JPH05343455A - Mold for resin-sealing semiconductor device - Google Patents
Mold for resin-sealing semiconductor deviceInfo
- Publication number
- JPH05343455A JPH05343455A JP15020792A JP15020792A JPH05343455A JP H05343455 A JPH05343455 A JP H05343455A JP 15020792 A JP15020792 A JP 15020792A JP 15020792 A JP15020792 A JP 15020792A JP H05343455 A JPH05343455 A JP H05343455A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- cavity
- runner
- volume
- mold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title abstract description 17
- 238000007789 sealing Methods 0.000 title abstract description 13
- 239000011347 resin Substances 0.000 claims abstract description 71
- 229920005989 resin Polymers 0.000 claims abstract description 71
- 238000000465 moulding Methods 0.000 abstract description 8
- 238000002347 injection Methods 0.000 abstract description 4
- 239000007924 injection Substances 0.000 abstract description 4
- 230000001105 regulatory effect Effects 0.000 abstract 4
- 239000011800 void material Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/17—Component parts, details or accessories; Auxiliary operations
- B29C45/26—Moulds
- B29C45/27—Sprue channels ; Runner channels or runner nozzles
- B29C45/2701—Details not specific to hot or cold runner channels
- B29C45/2703—Means for controlling the runner flow, e.g. runner switches, adjustable runners or gates
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、リードフレームに半導
体チップが搭載される構成品を樹脂封止する半導体装置
樹脂封止用金型に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin device molding die for a semiconductor device for resin-molding a component on which a semiconductor chip is mounted on a lead frame.
【０００２】[0002]
【従来の技術】図２は従来の半導体装置樹脂封止用金型
の一例を説明するための下型を示す斜視図である。2. Description of the Related Art FIG. 2 is a perspective view showing a lower mold for explaining an example of a conventional semiconductor device resin sealing mold.
【０００３】従来の半導体装置樹脂封止用金型は、上型
と下型とで構成され、一度に複数の半導体装置が樹脂封
止されるように、互いに合せ面には半導体装置の外郭体
を形成する窪みをもつともにこの窪みが互いに合わせて
キャビティを形成している。A conventional semiconductor device resin encapsulation mold is composed of an upper die and a lower die, and the outer surface of the semiconductor device is placed on the mating surfaces so that a plurality of semiconductor devices are resin-encapsulated at one time. And the depressions are aligned with each other to form a cavity.
【０００４】また、下型は図２に示すように、上型の窪
みと対応してキャビティを形成する窪み６ａ〜６ｈが２
列に並べて形成され、その窪みの間には溶融樹脂が流れ
る径路であるランナ１と、窪み６ａ，６ｅ側にあって溶
融樹脂を貯める樹脂溜り室４と、上型の面と間隙部１４
を隔てて樹脂溜り室４とランナ１とを仕切る流量制限ゲ
ート１３とを有している。Further, as shown in FIG. 2, the lower mold has two recesses 6a to 6h forming a cavity corresponding to the recesses of the upper mold.
A runner 1 which is formed in a row and is a path through which molten resin flows between the recesses, a resin reservoir chamber 4 on the recesses 6a and 6e side for storing the molten resin, a surface of the upper mold and a gap portion 14
It has a flow rate limiting gate 13 that separates the resin reservoir chamber 4 and the runner 1 with a space therebetween.
【０００５】次に、この金型における樹脂封止過程を説
明する。いま、図２における紙面の左側よりランナ１内
へ樹脂が注入されるとすると、まずランナ１の上流側の
窪み６ｄ，６ｈで形成されるそれぞれのキャビティに樹
脂が充填され始める。更にランナ１の最終端まで樹脂が
流入してくると、ランナ１の末端部にある窪み６ａ，６
ｅで形成されるキャビティにも樹脂が注入される。そし
て、流量制限ゲート１３によってランナ１を流れる樹脂
は一時的に阻止され、樹脂が供給されるに従って、樹脂
は流量制限ゲート１３の上の間隙部１４と通って、少量
ずつ樹脂溜り室４内に充填される。Next, the resin sealing process in this mold will be described. Now, assuming that the resin is injected into the runner 1 from the left side of the paper surface in FIG. 2, the respective cavities formed by the depressions 6d and 6h on the upstream side of the runner 1 are first filled with the resin. When the resin further flows into the final end of the runner 1, the depressions 6a, 6 at the end of the runner 1
The resin is also injected into the cavity formed by e. Then, the resin that flows through the runner 1 is temporarily blocked by the flow rate limiting gate 13, and as the resin is supplied, the resin passes through the gap portion 14 above the flow rate limiting gate 13 into the resin reservoir chamber 4 little by little. Is filled.
【０００６】このようにランナ１の末端部にあるキャビ
ティに加わる樹脂注入圧力は、間隙部１４と通して樹脂
溜り室４へ逃げることにより上昇が抑制され、ランナ１
の末端部におけるキャビティの急激な樹脂注入圧上昇よ
って発生するジェッティング現象を防止し、この現象に
よるボイドの発生やワイヤー変形等の樹脂封止不良発生
を避けてきた。[0006] As described above, the resin injection pressure applied to the cavity at the end of the runner 1 is suppressed by rising through the gap portion 14 to the resin reservoir chamber 4 and the runner 1 is suppressed.
The jetting phenomenon caused by the rapid increase of the resin injection pressure in the cavity at the end of the is prevented, and the occurrence of voids due to this phenomenon and defective resin sealing such as wire deformation have been avoided.
【０００７】[0007]
【発明が解決しようとする課題】この従来の半導体装置
樹脂封止用金型では、流量制限ゲート上の間隙量およ
び、樹脂溜り室の容積と変えることができないため次の
ような問題が生じていた。金型製作当初または、樹脂の
種類や成形条件ならびにワイヤのボンディングパターン
等の変更があった場合、それらの条件に対して流量制限
ゲート上の間隙部の大きさや、樹脂溜り室の容積が不適
切となり、ランナの末端部におけるキャビティで成形さ
れる半導体装置にはボイドの発生やワイヤの変形等の不
良が発生する。In this conventional semiconductor device resin encapsulation mold, the following problems occur because the gap amount on the flow rate limiting gate and the volume of the resin reservoir chamber cannot be changed. It was If the type of resin, molding conditions, wire bonding pattern, etc. are changed at the beginning of mold production, the size of the gap above the flow rate limiting gate and the volume of the resin reservoir chamber are inappropriate for those conditions. Therefore, defects such as voids and wire deformation occur in the semiconductor device molded in the cavity at the end of the runner.
【０００８】それらの不良と無くすため、流量制限ゲー
ト上の間隙量や樹脂溜り室の容積を変える必要がある
が、変更するためには、流量制限ゲートと樹脂溜り室の
再製作または追加工が必要となり、それに要する製作時
間及びコストの上昇をもたらすという問題があった。In order to eliminate these defects, it is necessary to change the gap amount on the flow rate limiting gate and the volume of the resin reservoir chamber, but in order to change it, the flow rate limiting gate and the resin reservoir chamber must be remanufactured or an additional process. However, there is a problem in that the manufacturing time and the cost required therefor are increased.
【０００９】本発明の目的は、樹脂の種類や成形条件及
びワイヤボンディングパターン等の変更があっても、ボ
イドの発生やワイヤの変形等を起すことなく樹脂封止出
来る汎用性のある半導体装置樹脂封止用金型を提供する
ことである。An object of the present invention is to provide a versatile semiconductor device resin that can be resin-sealed without causing voids or wire deformation even if the type of resin, molding conditions, wire bonding pattern, etc. are changed. It is to provide a mold for sealing.
【００１０】[0010]
【課題を解決するための手段】本発明の半導体装置樹脂
封止用金型は、上型の窪みとこの窪みに対応する窪みで
形成されるキャビティとこのキャビティに適ずるランナ
より溶融樹脂が排出される開口部の開口度を調整する開
口度調整機構と、排出される前記溶融樹脂を貯える樹脂
溜り室の容積を調整する容積調整機構とを備えている。In a semiconductor device resin sealing die of the present invention, molten resin is discharged from a cavity formed by an upper mold cavity, a cavity corresponding to this cavity, and a runner suitable for this cavity. The opening degree adjusting mechanism for adjusting the opening degree of the opened opening portion and the volume adjusting mechanism for adjusting the volume of the resin reservoir chamber for storing the discharged molten resin are provided.
【００１１】[0011]
【実施例】次に発明について図面と参照して説明する。
図１は本発明の半導体樹脂封止用金型の一実施例を説明
するための下型を示す斜視図である。この半導体装置樹
脂封止用金型は、ランナから溶融樹脂を排出する開口度
を可変する機構とランナより排出される樹脂溜り室の容
積を可変させる機構とを設けたことである。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the invention will be described with reference to the drawings.
FIG. 1 is a perspective view showing a lower mold for explaining an embodiment of a semiconductor resin sealing mold of the present invention. This semiconductor device resin sealing die is provided with a mechanism for changing the opening degree for discharging the molten resin from the runner and a mechanism for changing the volume of the resin reservoir chamber discharged from the runner.
【００１２】すなわち、図１に示すようにランナ１の最
終端に配置される樹脂溜り室４の対向する壁を形成する
とともに互いに移動して樹脂溜り室４の容積を変える一
対の容積調整ブロック５と、ランナ１から溶融樹脂を排
出する開口部の開口度を互いに移動して変える一対の流
量制限ブロック７とを設けたことである。それ以外は従
来例と同じである。また、この流動制限ブロック７はラ
ンナ１と直角方向に移動することによって開口部８の間
隙幅と最大でランナ幅と同一最小で０に調整できるよう
になっている。That is, as shown in FIG. 1, a pair of volume adjusting blocks 5 that form opposing walls of the resin reservoir chamber 4 arranged at the final end of the runner 1 and move with each other to change the volume of the resin reservoir chamber 4. And a pair of flow rate limiting blocks 7 that move and change the degree of opening of the opening for discharging the molten resin from the runner 1. Other than that, it is the same as the conventional example. Further, the flow restricting block 7 can be adjusted to a maximum of the gap width of the opening 8 and a minimum of 0 which is the same as the runner width by moving in the direction perpendicular to the runner 1.
【００１３】次に、この金型における樹脂封止過程につ
いて説明する。紙面の左側よりランナ１内へ樹脂が注入
されるとまず、ランナ１の供給部側における窪み６ｄ，
６ｈで形成されるそれぞれのキャビティ内に樹脂が充填
され始める。更にランナ１の最終端まで樹脂が注入して
くると、ランナの末端部にある窪み６ａ，６ｅで形成さ
れるキャビティにも樹脂が注入される。このとき、流量
制限ブロック７によってランナ１を流れる樹脂は阻止さ
れ、一度に樹脂溜り室４内に樹脂が充填されず、樹脂は
開口部８を通って少量ずつ樹脂溜り室４内に充填され
る。これによってランナ１の末端部にあるキャビティに
加わる圧力が開口部８を通して樹脂溜り室４へ分圧さ
せ、上昇を抑えることが出来る。Next, the resin sealing process in this mold will be described. When the resin is injected into the runner 1 from the left side of the paper, first, the recess 6d on the supply portion side of the runner 1
The resin begins to be filled in each cavity formed in 6h. Further, when the resin is injected up to the final end of the runner 1, the resin is also injected into the cavities formed by the depressions 6a and 6e at the end of the runner. At this time, the resin flowing in the runner 1 is blocked by the flow rate restriction block 7, the resin is not filled in the resin reservoir chamber 4 at one time, and the resin is gradually filled in the resin reservoir chamber 4 through the opening 8. . As a result, the pressure applied to the cavity at the end of the runner 1 is divided into the resin reservoir chamber 4 through the opening 8 and the rise can be suppressed.
【００１４】ここで、これら容積調整ブロック５および
流量制限ブロック７は移動可能なため、樹脂の特性の差
や成形条件の差に対応して開口部８の開口度や樹脂溜り
室４の容積を末端部におけるキャビティによる樹脂体に
ボイドの発生や樹脂封止によるワイヤ変形等の不良が発
生しないように設定すれば良い。Since the volume adjusting block 5 and the flow rate limiting block 7 are movable, the opening degree of the opening 8 and the volume of the resin reservoir chamber 4 are adjusted in accordance with the difference in resin characteristics and the difference in molding conditions. It may be set so that defects such as voids in the resin body due to the cavity at the end portion and wire deformation due to resin sealing do not occur.
【００１５】[0015]
【発明の効果】以上説明したように本発明は、ランナ及
びキャビティより排出される溶融樹脂の排出口の開口度
を調整する機構と、排出される溶融樹脂を溜める容積を
調節する機構とを設けることによって、樹脂の種類や成
形条件及びワイヤのボンディングパターン等の変更があ
っても、その都度前記開口度調節機構及び前記容積調節
機を調節し、キャビティ内に注入される樹脂の注入圧を
最適圧に調節することができるので、ボイドの発生やワ
イヤの変形を起すことなく樹脂封止出来る汎用性のある
半導体装置樹脂封止用金型が得られるという効果があ
る。As described above, the present invention is provided with the mechanism for adjusting the opening degree of the discharge port for the molten resin discharged from the runner and the cavity, and the mechanism for adjusting the volume for storing the discharged molten resin. Even if the type of resin, molding conditions, wire bonding pattern, etc. are changed, the opening pressure adjusting mechanism and the volume adjusting device are adjusted to optimize the injection pressure of the resin injected into the cavity. Since the pressure can be adjusted, it is possible to obtain a versatile semiconductor device resin encapsulating mold that can be resin-encapsulated without generating voids or deforming wires.
【図１】本発明の半導体装置樹脂封止用金型の一例を説
明するための下型を示す斜視図である。FIG. 1 is a perspective view showing a lower mold for explaining an example of a semiconductor device resin sealing mold of the present invention.
【図２】従来の半導体装置樹脂封止用金型の一例を説明
するための下型を示す斜視図である。FIG. 2 is a perspective view showing a lower mold for explaining an example of a conventional semiconductor device resin sealing mold.
１ ランナ ３ ゲート ４，４ａ 樹脂溜り室 ５ 容積調整ブロック ６ａ，６ｂ，６ｃ，６ｄ，６ｅ，６ｆ，６ｇ，６ｈ
窪み ７ 流量制限ブロック ８ 開口部 １３ 流量制限ゲート １４ 間隙部1 Runner 3 Gate 4, 4a Resin Reservoir 5 Volume Adjustment Block 6a, 6b, 6c, 6d, 6e, 6f, 6g, 6h
Cavity 7 Flow rate limiting block 8 Opening 13 Flow rate limiting gate 14 Gap
Claims (1)
形成されるキャビティとこのキャビティに通ずるランナ
より溶融樹脂が排出される開口部の開口度を調整する開
口度調整機構と、排出される前記溶融樹脂を貯える樹脂
溜り室の容積を調整する容積調整機構とを備えることを
特徴とする半導体装置樹脂封止用金型。1. An opening degree adjusting mechanism for adjusting the degree of opening of a cavity formed by an upper mold cavity, a cavity corresponding to the cavity, and a runner communicating with the cavity, and adjusting the degree of opening of the opening. And a volume adjusting mechanism for adjusting the volume of the resin reservoir chamber for storing the molten resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15020792A JPH05343455A (en) | 1992-06-10 | 1992-06-10 | Mold for resin-sealing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15020792A JPH05343455A (en) | 1992-06-10 | 1992-06-10 | Mold for resin-sealing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05343455A true JPH05343455A (en) | 1993-12-24 |
Family
ID=15491873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15020792A Withdrawn JPH05343455A (en) | 1992-06-10 | 1992-06-10 | Mold for resin-sealing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05343455A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109698132A (en) * | 2017-10-24 | 2019-04-30 | 瑞萨电子株式会社 | The manufacturing method and lead frame of semiconductor devices |
-
1992
- 1992-06-10 JP JP15020792A patent/JPH05343455A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109698132A (en) * | 2017-10-24 | 2019-04-30 | 瑞萨电子株式会社 | The manufacturing method and lead frame of semiconductor devices |
| CN109698132B (en) * | 2017-10-24 | 2023-10-20 | 瑞萨电子株式会社 | Method for manufacturing semiconductor device and lead frame |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19990831 |