JPH05343658A - Package structure for solid-state image sensor - Google Patents

Package structure for solid-state image sensor

Info

Publication number
JPH05343658A
JPH05343658A JP4176085A JP17608592A JPH05343658A JP H05343658 A JPH05343658 A JP H05343658A JP 4176085 A JP4176085 A JP 4176085A JP 17608592 A JP17608592 A JP 17608592A JP H05343658 A JPH05343658 A JP H05343658A
Authority
JP
Japan
Prior art keywords
package
semiconductor chip
solid
mounting portion
protrusions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4176085A
Other languages
Japanese (ja)
Inventor
Hideaki Fujii
英昭 藤井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP4176085A priority Critical patent/JPH05343658A/en
Publication of JPH05343658A publication Critical patent/JPH05343658A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312Aligning
    • H01L2224/83136Aligning involving guiding structures, e.g. spacers or supporting members
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385Shape, e.g. interlocking features
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Abstract

PURPOSE:To accurately mount a semiconductor chip and to reduce its cost by forming protrusions of a predetermined height on a mounting part of a package. CONSTITUTION:Protrusions 17, 17,... of a predetermined height are formed on a mounting part 12 of a package 11 in a package structure. The protrusion 17 supports at least an outer periphery of a semiconductor chip 15. The protrusions 17 are so formed integrally with the package 11 that all heights from a reference surface (lower surface) 11a of the package 11 are constant. The chips 15 are placed on the ends of the protrusions 17 formed on the parts 12 of the package 11, and connected with adhesive 18 in this state. That is, if the heights of the protrusions 17 are formed constantly, the chips 15 are not obliquely mounted.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ビデオカメラや電子ス
チールカメラ等に搭載される固体撮像装置に係わり、特
にそのパッケージ構造に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device mounted on a video camera, an electronic still camera or the like, and more particularly to a package structure thereof.

【0002】[0002]

【従来の技術】図4は従来の固体撮像装置を示す側断面
図である。図示した固体撮像装置50において、51は
パッケージであり、このパッケージ51には実装部52
が設けられている。また、パッケージ51の実装部52
には所定量の接着剤53が塗布されており、この接着剤
53を介して半導体チップ54が接合されている。一
方、パッケージ51の両側にはそれぞれリード片55が
配置されており、各々のリード片55はワイヤ56を介
して半導体チップ54の電極パッド(不図示)に接続さ
れている。さらに、パッケージ51の上側開口部には透
明ガラス57が接合されている。
2. Description of the Related Art FIG. 4 is a side sectional view showing a conventional solid-state image pickup device. In the illustrated solid-state imaging device 50, reference numeral 51 denotes a package, and the package 51 has a mounting portion 52.
Is provided. In addition, the mounting portion 52 of the package 51
A predetermined amount of adhesive 53 is applied to the semiconductor chip 54, and the semiconductor chip 54 is bonded via the adhesive 53. On the other hand, lead pieces 55 are arranged on both sides of the package 51, and each lead piece 55 is connected to an electrode pad (not shown) of the semiconductor chip 54 via a wire 56. Further, transparent glass 57 is joined to the upper opening of the package 51.

【0003】[0003]

【発明が解決しようとする課題】しかしながら上記従来
の固体撮像装置50においては、パッケージ51の実装
部52が平面で形成されているため、チップ基準面(裏
面)に対する実装部52の平行度、並びに実装部52全
体の平面度が高精度に得られず、半導体チップ54が傾
いて実装されてしまうという問題があった。また、同じ
理由から、半導体チップ54を固定するための接着剤5
3の厚みがその粘度や塗布ムラによって不均一になり、
これが半導体チップ54に傾きを生じさせる一つの要因
になっていた。
However, in the above-mentioned conventional solid-state imaging device 50, since the mounting portion 52 of the package 51 is formed as a flat surface, the parallelism of the mounting portion 52 with respect to the chip reference surface (back surface), and There is a problem in that the flatness of the entire mounting portion 52 cannot be obtained with high accuracy, and the semiconductor chip 54 is inclined and mounted. For the same reason, the adhesive 5 for fixing the semiconductor chip 54 is also used.
The thickness of 3 becomes uneven due to its viscosity and coating unevenness,
This has been one of the factors that cause the semiconductor chip 54 to tilt.

【0004】その結果、固体撮像装置50を光学系に組
み込んだ際に、光学系の基準軸Zに対する半導体チップ
54の垂直度が許容範囲から外れてしまい、組み合わせ
後に垂直度の補正作業を必要としたり、そのための補正
機構が必要になるなど、種々の不都合が生じていた。そ
こで、半導体チップ54の実装精度を上げる対策として
は、パッケージ51の実装部52に研磨加工を施して上
述の平行度及び平面度を高める方法が考えられる。しか
し、この方法では、実装部52全面を均一にしかも精度
良く研磨するのに多大な手間と時間を必要とし、大幅な
コストアップを招いてしまう。
As a result, when the solid-state image pickup device 50 is incorporated into an optical system, the verticality of the semiconductor chip 54 with respect to the reference axis Z of the optical system deviates from the permissible range, and it is necessary to correct the verticality after combination. In addition, various inconveniences have occurred, such as a need for a correction mechanism for that. Therefore, as a measure for increasing the mounting accuracy of the semiconductor chip 54, a method of polishing the mounting portion 52 of the package 51 to increase the parallelism and flatness can be considered. However, this method requires a great deal of time and labor to uniformly and accurately polish the entire surface of the mounting portion 52, resulting in a significant cost increase.

【0005】本発明は、上記問題を解決するためになさ
れたもので、半導体チップを精度良く実装させることが
できる固体撮像装置のパッケージ構造を提供することを
目的とする。
The present invention has been made to solve the above problems, and an object of the present invention is to provide a package structure of a solid-state imaging device in which a semiconductor chip can be mounted with high accuracy.

【0006】[0006]

【課題を解決するための手段】本発明は、上記目的を達
成するためになされたもので、上面に撮像面が形成され
た半導体チップと、この半導体チップを実装するための
実装部が設けられたパッケージと、このパッケージの両
側に配置されたリード片とを有する固体撮像装置におい
て、上記パッケージの実装部に所定高さの突起が形成さ
れ、且つこの突起は少なくとも上記半導体チップの外周
部を支持する状態に配置されたものである。
The present invention has been made in order to achieve the above object, and is provided with a semiconductor chip having an image pickup surface formed on the upper surface and a mounting portion for mounting the semiconductor chip. In a solid-state imaging device having a package and lead pieces arranged on both sides of the package, a protrusion having a predetermined height is formed on a mounting portion of the package, and the protrusion supports at least an outer peripheral portion of the semiconductor chip. It is arranged in the state of doing.

【0007】[0007]

【作用】本発明の固体撮像装置のパッケージ構造におい
ては、パッケージの実装部に形成された突起の先端部に
半導体チップが載置され、この状態で半導体チップが接
着剤により接合されるため、突起の高ささえ一定に形成
されていれば半導体チップが傾いて実装されることはな
い。さらに、パッケージの実装部に塗布された接着剤
は、半導体チップの裏面側に確保される空間にスムース
に流れ広がるので、接着剤の粘度や塗布ムラによって半
導体チップが傾くこともない。
In the package structure of the solid-state image pickup device of the present invention, the semiconductor chip is placed on the tip of the protrusion formed on the mounting portion of the package, and the semiconductor chip is bonded by the adhesive in this state. As long as the height is constant, the semiconductor chip will not be inclined and mounted. Further, the adhesive applied to the mounting portion of the package smoothly spreads in the space secured on the back surface side of the semiconductor chip, so that the semiconductor chip does not tilt due to the viscosity of the adhesive or uneven application.

【0008】[0008]

【実施例】以下、本発明の固体撮像装置のパッケージ構
造に係わる実施例を図面に基づいて詳細に説明する。図
1は本発明の一実施例を示す側断面図であり、図2は同
部分平面図である。図示した固体撮像装置10におい
て、11はパッケージであり、このパッケージ11に
は、半導体チップを実装するための実装部12が設けら
れている。また、パッケージ11の両側にはそれぞれリ
ード片13が配置されており、各々のリード片13は、
ワイヤ14を介して半導体チップ15の電極パッド(不
図示)に接続されている。さらに、半導体チップ15の
上面には図示せぬ撮像面が形成されており、この撮像面
の上方を覆うかたちでパッケージ11の上側開口部に透
明ガラス16が接合されている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments relating to the package structure of the solid-state image pickup device of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a side sectional view showing an embodiment of the present invention, and FIG. 2 is a partial plan view of the same. In the illustrated solid-state imaging device 10, reference numeral 11 denotes a package, and the package 11 is provided with a mounting portion 12 for mounting a semiconductor chip. Further, the lead pieces 13 are arranged on both sides of the package 11, and each lead piece 13 is
It is connected to the electrode pad (not shown) of the semiconductor chip 15 via the wire 14. Further, an imaging surface (not shown) is formed on the upper surface of the semiconductor chip 15, and the transparent glass 16 is bonded to the upper opening of the package 11 so as to cover the imaging surface.

【0009】本実施例のパッケージ構造においては、パ
ッケージ11の実装部12に所定高さの突起17、17
・・が形成されている。これらの突起17は、例えばパ
ッケージ11の実装部12において略半球状に突出して
形成されており、半導体チップ15の外周部に8個と、
その中心部に1個位置するようにして、合計9個で構成
されている。この構成により突起17は少なくとも半導
体チップ15の外周部を支持する状態となる。また、こ
れらの突起17は、パッケージ11の基準面(下面)1
1aからの高さが全て一定となるように、パッケージ1
1と一体に形成されている。
In the package structure of this embodiment, the mounting portion 12 of the package 11 has protrusions 17, 17 having a predetermined height.
.. is formed. These protrusions 17 are formed, for example, in a substantially hemispherical shape on the mounting portion 12 of the package 11, and eight protrusions 17 are formed on the outer peripheral portion of the semiconductor chip 15.
A total of nine pieces are arranged so that one piece is located in the central portion. With this configuration, the protrusion 17 is in a state of supporting at least the outer peripheral portion of the semiconductor chip 15. Further, these protrusions 17 serve as the reference surface (lower surface) 1 of the package 11.
Package 1 so that the height from 1a is constant.
It is formed integrally with 1.

【0010】続いて、上記構造をなすパッケージ11の
実装部12に半導体チップ15を実装する場合の手順に
ついて、図1、図2を参照しながら説明する。まず第1
の工程では、パッケージ11の実装部12に、ディスペ
ンサ等を使用して接着剤18を塗布する。続いて第2の
工程では、コレット或いは専用チャックを用いて半導体
チップ15をピックアップし、そのままパッケージ11
の上方まで半導体チップ15を移動させる。次いで第3
の工程では、パッケージ11の実装部12に形成された
各突起17の先端部に半導体チップ15を載置するとと
もに、所定の圧力で半導体チップ15を突起17側に押
圧する。この時、実装部12に塗布された接着剤18
は、半導体チップ15の裏面側に確保される空間に流れ
広がる。以上の手順によって半導体チップ15はパッケ
ージ11に実装される。
Next, a procedure for mounting the semiconductor chip 15 on the mounting portion 12 of the package 11 having the above structure will be described with reference to FIGS. First of all
In the step (2), the adhesive 18 is applied to the mounting portion 12 of the package 11 using a dispenser or the like. Subsequently, in the second step, the semiconductor chip 15 is picked up by using a collet or a dedicated chuck, and the package 11 is directly used.
The semiconductor chip 15 is moved to above. Then the third
In the step (1), the semiconductor chip 15 is placed on the tip of each protrusion 17 formed on the mounting portion 12 of the package 11, and the semiconductor chip 15 is pressed toward the protrusion 17 with a predetermined pressure. At this time, the adhesive 18 applied to the mounting portion 12
Flows and spreads in a space secured on the back surface side of the semiconductor chip 15. The semiconductor chip 15 is mounted on the package 11 by the above procedure.

【0011】このように本実施例のパッケージ構造にお
いては、パッケージ11の実装部12に形成された突起
7の先端部に半導体チップ15が載置されるとともに、
その実装部12に塗布された接着剤18によって半導体
チップ15が接合される。したがって、基準面11aか
ら各突起17までの高ささえ一定に形成されていれば、
半導体チップ15が傾いて実装されることはない。さら
に、半導体チップ15の実装時には、実装部12に塗布
された接着剤18が半導体チップ15の裏面側に確保さ
れる空間にスムースに流れ広がるため、接着剤18の粘
度や塗布ムラによって半導体チップ15が傾くこともな
い。以上のことから、半導体チップ15はパッケージ1
1の実装部12に精度良く実装されるようになる。
As described above, in the package structure of this embodiment, the semiconductor chip 15 is placed on the tip of the protrusion 7 formed on the mounting portion 12 of the package 11, and
The semiconductor chip 15 is joined by the adhesive 18 applied to the mounting portion 12. Therefore, as long as the height from the reference surface 11a to each protrusion 17 is constant,
The semiconductor chip 15 is never mounted tilted. Furthermore, at the time of mounting the semiconductor chip 15, the adhesive 18 applied to the mounting portion 12 smoothly spreads into the space secured on the back surface side of the semiconductor chip 15, so that the semiconductor chip 15 may have viscosity or uneven application. Does not tilt. From the above, the semiconductor chip 15 is the package 1
The first mounting unit 12 can be mounted with high accuracy.

【0012】なお、本実施例のパッケージ構造では、半
導体チップ15が9個の突起17で支持されるようにな
っているが、実装部12に形成される突起17の構成と
しては、例えば図2においてハッチングが描かれた4個
の突起17だけで半導体チップ15の外周部の4隅を支
持するものであってもよい。つまり、突起17の構成と
しては、半導体チップ15を安定且つ確実に支持できる
ものであればよく、そのための条件としては、少なくと
も突起17が半導体チップ15の外周部を支持すること
が挙げられる。
In the package structure of this embodiment, the semiconductor chip 15 is supported by the nine protrusions 17, but the protrusions 17 formed on the mounting portion 12 can be configured, for example, as shown in FIG. It is also possible to support the four corners of the outer peripheral portion of the semiconductor chip 15 only by the four projections 17 with hatching. That is, the structure of the protrusion 17 may be one that can stably and reliably support the semiconductor chip 15, and the condition therefor is that at least the protrusion 17 supports the outer peripheral portion of the semiconductor chip 15.

【0013】よって、本発明に係わるパッケージ構造と
しては、突起17の形状や数に限定されないことは言う
までもなく、その他の実施例としては、例えば図3に示
すように、パッケージ11の実装部12に細長半円状の
突起17、17・・を形成するとともに、これらの突起
17で半導体チップ15の外周部を支持するようにした
ものなど、種々の態様が考えられる。
Therefore, it goes without saying that the package structure according to the present invention is not limited to the shape and the number of the protrusions 17, and as another embodiment, for example, as shown in FIG. Various modes are conceivable, such as forming elongated semicircular projections 17, 17 ... And supporting the outer peripheral portion of the semiconductor chip 15 by these projections 17.

【0014】[0014]

【発明の効果】以上、説明したように本発明によれば、
半導体チップがパッケージに精度良く実装されるように
なるため、固体撮像装置を光学系に組み込んだ後に位置
的な精度補正を行う必要がなくなる。よって、そのため
の時間と手間が取り除かれるとともに、その補正作業用
に設けられる機構も不要となってトータル的な部品点数
の削減が可能となる。また、より高い実装精度を得るた
めに研磨加工を行う場合でも、突起の先端部を研磨する
だけで済むようになるため、精度的にも、またそれに費
やされる手間や時間の面でも非常に有利である。
As described above, according to the present invention,
Since the semiconductor chip is mounted on the package with high accuracy, it is not necessary to perform positional accuracy correction after incorporating the solid-state imaging device into the optical system. Therefore, the time and labor for that are eliminated, and the mechanism provided for the correction work is not required, and the total number of parts can be reduced. Also, even when polishing is performed to obtain higher mounting accuracy, it is only necessary to polish the tip of the protrusion, which is very advantageous in terms of accuracy and the labor and time spent there. Is.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を示す側断面図である。FIG. 1 is a side sectional view showing an embodiment of the present invention.

【図2】図1の部分平面図である。FIG. 2 is a partial plan view of FIG.

【図3】他の実施例を説明する図である。FIG. 3 is a diagram illustrating another embodiment.

【図4】従来例を示す側断面図である。FIG. 4 is a side sectional view showing a conventional example.

【符号の説明】[Explanation of symbols]

10 固体撮像装置 11 パ
ッケージ 12 実装部 13 リ
ード片 15 半導体チップ 17 突
10 Solid-state imaging device 11 Package 12 Mounting part 13 Lead piece 15 Semiconductor chip 17 Protrusion

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 上面に撮像面が形成された半導体チップ
と、この半導体チップを実装するための実装部が設けら
れたパッケージと、このパッケージの両側に配置された
リード片とを有する固体撮像装置において、 前記パッケージの実装部に所定高さの突起が形成され、
且つ前記突起は少なくとも前記半導体チップの外周部を
支持する状態に配置されたことを特徴とする固体撮像装
置のパッケージ構造。
1. A solid-state imaging device having a semiconductor chip having an imaging surface formed on an upper surface thereof, a package provided with a mounting portion for mounting the semiconductor chip, and lead pieces arranged on both sides of the package. In, the protrusion of a predetermined height is formed in the mounting portion of the package,
Further, the package structure of the solid-state imaging device, wherein the protrusion is arranged so as to support at least an outer peripheral portion of the semiconductor chip.
JP4176085A 1992-06-09 1992-06-09 Package structure for solid-state image sensor Pending JPH05343658A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4176085A JPH05343658A (en) 1992-06-09 1992-06-09 Package structure for solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4176085A JPH05343658A (en) 1992-06-09 1992-06-09 Package structure for solid-state image sensor

Publications (1)

Publication Number Publication Date
JPH05343658A true JPH05343658A (en) 1993-12-24

Family

ID=16007459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4176085A Pending JPH05343658A (en) 1992-06-09 1992-06-09 Package structure for solid-state image sensor

Country Status (1)

Country Link
JP (1) JPH05343658A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5773323A (en) * 1995-04-27 1998-06-30 Lg Semicon Co., Ltd. Package for solid state image sensing device and method for manufacturing thereof
WO2001059828A2 (en) * 2000-02-14 2001-08-16 Epcos Ag Building component with constant distorsion-free bonding, and method for bonding
WO2002091474A1 (en) * 2001-05-09 2002-11-14 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device and its manufacturing method
JP2006332686A (en) * 2006-07-03 2006-12-07 Matsushita Electric Ind Co Ltd Solid-state imaging device
JP2007180164A (en) * 2005-12-27 2007-07-12 Fujifilm Corp Package for solid state imaging element
JP2008205057A (en) * 2007-02-19 2008-09-04 Matsushita Electric Ind Co Ltd Semiconductor device and manufacturing method therefor
US7586529B2 (en) 2003-10-23 2009-09-08 Panasonic Corporation Solid-state imaging device
JP2013240043A (en) * 2012-05-14 2013-11-28 Samsung Electro-Mechanics Co Ltd Apparatus and method of manufacturing camera module
JP2017011217A (en) * 2015-06-25 2017-01-12 シャープ株式会社 Solid-state imaging device and camera module

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5773323A (en) * 1995-04-27 1998-06-30 Lg Semicon Co., Ltd. Package for solid state image sensing device and method for manufacturing thereof
WO2001059828A2 (en) * 2000-02-14 2001-08-16 Epcos Ag Building component with constant distorsion-free bonding, and method for bonding
WO2001059828A3 (en) * 2000-02-14 2002-02-28 Epcos Ag Building component with constant distorsion-free bonding, and method for bonding
WO2002091474A1 (en) * 2001-05-09 2002-11-14 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device and its manufacturing method
US7125754B2 (en) 2001-05-09 2006-10-24 Shindengen Electric Manufacturing Co., Ltd. Semiconductor device and its manufacturing method
US7719585B2 (en) 2003-10-23 2010-05-18 Panasonic Corporation Solid-state imaging device
US7586529B2 (en) 2003-10-23 2009-09-08 Panasonic Corporation Solid-state imaging device
JP2007180164A (en) * 2005-12-27 2007-07-12 Fujifilm Corp Package for solid state imaging element
JP2006332686A (en) * 2006-07-03 2006-12-07 Matsushita Electric Ind Co Ltd Solid-state imaging device
JP2008205057A (en) * 2007-02-19 2008-09-04 Matsushita Electric Ind Co Ltd Semiconductor device and manufacturing method therefor
JP2013240043A (en) * 2012-05-14 2013-11-28 Samsung Electro-Mechanics Co Ltd Apparatus and method of manufacturing camera module
CN103428413A (en) * 2012-05-14 2013-12-04 三星电机株式会社 Apparatus and method for manufacturing camera module
JP2017011217A (en) * 2015-06-25 2017-01-12 シャープ株式会社 Solid-state imaging device and camera module

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