JPH05335465A - Semiconductor device - Google Patents

Abstract

PURPOSE:To obtain the title semiconductor device capable of avoiding the cracking in the sealing member occurring during the reflow soldering step of the title semiconductor device onto a printed wiring-board while miniaturizing the contour dimension of a semiconductor element and a package as well as facilitating the measures for acceleration and the couter-measures against heat generation due to higher integration. CONSTITUTION:Within the title semiconductor device l composed of a module 2 comprising an insulating substrate 7 having at least one layer of conductive pattern 6 whereon a semiconductor element 4 is mounted to be wire-bonded and sealed as well as a socket 3 for fitting the module 2 thereto having a housing 12 whereto a conductive member 11 for conducting the conductive pattern 6 is fitted while the conductive pattern 6 is pressure-fixed to the conductive member 11 to be connected to each other, the module 2 is to be fitted after packaging the socket 3 on a printed wiring-board.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device.

[0002]

2. Description of the Related Art FIG. 8 is a sectional view showing an example of a conventional semiconductor device. In the figure, 80 is a semiconductor device, 81 is a semiconductor element that constitutes the semiconductor device 80, 82 is a die pad on which this semiconductor element 81 is mounted, and 83 is a lead, which is connected to the semiconductor element 81 by a bonding wire 84. Reference numeral 85 is a mold resin for sealing these. The leads 83 and the bonding wires 84 play a role of electrical wiring between the semiconductor element 81 and the outside (printed wiring board). The die pad 82 and the leads 83 are a part of the lead frame 86 and are made of copper alloy or iron alloy. As an iron alloy, 42% mainly called 42 alloy
An alloy such as Ni-balance Fe is used. The lead frame 86 also has a role of allowing the semiconductor element 81 to operate normally by dissipating the heat generated in the semiconductor element 81 to the outside.

As shown in FIG. 9, the semiconductor device 80 shown in FIG. 8 is connected to the surface of a pad 88 formed on a printed wiring board 87 with solder 89. This type of semiconductor device 80 is called a surface mount type and is becoming mainstream at present. The semiconductor device 80 is temporarily attached to the printed wiring board 87, and fixed and connected by reflow soldering. In this step, the semiconductor device 80 is given a heat shock of 200 ° C. or higher.

In some cases, a method of mounting an IC socket on a printed wiring board 87 and then mounting a semiconductor device 80 as shown in FIG. 8 on the IC socket is also adopted.

[0005]

The conventional semiconductor device as described above has the following four problems. 1) In order to maintain the reliability of the semiconductor device, the semiconductor element is protected by being sealed with glass, ceramic, resin or the like. Currently, as a sealing method, a resin-sealed package is adopted in most semiconductor devices in terms of cost and mass productivity. However, resin encapsulation is inferior in reliability to glass and ceramic encapsulation.Especially in the reflow soldering process, water penetrates through the gap between the encapsulating material and the wiring material and vaporizes and expands during heat shock. In some cases, the sealing part was damaged.

As a countermeasure against this, it has been attempted to mount only an IC socket on a substrate first and then mount a semiconductor device on this IC socket. However, this method has the effect of avoiding heat shock, but it is difficult to automate the mounting of the semiconductor device, and it is necessary to rely on human hands, and it is necessary to handle the leads (external terminals) of the semiconductor device so as not to deform them. Is inefficient,
There is a high possibility that deformation defects will occur.

2) In recent years, the technique for forming fine patterns of semiconductor elements has been remarkably improved, and semiconductor elements having the same function but having a much smaller area are being developed. As a result, more semiconductor elements can be arranged on one wafer, and the yield is improved, so that cost reduction is realized.

However, even if a semiconductor element is manufactured by making full use of the present technology, it is difficult to wire the semiconductor element to the outside.
In some cases, the semiconductor element is purposely made larger than necessary. This is because when the semiconductor element is made smaller, it is necessary to narrow the pitch of the lead frame that is normally responsible for the electrical connection from the semiconductor element to the external printed wiring board, but this fine processing technology is close to the limit. ,
This is because it cannot be applied to smaller semiconductor devices. As a countermeasure, TAB (Tape Autom)
aged Bonding method and TCP (Tape)
Carrier Package) is adopted, but it is expensive due to lack of versatility.

3) With the improvement of the fine processing technology of semiconductor elements, the degree of integration is increasing, and especially in the case of logic circuit elements in which the number of terminals increases with the increase in the degree of integration, the external dimensions of the semiconductor device are correspondingly increased. Is getting bigger,
It has become a hindrance to satisfying the needs of light, thin, short, and small electrical equipment using semiconductor devices.

In addition to this, the processing speed of the electric signal of the semiconductor element is increasing, and in order to obtain a stable signal without noise, the resistance and inductance of the lead frame must be reduced, Therefore, it was forced to increase the number of power supply terminals and ground terminals. In order to reduce the external dimensions, the pitch of the lead frame may be made narrower. However, due to the mounting technology of the semiconductor device on the printed wiring board and the strength of the lead frame, the pitch of 0.5 mm pitch is excluded except in special cases. Is the limit.

4) As the degree of heat generation of the semiconductor element increases as the degree of integration increases, efficient dissipation of this heat is a necessary condition for the normal operation of the semiconductor element.
0 (a), a heat radiation fin or a heat sink 90 is attached, a heat spreader 91 is attached as shown in FIG. 10 (b), and thermal conductivity is good as shown in FIG. The die pad 92 made of aluminum nitride was used to dissipate the heat. However, these methods are all expensive, or the heat dissipation effect is not sufficient.

The present invention has been made to solve the above problems, and an object thereof is to obtain a semiconductor device which can be miniaturized, has high reliability, and is inexpensive.

[0013]

The present invention is the following semiconductor device. (1) A semiconductor element, an insulating substrate having the semiconductor element mounted thereon and having at least one layer of a conductive pattern, a bonding wire connecting the semiconductor element and the conductive pattern, and a semiconductor so that a part of the conductive pattern is exposed. A module including a sealing member for sealing an element and a bonding wire on an insulating substrate, a conductive member corresponding to the conductive pattern, and a housing for mounting the module so that the conductive pattern is pressed against the conductive member. A semiconductor device having a socket including (2) The semiconductor device according to (1), wherein the insulating substrate has a multilayer conductive pattern. (3) The above (1) in which the heat dissipation member is mounted on the insulating substrate.
Alternatively, the semiconductor device according to (2).

[0014]

In the semiconductor device of the present invention, the conductive pattern is formed on the insulating substrate, the semiconductor element is mounted on the insulating substrate, and the conductive pattern is connected by the bonding wire to expose a part of the conductive pattern. A semiconductor element and a bonding wire are sealed on an insulating substrate with a sealing member to form a module. The module thus formed is mounted in a housing, and the conductive pattern is pressed against the conductive member to form a semiconductor device.

When mounting such a semiconductor device,
With the module removed, the conductive member of the socket is soldered to fix the socket to a printed wiring board or the like, and then the module is mounted in the socket for mounting.

In the semiconductor device of the present invention, the conductive pattern on the substrate can be processed much finer than that of the conventional lead frame, so that it is not necessary to make the semiconductor element larger than necessary. The size can be reduced. Since the reflow soldering at the time of mounting is performed only on the socket, the module including the semiconductor element is not given a heat shock, and therefore, there is no fear that a reflow crack defect occurs. Further, since the module is simple and does not have a deformable portion like the conventional lead frame, it does not cause a defect at the time of mounting and is easy to be automatically mounted.

In the semiconductor device according to the second aspect of the present invention, the noise of the signal is reduced by using the multi-layered conductive pattern formed on the insulating substrate separately for the signal, the power supply and the ground. Besides, the number of signal wirings can be significantly reduced. Therefore, miniaturization of the semiconductor device can be realized.

In the semiconductor device according to the third aspect of the present invention, the heat generated in the semiconductor element is radiated from the insulating substrate through the heat radiation member, and a high heat radiation effect can be obtained.

[0019]

Embodiments of the present invention will be described below with reference to the drawings. Example 1 FIG. 1 is a sectional view showing a semiconductor device of Example 1, FIG.
Is a perspective view of the module, and (b) is a perspective view of the socket body. In the figure, reference numeral 1 denotes a semiconductor device, which comprises a module 2 and a socket 3 for mounting the same.

The module 2 is equipped with a semiconductor element 4 and the semiconductor element 4 via an adhesive 5, and at least 1
The insulating substrate 7 having the conductive pattern 6 of the layer, the bonding wire 8 connecting the semiconductor element 4 and the conductive pattern 6, and the semiconductor element 4 and the bonding wire 8 on the insulating substrate 7 so that a part of the conductive pattern 6 is exposed. And a sealing member 9 for sealing. As the insulating substrate 7, resin, ceramic, glass or the like is used. Sealing member 9
As the material, resin, ceramic, glass or the like is used.

The socket 3 comprises a conductive member 11 corresponding to the conductive pattern 6, and a housing 12 in which the module 2 is mounted so that the conductive pattern 6 is pressed against the conductive member 11. The conductive member 11 includes the contact 13 and the external terminal 1.
Have four. The housing 12 includes a housing body 15 to which the conductive member 11 is attached and a cap 16.

In the semiconductor device 1 described above, the conductive pattern 6 is formed on the insulating substrate 7 by electroless plating or the like, or the laminated copper foil is etched to form the conductive pattern 6, and the semiconductor element 4 is bonded. It is fixed to the insulating substrate 7 by the agent 5 and connected to the conductive pattern 6 by the bonding wire 8, and the semiconductor element 4, the bonding wire 8 and a part of the conductive pattern 6 are sealed on the insulating substrate 7 by the sealing member 9. Stop to form module 2.

The module 2 thus formed is mounted on the housing body 15 of the socket 3 so that the exposed portion of the conductive pattern 6 contacts the contact 13 of the conductive member 11, and the cap 16 is attached to the housing body 15. The semiconductor device 1 is formed by crimping the conductive pattern 6 and the contact 13.

When such a semiconductor device 1 is mounted on a printed wiring board or the like, the external terminal 14 of the conductive member 11 of the socket 3 is reflow-soldered to the connection pad of the printed wiring board with the module 2 removed. After fixing and connecting, the module 2 is mounted in the socket 3 and mounted.

Therefore, heat shock is not applied to the module 2 including the semiconductor element 4 by the reflow soldering, and there is no possibility of causing a reflow crack defect. Further, the module 2 has no externally deformable portion such as the conventional lead frame and is simple, so that no defect occurs during mounting, and automatic mounting is easy.

Second Embodiment FIG. 3 is a sectional view showing a module of a semiconductor device according to a second embodiment. In this embodiment, the conductive patterns 6 formed on the insulating substrate 7 are formed in multiple layers. In this embodiment, the conductive patterns 6 are composed of three layers of outer layer patterns 6a and 6b and inner layer pattern 6c, and are connected by through holes 18.

In the case of such a semiconductor device, like the printed wiring board, the pattern for signals, the pattern for power supplies, and the pattern for grounding can be provided in different layers, respectively, so that the noise of signals can be reduced. Further, in order to provide a stable power supply, it is indispensable to provide a large number of leads for power supply and ground in the conventional semiconductor device. Especially, in the case of a large number of pins, nearly half of the leads may be for power supply and ground. ,
The number of signal wirings can be extremely reduced by forming a multilayer. Therefore, it is possible to reduce the external dimensions of the semiconductor device.

Third Embodiment FIG. 4 is a sectional view showing a semiconductor device according to a third embodiment. This semiconductor device 1 includes a heat dissipation member 21 such as a heat dissipation fin or a heat sink on the opposite side of the insulating substrate 7 from which the semiconductor element 4 is mounted.
Is installed. By providing the heat dissipation member 21 in this way, the heat generated in the semiconductor element 4 can be effectively dissipated from the heat dissipation member 21 through the insulating substrate 7. Also,
When aluminum nitride having high thermal conductivity is used as the base material of the insulating substrate 7, a higher heat dissipation effect can be obtained than when the heat dissipation member 21 is provided.

Embodiment 4 FIG. 5A is a plan view showing an insulating substrate of a semiconductor device of Embodiment 4, FIG. 5B is a bottom view thereof, and FIG. 6A is a plan view showing a housing body of a socket. (b) is a sectional view corresponding to AA of (a) showing a socket. In the semiconductor device 1 of this embodiment, a logic element having 160 electrodes is mounted as the semiconductor element 4.

As shown in FIGS. 5A and 5B, the insulating substrate 7 has a signal wiring pattern 22 and a ground pattern 23 as an outer layer pattern 6a on the upper surface, and a power supply pattern 24 as an outer layer pattern 6b on the lower surface. The outer layer patterns 6a, 6b are connected by through holes 18. As shown in FIG. 6, the socket 3 has a structure in which the external terminals 14 are arranged on both inner and outer sides of the housing body 15.

In the above structure, a polyimide resin plate is used as the base material of the insulating substrate 7, both sides of which are plated with gold to form the conductive patterns 6 as the outer layer patterns 6a and 6b.
Formed. After bonding the element to the insulating substrate 7 with an adhesive made of epoxy resin, wire bonding is performed,
After potting and sealing, the pieces were separated one by one to complete the semiconductor module portion. As the conductive member 11 of the socket 3, bronze plated with gold is used.
A structure in which a gull wing type external terminal 14 is provided inside and outside a 4 mm × 14 mm ring-shaped housing 12 is provided.

Example 5 A module 2 for mounting the same semiconductor element 4 as in Example 4 was manufactured by using aluminum nitride as the base material of the insulating substrate 7. As the conductive pattern 6, one layer of the outer layer pattern 6a on the side where the semiconductor element 4 is mounted is formed, and the others are the same as those in Example 4.
It has the same structure as. The outer dimensions of the socket 3 are 28 m.
QFP (Q
The structure has a gull wing type external terminal 14 of the same shape as the uad Flat Package).

In Examples 4 and 5, since the semiconductor element 4 is a mass-produced model, the size is 10 mm × 10 mm, but if the structure of the present invention is adopted, the conventional minimum lead pitch is about 250 μm. On the other hand, since the pitch of the conductive patterns 6 can be reduced to about 150 μm,
The size of the semiconductor element can be reduced to 6 mm × 6 mm. 6 mm x 6 mm due to high integration of semiconductor elements
Since it is possible to manufacture approximately three times the number of wafers of the same size, a significant cost reduction can be expected if only semiconductor elements are used.

Test Example 1 As the samples of Examples 4 and 5 and Comparative Example 1, a conventional semiconductor device (160-pin QFP) was mounted on a printed wiring board by reflow soldering. Since the semiconductor devices of Examples 4 and 5 are mounted only on the housing body, mold resin cracks that adversely affect the semiconductor element 4 did not naturally occur, but the semiconductor devices of Comparative Example 1 were 2 out of 10. A crack has occurred.

Test Example 2 The signal waveforms of the semiconductor devices of Example 4 and Comparative Example 1 were measured. The results are shown in Fig. 7. From FIG. 7, it is proved that the present invention has less distortion of the pulse waveform and the noise is reduced as compared with the conventional case.

Test Example 3 In order to examine the heat dissipation of the semiconductor device of the present invention, the semiconductor device of Example 5 and the semiconductor device of Comparative Example 1 described above were used as models to simulate the heat dissipation characteristics using a computer. It is generally known that in the model of Comparative Example 1, the heat conductivity of the mold resin is poor, and therefore the heat radiation characteristics are considerably different depending on the material of the lead frame.
In this simulation, it was assumed that the lead frame material and the socket terminal material were copper alloys having excellent heat dissipation characteristics.

As a result, in the model of Comparative Example 1, the rate of heat being dissipated to the outside of the package through the lead frame is high, whereas in the model of Example 5, most of the heat is in the atmosphere via the aluminum nitride substrate. Was found to be dissipated. Further, in the model of Example 5, even if the amount of heat generated from the semiconductor element was doubled, it could be kept lower than the temperature of the semiconductor element of the model of Comparative Example 1. Further, when the package was blown with air and forcedly cooled, the difference became more remarkable.

In the above embodiment, a polyimide resin plate or an aluminum nitride plate was used as the base material of the insulating substrate,
Various insulating materials such as alumina, glass, and epoxy resin can be used. Also regarding the resin sealing method,
Needless to say, the same effect can be obtained regardless of the shape of the socket, since it is possible to perform mold sealing instead of potting.

[0039]

As described above, according to the first aspect of the present invention, the module in which the semiconductor element is mounted and sealed on the insulating substrate having the conductive pattern is mounted in the socket. After mounting the socket, the module can be mounted, which can prevent cracks in the sealing part, facilitate module mounting, and prevent deformation defects, and reduce the conductive pattern pitch. A semiconductor device which can be miniaturized, has high reliability, and is inexpensive can be obtained.

According to the second aspect of the present invention, since the multi-layer conductive pattern is formed on the insulating substrate, the signal, power supply, and ground conductive patterns can be formed separately, and thereby the signal noise is reduced. The number of signal lines can be reduced and the semiconductor device can be further downsized.

According to the third aspect of the present invention, since the heat dissipation member is mounted on the insulating substrate, the heat generated in the semiconductor element can be efficiently dissipated, and a semiconductor device having excellent heat dissipation can be obtained. it can.

[Brief description of drawings]

FIG. 1 is a sectional view of a semiconductor device according to a first embodiment.

2A is a perspective view of a module forming the semiconductor device of Embodiment 1, and FIG. 2B is a perspective view of a socket body.

FIG. 3 is a sectional view of a semiconductor device module according to a second embodiment.

FIG. 4 is a sectional view of a semiconductor device according to a third embodiment.

5A is a plan view of an insulating substrate of a semiconductor device of Example 4, and FIG. 5B is a bottom view thereof.

6A is a plan view of a housing main body of a socket according to a fourth embodiment, and FIG. 6B is a sectional view taken along line AA of FIG.

7 is a signal waveform diagram of Test Example 2. FIG.

FIG. 8 is a cross-sectional view of a conventional semiconductor device.

FIG. 9 is a cross-sectional view showing a mounting state of a conventional semiconductor device on a printed wiring board.

FIG. 10A is a side view of another conventional semiconductor device,
(B) is a sectional view of another conventional semiconductor device.

FIG. 11 is a sectional view of still another conventional semiconductor device.

[Explanation of symbols]

 1 Semiconductor Device 2 Module 3 Socket 4 Semiconductor Element 5 Adhesive 6 Conductive Pattern 6a, 6b Outer Layer Pattern 6c Inner Layer Pattern 7 Insulating Substrate 8 Bonding Wire 9 Sealing Member 11 Conductive Member 12 Housing 13 Contactor 14 External Terminal 15 Housing Body 16 Cap 18 Through Hole 21 Heat Dissipating Member 22 Signal Wiring Pattern 23 Grounding Pattern 24 Power Supply Pattern

Claims (3)

[Claims] 1. A semiconductor element, an insulating substrate having the semiconductor element mounted thereon and having at least one layer of a conductive pattern, a bonding wire connecting the semiconductor element and the conductive pattern, and a part of the conductive pattern exposed. A module comprising a semiconductor element and a sealing member for sealing a bonding wire on an insulating substrate, a conductive member corresponding to the conductive pattern, and the module mounted so that the conductive pattern is pressed against the conductive member. A semiconductor device comprising a socket including a housing for 2. The semiconductor device according to claim 1, wherein the insulating substrate has a multilayer conductive pattern. 3. The semiconductor device according to claim 1, wherein a heat dissipation member is mounted on the insulating substrate.