JPH0533182A - Manufacturing method of orifice plate - Google Patents
Manufacturing method of orifice plateInfo
- Publication number
- JPH0533182A JPH0533182A JP18463291A JP18463291A JPH0533182A JP H0533182 A JPH0533182 A JP H0533182A JP 18463291 A JP18463291 A JP 18463291A JP 18463291 A JP18463291 A JP 18463291A JP H0533182 A JPH0533182 A JP H0533182A
- Authority
- JP
- Japan
- Prior art keywords
- orifice plate
- orifice
- manufacturing
- substrate
- conductive substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000005266 casting Methods 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 238000005323 electroforming Methods 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000007747 plating Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- LAIZPRYFQUWUBN-UHFFFAOYSA-L nickel chloride hexahydrate Chemical compound O.O.O.O.O.O.[Cl-].[Cl-].[Ni+2] LAIZPRYFQUWUBN-UHFFFAOYSA-L 0.000 description 1
- TXRHHNYLWVQULI-UHFFFAOYSA-L nickel(2+);disulfamate;tetrahydrate Chemical compound O.O.O.O.[Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O TXRHHNYLWVQULI-UHFFFAOYSA-L 0.000 description 1
- 229910000008 nickel(II) carbonate Inorganic materials 0.000 description 1
- ZULUUIKRFGGGTL-UHFFFAOYSA-L nickel(ii) carbonate Chemical compound [Ni+2].[O-]C([O-])=O ZULUUIKRFGGGTL-UHFFFAOYSA-L 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
(57)【要約】
【目的】容易に複数のオリフィス径のばらつきが少ない
オリフィスプレートを製造し、ロット毎に常に一定のオ
リフィス径をもつオリフィスプレートを製造することを
目的とし、また、外部環境によってオリフィスパターン
が変質することなく、さらには、オリフィスプレート製
造用基板を繰り返し使用可能として、オリフィスプレー
トを製造することを目的とする。
【構成】本発明のオリフィスプレート製造法では、導電
性基板に絶縁性細軸を固着させることによって、凹凸パ
ターンを形成し、導電性基板上に電鋳皮膜を形成させ
て、導電性基板より電鋳皮膜を離型することによって、
オリフィスプレートを製造する。
(57) [Summary] [Purpose] The purpose is to easily manufacture an orifice plate with a small variation in multiple orifice diameters, and to manufacture an orifice plate that always has a constant orifice diameter for each lot. It is an object of the present invention to manufacture an orifice plate by allowing the orifice plate manufacturing substrate to be repeatedly used without changing the quality of the orifice pattern. [Structure] In the method for manufacturing an orifice plate of the present invention, an uneven thin pattern is formed by fixing an insulating thin shaft to a conductive substrate, and an electroformed film is formed on the conductive substrate. By releasing the casting film,
Manufacture the orifice plate.
Description
【0001】[0001]
【産業上の利用分野】本発明は、導電性基板上に凹凸パ
ターンを形成させ、その後、前記導電性基板上に電鋳皮
膜を形成させて、前記電鋳皮膜を前記導電性基板より離
型することによって、前記電鋳皮膜をオリフィスプレー
トとするオリフィスプレートの製造方法に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention forms a concavo-convex pattern on a conductive substrate, and then forms an electroformed film on the conductive substrate to release the electroformed film from the conductive substrate. The present invention relates to a method for manufacturing an orifice plate using the electroformed coating as an orifice plate.
【0002】[0002]
【従来の技術】オリフィスプレートは、一般に、電鋳法
によって製造されており、次のような工程で製造されて
いる。2. Description of the Related Art Orifice plates are generally manufactured by electroforming, and are manufactured by the following steps.
【0003】まず、研磨ガラス基板上にスパッタリング
法によってニッケルあるいはクロムの導電性皮膜を堆積
して、研磨ガラス基板表面に導電性を与え、導電性基板
を作製する。または、導電性基板として研磨ステンレス
基板を用いる。First, a conductive film of nickel or chromium is deposited on a polished glass substrate by a sputtering method to give conductivity to the surface of the polished glass substrate to produce a conductive substrate. Alternatively, a polished stainless substrate is used as the conductive substrate.
【0004】次に、回転遠心塗布装置に導電性基板を設
置して、導電性基板上にフォトレジストを回転遠心塗布
する。次にフォトレジスト膜上にフォトマスクを設置し
て露光し、その後、フォトレジストの現像を行って凹凸
パターンを形成し、これをオリフィスプレート製造用基
板とする。Next, a conductive substrate is set in the spin-coating apparatus, and the photoresist is spin-coated on the conductive substrate. Next, a photomask is placed on the photoresist film for exposure, and then the photoresist is developed to form a concavo-convex pattern, which is used as a substrate for manufacturing an orifice plate.
【0005】次に、オリフィスプレート製造用基板上
に、陽極酸化法やクロム酸浸漬法により離型処理を施し
(研磨ステンレス基板の場合は、離型処理を行わなくて
も良い)、オリフィスプレート製造用基板上に電鋳法に
よって40〜80μm程度のニッケル電鋳皮膜を電析し
た後、オリフィスプレート製造用基板よりニッケル電鋳
皮膜を離型し、このニッケル電鋳皮膜をオリフィスプレ
ートとしていた。Next, the orifice plate manufacturing substrate is subjected to a mold release treatment by an anodic oxidation method or a chromic acid dipping method (in the case of a polished stainless steel substrate, no mold release treatment is required), and the orifice plate is manufactured. After depositing a nickel electroformed film of about 40 to 80 μm on the substrate for electroforming by electroforming, the nickel electroformed film was released from the substrate for producing an orifice plate, and this nickel electroformed film was used as an orifice plate.
【0006】[0006]
【発明が解決しようとする課題】しかしながら、従来の
方法によるオリフィスプレートの製造方法では、導電性
基板上にオリフィスをつくるための凸パターンは、フォ
トレジストによって形成されており、電鋳が進み、電鋳
皮膜が厚くなるに連れ、電鋳皮膜はオリフィスをつくる
フォトレジストの周囲から、フォトレジスト上に徐々に
かぶさりながら電析していく。すなわち、オリフィス径
は、フォトレジスト径によって正確には拘束されていな
い。そのため、複数のオリフィス径のばらつきが少ない
オリフィスプレートを製造し、ロット毎に常に一定のオ
リフィス径をもつオリフィスプレートを製造すること
は、導電性基板表面の電流密度分布の影響や攪拌の影響
から非常に困難であった。However, in the method of manufacturing the orifice plate by the conventional method, the convex pattern for forming the orifice on the conductive substrate is formed by the photoresist, and the electroforming progresses. As the cast film becomes thicker, the electroformed film is electrodeposited from around the photoresist forming the orifice while gradually covering the photoresist. That is, the orifice diameter is not exactly constrained by the photoresist diameter. Therefore, it is extremely difficult to manufacture an orifice plate that has a small variation in the orifice diameter and always have a constant orifice diameter for each lot because of the influence of the current density distribution on the conductive substrate surface and the influence of stirring. It was difficult for me.
【0007】また、オリフィスパターンはフォトレジス
トを用いて形成されていたため、オリフィスプレートが
出来上がるまでの間に、外部環境によってフォトレジス
トが変質してしまうことがあった。そのため、精度良い
オリフィス径をもったオリフィスプレートができないこ
とがあった。Further, since the orifice pattern is formed by using the photoresist, the photoresist may be deteriorated by the external environment before the orifice plate is completed. Therefore, an orifice plate having an accurate orifice diameter may not be obtained.
【0008】さらに、オリフィスプレート製造用基板と
フォトレジストとの密着力は弱いために、電鋳皮膜形成
後に電鋳皮膜を導電性基板から離型したとき、フォトレ
ジストの一部が電鋳皮膜側に付着して、導電性基板から
剥離してしまうことがあった。それゆえ、フォトレジス
トを用いたオリフィスプレート製造用基板は、1回のオ
リフィスプレート製造にしか使用できなかった。Further, since the adhesion between the substrate for producing the orifice plate and the photoresist is weak, when the electroformed film is released from the conductive substrate after the electroformed film is formed, a part of the photoresist is on the electroformed film side. There was a case where it was adhered to and peeled off from the conductive substrate. Therefore, the orifice plate manufacturing substrate using the photoresist can be used only once for manufacturing the orifice plate.
【0009】本発明は、上記のような問題点を解決する
ためになされたものであり、複数のオリフィス径にばら
つきがなく、ロット毎に常に一定のオリフィス径をもつ
オリフィスプレートを容易に製造することができ、ま
た、外部環境によってオリフィスパターンが変質するこ
となく、さらには、オリフィスプレート製造用基板を繰
り返し使用可能な、オリフィスプレートの製造方法を提
供することを目的とする。The present invention has been made in order to solve the above problems, and easily manufactures an orifice plate having a uniform orifice diameter for each lot without variations in the orifice diameters. It is also an object of the present invention to provide a method for manufacturing an orifice plate, which does not change the quality of the orifice pattern due to the external environment, and is capable of repeatedly using the substrate for manufacturing an orifice plate.
【0010】[0010]
【課題を解決するための手段】この目的を達成するため
に本発明のオリフィスプレートの製造方法では、導電性
基板に絶縁性細軸を固着させることによって、凹凸パタ
ーンを形成し、導電性基板上に電鋳皮膜を形成させて、
導電性基板より電鋳皮膜を離型することによって、オリ
フィスプレートを製造する。In order to achieve this object, in the method for manufacturing an orifice plate of the present invention, a concavo-convex pattern is formed by fixing an insulative thin shaft to a conductive substrate to form a pattern on the conductive substrate. Forming an electroformed film on the
The orifice plate is manufactured by releasing the electroformed film from the conductive substrate.
【0011】[0011]
【作用】上記の構成を有する本発明のオリフィスプレー
ト製造法について、その作用を以下に述べる。The operation of the orifice plate manufacturing method of the present invention having the above construction will be described below.
【0012】まず、細軸を作製し、その細軸表面に絶縁
性処理を施して、絶縁性細軸を作製する。First, a thin shaft is manufactured, and an insulating treatment is applied to the surface of the thin shaft to manufacture an insulating thin shaft.
【0013】次に、導電性基板に絶縁性細軸を固着させ
ることによって、導電性基板上に凹凸パターンを形成す
る。これをオリフィスプレート製造用基板として使用す
る。Next, an insulating thin shaft is fixed to the conductive substrate to form an uneven pattern on the conductive substrate. This is used as a substrate for manufacturing an orifice plate.
【0014】そして、オリフィスプレート製造用基板上
に離型処理を施し、その後、電鋳皮膜を電析させる。電
鋳終了後、オリフィス製造用原板から電鋳皮膜を離型す
ることにより、オリフィスプレートを完成する。Then, a mold release treatment is performed on the substrate for manufacturing the orifice plate, and then the electroformed coating is electrodeposited. After the electroforming is finished, the orifice plate is completed by releasing the electroformed film from the orifice manufacturing original plate.
【0015】[0015]
【実施例】以下、本発明を具体化した一実施例を図面を
参照して説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
【0016】図1(a)〜(e)は、本発明のオリフィ
スプレート製造法を実施するための手順を示した図であ
る。1 (a) to 1 (e) are views showing the procedure for carrying out the method for manufacturing an orifice plate of the present invention.
【0017】まず、図1(a)に示すように、ニッケ
ル,クロム,ステンレス,銅,真ちゅう等の材質の導電
性基板11に0.1〜0.3mmの穴をエッチング等に
より開ける。あるいは、導電性基板11の代わりに、
0.1〜0.3mmの穴の開いた樹脂基板やセラミック
ス基板等の非導電性基板に、スパッタリング等の乾式メ
ッキ法や無電解ニッケルメッキ等の湿式メッキ法によっ
て導電性処理を施した導電性処理済基板でも良い。First, as shown in FIG. 1A, a hole of 0.1 to 0.3 mm is made by etching or the like in a conductive substrate 11 made of a material such as nickel, chromium, stainless steel, copper, or brass. Alternatively, instead of the conductive substrate 11,
Conductivity is applied to non-conductive substrates such as resin substrates and ceramics substrates with holes of 0.1 to 0.3 mm by dry plating such as sputtering or wet plating such as electroless nickel plating. It may be a processed substrate.
【0018】次に、タングステン,銅,超硬合金等の材
質の丸細軸を、ワイヤ放電研削法等によって、図1
(b)のような形状の細軸に加工し、加工後の細軸表面
に絶縁性処理を施し、絶縁性細軸13を作製する。Next, a round thin shaft made of a material such as tungsten, copper, cemented carbide, etc. is formed by a wire discharge grinding method or the like as shown in FIG.
The thin shaft having the shape as shown in (b) is processed, and the surface of the thin shaft after the processing is subjected to an insulating treatment to produce the insulating thin shaft 13.
【0019】次に、図1(c)に示したように、導電性
基板11の穴に絶縁性細軸13をはめ込み、固着するこ
とによって、オリフィスプレート製造用基板15が完成
する。Next, as shown in FIG. 1 (c), the insulating thin shaft 13 is fitted into the hole of the conductive substrate 11 and fixed thereto, whereby the orifice plate manufacturing substrate 15 is completed.
【0020】オリフィスプレート製造用基板15の表面
をまず電解洗浄し、水洗する。次に、10vol%硫酸
あるいは10vol%塩酸中にて常温で1min程度浸
漬して酸活性化処理を行い、水洗する。そして、離型溶
液中にて常温で2min程度浸漬して離型処理を行い、
水洗する。The surface of the orifice plate manufacturing substrate 15 is first electrolytically cleaned and then rinsed with water. Next, it is immersed in 10 vol% sulfuric acid or 10 vol% hydrochloric acid at room temperature for about 1 min to perform an acid activation treatment, and then washed with water. Then, a mold release treatment is performed by immersing the mold in a mold release solution at room temperature for about 2 minutes.
Wash with water.
【0021】その後、図1(d)に示すように、オリフ
ィスプレート製造用基板15上へ電鋳皮膜を形成する。
電鋳溶液には、ニッケル電鋳液を用い、その液組成は6
0%スルファミン酸ニッケル・四水和物750g/l,
塩化ニッケル・六水和物5g/l,ホウ酸35g/l,
添加剤(ピット防止用界面活性剤,応力減少剤および光
沢剤等)1〜5ml/l,pH調整剤(スルファミン酸
あるいは塩基性炭酸ニッケル)適量を加えて建浴されて
おり、50℃,pH4.0となるようにコントロールさ
れている。Thereafter, as shown in FIG. 1D, an electroformed film is formed on the orifice plate manufacturing substrate 15.
A nickel electroforming solution was used as the electroforming solution, and the solution composition was 6
0% nickel sulfamate tetrahydrate 750 g / l,
Nickel chloride hexahydrate 5 g / l, boric acid 35 g / l,
1 to 5 ml / l of additives (surfactants for pit prevention, stress reducing agents, brighteners, etc.) and pH adjusting agents (sulfamic acid or basic nickel carbonate) are added to the bath at 50 ° C, pH 4 It is controlled to be 0.0.
【0022】オリフィスプレート製造用基板15表面に
流れる総電流量をコントロールし、オリフィスプレート
製造用基板15上に電析する電鋳皮膜が所望の膜厚にな
るまで電鋳を行い、電鋳終了後、水洗し、図1(e)の
ように、オリフィスプレート製造用原板15からオリフ
ィスプレート17を離型することにより、絶縁性細軸1
3の形状を転写したオリフィス19をもつオリフィスプ
レート17が製造可能となる。After controlling the total amount of current flowing on the surface of the orifice plate manufacturing substrate 15, electroforming is performed until the electroformed film deposited on the orifice plate manufacturing substrate 15 reaches a desired film thickness, and after the electroforming is completed. By washing with water and releasing the orifice plate 17 from the orifice plate manufacturing original plate 15 as shown in FIG.
It is possible to manufacture the orifice plate 17 having the orifice 19 in which the shape of No. 3 is transferred.
【0023】さらに、繰り返してオリフィスプレート1
7を製造したい場合、オリフィスプレート製造用基板1
5を再び10vol%硫酸あるいは10vol%塩酸中
にて常温で1min程度浸漬して酸活性化処理を行い、
水洗する。そして、離型溶液中にて常温で2min程度
浸漬して離型処理を行い、水洗する。その後、図1
(d)〜(e)に示すように、オリフィスプレート製造
用基板15上へ電鋳皮膜を形成し、オリフィスプレート
製造用基板15からオリフィスプレート17を離型する
ことによって、常にこれまでに製造されたのと同じ一定
のオリフィス径をもつオリフィスプレート17が製造可
能となる。Further, the orifice plate 1 is repeated repeatedly.
Orifice plate manufacturing substrate 1 when manufacturing 7
5 is again immersed in 10 vol% sulfuric acid or 10 vol% hydrochloric acid at room temperature for about 1 min to perform acid activation treatment,
Wash with water. Then, it is immersed in a mold release solution at room temperature for about 2 minutes for mold release treatment, and then washed with water. Then, Figure 1
As shown in (d) to (e), an electroformed film is formed on the orifice plate manufacturing substrate 15 and the orifice plate 17 is released from the orifice plate manufacturing substrate 15 so that the orifice plate manufacturing substrate 15 is always manufactured so far. The orifice plate 17 having the same constant orifice diameter can be manufactured.
【0024】[0024]
【発明の効果】以上で説明した本発明のオリフィスプレ
ートの製造方法によれば、オリフィスプレートのオリフ
ィスは、絶縁性細軸の形状が転写されるため、複数のオ
リフィスのオリフィス径にはばらつきがなく、ロット毎
に常に一定のオリフィス径をもつオリフィスプレートを
容易に製造することが可能となる。According to the method of manufacturing an orifice plate of the present invention described above, since the shape of the insulating thin shaft is transferred to the orifice of the orifice plate, there is no variation in the orifice diameter of the plurality of orifices. Thus, it becomes possible to easily manufacture an orifice plate having a constant orifice diameter for each lot.
【0025】また、フォトレジストを用いずにソリッド
でオリフィスパターンを形成しているため、オリフィス
プレートが出来上がるまでの間に、外部環境によってオ
リフィスパターンが変質することがなくなるため、精度
良いオリフィス径をもつオリフィスプレートを製造する
ことができる。Further, since the solid orifice pattern is formed without using photoresist, the orifice pattern does not change due to the external environment until the orifice plate is completed. Orifice plates can be manufactured.
【0026】さらに、オリフィスプレート製造用基板
は、ソリッドで構成されているため、繰り返し使用する
ことが可能となる。Further, since the orifice plate manufacturing substrate is made of solid, it can be used repeatedly.
【図1】本発明のオリフィスプレート製造方法を実施す
るための手順を示した図である。FIG. 1 is a view showing a procedure for carrying out an orifice plate manufacturing method of the present invention.
11 導電性基板 13 絶縁性細軸 17 オリフィスプレート 11 Conductive Substrate 13 Insulating Thin Shaft 17 Orifice Plate
Claims (1)
せ、その後、前記導電性基板上に電鋳皮膜を形成させ
て、前記導電性基板より前記電鋳皮膜を離型することに
よって、前記電鋳皮膜をオリフィスプレートとするオリ
フィスプレートの製造方法において、 前記導電性基板に絶縁性細軸を固着させることによっ
て、凹凸パターンを形成し、前記導電性基板上に電鋳皮
膜を形成させて、離型することによってオリフィスプレ
ートを得ることを特徴とするオリフィスプレートの製造
方法。Claim: What is claimed is: 1. An uneven pattern is formed on a conductive substrate, and then an electroformed film is formed on the conductive substrate, and the electroformed film is released from the conductive substrate. In the method of manufacturing an orifice plate using the electroformed coating as an orifice plate, by fixing an insulating thin shaft to the conductive substrate, an uneven pattern is formed, and the electroformed coating is formed on the conductive substrate. A method for manufacturing an orifice plate, characterized in that the orifice plate is obtained by forming a mold and releasing it.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18463291A JPH0533182A (en) | 1991-07-24 | 1991-07-24 | Manufacturing method of orifice plate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18463291A JPH0533182A (en) | 1991-07-24 | 1991-07-24 | Manufacturing method of orifice plate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0533182A true JPH0533182A (en) | 1993-02-09 |
Family
ID=16156630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18463291A Pending JPH0533182A (en) | 1991-07-24 | 1991-07-24 | Manufacturing method of orifice plate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0533182A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003508638A (en) * | 1999-09-09 | 2003-03-04 | エアロジェン,インコーポレイテッド | Improved aperture plate and method for its construction and use |
-
1991
- 1991-07-24 JP JP18463291A patent/JPH0533182A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003508638A (en) * | 1999-09-09 | 2003-03-04 | エアロジェン,インコーポレイテッド | Improved aperture plate and method for its construction and use |
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