JPH05343655A - Solid-state image sensor - Google Patents

Abstract

PURPOSE:To reduce generation of a false signal by decreasing a long wavelength bandwidth transmission factor of 700nm or longer at least by a light-receiving surface side of a package. CONSTITUTION:A solid-state image sensing element 1 is fixed onto an island 20, electrodes of the element 1 are electrically connected to inner leads 21 via fine metal wirings 30, and then sealed by transparent sealing resin 22a to form a resin-sealed solid-state image sensor. In order to prevent an unnecessary incident light of 700nm or longer from reaching the element 1, the resin is dyed with red color. Thus, since transmittance in the range of 700-1100nm becomes much less than in the visible region, e.g. at 550nm, generation of a false signal due to infrared light can be suppressed. Even if an infrared cut-off filter 23 is attached to a surface of a transparent sealing resin 22 (light-receiving surface side of the element 1), the transmittance in a long wavelength band can be reduced.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device,
In particular, it relates to a solid-state imaging device in which a light receiving element and the like are integrated on a silicon substrate.

[0002]

2. Description of the Related Art FIG. 4 is a sectional view showing a conventional ceramic package type solid-state image pickup device.

A solid-state image pickup device 1 (a chip having a silicon substrate on which a light receiving element and a CCD register are formed) is fixed to the central portion of a ceramic substrate 10 with the light receiving portion facing upward.

An electrode (not shown) is provided around the light receiving portion of the solid-state image pickup device 1. The electrode and the internal lead 11 provided on the ceramic substrate 10 are connected to the thin metal wire 30.
Are electrically connected by. This internal lead 11
The external leads 13 are formed on the sides of the ceramic base 10 by the metal paste material 12. Above the solid-state imaging device 1, a low melting glass 14 or a glass cap 15 (glass plate) sealed to the ceramic substrate 10 with a thermosetting resin is used for sealing. The solid-state imaging device 1 detects the light transmitted through the glass cap 15 by a light receiving portion (photodiode), converts the light into an electric signal, and outputs the electric signal to an external lead.

FIG. 5 is a sectional view showing a conventional resin-sealed solid-state image pickup device.

The solid-state image pickup device 1 is fixed on the island portion 20 with its light receiving portion facing upward. The electrodes of the solid-state imaging device 1 and the internal leads 21 are electrically connected to each other by the thin metal wires 31. After that, the solid-state imaging device 1, the internal leads 21, and the like are molded and encapsulated by the transparent sealing resin 22, and the solid-state imaging device is formed. The solid-state image sensor converts the light that has passed through the transparent sealing resin 22 and is incident on the light receiving portion (photodiode) into an electric signal.

[0007]

However, in the above-mentioned conventional solid-state image pickup device, the wavelength band required as a signal is a visible light region of 400 to 700 nm, whereas the conventional ceramic package type solid-state image pickup device having a glass cap. And the resin-encapsulated solid-state imaging device, 700 to 15
Since the transmittance up to 00 nm has a value similar to that in the visible light range, even light in an unnecessary wavelength range reaches the solid-state image sensor. As a property of silicon forming the solid-state image pickup device, light having a longer wavelength reaches a deeper portion than the surface of the solid-state image pickup device. Therefore, as shown in FIG. 6A, the photodiode of the solid-state image pickup device (selected for the P-type silicon substrate 41). The photoelectric effect is generated in the deep portion (having the N-type diffusion layer 42 that has been formed). Some of the electrons e generated by the photoelectric effect are generated in the photodiode deep portion (P-type silicon substrate 41) and reach not only the photodiode on which the light is incident but also the N-type diffusion layer 42 of the adjacent photodiode. As a result, the output electric signal of the solid-state imaging device is shown in FIG.
As shown in (b), a false signal appears next to the light incident bit. It has been confirmed that this false signal may cause malfunction when the function of the system using the solid-state imaging device is deteriorated or significant.

[0008]

The present invention provides a solid-state image sensor having a solid-state image sensor and a package having a transparent member on the light-receiving surface side of the solid-state image sensor. Wavelength 550 at 700-1100 nm
It is lower than the value for nm.

[0009]

Embodiments of the present invention will now be described with reference to the accompanying drawings.

FIG. 1 is a sectional view showing a first embodiment of the present invention.

The solid-state image pickup device 1 is fixed on the island portion 20, and the electrodes of the solid-state image pickup device 1 are metal thin wires 3.
After being electrically connected to the internal lead 21 by 0, it is encapsulated by a transparent sealing resin 22a to form a resin-sealed solid-state imaging device.

In the present embodiment, in order to prevent unnecessary incident light of 700 nm or more from reaching the solid-state image pickup device 1, the resin is dyed red to reduce the transmittance in the long wavelength region. As a sealing resin material dyed red, M-100 (trade name) manufactured by Sumitomo Chemical was used. The M-100 in FIG.
Is used as a spectral transmittance curve of the sealing resin 22a. However, the thickness of the solid-state image sensor 1 on the surface is 0.8 mm. Since the transmittance in the wavelength range of 800 to 1100 nm is significantly smaller than the value (94%) for light in the visible range, for example, 550 nm, generation of a false signal due to infrared light can be suppressed.

FIG. 3 is a sectional view showing a second embodiment of the present invention.

In this embodiment, the conventional transparent sealing resin 22 is used.
The infrared cut filter 23 is attached to the surface (the light receiving surface side of the solid-state image sensor 1) to reduce the transmittance in the long wavelength region. The present embodiment has an advantage that the transmittance in the long wavelength region can be reduced by simply attaching a filter in the final step without changing the method for manufacturing the resin-sealed solid-state imaging device.

A filter may be attached to the surface of the glass cap 15 of the ceramic type solid-state image pickup device shown in FIG.

[0016]

As described above, according to the present invention, in the solid-state image pickup device, at least the light receiving surface side of the package 70
By reducing the transmittance in the long wavelength region of 0 nm or more, it is possible to reduce the occurrence of false signals.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a first embodiment of the present invention.

FIG. 2 is a graph showing the spectral transmittance of the sealing resin in the first embodiment.

FIG. 3 is a sectional view showing a second embodiment of the present invention.

FIG. 4 is a sectional view showing a conventional ceramic package type solid-state imaging device.

FIG. 5 is a cross-sectional view showing a conventional resin-sealed solid-state imaging device.

6A and 6B are a cross-sectional view (FIG. 6A) and a signal waveform diagram (FIG. 6B) used for explaining generation of a false signal by infrared light.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Solid-state image sensor 10 Ceramic base 11 Internal lead 12 Metal paste material 13 External lead 14 Low melting point glass 15 Glass cap 20 Island 21 Internal lead 22,22a Sealing resin 23 Filter 30 Metal wire 41 P-type silicon substrate 42 N-type diffusion layer 43 channel stopper

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification code Office reference number FI technical display location H04N 1/028 Z 9070-5C 5/335 V

Claims (3)

[Claims] 1. In a solid-state image sensor having a solid-state image sensor and a package in which a transparent member is disposed on the light-receiving surface side of the solid-state image sensor, the transmittance of the transparent member is in a wavelength range 700.
A solid-state imaging device having a wavelength of ˜1100 nm which is lower than a value for a wavelength of 550 nm. 2. The solid-state imaging device according to claim 1, wherein the package body is a red transparent resin. 3. The solid-state imaging device according to claim 1, wherein the transparent member is a glass plate and a filter attached to the surface thereof.