JPH05327291A - Mounting method for electronic component - Google Patents

Mounting method for electronic component

Info

Publication number
JPH05327291A
JPH05327291A JP4128485A JP12848592A JPH05327291A JP H05327291 A JPH05327291 A JP H05327291A JP 4128485 A JP4128485 A JP 4128485A JP 12848592 A JP12848592 A JP 12848592A JP H05327291 A JPH05327291 A JP H05327291A
Authority
JP
Japan
Prior art keywords
electrode
electronic component
main electrode
substrate
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4128485A
Other languages
Japanese (ja)
Inventor
Akira Matsubara
彰 松原
Takuo Hayashi
卓生 林
Yutaka Murakami
豊 村上
Tetsuo Shimamura
徹郎 島村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4128485A priority Critical patent/JPH05327291A/en
Publication of JPH05327291A publication Critical patent/JPH05327291A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To accurately mount an electronic component by previously accurately providing main and auxiliary electrodes on a board of the component, and positioning the component while measuring electric numeric values between both the electrodes. CONSTITUTION:A second auxiliary electrode 11 is formed at an opposite side to a mirror 2 to the electrode 11 and a main electrode 4 between the electrode 4 and the mirror 2 formed on a semiconductor substrate 1, and solder for fixing a semiconductor laser 3 is previously vapor-deposited on the electrodes 4, 11. Resistance meters 12, 13 for measuring resistance values between the electrodes 4, 10 and 4, 11 are provided. When the laser 3 is sucked to be moved on the substrate 1 and the resistance values are measured by the meter 12, the resistance value is reduced due to the fact that, when the laser 3 is disposed on the electrode 10, the value becomes parallel sum of the both. Since the laser 3 can be moved by a nozzle 7, a position where the values of the meters 12, 13 are maximum is discovered, and mounted. Accordingly, since it is positioned at a position having a maximum value while measuring the resistance value on the accurate electrode formed by a semiconductor process, it can be accurately mounted.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は電子部品を基板に実装す
る電子部品の実装方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component mounting method for mounting an electronic component on a substrate.

【0002】[0002]

【従来の技術】従来、基板に電子部品を精度良く実装す
る場合、基板上に基準点を設けそこから位置を参照しな
がら電子部品を動かして所定位置になったところで位置
決めしていた。
2. Description of the Related Art Conventionally, when an electronic component is mounted on a substrate with high precision, a reference point is provided on the substrate and the electronic component is moved while referring to a position from the reference point to position the electronic component at a predetermined position.

【0003】以下に従来の電子部品の実装方法を、電子
部品を半導体レーザー、基板を半導体基板として、半導
体レーザーを半導体基板上に実装する方法を例に取って
図面を参照しながら説明する。
A conventional method for mounting electronic components will be described below with reference to the drawings by taking as an example a method for mounting a semiconductor laser on a semiconductor substrate using the electronic component as a semiconductor laser and the substrate as a semiconductor substrate.

【0004】図4はかかる実装方法を説明する説明図で
あり、図4(a)は半導体基板1上に半導体レーザー3
を実装した状態を示す上面図である。
FIG. 4 is an explanatory view for explaining such a mounting method. FIG. 4A shows a semiconductor laser 3 on the semiconductor substrate 1.
It is a top view which shows the state which mounted.

【0005】図4(a)において2は半導体基板1をエ
ツチングして作成したミラーであり、半導体レーザー3
はミラー2に対して、所定の距離に50μm程度の精度
で実装する必要がある。
In FIG. 4A, reference numeral 2 is a mirror formed by etching the semiconductor substrate 1, and the semiconductor laser 3
Must be mounted on the mirror 2 at a predetermined distance with an accuracy of about 50 μm.

【0006】4は半導体基板1上に形成した電極であ
り、半導体レーザー3を実装する土台、半導体レーザー
3への給電、及び放熱の機能を持っており、給電のため
の端子5につながっている。
Reference numeral 4 denotes an electrode formed on the semiconductor substrate 1, which has a base for mounting the semiconductor laser 3, a function of supplying power to the semiconductor laser 3 and a function of heat dissipation, and is connected to a terminal 5 for supplying power. ..

【0007】図4(b)は半導体基板1上に半導体レー
ザー3を実装する際の側面図である。図4(b)におい
て、7は実装装置のノズルである。ノズル7で半導体レ
ーザー3を吸引して半導体基板1の端面6とノズル7の
中心の距離を測定しながらノズル7を動かし、所定の距
離になったところで、半導体基板1上にあらかじめ形成
されている電極5の上に位置決めして固定する。
FIG. 4B is a side view when the semiconductor laser 3 is mounted on the semiconductor substrate 1. In FIG. 4B, 7 is a nozzle of the mounting apparatus. The semiconductor laser 3 is sucked by the nozzle 7 and the nozzle 7 is moved while measuring the distance between the end face 6 of the semiconductor substrate 1 and the center of the nozzle 7. When a predetermined distance is reached, the semiconductor laser 3 is preformed on the semiconductor substrate 1. It is positioned and fixed on the electrode 5.

【0008】このようにノズル7で半導体レーザー3を
端面6に対して位置決めすることにより、半導体レーザ
ー3を半導体基板1上に実装できることとなる。
By thus positioning the semiconductor laser 3 with respect to the end face 6 by the nozzle 7, the semiconductor laser 3 can be mounted on the semiconductor substrate 1.

【0009】[0009]

【発明が解決しようとする課題】しかし、かかる従来の
電子部品の実装方法では、半導体基板1の端面6からの
距離を測定する方法として、目視または光学的手段によ
り測定するため、精度の良い実装ができないという課題
を有していた。
However, in such a conventional mounting method of electronic components, since the distance from the end face 6 of the semiconductor substrate 1 is measured by visual inspection or optical means, mounting with high precision is achieved. It had a problem that it could not be done.

【0010】本発明は上記従来例の問題点を解決するも
ので、容易に精度良く実装できる電子部品の実装方法を
提供することを目的とする。
The present invention solves the above-mentioned problems of the conventional example, and an object of the present invention is to provide a mounting method of electronic parts which can be mounted easily and accurately.

【0011】[0011]

【課題を解決するための手段】この目的を達成するため
に本発明の電子部品の実装方法は、電子部品の基板にあ
らかじめ、主電極と補助電極を精度良く設け、両者間の
電気的数値を測定しながら電極に対して位置決めして実
装するものである。
In order to achieve this object, a method of mounting an electronic component according to the present invention is such that a main electrode and an auxiliary electrode are accurately provided in advance on a substrate of an electronic component, and an electric value between them is calculated. It is mounted by positioning with respect to the electrode while measuring.

【0012】[0012]

【作用】この実装方法によって、精度の良い電極に対し
て電子部品の位置を電気的数値により確認しながら位置
決めすることができるために、電子部品を高精度に実装
することができる。
According to this mounting method, the position of the electronic component can be positioned with respect to the electrode with high accuracy while confirming the position by an electric value, so that the electronic component can be mounted with high precision.

【0013】[0013]

【実施例】以下本発明の一実施例について図面を参照し
ながら説明する。図1は本発明の一実施例における電子
部品の実装方法を示す説明図である。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is an explanatory diagram showing a method of mounting electronic components according to an embodiment of the present invention.

【0014】半導体レーザーを半導体基板の電極上に実
装する例について説明する。図1(a)は半導体基板1
の上面図である。図1(a)において、半導体基板1上
に作成した主電極4とミラー2の間に補助電極10及び
主電極4に対してミラー2と反対側に第2の補助電極1
1を作成している。主電極4及び補助電極11にはあら
かじめ半導体レーザー3を固定するための半田を蒸着し
ておく。
An example of mounting the semiconductor laser on the electrodes of the semiconductor substrate will be described. FIG. 1A shows a semiconductor substrate 1.
FIG. In FIG. 1A, between the main electrode 4 and the mirror 2 formed on the semiconductor substrate 1, the auxiliary electrode 10 and the second auxiliary electrode 1 on the side opposite to the mirror 2 with respect to the main electrode 4.
1 is created. Solder for fixing the semiconductor laser 3 is vapor-deposited on the main electrode 4 and the auxiliary electrode 11 in advance.

【0015】また、主電極4と補助電極10の間の抵抗
値を測定するための抵抗計12、主電極4と補助電極1
1の間の抵抗値を測定するための抵抗計13を備えた装
置で実装を行う。
A resistance meter 12 for measuring the resistance value between the main electrode 4 and the auxiliary electrode 10, the main electrode 4 and the auxiliary electrode 1
Mounting is performed by an apparatus equipped with a resistance meter 13 for measuring the resistance value between 1 and 1.

【0016】半導体基板1上に形成する主電極4及び補
助電極10,11は半導体製造プロセスのエッチング工
程で製作することができるので、補助電極10,11間
の位置精度は、1μm程度の精度まで上げることができ
る。この精度の良い電極を用いて半導体レーザー3を精
度良く実装する方法を説明する。
Since the main electrode 4 and the auxiliary electrodes 10 and 11 formed on the semiconductor substrate 1 can be manufactured by the etching process of the semiconductor manufacturing process, the positional accuracy between the auxiliary electrodes 10 and 11 can be up to about 1 μm. Can be raised. A method of mounting the semiconductor laser 3 with high accuracy using the electrodes with high accuracy will be described.

【0017】図1(b),(c),(d)はかかる半導
体基板1に半導体レーザー3を高精度に実装する方法を
示す説明図である。
FIGS. 1B, 1C and 1D are explanatory views showing a method of mounting the semiconductor laser 3 on the semiconductor substrate 1 with high accuracy.

【0018】図1(b)において、半導体レーザー3を
吸引して半導体基板1上を動かし、主電極4と補助電極
10の間の抵抗値を抵抗計12で測定すると、半導体レ
ーザー3が補助電極10上に位置するときには、抵抗計
12の抵抗値が半導体基板1と半導体レーザー3の抵抗
値の並列和になり抵抗値が減少する。従って、ノズル7
で矢印の方向に半導体レーザー3を動かす必要が出てく
る。
In FIG. 1B, when the semiconductor laser 3 is sucked and moved on the semiconductor substrate 1 and the resistance value between the main electrode 4 and the auxiliary electrode 10 is measured by the ohmmeter 12, the semiconductor laser 3 shows the auxiliary electrode. When it is positioned above 10, the resistance value of the resistance meter 12 becomes the parallel sum of the resistance values of the semiconductor substrate 1 and the semiconductor laser 3, and the resistance value decreases. Therefore, the nozzle 7
Then, it becomes necessary to move the semiconductor laser 3 in the direction of the arrow.

【0019】図1(c)のように半導体レーザー3が補
助電極11上にさしかかると、今度は抵抗計13の抵抗
値が減少するので、図1(b)とは逆の矢印の方向にノ
ズル7で半導体レーザー3を動かせばよい。このよう
に、ノズル7を動かしながら、抵抗計12と抵抗計13
の値が極大値となる場所をみつけながら実装すればよ
い。
When the semiconductor laser 3 reaches the auxiliary electrode 11 as shown in FIG. 1 (c), the resistance value of the ohmmeter 13 decreases, so that the nozzle is moved in the direction of the arrow opposite to that in FIG. 1 (b). The semiconductor laser 3 may be moved at 7. In this way, the resistance meter 12 and the resistance meter 13 are moved while moving the nozzle 7.
It should be implemented while finding the place where the value of becomes maximum.

【0020】図(d)は上記のようにして半導体レーザ
ー3を補助電極10と補助電極11の間の主電極4上に
位置決めした状態を示す。この状態で半導体基板1を加
熱すると、電極上に蒸着した半田が溶けて半導体レーザ
ー3を固定でき、半導体レーザー3をミラー2に対して
精度良く実装できることとなる。
FIG. 3D shows a state in which the semiconductor laser 3 is positioned on the main electrode 4 between the auxiliary electrodes 10 and 11 as described above. When the semiconductor substrate 1 is heated in this state, the solder evaporated on the electrodes is melted and the semiconductor laser 3 can be fixed, and the semiconductor laser 3 can be mounted on the mirror 2 with high accuracy.

【0021】上記の実装方法によって半導体プロセスで
作成した高精度な電極上に抵抗値を測定しながら抵抗値
の極大値をみつけながら位置決めし実装することで、半
導体レーザー3を主電極4上に精度良く実装することが
できる。
The semiconductor laser 3 is mounted on the main electrode 4 with high accuracy by positioning and mounting while finding the maximum value of the resistance value while measuring the resistance value on the highly accurate electrode created by the semiconductor process by the above mounting method. It can be implemented well.

【0022】以下本発明の第2の実施例における電子部
品の実装方法について図を参照しながら説明する。図2
(a)は半導体基板1上に半導体レーザー3を実装した
状態を示す上面図である。第1の実施例と違うところ
は、主電極4、補助電極10,11の間隔を縮めて各電
極にまたがるように半導体レーザー3を実装している点
である。
A method of mounting electronic components according to the second embodiment of the present invention will be described below with reference to the drawings. Figure 2
FIG. 3A is a top view showing a state in which the semiconductor laser 3 is mounted on the semiconductor substrate 1. The difference from the first embodiment is that the semiconductor laser 3 is mounted such that the main electrode 4 and the auxiliary electrodes 10 and 11 are shortened so as to extend over the respective electrodes.

【0023】図2(b),(c),(d)を用いてかか
る半導体基板1上に半導体レーザー3を高精度に実装す
る方法について説明する。
A method of mounting the semiconductor laser 3 on the semiconductor substrate 1 with high precision will be described with reference to FIGS. 2 (b), 2 (c) and 2 (d).

【0024】先ず、抵抗計12と抵抗計13により、主
電極4とそれぞれ補助電極10,11間の抵抗値を測定
する。その値をそれぞれr1,r2として記録する。
First, the resistance value between the main electrode 4 and the auxiliary electrodes 10 and 11 is measured by the resistance meter 12 and the resistance meter 13. The values are recorded as r1 and r2, respectively.

【0025】つぎに、図2(b)のようにノズル7で半
導体レーザー3を吸引して主電極4上に乗せて左右に移
動する。
Next, as shown in FIG. 2 (b), the semiconductor laser 3 is sucked by the nozzle 7 and placed on the main electrode 4 and moved left and right.

【0026】そのときに各抵抗計12,13の抵抗値を
測定してその値をR1,R2とする。(r1−R1)−
(r2−R2)の値が0となるようにノズル7を動か
す。
At this time, the resistance values of the ohmmeters 12 and 13 are measured and the values are set to R1 and R2. (R1-R1)-
The nozzle 7 is moved so that the value of (r2-R2) becomes zero.

【0027】図2(b)は半導体レーザー3が補助電極
10側に偏っているため、(r1−R1)の方が(r2
−R2)よりも抵抗値が小さい。
Since the semiconductor laser 3 is biased toward the auxiliary electrode 10 side in FIG. 2B, (r1-R1) is (r2).
-R2) has a smaller resistance value.

【0028】図2(c)のように半導体レーザー3が補
助電極11側に偏ると今度は(r2−R2)の方が(r
1−R1)よりも小さくなる。従って各抵抗値を測定し
ながら矢印の方向にノズル7を動かすことにより、半導
体レーザー3を主電極4上に位置決めできることとな
り、高精度の実装ができることとなる。
When the semiconductor laser 3 is biased toward the auxiliary electrode 11 side as shown in FIG. 2C, (r2-R2) is now (r2-R2).
1-R1). Therefore, by moving the nozzle 7 in the direction of the arrow while measuring each resistance value, the semiconductor laser 3 can be positioned on the main electrode 4, and high-precision mounting can be achieved.

【0029】上記の実装方法によって半導体プロセスで
作成した高精度な電極上に抵抗値を測定しながら実装す
ることで、半導体レーザー3を主電極4上に精度良く実
装することができる。
The semiconductor laser 3 can be mounted on the main electrode 4 with high accuracy by mounting the semiconductor laser 3 on the high-precision electrode created by the semiconductor process while measuring the resistance value by the mounting method described above.

【0030】さらに、主電極4と補助電極10及び補助
電極11に半導体レーザー3がまたがるように動かすこ
とで抵抗値が連続的に変化するため抵抗値の変化を測定
しながらノズル7を動かすための機械化が容易である。
Further, since the resistance value is continuously changed by moving the semiconductor laser 3 so as to straddle the main electrode 4, the auxiliary electrode 10 and the auxiliary electrode 11, the nozzle 7 is moved while measuring the change in the resistance value. Easy to mechanize.

【0031】さらに、最初に抵抗値r1,r2を測定し
ておき、位置決め時に測定する抵抗値を引算すること
で、抵抗値が0になるように位置決めするために、抵抗
計の出力とノズルの動きを制御するための制御回路が容
易に構成できる。
Further, the resistance values r1 and r2 are first measured, and the resistance value measured at the time of positioning is subtracted to perform positioning so that the resistance value becomes 0. A control circuit for controlling the movement of the can be easily configured.

【0032】以下本発明の第3の実施例を示す。図3は
本発明の電子部品の実装方法を示す。図3は半導体基板
1をリード線群に高精度に実装する時の上面図である。
図3において、20は半導体基板1を包むためのパッケ
ージであり、半導体基板1に給電するためのリード線を
21,22,23で示している。
The third embodiment of the present invention will be described below. FIG. 3 shows a mounting method of the electronic component of the present invention. FIG. 3 is a top view when the semiconductor substrate 1 is mounted on the lead wire group with high accuracy.
In FIG. 3, reference numeral 20 denotes a package for enclosing the semiconductor substrate 1, and lead wires 21, 22 and 23 for supplying power to the semiconductor substrate 1 are shown.

【0033】半導体基板1をパッケージ20に精度良く
実装するために、リード線22と23、及び21と23
の間の抵抗値を測定する抵抗計24,25を設けて抵抗
値を測定しながら半導体基板1を矢印の方向に動かすこ
とで、精度良くリード線22と23の間に位置決めして
実装することが可能となる。
In order to mount the semiconductor substrate 1 on the package 20 with high precision, the lead wires 22 and 23, and 21 and 23.
Between the lead wires 22 and 23 with high precision by mounting the ohmmeters 24 and 25 for measuring the resistance value between the two and moving the semiconductor substrate 1 in the direction of the arrow while measuring the resistance value. Is possible.

【0034】上記の実装方法によってリード線間の抵抗
値を測定しながら半導体基板1を位置決めすることで半
導体基板1を高精度に実装することができる。
By positioning the semiconductor substrate 1 while measuring the resistance value between the lead wires by the above mounting method, the semiconductor substrate 1 can be mounted with high precision.

【0035】なお、第1の実施例において主電極4と補
助電極10,11の電気的数値として抵抗値として1
2,13を抵抗計としたが、電気的数値は誘電率でもよ
い。この場合12,13は誘電率計となり、この場合実
装する電子部品は半導体でない場合にも応用できること
となる。
In the first embodiment, the electrical value of the main electrode 4 and the auxiliary electrodes 10 and 11 is 1 as the resistance value.
Although 2 and 13 are resistance meters, the electric value may be the dielectric constant. In this case, 12 and 13 are dielectric constant meters, and in this case, the electronic parts to be mounted can be applied even when they are not semiconductors.

【0036】[0036]

【発明の効果】以上のように本発明の電子部品の実装方
法は精度良く形成された主電極と補助電極の電気的数値
を測定しながら電子部品を動かして位置決めすることに
より、電子部品を精度良く実装することができる。
As described above, the method of mounting an electronic component according to the present invention can accurately position the electronic component by moving and positioning the electronic component while measuring the electrical numerical values of the main electrode and the auxiliary electrode that are accurately formed. It can be implemented well.

【図面の簡単な説明】[Brief description of drawings]

【図1】(a)〜(d)本発明の一実施例における電子
部品の実装方法を示す説明図
1A to 1D are explanatory views showing a mounting method of an electronic component in an embodiment of the present invention.

【図2】(a)〜(d)本発明の第2の実施例における
電子部品の実装方法を示す説明図
2A to 2D are explanatory views showing a mounting method of an electronic component according to a second embodiment of the present invention.

【図3】本発明の第3の実施例における電子部品の実装
方法を示す説明図
FIG. 3 is an explanatory diagram showing a mounting method of electronic components according to a third embodiment of the present invention.

【図4】(a)〜(b)従来の電子部品の実装方法を示
す説明図
4A and 4B are explanatory views showing a conventional mounting method for electronic components.

【符号の説明】[Explanation of symbols]

1 半導体基板 3 半導体レーザー 4 主電極 7 ノズル 10 補助電極 11 補助電極 12 抵抗計 13 抵抗計 21 リード線 1 Semiconductor Substrate 3 Semiconductor Laser 4 Main Electrode 7 Nozzle 10 Auxiliary Electrode 11 Auxiliary Electrode 12 Resistance Meter 13 Resistance Meter 21 Lead Wire

フロントページの続き (72)発明者 島村 徹郎 大阪府門真市大字門真1006番地 松下電器 産業株式会社内Continued Front Page (72) Inventor Tetsuro Shimamura 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】基板の表面に主電極と補助電極を設け、電
子部品を前記基板上に置き、前記主電極と前記補助電極
間の電気的数値を参照しながら前記電子部品を動かし、
前記電気的数値が所定の値になったところで前記主電極
上に前記電子部品を位置決めして実装する電子部品の実
装方法。
1. A main electrode and an auxiliary electrode are provided on a surface of a substrate, an electronic component is placed on the substrate, and the electronic component is moved while referring to an electric value between the main electrode and the auxiliary electrode,
A method of mounting an electronic component, wherein the electronic component is positioned and mounted on the main electrode when the electrical value reaches a predetermined value.
【請求項2】基板の表面に主電極と補助電極を設け、前
記主電極と前記補助電極の数値を予め測定した後、電子
部品を前記基板上に置き、前記主電極と前記補助電極間
の電気的数値を参照しながら前記電子部品を動かし、前
記電気的数値と予め測定した電気的数値の差が所定数値
になったところで前記主電極上に前記実装する電子部品
を位置決めして実装する電子部品の実装方法。
2. A main electrode and an auxiliary electrode are provided on the surface of a substrate, and after the numerical values of the main electrode and the auxiliary electrode are measured in advance, an electronic component is placed on the substrate, and between the main electrode and the auxiliary electrode. An electronic device that moves the electronic component while referring to the electrical value, and positions and mounts the electronic component to be mounted on the main electrode when the difference between the electrical value and the previously measured electrical value reaches a predetermined value. How to mount parts.
【請求項3】基板の表面に主電極と補助電極を設け、前
記主電極上または電子部品に半田メッキを施し、前記電
子部品を前記基板上に置き、前記主電極と前記補助電極
間の電気的数値を参照しながら前記電子部品を動かし、
前記電気的数値が所定の値になったところで前記主電極
上に前記電子部品を位置決めして加熱し、前記半田メッ
キを溶かして固定し実装する電子部品の実装方法。
3. A main electrode and an auxiliary electrode are provided on a surface of a substrate, the main electrode or an electronic component is solder-plated, the electronic component is placed on the substrate, and an electrical connection between the main electrode and the auxiliary electrode is provided. Move the electronic components while referring to the numerical values,
A method for mounting an electronic component, wherein the electronic component is positioned and heated on the main electrode when the electrical value reaches a predetermined value, and the solder plating is melted and fixed to be mounted.
JP4128485A 1992-05-21 1992-05-21 Mounting method for electronic component Pending JPH05327291A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4128485A JPH05327291A (en) 1992-05-21 1992-05-21 Mounting method for electronic component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4128485A JPH05327291A (en) 1992-05-21 1992-05-21 Mounting method for electronic component

Publications (1)

Publication Number Publication Date
JPH05327291A true JPH05327291A (en) 1993-12-10

Family

ID=14985918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4128485A Pending JPH05327291A (en) 1992-05-21 1992-05-21 Mounting method for electronic component

Country Status (1)

Country Link
JP (1) JPH05327291A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0923099A (en) * 1995-07-04 1997-01-21 Nec Corp Semiconductor component and its mounting method
KR19980084240A (en) * 1997-05-22 1998-12-05 윤종용 Collision Detection Device
DE10100180A1 (en) * 2001-01-04 2002-07-18 Siemens Ag Circuit board with connection pads for connecting to electronic component has measurement pads next to connection pads and connected to at least one connection pad or evaluation circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0923099A (en) * 1995-07-04 1997-01-21 Nec Corp Semiconductor component and its mounting method
KR19980084240A (en) * 1997-05-22 1998-12-05 윤종용 Collision Detection Device
DE10100180A1 (en) * 2001-01-04 2002-07-18 Siemens Ag Circuit board with connection pads for connecting to electronic component has measurement pads next to connection pads and connected to at least one connection pad or evaluation circuit

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