JPH04335520A - Vapor growth apparatus - Google Patents
Vapor growth apparatusInfo
- Publication number
- JPH04335520A JPH04335520A JP10616391A JP10616391A JPH04335520A JP H04335520 A JPH04335520 A JP H04335520A JP 10616391 A JP10616391 A JP 10616391A JP 10616391 A JP10616391 A JP 10616391A JP H04335520 A JPH04335520 A JP H04335520A
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- resistance heater
- heater
- sheath heater
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 28
- 239000011733 molybdenum Substances 0.000 claims abstract description 28
- 229910001120 nichrome Inorganic materials 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims description 27
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 20
- 229920000049 Carbon (fiber) Polymers 0.000 claims description 19
- 239000004917 carbon fiber Substances 0.000 claims description 19
- 238000001947 vapour-phase growth Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 239000002131 composite material Substances 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 229910001220 stainless steel Inorganic materials 0.000 claims description 11
- 239000010935 stainless steel Substances 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000012495 reaction gas Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims 4
- 238000009826 distribution Methods 0.000 abstract description 10
- 239000007921 spray Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000004744 fabric Substances 0.000 description 4
- 239000003779 heat-resistant material Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000002296 pyrolytic carbon Substances 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】この発明は、主にＧａＡｓなどの
化合物半導体膜を基板上に成長させる有機金属気相成長
（ＭＯＣＶＤ） 装置を対象としたものであり、特に
、成膜用基板が水平に取り付けられる構造のサセプタを
載置する抵抗加熱ヒータ （以下抵抗加熱ヒータと記す
） の構成に関する。[Industrial Application Field] The present invention is primarily directed to metal organic chemical vapor deposition (MOCVD) equipment for growing compound semiconductor films such as GaAs on substrates. The present invention relates to the configuration of a resistance heater (hereinafter referred to as a resistance heater) on which a susceptor is mounted.
【０００２】0002
【従来の技術】この種気相成長装置の従来の構成例とし
て、本願と同一出願人による出願：特願平２−３１６４
２１号に開示された気相成長装置の構成を図５に示す。
水平な上面に成膜用基板が取り付けられた円板状または
角型板状のモリブデンまたは炭素製サセプタ２は抵抗加
熱ヒータ８に載置され、所定の温度に加熱される。反応
容器３の端部の反応ガス導入口６から導入された反応ガ
スは、流路断面が方形に形成された内容器３Ｂ内を層流
状態で流れ、基板１の上面を通過する際に基板１の面上
で熱分解し、熱分解によって生じたガス分子が基板１の
面上に堆積して膜形成が行われる。基板１を通過したガ
スは反応ガス導入口６と反対側に取り付けられた排気フ
ランジ５の排気口７から排出される。[Prior Art] As an example of the conventional structure of this type of vapor phase growth apparatus, an application filed by the same applicant as the present application: Japanese Patent Application No. 2-3164
FIG. 5 shows the configuration of the vapor phase growth apparatus disclosed in No. 21. A molybdenum or carbon susceptor 2 in the form of a disc or square plate with a film-forming substrate attached to its horizontal upper surface is placed on a resistance heater 8 and heated to a predetermined temperature. The reaction gas introduced from the reaction gas inlet 6 at the end of the reaction container 3 flows in a laminar flow state in the inner container 3B, which has a rectangular flow path cross section, and as it passes over the upper surface of the substrate 1, it The gas molecules are thermally decomposed on the surface of the substrate 1, and gas molecules generated by the thermal decomposition are deposited on the surface of the substrate 1 to form a film. The gas that has passed through the substrate 1 is exhausted from the exhaust port 7 of the exhaust flange 5 attached to the side opposite to the reactive gas inlet 6.
【０００３】図６に、上記構成の気相成長装置における
抵抗加熱ヒータ８の構成を示す。発熱体には、金属パイ
プに抵抗加熱線としてニクロム線を金属パイプと絶縁状
態に挿通してなるシースヒータ１０が用いられ、このシ
ースヒータ１０を折り曲げて引出線が内側になるように
渦巻き状に巻き、これをステンレス製ケース９内に収納
してステンレス製カバー１１を溶接し、カバー１１をサ
セプタ２の加熱面とするホットウォール方式のヒータ構
成としている。FIG. 6 shows the configuration of the resistance heater 8 in the vapor phase growth apparatus having the above configuration. As the heating element, a sheath heater 10 is used, which is made by inserting a nichrome wire as a resistance heating wire into a metal pipe insulated from the metal pipe.The sheath heater 10 is bent and wound spirally so that the lead wire is on the inside. This is housed in a stainless steel case 9 and a stainless steel cover 11 is welded thereto, creating a hot wall type heater configuration in which the cover 11 serves as the heating surface of the susceptor 2.
【０００４】0004
【発明が解決しようとする課題】前述のヒータ構成には
以下のような問題がある。SUMMARY OF THE INVENTION The above heater configuration has the following problems.
【０００５】（１） 前述のヒータ構成では、カバー１
１が、シースヒータ１０からの熱放射と、ケース内気体
を熱伝導媒体とする熱伝導とにより加熱され、シースヒ
ータとカバーとの間の温度勾配が大きく、また、サセプ
タ表面の温度分布が不均一になるという問題がある。(1) In the heater configuration described above, the cover 1
1 is heated by heat radiation from the sheath heater 10 and heat conduction using the gas inside the case as a heat transfer medium, resulting in a large temperature gradient between the sheath heater and the cover, and an uneven temperature distribution on the susceptor surface. There is a problem with becoming.
【０００６】（２） シースヒータの抵抗加熱線にはニ
クロム線が用いられているが、前記第１項に述べたよう
に、シースヒータとカバーとの間の温度勾配が大きいこ
とから、カバーを所定の温度に加熱するのにシースヒー
タの温度を高くする必要があり、シースヒータを９００
℃で使用しつづけると、ニクロム線が断線してしまうと
いう問題がある。(2) Nichrome wire is used as the resistance heating wire of the sheath heater, but as mentioned in item 1 above, the temperature gradient between the sheath heater and the cover is large, so the cover must be placed at a specified temperature. It is necessary to raise the temperature of the sheath heater to heat the sheath heater to 900℃.
There is a problem that the nichrome wire will break if it continues to be used at ℃.
【０００７】（３） ニクロム線断線の障害を避けるた
めに、融点が約４１００℃と高い炭素を発熱体として使
用した場合、炭素内に吸蔵もしくは吸着された不純物が
通電時に放出され、この不純物が膜中に混入して膜の品
質を低下させるという問題が生じている。(3) When carbon, which has a high melting point of approximately 4100°C, is used as a heating element in order to avoid the problem of nichrome wire breakage, impurities occluded or adsorbed in the carbon are released when electricity is applied, and these impurities are A problem has arisen in that it gets mixed into the film and deteriorates the quality of the film.
【０００８】本発明の目的は、上記問題点が解決された
気相成長装置を提供することである。[0008] An object of the present invention is to provide a vapor phase growth apparatus in which the above-mentioned problems are solved.
【０００９】[0009]
【課題を解決するための手段】上記課題を解決するため
に、この発明においては、前記各項の問題点に対応し、
それぞれ次の手段を講ずるものとする。[Means for Solving the Problems] In order to solve the above problems, the present invention addresses the problems of each of the above items,
The following measures shall be taken respectively.
【００１０】（１） 問題点第１項に対応して、従来の
抵抗加熱ヒータにおけるカバー（１１）を除去し、シー
スヒータを、該シースヒータを収納するステンレス製ケ
ースに直接モリブデン溶射により固定する。モリブデン
の溶射量は、シースヒータを完全に覆って表面を平坦に
なしうる程度とし、モリブデンを溶射した後にサセプタ
との接触面を機械加工により平坦に仕上げる。(1) In response to the first problem, the cover (11) of the conventional resistance heater is removed, and the sheath heater is directly fixed to the stainless steel case housing the sheath heater by molybdenum spraying. The amount of molybdenum sprayed is such that it can completely cover the sheath heater and make the surface flat, and after the molybdenum is sprayed, the contact surface with the susceptor is finished flat by machining.
【００１１】（２） 問題点第１項に対応して、シース
ヒータを、該シースヒータを収納するステンレス製ケー
スの底面とモリブデン製プレートとの間にねじを用いて
挟み込み、シースヒータをモリブデン製プレートに強制
的に密着させる構造とする。(2) Corresponding to the first problem, the sheath heater is inserted between the bottom of the stainless steel case housing the sheath heater and the molybdenum plate using screws, and the sheath heater is forced onto the molybdenum plate. The structure is designed to allow close contact.
【００１２】（３） 問題点第２項に対応して、板状も
しくは帯状の炭素繊維複合材料を発熱体とする。(3) Corresponding to the second problem, a plate-shaped or band-shaped carbon fiber composite material is used as a heating element.
【００１３】（４） 問題点第３項に対応して、表面が
耐熱材によりコーティングされた板状もしくは帯状の炭
素を発熱体とする。(4) Corresponding to problem No. 3, a plate-like or band-like carbon whose surface is coated with a heat-resistant material is used as a heating element.
【００１４】[0014]
【作用】（１） シースヒータを、該シースヒータを収
納するステンレス製ケースに直接モリブデン溶射により
固定し、モリブデン溶射後にサセプタとの接触面を平坦
に機械加工仕上げすることにより、シースヒータの熱は
、熱伝導率の大きいモリブデンを熱伝導媒体として機械
加工された接触面へ向かう。従ってシースヒータと接触
面との間の温度勾配が小さくなり、接触面を所定の温度
に昇温するためのシースヒータの温度を接触面の温度よ
りさほど高くする必要がなく、抵抗加熱線であるニクロ
ム線の温度を従来と比べて低く保つことができる。また
、シースヒータから発する熱は、温度勾配に従って移動
するから、接触面へ向かう移動の途中、接触面と平行方
向に温度分布の不均一が存在すると、この方向へも熱の
移動成分が生じ、接触面に到達するまでに、モリブデン
内を接触面と平行方向に温度分布を均一化しながら接触
面へ向かう。これにより、熱が接触面に均一に分布して
到達し、接触面に均一な温度分布が得られる。[Function] (1) The sheath heater is directly fixed to the stainless steel case that houses the sheath heater by molybdenum spraying, and the contact surface with the susceptor is machined to be flat after molybdenum spraying, so that the heat of the sheath heater is transferred by thermal conduction. Molybdenum with a high coefficient is used as a heat transfer medium to the machined contact surface. Therefore, the temperature gradient between the sheath heater and the contact surface becomes smaller, and the temperature of the sheath heater to raise the temperature of the contact surface to a predetermined temperature does not need to be much higher than the temperature of the contact surface. temperature can be kept lower than before. In addition, the heat emitted from the sheath heater moves according to the temperature gradient, so if there is an uneven temperature distribution in the direction parallel to the contact surface during the movement toward the contact surface, a component of heat moving in this direction will also occur, causing the contact Before reaching the contact surface, the molybdenum moves toward the contact surface while making the temperature distribution uniform in the direction parallel to the contact surface. This allows the heat to reach the contact surface in a uniform distribution, resulting in a uniform temperature distribution on the contact surface.
【００１５】（２） シースヒータを、シースヒータを
収納するステンレス製ケースの底面とモリブデン製プレ
ートとの間にねじを用いて挟み込み、シースヒータをモ
リブデン製プレートに強制的に密着させる構造とすれば
、シースヒータの熱はモリブデン製プレートを介してサ
セプタに伝えられるため、シースヒータとプレート上面
との間の温度勾配が、上記第１項の手段の場合と比べ、
シースヒータとモリブデンとの接触面積のちがいから、
第１項の手段の場合ほど小さくはならないものの、従来
のものと比べると格段に小さくなり、シースヒータ内の
ニクロム線の温度を従来より低く保つことができる。ま
た、プレートの厚みを適宜に設定することにより、プレ
ート上面の温度分布を均一化することができる。(2) If the sheath heater is sandwiched between the bottom of the stainless steel case housing the sheath heater and the molybdenum plate using screws, and the sheath heater is forcibly brought into close contact with the molybdenum plate, the sheath heater Since the heat is transferred to the susceptor via the molybdenum plate, the temperature gradient between the sheath heater and the top surface of the plate is lower than in the case of the means described in item 1 above.
Due to the difference in contact area between the sheath heater and molybdenum,
Although it is not as small as in the case of the first means, it is much smaller than the conventional one, and the temperature of the nichrome wire inside the sheath heater can be kept lower than the conventional one. Further, by appropriately setting the thickness of the plate, the temperature distribution on the upper surface of the plate can be made uniform.
【００１６】（３） 抵抗加熱ヒータの発熱体を板状も
しくは帯状の炭素繊維複合材料とした場合には、以下に
説明するように、発熱体自体の耐熱性が向上し、かつ発
熱体が平面状の面熱源となるため、サセプタと発熱体と
の間に気体の層が介在していても、ニクロム線断線のよ
うな障害なくサセプタを均一に加熱することができる。(3) When the heating element of the resistance heater is made of a plate-shaped or band-shaped carbon fiber composite material, the heat resistance of the heating element itself is improved, and the heating element is flat, as explained below. Since the susceptor becomes a planar heat source, even if a gas layer is present between the susceptor and the heating element, the susceptor can be uniformly heated without problems such as breakage of the nichrome wire.
【００１７】板状もしくは帯状の炭素繊維複合材料は、
紡糸したピッチを熱処理することによって得られた炭素
繊維を布状に織り、これをピッチを用いて固化するか、
炭素繊維布をＣＶＤ炉に入れて高温に加熱しつつメタン
などの炭化水素ガスをＨ２ ガス共存のもとで炭素繊維
布に接触させ、炭素繊維布の表面に配向性の緻密な，い
わゆる熱分解炭素の層を形成させたものである。融点が
約４０００℃でニクロム線の約２．５倍と高く、これを
発熱体として用いることにより、より高温での成膜が可
能なヒータとすることができる。[0017] The plate-shaped or band-shaped carbon fiber composite material is
Carbon fibers obtained by heat-treating spun pitch are woven into a cloth, and this is solidified using pitch, or
The carbon fiber cloth is placed in a CVD furnace and heated to a high temperature, and a hydrocarbon gas such as methane is brought into contact with the carbon fiber cloth in the coexistence of H2 gas, resulting in so-called pyrolysis, which creates a densely oriented surface on the surface of the carbon fiber cloth. A layer of carbon is formed. Its melting point is about 4000° C., which is about 2.5 times higher than that of nichrome wire, and by using it as a heating element, it can be made into a heater that can form films at higher temperatures.
【００１８】また、炭素繊維複合材料は一般の黒鉛ヒー
タに比べても固有抵抗が大きいので、ヒータをより小型
， 高温化することができる。[0018] Furthermore, since the carbon fiber composite material has a higher specific resistance than a general graphite heater, the heater can be made smaller and higher in temperature.
【００１９】（４） 抵抗加熱ヒータの発熱体を、表面
が耐熱材によりコーティングされた板状もしくは帯状の
炭素とすれば、通電時に発熱体から放出される不純物を
減らすことができる。コーティングに用いられる耐熱材
としては、例えば炭化ケイ素 （ＳｉＣ， 融点：２７
００℃），熱分解炭素（Ｃ， 融点：４０００℃），熱
分解窒化ホウ素（ＰＢＮ， 融点：約３０００℃） な
どを用いる。コーティングはいずれも前記第３項で述べ
た熱分解炭素層形成の場合と同様の方法で可能であり、
いずれも炭素の表面に緻密なコーティング層を形成する
。(4) If the heating element of the resistance heater is made of plate-shaped or band-shaped carbon whose surface is coated with a heat-resistant material, impurities emitted from the heating element when electricity is applied can be reduced. Examples of heat-resistant materials used for coating include silicon carbide (SiC, melting point: 27
00°C), pyrolytic carbon (C, melting point: 4000°C), pyrolytic boron nitride (PBN, melting point: approximately 3000°C), etc. Coating can be done by the same method as in the case of forming the pyrolytic carbon layer described in Section 3 above,
Both forms a dense coating layer on the carbon surface.
【００２０】[0020]
【実施例】図１に本発明による抵抗加熱ヒータ構成の第
１の実施例を示す。シースヒータ１０を２重に折り曲げ
て引出し線が内側になるように渦巻き状に巻き、これを
ステンレス製ケース９の底面に載せた後、モリブデンを
シースヒータ１０を十分覆う程に溶射し、シースヒータ
１０をケース９に固定するとともに、サセプタ２との接
触面を平坦に機械加工仕上げしたものである。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a first embodiment of a resistance heater configuration according to the present invention. The sheath heater 10 is folded twice and wound spirally so that the lead wire is on the inside. After placing it on the bottom of the stainless steel case 9, molybdenum is sprayed to a sufficient extent to cover the sheath heater 10, and the sheath heater 10 is attached to the case. 9, and the contact surface with the susceptor 2 is machined to be flat.
【００２１】図２に本発明による抵抗加熱ヒータ構成の
第２の実施例を示す。図１と同様に渦巻き状に成形した
シースヒータ１０を底の浅いステンレス製ケース９の底
面に載せた後、モリブデン製のプレート１３をシースヒ
ータ１０の上に載せ、ボルト１４を締めあげることによ
り、シースヒータ１０をプレート１３に強制的に密着さ
せたものである。FIG. 2 shows a second embodiment of the resistance heater configuration according to the present invention. After placing the sheath heater 10 formed into a spiral shape in the same way as in FIG. is forcibly brought into close contact with the plate 13.
【００２２】図３に本発明による抵抗加熱ヒータ構成の
第３の実施例を示す。ステンレス製ケース９内には、発
熱体として、板状に形成された炭素繊維複合材料１５が
、サセプタ２を載置するケース９の上端面と平行に支持
され、接続板１８， 支持棒１９を介して電流が供給さ
れる。炭素繊維複合材料１５の下方には、炭素繊維複合
材料１５と同様に、ピッチ系炭素繊維を用いたフェルト
状の分厚い断熱板１７が配され、下方へ向かう熱を遮蔽
して炭素繊維複合材料１５の熱を有効にサセプタ２の温
度上昇に消費させるようにしている。サセプタ２と炭素
繊維複合材料１５との間には気体の層が存在し、両者の
間の温度勾配は大きいが、炭素繊維複合材料１５の耐熱
性が高いため、従来の抵抗加熱ヒータで使用されたニク
ロム線と同等の温度を繰り返しても障害が生ぜず、また
、板状の炭素繊維複合材料１５は平面状の面熱源を構成
するから、サセプタを均一に加熱することができる。FIG. 3 shows a third embodiment of a resistance heater configuration according to the present invention. Inside the stainless steel case 9, a plate-shaped carbon fiber composite material 15 is supported as a heating element in parallel with the upper end surface of the case 9 on which the susceptor 2 is placed, and a connecting plate 18 and a support rod 19 are supported. Current is supplied through the Similar to the carbon fiber composite material 15, a felt-like thick heat insulating board 17 made of pitch-based carbon fiber is disposed below the carbon fiber composite material 15, and shields the heat directed downward. This heat is effectively consumed to raise the temperature of the susceptor 2. Although a gas layer exists between the susceptor 2 and the carbon fiber composite material 15, and there is a large temperature gradient between the two, the carbon fiber composite material 15 has high heat resistance, so it cannot be used in a conventional resistance heater. No damage occurs even if the same temperature as that of the Nichrome wire is repeated, and since the plate-shaped carbon fiber composite material 15 constitutes a planar surface heat source, the susceptor can be uniformly heated.
【００２３】図４に本発明による抵抗加熱ヒータ構成の
第４の実施例を示す。この構成は、発熱体として、図３
に示す炭素繊維複合材料１５の代わりに、炭化ケイ素，
熱分解炭素， 熱分解窒化ホウ素などの耐熱材でコー
ティングされた板状の炭素を用いたものである。これら
の耐熱性コーティング材は炭素の表面に緻密な層を形成
し、炭素１６内に吸蔵もしくは吸着されていた不純物の
放出を効果的に抑制する。FIG. 4 shows a fourth embodiment of the resistance heater configuration according to the present invention. This configuration is used as a heating element in Figure 3.
Instead of the carbon fiber composite material 15 shown in FIG.
It uses a carbon plate coated with a heat-resistant material such as pyrolytic carbon or pyrolytic boron nitride. These heat-resistant coating materials form a dense layer on the surface of carbon and effectively suppress the release of impurities occluded or adsorbed in carbon-16.
【００２４】[0024]
【発明の効果】本発明においては、抵抗加熱ヒータを上
述のように構成したので、以下に記載する効果が得られ
る。Effects of the Invention In the present invention, since the resistance heater is constructed as described above, the following effects can be obtained.
【００２５】請求項１の装置では、発熱体であるシース
ヒータとモリブデンのサセプタとの接触面との間の温度
勾配が小さく、サセプタとの接触面を所定の温度に昇温
させるのに、シースヒータ内のニクロム線を従来より低
い温度で使用することができ、ニクロム線の断線を防止
することができる。また、モリブデンの熱伝導率が大き
く、かつサセプタとの接触面への熱伝達は、モリブデン
を熱伝導媒体とする熱伝導のみにより行われるため、接
触面の温度分布が均一となる。これにより、気相成長装
置を、ニクロム線断線のような障害のない高信頼性の，
かつ膜厚分布，膜質の良好な成膜が可能な装置とする
ことができる。In the device of the first aspect, the temperature gradient between the sheath heater, which is a heating element, and the contact surface with the molybdenum susceptor is small, and in order to raise the temperature of the contact surface with the susceptor to a predetermined temperature, the temperature gradient within the sheath heater is small. Nichrome wire can be used at a lower temperature than before, and breakage of the Nichrome wire can be prevented. Further, since molybdenum has a high thermal conductivity and heat transfer to the contact surface with the susceptor is performed only by heat conduction using molybdenum as a heat transfer medium, the temperature distribution on the contact surface becomes uniform. This makes the vapor phase growth system highly reliable and free from failures such as nichrome wire breaks.
Moreover, the apparatus can form a film with good film thickness distribution and film quality.
【００２６】また、制御温度であるシースヒータ温度と
接触面温度との差が小さく、正確な温度制御が容易とな
り、より精度の高い装置運転が可能になる。Furthermore, the difference between the sheath heater temperature, which is the control temperature, and the contact surface temperature is small, making it easy to accurately control the temperature, and enabling more accurate device operation.
【００２７】請求項２の装置では、請求項１の装置にお
ける効果のほか、製造工程中にモリブデン溶射のような
熱作業を含まないから、製造が容易になるメリットがあ
る。The apparatus according to the second aspect has the advantage that, in addition to the effects of the apparatus according to the first aspect, the manufacturing process does not include any thermal work such as molybdenum thermal spraying, making it easier to manufacture.
【００２８】請求項３の装置では、発熱体に耐熱性の高
い炭素繊維複合材料が用いられるため、サセプタとの間
に気体の層が介在していても、ニクロム線と同等の高温
で使用した場合、ニクロム線断線のような障害なく、安
定にサセプタを加熱することができ、気相成長装置を、
抵抗加熱ヒータに障害を生じない高信頼の，かつ膜厚分
布， 膜質の良好な成膜が可能な装置とすることができ
る。さらに、発熱体の耐熱性がニクロム線使用のシース
ヒータと比べて格段に高いので、気相成長装置を、より
高温での成膜が可能な装置とすることができる。In the apparatus of claim 3, since a highly heat-resistant carbon fiber composite material is used for the heating element, even if a gas layer is interposed between the heating element and the susceptor, the heating element can be used at a high temperature equivalent to that of a nichrome wire. In this case, the susceptor can be heated stably without problems such as nichrome wire breakage, and the vapor phase growth apparatus is
It is possible to create a highly reliable device that does not cause problems with the resistance heater, and that can form films with good film thickness distribution and film quality. Furthermore, since the heat resistance of the heating element is much higher than that of a sheath heater using nichrome wire, the vapor phase growth apparatus can be used to form a film at a higher temperature.
【００２９】請求項４の装置では、請求項３の装置にお
ける効果に加え、発熱体から放出される不純物が少なく
なり、気相成長装置を、膜質がさらに良好な膜を形成可
能な装置とすることができる。In the apparatus of claim 4, in addition to the effects of the apparatus of claim 3, impurities emitted from the heating element are reduced, making the vapor phase growth apparatus capable of forming a film with even better film quality. be able to.
【図面の簡単な説明】[Brief explanation of the drawing]
【図１】本発明による抵抗加熱ヒータ構成の第１の実施
例を示す縦断面図FIG. 1 is a longitudinal sectional view showing a first embodiment of a resistance heater configuration according to the present invention.
【図２】本発明による抵抗加熱ヒータ構成の第２の実施
例を示す縦断面図FIG. 2 is a longitudinal sectional view showing a second embodiment of the resistance heater configuration according to the present invention.
【図３】本発明による抵抗加熱ヒータ構成の第３の実施
例を示す縦断面図FIG. 3 is a vertical cross-sectional view showing a third embodiment of the resistance heater configuration according to the present invention.
【図４】本発明による抵抗加熱ヒータ構成の第４の実施
例を示す縦断面図FIG. 4 is a longitudinal sectional view showing a fourth embodiment of the resistance heater configuration according to the present invention.
【図５】本発明が対象とする気相成長装置構成の一例を
示すものであって、同図（ａ） は平面断面図， 同図
（ｂ） は側面断面図FIG. 5 shows an example of the configuration of a vapor phase growth apparatus to which the present invention is applied, in which figure (a) is a plan cross-sectional view, and figure (b) is a side cross-sectional view.
【図６】従来の抵抗加熱ヒータの構成例を示す縦断面図
[Fig. 6] A vertical cross-sectional view showing an example of the configuration of a conventional resistance heater.
１ 基板
２ サセプタ
３ 反応容器
８ 抵抗加熱ヒータ
９ ケース （ステンレス製ケース）１０
シースヒータ
１１ モリブデン
１３ プレート（モリブデン製プレート）１５
炭素繊維複合材料
１６ 炭素1 Substrate 2 Susceptor 3 Reaction vessel 8 Resistance heater 9 Case (stainless steel case) 10
Sheath heater 11 Molybdenum 13 Plate (molybdenum plate) 15
Carbon fiber composite material 16 carbon
Claims (4)
サセプタを、箱状または円筒状反応容器内の抵抗加熱ヒ
ータに載置して反応ガスを水平に流し、サセプタを抵抗
加熱ヒータとともに反応ガスの流れに垂直なサセプタ軸
を中心に回転しつつ加熱することにより成膜用基板に薄
膜を成長させる気相成長装置において、前記抵抗加熱ヒ
ータが、金属パイプにニクロム線を挿通してなるシース
ヒータを、該シースヒータを収納するステンレス製ケー
スに直接モリブデン溶射により固定してなることを特徴
とする気相成長装置。[Claim 1] A susceptor having a structure in which a film-forming substrate can be mounted horizontally is placed on a resistance heater in a box-shaped or cylindrical reaction vessel, a reaction gas is flowed horizontally, and the susceptor is reacted together with the resistance heater. In a vapor phase growth apparatus that grows a thin film on a film-forming substrate by heating it while rotating around a susceptor axis perpendicular to the flow of gas, the resistance heater is a sheath heater formed by inserting a nichrome wire into a metal pipe. A vapor phase growth apparatus characterized in that the sheath heater is directly fixed to a stainless steel case housing the sheath heater by molybdenum spraying.
サセプタを、箱状または円筒状反応容器内の抵抗加熱ヒ
ータに載置して反応ガスを水平に流し、サセプタを抵抗
加熱ヒータとともに反応ガスの流れに垂直なサセプタ軸
を中心に回転しつつ加熱することにより成膜用基板に薄
膜を成長させる気相成長装置において、前記抵抗加熱ヒ
ータが、金属パイプにニクロム線を挿通してなるシース
ヒータを、該シースヒータを収納するステンレス製ケー
スの底面とモリブデン製プレートとの間にねじを用いて
挟み込んでなることを特徴とする気相成長装置。[Claim 2] A susceptor having a structure in which a film-forming substrate is mounted horizontally is placed on a resistance heater in a box-shaped or cylindrical reaction vessel, a reaction gas is flowed horizontally, and the susceptor is reacted together with the resistance heater. In a vapor phase growth apparatus that grows a thin film on a film-forming substrate by heating it while rotating around a susceptor axis perpendicular to the flow of gas, the resistance heater is a sheath heater formed by inserting a nichrome wire into a metal pipe. is sandwiched between the bottom of a stainless steel case housing the sheath heater and a molybdenum plate using screws.
サセプタを、箱状または円筒状反応容器内の抵抗加熱ヒ
ータに載置して反応ガスを水平に流し、サセプタを抵抗
加熱ヒータとともに反応ガスの流れに垂直なサセプタ軸
を中心に回転しつつ加熱することにより成膜用基板に薄
膜を成長させる気相成長装置において、前記抵抗加熱ヒ
ータが、板状もしくは帯状の炭素繊維複合材料を発熱体
とすることを特徴とする気相成長装置。3. A susceptor having a structure in which a film-forming substrate can be mounted horizontally is placed on a resistance heater in a box-shaped or cylindrical reaction vessel, a reaction gas is flowed horizontally, and the susceptor is reacted together with the resistance heater. In a vapor phase growth apparatus that grows a thin film on a film-forming substrate by heating it while rotating around a susceptor axis perpendicular to the gas flow, the resistance heater heats a plate-shaped or band-shaped carbon fiber composite material. A vapor phase growth apparatus characterized by a body.
サセプタを、箱状または円筒状反応容器内の抵抗加熱ヒ
ータに載置して反応ガスを水平に流し、サセプタを抵抗
加熱ヒータとともに反応ガスの流れに垂直なサセプタ軸
を中心に回転しつつ加熱することにより成膜用基板に薄
膜を成長させる気相成長装置において、前記抵抗加熱ヒ
ータが、表面が耐熱材によりコーティングされた板状も
しくは帯状の炭素を発熱体とすることを特徴とする気相
成長装置。4. A susceptor having a structure in which a film-forming substrate can be mounted horizontally is placed on a resistance heater in a box-shaped or cylindrical reaction vessel, a reaction gas is flowed horizontally, and the susceptor is reacted together with the resistance heater. In a vapor phase growth apparatus that grows a thin film on a film-forming substrate by heating it while rotating around a susceptor axis perpendicular to the flow of gas, the resistance heater is a plate-shaped or A vapor phase growth apparatus characterized by using a band-shaped carbon as a heating element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10616391A JPH04335520A (en) | 1991-05-13 | 1991-05-13 | Vapor growth apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10616391A JPH04335520A (en) | 1991-05-13 | 1991-05-13 | Vapor growth apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04335520A true JPH04335520A (en) | 1992-11-24 |
Family
ID=14426617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10616391A Pending JPH04335520A (en) | 1991-05-13 | 1991-05-13 | Vapor growth apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04335520A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013075815A (en) * | 2011-09-12 | 2013-04-25 | Hitachi Cable Ltd | Method for producing nitride semiconductor crystal, nitride semiconductor epitaxial wafer, and nitride semiconductor freestanding substrate |
| JP2013089953A (en) * | 2011-10-13 | 2013-05-13 | Industrial Technology Research Institute | Metal organic chemical vapor deposition method and apparatus |
| JP2013128086A (en) * | 2011-03-24 | 2013-06-27 | Nuflare Technology Inc | Film formation apparatus and film formation method |
| WO2013175562A1 (en) * | 2012-05-22 | 2013-11-28 | 株式会社島津製作所 | Semiconductor manufacturing apparatus |
-
1991
- 1991-05-13 JP JP10616391A patent/JPH04335520A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013128086A (en) * | 2011-03-24 | 2013-06-27 | Nuflare Technology Inc | Film formation apparatus and film formation method |
| JP2013075815A (en) * | 2011-09-12 | 2013-04-25 | Hitachi Cable Ltd | Method for producing nitride semiconductor crystal, nitride semiconductor epitaxial wafer, and nitride semiconductor freestanding substrate |
| US10060047B2 (en) | 2011-09-12 | 2018-08-28 | Sumitomo Chemical Company, Limited | Nitride semiconductor crystal producing method including growing nitride semiconductor crystal over seed crystal substrate |
| JP2013089953A (en) * | 2011-10-13 | 2013-05-13 | Industrial Technology Research Institute | Metal organic chemical vapor deposition method and apparatus |
| WO2013175562A1 (en) * | 2012-05-22 | 2013-11-28 | 株式会社島津製作所 | Semiconductor manufacturing apparatus |
| JPWO2013175562A1 (en) * | 2012-05-22 | 2016-01-12 | 株式会社島津製作所 | Semiconductor manufacturing equipment |
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