JPH0535537B2 - - Google Patents
Info
- Publication number
- JPH0535537B2 JPH0535537B2 JP60115085A JP11508585A JPH0535537B2 JP H0535537 B2 JPH0535537 B2 JP H0535537B2 JP 60115085 A JP60115085 A JP 60115085A JP 11508585 A JP11508585 A JP 11508585A JP H0535537 B2 JPH0535537 B2 JP H0535537B2
- Authority
- JP
- Japan
- Prior art keywords
- ion
- ions
- cathode
- region
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 150000002500 ions Chemical class 0.000 claims description 108
- 238000009434 installation Methods 0.000 claims description 26
- 230000001133 acceleration Effects 0.000 claims description 18
- 238000010894 electron beam technology Methods 0.000 claims description 18
- 238000010586 diagram Methods 0.000 description 11
- 238000010884 ion-beam technique Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 230000005405 multipole Effects 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- 230000005596 ionic collisions Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/30—Nuclear fission reactors
Landscapes
- Electron Sources, Ion Sources (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60115085A JPS61273840A (ja) | 1985-05-28 | 1985-05-28 | 電子ビ−ム励起イオン照射装置 |
CA000510112A CA1252581A (fr) | 1985-05-28 | 1986-05-27 | Source de rayonnement d'ions par excitation au rayon d'electrons |
DE86107195T DE3688860T2 (de) | 1985-05-28 | 1986-05-27 | Mittels Elektronenstrahl angeregte Ionenstrahlquelle. |
EP86107195A EP0203573B1 (fr) | 1985-05-28 | 1986-05-27 | Source d'ions excitée par faisceau d'électrons |
US06/868,350 US4749910A (en) | 1985-05-28 | 1986-05-28 | Electron beam-excited ion beam source |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60115085A JPS61273840A (ja) | 1985-05-28 | 1985-05-28 | 電子ビ−ム励起イオン照射装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61273840A JPS61273840A (ja) | 1986-12-04 |
JPH0535537B2 true JPH0535537B2 (fr) | 1993-05-26 |
Family
ID=14653819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60115085A Granted JPS61273840A (ja) | 1985-05-28 | 1985-05-28 | 電子ビ−ム励起イオン照射装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61273840A (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2526228B2 (ja) * | 1987-01-31 | 1996-08-21 | 東京エレクトロン株式会社 | 電子ビ―ム式プラズマ装置 |
JPH0646559B2 (ja) * | 1987-06-05 | 1994-06-15 | 理化学研究所 | スパッタ中性粒子質量分析装置 |
JP2655146B2 (ja) * | 1987-07-22 | 1997-09-17 | 理化学研究所 | イオン照射装置 |
JPH0626197B2 (ja) * | 1987-08-24 | 1994-04-06 | 東京エレクトロン株式会社 | ドライエッチング装置 |
GB8905073D0 (en) * | 1989-03-06 | 1989-04-19 | Nordiko Ltd | Ion gun |
-
1985
- 1985-05-28 JP JP60115085A patent/JPS61273840A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS61273840A (ja) | 1986-12-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |