全部及び他
方の粘着テープ2にまで粘着するので、その剥離
に手間がかかるという問題もあつた。
However, this conventional packaging method has the disadvantage that the adhesive from the adhesive tape 3 on the front side and the adhesive from the release paper may remain on the surface of the wafer 1, requiring additional effort to remove it. . Furthermore, since the adhesive tape 3 and the release paper on the front surface adhere to the entire surface of the element and even the other adhesive tape 2, there was a problem in that it took time and effort to peel them off.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、粘着剤がウエハ表面に残留せ
ず、しかもその剥離を容易に行なうことができる
ようにした保護方法を提供することである。
SUMMARY OF THE INVENTION An object of the present invention is to provide a protection method that does not allow adhesive to remain on the wafer surface and can be easily peeled off.

〔発明の構成〕[Structure of the invention]

このため本発明では、半導体ウエハを、粘着テ
ープと別の粘着テープ又は剥離紙との間に挟着し
て保護するに際して、該半導体ウエハの素子形成
面を予めフイルムで被覆するようにした。
Therefore, in the present invention, when protecting a semiconductor wafer by sandwiching it between an adhesive tape and another adhesive tape or release paper, the element forming surface of the semiconductor wafer is covered with a film in advance.

〔実施例〕〔Example〕

以下、本発明の実施例について説明する。第1
図はその一実施例を示すものであり、第2図にお
けるものと同一のものには同一の符号を附した。
Examples of the present invention will be described below. 1st
The figure shows one embodiment, and the same parts as in FIG. 2 are given the same reference numerals.

本実施例では、半導体ウエハ1の素子形成面で
ある上面をフイルム4で完全に被覆した後に、そ
の上面に粘着テープ3を粘着するようにした。裏
面の粘着テープ2は従来と同様である。
In this embodiment, after the upper surface of the semiconductor wafer 1, which is the element forming surface, is completely covered with the film 4, the adhesive tape 3 is attached to the upper surface. The adhesive tape 2 on the back side is the same as the conventional one.

このフイルム4には、内部にカーボン等を混入
させ、導電性をもたせたものが使用される。
This film 4 has carbon or the like mixed therein to make it conductive.

以上により、半導体ウエハ1の表面は、粘着テ
ープ3がフイルム4を介して覆うようになるの
で、その粘着テープ3の剥離に際して、そのウエ
ハ1に粘着剤が残留するようなことはおこらな
い。また、剥離に際しては、下面側の粘着テープ
2に対する接着部のみを剥がせば良いので、その
剥離作業が容易となる。
As described above, the surface of the semiconductor wafer 1 is covered with the adhesive tape 3 via the film 4, so that no adhesive remains on the wafer 1 when the adhesive tape 3 is peeled off. Moreover, when peeling, it is only necessary to peel off the adhesive part to the adhesive tape 2 on the lower surface side, so the peeling operation becomes easy.

また、粘着テープ3の粘着直後の引き伸ばしの
ための刷毛かけ、或いは剥離の前段階でのウエハ
1の押し割に際し、静電気が発生してウエハ1に
形成された素子に悪い影響を及ぼすこと(特に
MOSトランジスタに対して)があるが、上記し
たようにフイルム4が導電特性を有するので、ウ
エハ1の表面がそのフイルム4によりシールドさ
れ、静電気により素子破壊が起こる恐れもない。
Furthermore, when brushing the adhesive tape 3 to stretch it immediately after adhering it, or when pushing and splitting the wafer 1 before peeling, static electricity is generated, which may have a negative effect on the elements formed on the wafer 1 (especially
However, since the film 4 has conductive properties as described above, the surface of the wafer 1 is shielded by the film 4, and there is no risk of device destruction due to static electricity.

なお、上面側の粘着テープ3は、剥離紙に代え
ることができる。
Note that the adhesive tape 3 on the upper surface side can be replaced with release paper.

〔発明の効果〕〔Effect of the invention〕

以上のように、本発明によれば、予めウエハの
表面にフイルムを被覆したので、そのウエハの素
子形成面に直接粘着テープ等が接触することはな
く、粘着剤の残留問題は起こらない。また、その
粘着テープの剥離も簡単となる。更に、フイルム
を導電性の材質のものにすれば、ウエハの表面側
の粘着テープ等で発生する静電気から、ウエハの
素子をシールドすることが可能となる。
As described above, according to the present invention, since the surface of the wafer is coated with a film in advance, the adhesive tape or the like does not come into direct contact with the element forming surface of the wafer, and the problem of residual adhesive does not occur. Moreover, the adhesive tape can be easily peeled off. Furthermore, if the film is made of a conductive material, it becomes possible to shield the elements on the wafer from static electricity generated by adhesive tape or the like on the front side of the wafer.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施例の包装保護説明のため
の断面図、第2図は従来の包装保護説明のための
断面図である。 1……半導体ウエハ、2,3……粘着テープ、
4……フイルム。
FIG. 1 is a cross-sectional view for explaining packaging protection according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view for explaining conventional packaging protection. 1... Semiconductor wafer, 2, 3... Adhesive tape,
4...Film.

Claims (1)

【特許請求の範囲】 1 半導体ウエハを、粘着テープと別の粘着テー
プ又は剥離紙との間に挟着して行なう保護方法に
おいて、 該半導体ウエハの素子形成面を予めフイルムで
被覆するようにしたことを特徴とする半導体ウエ
ハの保護方法。 2 上記フイルムが、導電性を有することを特徴
とする特許請求の範囲第1項記載の半導体ウエハ
の保護方法。
[Claims] 1. A protection method in which a semiconductor wafer is sandwiched between an adhesive tape and another adhesive tape or a release paper, wherein the element-forming surface of the semiconductor wafer is covered with a film in advance. A method for protecting a semiconductor wafer, characterized in that: 2. The method for protecting a semiconductor wafer according to claim 1, wherein the film is electrically conductive.
JP60256364A 1985-11-15 1985-11-15 Protecting method for semiconductor wafer Granted JPS62115840A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60256364A JPS62115840A (en) 1985-11-15 1985-11-15 Protecting method for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60256364A JPS62115840A (en) 1985-11-15 1985-11-15 Protecting method for semiconductor wafer

Publications (2)

Publication Number Publication Date
JPS62115840A JPS62115840A (en) 1987-05-27
JPH0535574B2 true JPH0535574B2 (en) 1993-05-26

Family

ID=17291654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60256364A Granted JPS62115840A (en) 1985-11-15 1985-11-15 Protecting method for semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS62115840A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0369135A (en) * 1989-08-08 1991-03-25 Nec Kyushu Ltd Adhesive sheet for semiconductor device manufacturing use

Also Published As

Publication number Publication date
JPS62115840A (en) 1987-05-27

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