JPH0533305B2 - - Google Patents
Info
- Publication number
- JPH0533305B2 JPH0533305B2 JP61278655A JP27865586A JPH0533305B2 JP H0533305 B2 JPH0533305 B2 JP H0533305B2 JP 61278655 A JP61278655 A JP 61278655A JP 27865586 A JP27865586 A JP 27865586A JP H0533305 B2 JPH0533305 B2 JP H0533305B2
- Authority
- JP
- Japan
- Prior art keywords
- base material
- graphite
- film
- support rod
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 27
- 238000006243 chemical reaction Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- 229910052799 carbon Inorganic materials 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 description 25
- 239000010439 graphite Substances 0.000 description 25
- 239000011247 coating layer Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- -1 silicon halide compound Chemical class 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010406 interfacial reaction Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、カーボン基材の全面にCVDあるい
はコンバージヨン法により他物質の均質被膜を形
成する方法に関し、とくに半導体エピタキシヤル
グロース用サセプターに適用するSiC被覆黒鉛盤
の製造に有用な被膜形成方法を提供するものであ
る。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method of forming a homogeneous film of another material on the entire surface of a carbon base material by CVD or convergence method, and is particularly applicable to a susceptor for semiconductor epitaxial growth. The present invention provides a coating formation method useful for manufacturing SiC-coated graphite disks.
半導体のエピタキシヤルグロースに使用される
サセプターは、中央部に貫通孔を有する円盤状の
黒鉛基材にSiCの被膜層を形成した材質で構成さ
れている。SiC被膜の形成は、炭化水素などの炭
素源を含むハロゲン化けい素化合物を還元性気流
中で熱分解反応させて黒鉛基材面に直接SiCを蒸
着するCVD法、あるいはハロゲン化けい素化合
物を還元性気流中で熱分解して一旦黒鉛基材面に
Siを沈着したのち、Siの融点以上の温度域で基材
黒鉛と沈着Siとを界面反応させてSiC化するコン
バージヨン法によりおこなわれるが、この被膜は
黒鉛基材の全面にピンホールのない極めて緻密か
つ均質な状態に形成する必要がある。
A susceptor used for semiconductor epitaxial growth is made of a disc-shaped graphite base material with a through hole in the center and a SiC coating layer formed thereon. The SiC film can be formed using the CVD method, in which a silicon halide compound containing a carbon source such as a hydrocarbon is subjected to a thermal decomposition reaction in a reducing gas flow to deposit SiC directly onto the graphite substrate surface, or the silicon halide compound is deposited directly onto the graphite substrate surface. It is thermally decomposed in a reducing air flow and once attached to the graphite base material surface.
After depositing Si, the conversion method is used to form SiC by causing an interfacial reaction between the graphite base material and the deposited Si at a temperature above the melting point of Si. It is necessary to form it in an extremely dense and homogeneous state.
従来、上記サセプターのSiC被覆化には第３図
に示すような加熱源１（高周波発振コイル）、断
熱層２および黒鉛容器３によつて形成された反応
槽内に先端が尖つた複数本の支柱６を介して黒鉛
基材８をセツトし、この状態でノズル５から反応
ガスを送入する方法がとられている。ところが、
この機構の場合には支柱６の先端が当接する黒鉛
基材面にSiCの被膜が形成されないため、反応を
中断して支持接点を移動しなければならず、被膜
層の不均一化、操業面の煩雑化などの事態を避け
ることができなかつた。 Conventionally, to coat the susceptor with SiC, a plurality of wires with sharp tips were placed in a reaction tank formed by a heating source 1 (high-frequency oscillation coil), a heat insulating layer 2, and a graphite container 3, as shown in FIG. A method is used in which a graphite base material 8 is set via a support 6, and a reactive gas is introduced from a nozzle 5 in this state. However,
In the case of this mechanism, a SiC film is not formed on the graphite base material surface that the tips of the pillars 6 contact, so the reaction must be interrupted and the supporting contact must be moved, resulting in non-uniformity of the film layer and operational problems. It was not possible to avoid situations such as the complexity of the process.
上記の欠点を解消する目的で、高周波加熱コイ
ルの電磁力で黒鉛基材を浮上させ、支持接点のな
い状態でSiCの被膜を形成する方法も提案（特開
昭50−33184）されている。 In order to overcome the above-mentioned drawbacks, a method has been proposed (Japanese Patent Application Laid-Open No. 50-33184) in which a graphite base material is levitated using the electromagnetic force of a high-frequency heating coil and a SiC film is formed without supporting contacts.
しかしながら、特開昭50−33184に係る方法は
使用設備が大がかりとなるうえ、１回の反応で１
枚の被膜処理しかできない能率上の問題点があつ
た。
However, the method according to JP-A-50-33184 requires large-scale equipment, and one reaction requires only one reaction.
There was an efficiency problem in that it was only possible to process one sheet of film.
本発明は、従来技術の諸問題を解決し、支持接
点による被膜の不均一がなく、また大規模な設備
を要さずに複数の黒鉛基材を同時に処理すること
が可能な被膜形成方法を開発提供するものであ
る。 The present invention solves the problems of the prior art, and provides a film forming method that eliminates non-uniformity of the film due to supporting contacts and that can process multiple graphite substrates simultaneously without requiring large-scale equipment. It is developed and provided.
〔問題点を解決するための手段〕
すなわち、本発明によるカーボン基材面への被
膜形成方法は、中央部に貫通孔を有するカーボン
基材の全面にCVDあるいはコンバージヨン法に
より他物質の被膜を形成するにあたり、カーボン
基材をその貫通孔の直径より小さな断面積を有す
る回転支持杆に懸架することにより、反応過程を
通じてカーボン基材の支持接点を連続的に移動す
ることを構成的特徴とする。[Means for solving the problem] That is, the method of forming a film on the surface of a carbon substrate according to the present invention involves forming a film of another material on the entire surface of a carbon substrate having a through hole in the center by CVD or conversion method. The structural feature is that the supporting contacts of the carbon substrate are continuously moved throughout the reaction process by suspending the carbon substrate on a rotating support rod having a cross-sectional area smaller than the diameter of the through hole. .
本発明における支持接点の連続移動機構は、カ
ーボン基材をその貫通孔の直径より小さな断面積
をもつ支持杆に懸架する状態で反応槽内にセツト
し、支持杆を緩徐に回転駆動させることによるも
ので、この機構を介して、支持杆に複数のカーボ
ン基材を懸架することにより１回の反応で複数基
材の被膜化処理を施すことができる。なお、支持
杆の材質は耐熱性の大きな黒鉛あるいはSiC被覆
黒鉛で構成されるが、カーボン基材の貫通孔内面
との間に適度な摩擦力を与える必要がある関係で
SiC被覆黒鉛材で製作することが望ましい。ま
た、支持杆の断面形状は、円形に限らず三角形以
上の多角形とすることも可能である。 The continuous movement mechanism of the support contact in the present invention is achieved by setting the carbon base material suspended on a support rod having a cross-sectional area smaller than the diameter of the through hole in a reaction tank, and slowly driving the support rod to rotate. By suspending a plurality of carbon substrates on a support rod through this mechanism, it is possible to coat a plurality of substrates in one reaction. The material of the support rod is made of highly heat-resistant graphite or SiC-coated graphite, but it is necessary to provide an appropriate amount of frictional force between it and the inner surface of the through-hole in the carbon base material.
It is desirable to manufacture it with SiC-coated graphite material. Further, the cross-sectional shape of the support rod is not limited to a circular shape, but can also be a polygonal shape larger than a triangle.
本発明の方法は、SiCばかりでなくSi3N4、
B4C、BNもしくは熱分解黒鉛などCVD法によつ
て被膜形成が可能な各種物質にも適用することが
できる。 The method of the present invention applies not only to SiC but also to Si 3 N 4 ,
It can also be applied to various materials that can be coated by CVD methods, such as B 4 C, BN, or pyrolytic graphite.
本発明によれば、反応過程を通じてカーボン基
材の支持接点が固定化することなく連続的に移動
しているから、基材面は常に均等に反応ガスと接
触する。この作用によりカーボン基材の全面に均
質な被膜層が形成されることになる。
According to the present invention, the support contacts of the carbon base material are not fixed but are continuously moved throughout the reaction process, so that the surface of the base material is always evenly contacted with the reaction gas. This action results in the formation of a homogeneous coating layer over the entire surface of the carbon base material.
第１図は本発明に適用する装置の１例を示した
もので、１は加熱源（高周波発振コイル）、２は
断熱層、３は黒鉛容器で、これら各部材は反応槽
４に収納装着されている。５は系外から黒鉛容器
３の底部に突出したノズルで、このノズルから反
応ガスが送入される。黒鉛容器３の内部には支柱
６，６′が設置され、この支柱間に支持杆７が着
脱および回動自在に横架されている。支持杆７は
適宜な回転機構を介して系外からの駆動源と連結
しており、反応過程を通じて緩徐に回転する。８
は中央部に貫通孔９を有する円盤状の黒鉛基材
で、その貫通孔９の直径より小さな断面積の前記
支持杆７に懸架される。この状態は、第１図のＡ
−A′断面として図示した第２図のようになる。
FIG. 1 shows an example of the apparatus applied to the present invention, in which 1 is a heating source (high-frequency oscillation coil), 2 is a heat insulating layer, and 3 is a graphite container, each of which is housed and installed in a reaction tank 4. has been done. Reference numeral 5 denotes a nozzle protruding from the outside of the system to the bottom of the graphite container 3, and a reaction gas is fed through this nozzle. Support rods 6 and 6' are installed inside the graphite container 3, and a support rod 7 is horizontally suspended between the support rods in a detachable and rotatable manner. The support rod 7 is connected to a drive source from outside the system through a suitable rotation mechanism, and rotates slowly throughout the reaction process. 8
is a disk-shaped graphite base material having a through hole 9 in the center thereof, and is suspended on the support rod 7 having a cross-sectional area smaller than the diameter of the through hole 9. This state is A in Figure 1.
The result is as shown in FIG. 2, which is illustrated as a -A' cross section.
黒鉛基材８は支持杆７に複数枚懸架することが
できるが、この場合には各黒鉛基板が横方向に移
動する事態を避けるため支持杆７に固定用の凹凸
部を設けておくと都合がよい。 A plurality of graphite substrates 8 can be suspended on the support rod 7, but in this case, it is convenient to provide a fixing uneven part on the support rod 7 to prevent each graphite substrate from moving laterally. Good.
反応時、支持杆７に回転を与えると黒鉛基材の
貫通孔内面との間に接触摩擦により黒鉛基材８自
体も同一方向に回転する。このような回転作動に
より黒鉛基材８に対する支持杆７の支持接点は連
続的に移動するから、基材貫通孔９の内面も円滑
に均質な被膜層が形成される。 During the reaction, when the support rod 7 is rotated, the graphite base material 8 itself also rotates in the same direction due to contact friction between it and the inner surface of the through hole of the graphite base material. Since the support contact point of the support rod 7 with respect to the graphite base material 8 moves continuously due to such rotational operation, a homogeneous coating layer is smoothly formed on the inner surface of the base material through hole 9 as well.
上記の方法によりSi半導体エピタキシヤルグロ
ース用サセプターを目的として、CVD法を用い
て高純度黒鉛基材にSiC被膜を形成したところ、
基材全面に極めて緻密均質な被膜層が生成し、ピ
ンホールは全く認められなかつた。 When a SiC film was formed on a high-purity graphite base material using the CVD method for the purpose of a susceptor for Si semiconductor epitaxial growth using the above method,
An extremely dense and homogeneous coating layer was formed over the entire surface of the substrate, and no pinholes were observed at all.
本発明の方法を適用することにより常に均質無
欠陥の被膜層が作業能率よく形成することができ
る。とくに実施例に示した手段を用いる場合に
は、反応過程に通じてカーボン基材が回動してい
るので反応槽内の温度分布ならびに反応ガスの流
動を均一化でき、均質被膜の形成に一層の効果を
与える。
By applying the method of the present invention, a homogeneous and defect-free coating layer can always be formed with high working efficiency. In particular, when using the means shown in the examples, since the carbon base material rotates throughout the reaction process, the temperature distribution in the reaction tank and the flow of the reaction gas can be made uniform, making it possible to form a more homogeneous film. gives the effect of
第１図は本発明に適用する装置の１例を示した
縦断面図、第２図は第１図のＡ−A′線に沿う断
面略図である。第３図は従来技術に用いられてい
た装置の縦断面図である。
１……加熱源、２……断熱層、３……黒鉛容
器、４……反応槽、５……反応ガス送入用ノズ
ル、６，６′……支柱、７……支柱杆、８……カ
ーボン基材、９……基材貫通孔。
FIG. 1 is a longitudinal cross-sectional view showing one example of a device applied to the present invention, and FIG. 2 is a schematic cross-sectional view taken along line A-A' in FIG. FIG. 3 is a longitudinal sectional view of a device used in the prior art. DESCRIPTION OF SYMBOLS 1... Heat source, 2... Heat insulation layer, 3... Graphite container, 4... Reaction tank, 5... Nozzle for feeding reaction gas, 6, 6'... Support column, 7... Support rod, 8... ...Carbon base material, 9...Base material through hole.
Claims (1)
にCVDあるいはコンバージヨン法により他物質
の被膜を形成するにあたり、カーボン基材をその
貫通孔の直径より小さな断面積を有する回転支持
杆に懸架することにより、反応過程を通じてカー
ボン基材の支持接点を連続的に移動することを特
徴とするカーボン基材面への被膜形成方法。1. When forming a film of another substance on the entire surface of a carbon base material having a through hole in the center by CVD or conversion method, the carbon base material is suspended on a rotating support rod having a cross-sectional area smaller than the diameter of the through hole. A method for forming a film on a carbon substrate surface, characterized in that a supporting contact point of the carbon substrate is continuously moved throughout the reaction process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27865586A JPS63134663A (en) | 1986-11-25 | 1986-11-25 | Formation of film on carbon base material surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27865586A JPS63134663A (en) | 1986-11-25 | 1986-11-25 | Formation of film on carbon base material surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63134663A JPS63134663A (en) | 1988-06-07 |
| JPH0533305B2 true JPH0533305B2 (en) | 1993-05-19 |
Family
ID=17600309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27865586A Granted JPS63134663A (en) | 1986-11-25 | 1986-11-25 | Formation of film on carbon base material surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63134663A (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5457043B2 (en) | 2009-01-30 | 2014-04-02 | 東洋炭素株式会社 | CVD method |
| JP5394092B2 (en) | 2009-02-10 | 2014-01-22 | 東洋炭素株式会社 | CVD equipment |
| KR20140074882A (en) | 2011-10-14 | 2014-06-18 | 토요 탄소 가부시키가이샤 | Cvd device, method for manufacturing susceptor in which cvd device is used, and susceptor |
| JP6460659B2 (en) * | 2014-06-30 | 2019-01-30 | イビデン株式会社 | Ceramic material |
| JP6506056B2 (en) * | 2015-03-13 | 2019-04-24 | イビデン株式会社 | Method of manufacturing ceramic member |
| JP7083732B2 (en) * | 2017-12-04 | 2022-06-13 | 信越化学工業株式会社 | Tantalum Carbide Coated Carbon Material and Parts for Semiconductor Single Crystal Manufacturing Equipment |
| KR102675266B1 (en) | 2017-12-04 | 2024-06-14 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Tantalum carbide-coated carbon material, method for manufacturing thereof, and member for semiconductor single crystal manufacturing apparatus |
| JP7321768B2 (en) | 2018-05-23 | 2023-08-07 | 信越化学工業株式会社 | Chemical vapor deposition apparatus and film forming method |
| JP7470026B2 (en) * | 2020-12-10 | 2024-04-17 | クアーズテック合同会社 | Susceptor and manufacturing method thereof |
| US20220411959A1 (en) * | 2021-06-24 | 2022-12-29 | Coorstek Kk | Susceptor and manufacturing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6030742A (en) * | 1983-07-29 | 1985-02-16 | 川崎重工業株式会社 | Connection structure of three-dimensional structure |
-
1986
- 1986-11-25 JP JP27865586A patent/JPS63134663A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6030742A (en) * | 1983-07-29 | 1985-02-16 | 川崎重工業株式会社 | Connection structure of three-dimensional structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63134663A (en) | 1988-06-07 |
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