JPH05326795A - Semiconductor device lead frame - Google Patents

Semiconductor device lead frame

Info

Publication number
JPH05326795A
JPH05326795A JP4132528A JP13252892A JPH05326795A JP H05326795 A JPH05326795 A JP H05326795A JP 4132528 A JP4132528 A JP 4132528A JP 13252892 A JP13252892 A JP 13252892A JP H05326795 A JPH05326795 A JP H05326795A
Authority
JP
Japan
Prior art keywords
heat spreader
lead frame
semiconductor device
adhesive
thermoplastic adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4132528A
Other languages
Japanese (ja)
Inventor
Takashi Suzumura
村 隆 志 鈴
Toshio Kawamura
村 敏 雄 川
Tatsuya Otaka
高 達 也 大
Yasuharu Kameyama
山 康 晴 亀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP4132528A priority Critical patent/JPH05326795A/en
Publication of JPH05326795A publication Critical patent/JPH05326795A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PURPOSE:To obtain a semiconductor device lead frame which is enhanced in reliability preventing gas which causes corrosion from occurring and kept high in bonding strength in an after process such as a bonding process of high temperature and where a semiconductor chip can be easily mounted in a short time. CONSTITUTION:A semiconductor device lead frame 3 is provided with a heat dissipating heat spreader 2 formed on a signal layer 1, a film member 7 possessed of thermoplastic adhesive agent whose glass transition temperature is 170 deg.C to 270 deg.C on both its sides is interposed between the signal layer 1 and the heat spreader 2, and the signal layer 1 and the heat spreader 2 are bonded to each other by the thermoplastic adhesive agent. It is preferable that the glass transition temperature of thermoplastic adhesive agent is set to 220 deg.C to 250 deg.C, and the thermoplastic adhesive agent is formed of polyimide, polyether amide, polyether amide-imide or the like.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】この発明は、半導体装置用リード
フレーム、特に、放熱用のヒートスプレッダを有し、こ
のヒートスプレッダを接着剤によって信号層に接着する
リードフレームに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame for a semiconductor device, and more particularly to a lead frame having a heat spreader for radiating heat and bonding the heat spreader to a signal layer with an adhesive.

【０００２】[0002]

【従来の技術】近年の半導体装置は、高速、高密度化が
著しく、その発熱量も大きくなっているため、放熱用の
ヒートスプレッダが設けられる。そして、高密度実装さ
れた半導体装置では、インナリードの数が増大するた
め、リードフレームと別個に成形されたヒートスプレッ
ダをリードフレームに設ける。2. Description of the Related Art In recent semiconductor devices, a high speed and a high density have been achieved remarkably, and the amount of generated heat is also large. Therefore, a heat spreader for heat dissipation is provided. In a high-density mounted semiconductor device, the number of inner leads increases, so a heat spreader formed separately from the lead frame is provided on the lead frame.

【０００３】この種のリードフレームとしては、従来、
図５あるいは図６に示すようなものが知られる。前者の
図５に示す半導体装置は、リードフレーム３のインナリ
ード１上にヒートスプレッダ２を接着あるいはカシメに
よって設け、このヒートスプレッダ２の裏面に半導体チ
ップ５を搭載し、半導体チップ５の電極とインナリード
１とをボンディングワイヤ１０で接続し、半導体チップ
５をヒートスプレッダ２とともに樹脂１１で封止する。
また、後者の図６に示す半導体装置は、前者と同様にカ
シメあるいは接着によって設けたヒートスプレッダ２を
封止樹脂１１から露出させ、より高い放熱特性を得る。As a lead frame of this type, conventionally,
A device as shown in FIG. 5 or 6 is known. In the former semiconductor device shown in FIG. 5, the heat spreader 2 is provided on the inner lead 1 of the lead frame 3 by adhesion or caulking, the semiconductor chip 5 is mounted on the back surface of the heat spreader 2, and the electrodes of the semiconductor chip 5 and the inner lead 1 are mounted. Are connected with a bonding wire 10, and the semiconductor chip 5 is sealed with a resin 11 together with the heat spreader 2.
In the latter semiconductor device shown in FIG. 6, the heat spreader 2 provided by caulking or bonding is exposed from the sealing resin 11 as in the former, and higher heat dissipation characteristics are obtained.

【０００４】そして、ヒートスプレッダ２を接着によっ
て設ける場合は、図７に示すように、ヒートスプレッダ
２とインナリード１との間に接着剤付きのフィルム部材
７を介設し、このフィルム部材７の接着剤でヒートスプ
レッダ２とインナリード１とを接着する。このフィルム
部材７の基材としてはポリイミドフィルムが用いられ、
接着剤としてはアクリル系あるいはエポキシ系接着剤が
用いられる。When the heat spreader 2 is provided by adhesion, a film member 7 with an adhesive is provided between the heat spreader 2 and the inner lead 1 as shown in FIG. The heat spreader 2 and the inner lead 1 are bonded together. A polyimide film is used as the base material of the film member 7,
An acrylic or epoxy adhesive is used as the adhesive.

【０００５】また、カシメによって設ける場合は、図８
に示すように、リードフレーム３の一部のインナリード
１先端に孔を、ヒートスプレッダ２の端部に凸部６を形
成し、このヒートスプレッダ２の凸部６をインナリード
１の孔に嵌合させヒートスプレッダ２とインナリード１
とを固定する。When the caulking is used, the structure shown in FIG.
As shown in FIG. 3, a hole is formed at the tip of the inner lead 1 of a part of the lead frame 3, and a convex portion 6 is formed at the end of the heat spreader 2, and the convex portion 6 of the heat spreader 2 is fitted into the hole of the inner lead 1. Heat spreader 2 and inner lead 1
Fix and.

【０００６】[0006]

【発明が解決しようとする課題】しかしながら、図７に
示すヒートスプレッダ２を接着によってインナリード１
に固定するものは、十分な接着力を得るためにキュアが
不可欠で、製造時間が長くなり、工数も増大するという
問題がある。また、キュアの際には、接着剤からガスが
発生し、このガスがリードフレーム３に付着、吸着さ
れ、汚染の原因になるという問題がある。特に、このガ
スがワイヤボンディングのための金、銀等のメッキ部に
吸着されるとワイヤボンディング性を大幅に低下させて
不圧着等の不良事故の原因となり、また、全体が汚染さ
れると樹脂モールド後においてリード間電流リーク、Ａ
ｌパッド部の腐食の原因となり、信頼性の低下をもたら
す。However, the heat spreader 2 shown in FIG. 7 is bonded to the inner lead 1 by bonding.
In the case of the one fixed to, the curing is indispensable in order to obtain a sufficient adhesive force, and there is a problem that the manufacturing time becomes long and the man-hour also increases. Further, during curing, a gas is generated from the adhesive, and this gas adheres to and is adsorbed on the lead frame 3 to cause contamination. In particular, if this gas is adsorbed by the plated portion of gold, silver, etc. for wire bonding, the wire bondability will be significantly reduced, causing a defective accident such as non-bonding, and if the whole is contaminated, the resin Current leakage between leads after molding, A
This will cause corrosion of the l-pad portion and reduce reliability.

【０００７】また、図８に示すカシメでヒートスプレッ
ダ２を固定するものは、リードフレーム３のピン数が多
くなると、リードフレーム３のインナリード１にカシメ
用の孔等を形成することが困難で多ピン化の障害とな
り、また、リードフレーム３とヒートスプレッダ２との
間にスペーサが無いため、リードフレーム３とヒートス
プレッダ２との間隔を大きくしてヒートスプレッダと他
のインナリードとの間の接触を防止しなければならず、
全体としての厚さが大きくなるという問題がある。この
発明は、上記問題に鑑みてなされたもので、製造工程を
簡素化でき、また、高い信頼性を得られ、さらに、小型
化を図ることができる半導体装置用リードフレームを提
供することを目的とする。In the case of fixing the heat spreader 2 by crimping shown in FIG. 8, when the number of pins of the lead frame 3 increases, it is difficult to form a hole for crimping or the like in the inner lead 1 of the lead frame 3. This is an obstacle to pinning, and since there is no spacer between the lead frame 3 and the heat spreader 2, the gap between the lead frame 3 and the heat spreader 2 is increased to prevent contact between the heat spreader and other inner leads. Must be
There is a problem that the total thickness becomes large. The present invention has been made in view of the above problems, and an object thereof is to provide a lead frame for a semiconductor device, which can simplify the manufacturing process, can obtain high reliability, and can be downsized. And

【０００８】[0008]

【課題を解決するための手段】上記目的を達成するた
め、この発明は、信号層に放熱用のヒートスプレッダを
設けた半導体装置用リードフレームにおいて、両面にガ
ラス転移温度が１７０℃〜２７０℃の熱可塑性接着剤を
有するフィルム部材を前記信号層と前記ヒートスプレッ
ダとの間に介設し、このフィルム部材の両面の接着剤で
前記信号層と前記ヒートスプレッダとを接着した。そし
て、この発明は、熱可塑性接着剤としてポリイミド、ポ
リエーテルアミドあるいはポリエーテルアミドイミドを
用いる態様に構成でき、また、望ましくは、ガラス転移
温度が２２０℃〜２５０℃の熱可塑性樹脂を用いる。To achieve the above object, the present invention provides a semiconductor device lead frame having a signal layer provided with a heat spreader for heat dissipation, and has a glass transition temperature of 170 ° C. to 270 ° C. on both surfaces. A film member having a plastic adhesive was interposed between the signal layer and the heat spreader, and the signal layer and the heat spreader were bonded with the adhesive on both sides of the film member. And this invention can be comprised in the aspect which uses polyimide, polyether amide, or polyether amide imide as a thermoplastic adhesive agent, Moreover, it is desirable to use the thermoplastic resin whose glass transition temperature is 220 to 250 degreeC.

【０００９】[0009]

【作用】この発明の半導体装置用リードフレームは、熱
可塑性接着剤を用いてヒートスプレッダを信号層に接着
するため、ヒートスプレッダの固定が容易で製造工程を
簡素化でき、全体としての厚さが大きくなることもなく
小型化を図れ、後にガスが発生することもなく高い信頼
性を得られる。そして、ガラス転移温度が１７０℃〜２
７０℃の熱可塑性接着剤を用いるため、ヒートスプレッ
ダの接着後にチップボンディング、ワイヤボンディング
およびモールド等の工程で温度が上昇してもヒートスプ
レッダと信号層との接着力が低下せず、不良の発生を防
止できる。また、ワイヤボンディングを超音波で行う場
合にも、高い弾性率を維持でき、超音波エネルギを消費
せず高い効率を達成できる。In the semiconductor device lead frame of the present invention, the heat spreader is adhered to the signal layer by using the thermoplastic adhesive, so that the heat spreader can be fixed easily, the manufacturing process can be simplified, and the overall thickness becomes large. It can be miniaturized without any problems, and high reliability can be obtained without generating gas later. And, the glass transition temperature is 170 ° C. to 2
Since a 70 ° C thermoplastic adhesive is used, the adhesive strength between the heat spreader and the signal layer does not decrease even if the temperature rises in the steps such as chip bonding, wire bonding and molding after the heat spreader is bonded, preventing the occurrence of defects. it can. Further, even when wire bonding is performed by ultrasonic waves, a high elastic modulus can be maintained, and high efficiency can be achieved without consuming ultrasonic energy.

【００１０】[0010]

【実施例】以下、この発明の実施例を図面を参照して説
明する。図１および図２はこの発明の一実施例にかかる
半導体装置用リードフレームを表し、図１が四分割した
４分の１の部分の平面図、図２は使用されるフィルム部
材の断面図である。なお、上述した従来のものと同一の
部分には同一の番号を付し、その説明および一部の図示
を割愛する。Embodiments of the present invention will be described below with reference to the drawings. 1 and 2 show a lead frame for a semiconductor device according to an embodiment of the present invention. FIG. 1 is a plan view of a quarter portion of FIG. 1, and FIG. 2 is a sectional view of a film member used. is there. It should be noted that the same parts as those of the conventional one described above are denoted by the same reference numerals, and the description and part of the drawings are omitted.

【００１１】図１において、リードフレーム３は熱伝導
率が高い銅合金材からなり、厚さが０．１５ｍｍ、ピン
数が２０４である（ただし、図面中では省略する）。こ
のリードフレーム３にはインナリード１がリードピッチ
０．２４で形成され、インナリード１の先端部分にヒー
トスプレッダ２が設けられている。In FIG. 1, the lead frame 3 is made of a copper alloy material having a high thermal conductivity, and has a thickness of 0.15 mm and a pin count of 204 (however, it is omitted in the drawing). Inner leads 1 are formed on the lead frame 3 at a lead pitch of 0.24, and a heat spreader 2 is provided at the tip of the inner leads 1.

【００１２】ヒートスプレッダ２は、前述した図５およ
び図６に示すように、インナリード１との間に両面に接
着剤付きのフィルム部材７が介設され、このフィルム部
材７の接着剤によってインナリード１に固定される（後
述する）。このヒートスプレッダ２には、半導体チップ
５がエポキシ樹脂等のペースト４によって固定される。As shown in FIGS. 5 and 6, the heat spreader 2 is provided with a film member 7 having adhesive on both sides between the inner lead 1 and the inner lead 1, and the adhesive of the film member 7 is used for the inner lead 1. It is fixed to 1 (described later). A semiconductor chip 5 is fixed to the heat spreader 2 with a paste 4 such as an epoxy resin.

【００１３】ヒートスプレッダ２は、厚さが１．５ｍｍ
の純銅、あるいは厚さが０．２ｍｍの純銅から構成され
る。ただし、純銅からなるヒートスプレッダ２は厚さが
０．２ｍｍ以上であれば放熱特性が大きな影響を受けな
いことが本発明者の実験により判明している。そして、
厚さが１．５ｍｍのヒートスプレッダ２は図６に示すよ
うに封止樹脂１１から露呈するように用いることで５Ｗ
程度の高い放熱特性を得られ、また、厚さが０．２ｍｍ
のヒートスプレッダ２は図５に示すように封止樹脂１１
に埋め込むように用いることで１〜２Ｗ程度の放熱特性
を得られる。The heat spreader 2 has a thickness of 1.5 mm.
Or pure copper having a thickness of 0.2 mm. However, the heat spreader 2 made of pure copper has been found by experiments by the present inventor to have no significant effect on the heat dissipation characteristics as long as the thickness is 0.2 mm or more. And
The heat spreader 2 having a thickness of 1.5 mm is exposed to the sealing resin 11 as shown in FIG.
High heat dissipation characteristics are obtained, and the thickness is 0.2 mm.
The heat spreader 2 has a sealing resin 11 as shown in FIG.
The heat radiation characteristic of about 1 to 2 W can be obtained by embedding it in the.

【００１４】フィルム部材７は、図２に示すように、ポ
リイミドから成り５０μｍの厚さを有するフィルム基材
８の表裏両面に、それぞれ接着剤９，９を２０μｍの厚
さに設けて構成される。これら接着剤９は、ガラス転移
温度が２３０℃の熱可塑性接着剤、例えば、ポリイミ
ド、ポリエーテルアミドあるいはポリエーテルアミドイ
ミドから構成され、ガラス転移温度以下において２×１
０10ｄｙｎｅ／ｃｍ2 の弾性率を維持する。As shown in FIG. 2, the film member 7 is formed by providing adhesives 9 and 20 with a thickness of 20 μm on both front and back surfaces of a film base material 8 made of polyimide and having a thickness of 50 μm. .. These adhesives 9 are composed of a thermoplastic adhesive having a glass transition temperature of 230 ° C., for example, polyimide, polyether amide or polyether amide imide, and have a glass transition temperature of 2 × 1 or less.
The elastic modulus of 0 10 dyne / cm 2 is maintained.

【００１５】なお、接着剤９の厚さは１０〜３０μｍの
範囲で任意に設定でき、また、そのガラス転移温度は１
７０℃〜２７０℃の範囲に、望ましくは、後の工程のチ
ップボンディング、ワイヤボンディングおよび樹脂モー
ルドで温度が１８０℃〜２２０℃程度まで上昇すること
を鑑みると２２０℃〜２４０℃の範囲に設定される。The thickness of the adhesive 9 can be arbitrarily set within the range of 10 to 30 μm, and its glass transition temperature is 1
It is set in the range of 70 ° C to 270 ° C, preferably in the range of 220 ° C to 240 ° C in view of the fact that the temperature rises up to about 180 ° C to 220 ° C in the later steps of chip bonding, wire bonding and resin molding. It

【００１６】この実施例にあっては、次のようにして半
導体チップ５が実装される。先ず、予めリードフレーム
３のインナリード１にフィルム部材７を一面の接着剤９
により貼着する。この貼着は、３００〜４００℃の温
度、５〜３０ｋｇｆの張り付け力で行う。ここで、フィ
ルム部材７が貼着されたリードフレーム３はインナリー
ド１の変形等がフィルム部材７によって防止される。In this embodiment, the semiconductor chip 5 is mounted as follows. First, the film member 7 is previously attached to the inner lead 1 of the lead frame 3 by the adhesive 9 on one surface.
Attach by. This attachment is performed at a temperature of 300 to 400 ° C. and a sticking force of 5 to 30 kgf. Here, in the lead frame 3 to which the film member 7 is attached, the deformation of the inner lead 1 and the like are prevented by the film member 7.

【００１７】次に、ヒートスプレッダ２をフィルム部材
７の他面の接着剤９により貼着する。この貼着も、上述
した温度、張り付け力で２〜１０秒程度保持して行う。
ここで、接着剤９は熱可塑性接着剤からなるため、上述
したリードフレーム３への貼着と条件を異ならせる必要
がなく、また、後のヒートスプレッダ２の貼着時に特別
の処理も必要としない。さらに、接着不良を生じた場合
も再加熱を行うことができ、後のキュアも必要としない
ため、貼着が容易であり、工数の削減もでき、時間の短
縮も図れる。またさらに、貼着時において熱可塑性接着
剤９は化学反応を伴わないため、リード間電流リークお
よび腐食等の原因となるガス等の不純物を生成せず、高
い信頼性を期待できる。Next, the heat spreader 2 is attached by the adhesive 9 on the other surface of the film member 7. This sticking is also performed while holding the temperature and the sticking force for about 2 to 10 seconds.
Here, since the adhesive 9 is made of a thermoplastic adhesive, it is not necessary to make the conditions different from the above-mentioned attachment to the lead frame 3, and no special treatment is required when attaching the heat spreader 2 later. .. Furthermore, even if adhesion failure occurs, reheating can be performed and subsequent curing is not required, so that the attachment is easy, the number of steps can be reduced, and the time can be shortened. Furthermore, since the thermoplastic adhesive 9 does not undergo a chemical reaction during sticking, impurities such as gas causing leakage of current between leads and corrosion are not generated, and high reliability can be expected.

【００１８】この後は、半導体チップ５をペースト４に
よりヒートスプレッダ２に搭載するチップボンディン
グ、超音波によりボンディングワイヤ１０を接続するワ
イヤボンディング、封止樹脂１１で半導体チップ５を封
止するモールド等の工程を行い、これら工程において温
度が１８０℃〜２２０℃程度に上昇する。しかしなが
ら、接着剤９のガラス転移温度は２３０℃であるため、
接着剤９の接着力が低下することがなく、剥離等の不都
合の発生を防止できる。また、この接着剤９はガラス転
移温度以下の温度において高い弾性率（２×１０10ｄｙ
ｎｅ／ｃｍ2 ）を維持するため、超音波によるワイヤボ
ンディング時において超音波エネルギを消費しない。Thereafter, steps such as chip bonding for mounting the semiconductor chip 5 on the heat spreader 2 with the paste 4, wire bonding for connecting the bonding wire 10 by ultrasonic waves, and molding for sealing the semiconductor chip 5 with the sealing resin 11 are performed. And the temperature rises to about 180 ° C to 220 ° C in these steps. However, since the glass transition temperature of the adhesive 9 is 230 ° C.,
The adhesive strength of the adhesive 9 does not decrease, and the occurrence of inconvenience such as peeling can be prevented. Further, this adhesive 9 has a high elastic modulus (2 × 10 10 dy at a temperature below the glass transition temperature).
Ne / cm 2 ) is maintained so that ultrasonic energy is not consumed during ultrasonic wire bonding.

【００１９】図３には、この発明の他の実施例にかかる
半導体装置用リードフレームを示す。なお、以下に述べ
る実施例では、上述した実施例と同一の部分についての
説明を省略する。この実施例は、フィルム部材７（図
中、ハッチングを付して表す）を内縁がインナリード１
の先端よりも０．１ｍｍ程度内側に、外縁がヒートスプ
レッダ２の外縁よりも０．１ｍｍ程度演出する形状に成
形した。この実施例にあっては、インナリード１とヒー
トスプレッダ２とをフィルム部材７により確実に絶縁で
き、電流リーク等の不良の発生を防止できる。FIG. 3 shows a lead frame for a semiconductor device according to another embodiment of the present invention. In the embodiments described below, the description of the same parts as those in the above-described embodiments will be omitted. In this embodiment, the inner edge of the film member 7 (represented by hatching in the drawing) is the inner lead 1.
The outer edge of the heat spreader 2 was molded inward by about 0.1 mm from the tip of the heat spreader 2 so as to produce about 0.1 mm from the outer edge of the heat spreader 2. In this embodiment, the inner lead 1 and the heat spreader 2 can be reliably insulated by the film member 7, and the occurrence of defects such as current leakage can be prevented.

【００２０】図４には、この発明のまた他の実施例にか
かる半導体装置用リードフレームを示す。この実施例
は、インナリード１の先端部とヒートスプレッダ２の内
側部分との間に第１のフィルム部材７ａを、インナリー
ド１の中間部分とヒートスプレッダ２の外側部分との間
に第２のフィルム部材７ｂを設ける。これらフィルム部
材７ａ，７ｂもフィルム基材８の表裏両面にガラス転移
温度が２３０℃の熱可塑性接着剤９を設けて構成され、
これら接着剤９によりヒートスプレッダ２とインナリー
ド１とが固着される。この実施例では、全体としてのフ
ィルム部材７を少なくできるため、耐リフロークラック
性に一段と優れる。そして、ボンディングワイヤ１０が
接続するインナリード１の先端部にはヒートスプレッダ
２との間にフィルム部材７ａが介設されるためワイヤボ
ンディングを支障無く行え、また、インナリード１とヒ
ートスプレッダ２とは両フィルム部材７ａ，７ｂにより
確実に絶縁できる。FIG. 4 shows a lead frame for a semiconductor device according to still another embodiment of the present invention. In this embodiment, a first film member 7a is provided between the tip portion of the inner lead 1 and the inner portion of the heat spreader 2, and a second film member 7a is provided between the middle portion of the inner lead 1 and the outer portion of the heat spreader 2. 7b is provided. These film members 7a and 7b are also configured by providing a thermoplastic adhesive 9 having a glass transition temperature of 230 ° C. on both front and back surfaces of the film base material 8,
The heat spreader 2 and the inner lead 1 are fixed by the adhesive 9. In this embodiment, since the film member 7 as a whole can be reduced, the reflow crack resistance is further excellent. Further, since the film member 7a is provided between the heat spreader 2 and the tip of the inner lead 1 to which the bonding wire 10 is connected, the wire bonding can be performed without any trouble. The members 7a and 7b ensure reliable insulation.

【００２１】[0021]

【発明の効果】以上説明したように、この発明によれ
ば、ヒートスプレッダとリードフレームとの接着をガラ
ス転移温度が１７０℃〜２７０℃の熱可塑性接着剤によ
り行うため、半導体装置全体としての厚さを小さくで
き、半導体チップの実装も容易かつ短時間で行え、ま
た、接着により腐食等の原因となるガス等が発生せず高
い信頼性を達成でき、さらに、後のボンディングおよび
モールド等の工程で温度が上昇しても高い接着力を得ら
れ、またさらに、超音波でワイヤボンディングを行って
も超音波エネルギを浪費せず高い効率を達成できる。As described above, according to the present invention, the heat spreader and the lead frame are adhered by the thermoplastic adhesive having the glass transition temperature of 170 ° C to 270 ° C. The semiconductor chip can be mounted easily and in a short time, and high reliability can be achieved without the generation of gas that causes corrosion etc. due to adhesion. Furthermore, in the subsequent bonding and molding processes. Even if the temperature rises, a high adhesive force can be obtained, and even if wire bonding is performed by ultrasonic waves, high efficiency can be achieved without wasting ultrasonic energy.

【図面の簡単な説明】[Brief description of drawings]

【図１】 この発明の一実施例にかかる半導体装置用リ
ードフレームを４分割した４分の１の部分の平面図であ
る。FIG. 1 is a plan view of a quarter of a lead frame for a semiconductor device according to an embodiment of the present invention which is divided into four parts.

【図２】 この発明の一実施例で使用されるフィルム部
材の断面図である。FIG. 2 is a sectional view of a film member used in an embodiment of the present invention.

【図３】 この発明の他の実施例にかかる半導体装置用
リードフレームの４分の１の部分の平面図である。FIG. 3 is a plan view of a quarter portion of a semiconductor device lead frame according to another embodiment of the present invention.

【図４】 この発明のまた他の実施例にかかる半導体装
置用リードフレームの４分の１の部分の平面図である。FIG. 4 is a plan view of a quarter portion of a semiconductor device lead frame according to still another embodiment of the present invention.

【図５】 従来の半導体装置用リードフレームの断面図
である。FIG. 5 is a cross-sectional view of a conventional semiconductor device lead frame.

【図６】 従来の他の態様の半導体装置用リードフレー
ムの断面図である。FIG. 6 is a cross-sectional view of another conventional lead frame for a semiconductor device.

【図７】 従来の半導体装置用リードフレームにおける
細部構造の１態様を示す断面図である。FIG. 7 is a cross-sectional view showing one aspect of a detailed structure of a conventional lead frame for a semiconductor device.

【図８】 従来の半導体装置における細部構造の他の態
様を示す断面図である。FIG. 8 is a cross-sectional view showing another aspect of the detailed structure of the conventional semiconductor device.

【符号の説明】[Explanation of symbols]

１ インナリード ２ ヒートスプレッダ ３ リードフレーム ５ 半導体チップ ７，７ａ，７ｂ フィルム部材 ８ フィルム基材 ９ 接着剤 １１ モールド樹脂 1 Inner Lead 2 Heat Spreader 3 Lead Frame 5 Semiconductor Chips 7, 7a, 7b Film Member 8 Film Base Material 9 Adhesive 11 Mold Resin

───────────────────────────────────────────────────── フロントページの続き (72)発明者 亀 山 康 晴 茨城県土浦市木田余町3550番地 日立電線 株式会社システムマテリアル研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yasuharu Kameyama 3550, Kidayo-cho, Tsuchiura-shi, Ibaraki Hitachi Cable Co., Ltd.

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】信号層に放熱用のヒートスプレッダを設け
た半導体装置用リードフレームにおいて、両面にガラス
転移温度が１７０℃〜２７０℃の熱可塑性接着剤を有す
るフィルム部材を前記信号層と前記ヒートスプレッダと
の間に介設し、このフィルム部材の両面の接着剤で前記
信号層と前記ヒートスプレッダとを接着したことを特徴
とする半導体装置用リードフレーム。1. A lead frame for a semiconductor device in which a heat spreader for heat dissipation is provided on a signal layer, and a film member having a thermoplastic adhesive having a glass transition temperature of 170 ° C. to 270 ° C. on both surfaces is used as the signal layer and the heat spreader. A lead frame for a semiconductor device, wherein the signal layer and the heat spreader are bonded to each other with an adhesive on both sides of the film member. 【請求項２】請求項１に記載の半導体装置用リードフレ
ームであって、前記熱可塑性接着剤がポリイミド、ポリ
エーテルアミドあるいはポリエーテルアミドイミドであ
ることを特徴とする半導体装置用リードフレーム。2. The lead frame for a semiconductor device according to claim 1, wherein the thermoplastic adhesive is polyimide, polyether amide or polyether amide imide.
JP4132528A 1992-05-25 1992-05-25 Semiconductor device lead frame Pending JPH05326795A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4132528A JPH05326795A (en) 1992-05-25 1992-05-25 Semiconductor device lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4132528A JPH05326795A (en) 1992-05-25 1992-05-25 Semiconductor device lead frame

Publications (1)

Publication Number Publication Date
JPH05326795A true JPH05326795A (en) 1993-12-10

Family

ID=15083401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4132528A Pending JPH05326795A (en) 1992-05-25 1992-05-25 Semiconductor device lead frame

Country Status (1)

Country Link
JP (1) JPH05326795A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08204111A (en) * 1995-01-26 1996-08-09 Nec Corp Lead frame and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08204111A (en) * 1995-01-26 1996-08-09 Nec Corp Lead frame and manufacture thereof

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