JPH05320886A - Ion plating device - Google Patents

Abstract

PURPOSE:To obtain a vapor deposited film having a high density and good adhesion by facilitating an evaporation operation, increasing an evaporation rate, enabling the exact control of an evaporation rate, enabling the generation of high-energy ions and accelerating a reaction. CONSTITUTION:This ion plating device is constituted by providing the device with an ion source which generates the ions of high energy to cause wire explosion evaporation by feeding a wire electrode 5 of a material to be deposited by evaporation at a prescribed length into a vacuum treatment vessel 1 and supplying an impact electric power from an impact power source 9 to the electrode, a gas supply device which supplies the reactive gas to induce a chemical reaction with the generated ions at a constant rate via a flow rate controller 4 from a gas cylinder 3 and a high-frequency or DC power source 12 which accelerates the chemical reaction by executing an electric discharge and applies the bias to accelerate the reactant matter toward a substrate 11.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion plating device.

[0002]

2. Description of the Related Art In conventional ion plating, a vapor deposition material is heated and evaporated, a negative high potential is applied to the substrate to cause a glow discharge, and the vaporized material is ionized in the previous period, and the vapor deposition is performed on the substrate by an electric field. It is composed of. The evaporation source is mainly based on resistance heating, but in this method, the evaporation rate is slow, so that evaporation of refractory metals, alloys and active metals is difficult. As an improvement, an evaporation source by electron beam heating is used. However, in order to bombard the vapor deposition material with this electron beam to vaporize it, an electron gun and a beam deflection system are required, and it is necessary to create a high-vacuum atmosphere. Moreover, the amount of evaporation due to this is not so large.

[0003]

According to the present invention, the evaporation operation is easy, the evaporation rate is increased, and the evaporation amount can be accurately controlled.
Moreover, it is an object of the present invention to provide an apparatus capable of generating high-energy ions and accelerating the reaction, thereby obtaining a vapor-deposited film having high density and good adhesion.

[0004]

Means for Solving the Problems An ion source that explosively vaporizes by supplying impact power to a wire electrode of a vapor deposition material that has been fed into a vapor phase for a predetermined length, and a reaction gas that causes a chemical reaction with the generated ions. A gas supply device that controls the flow rate and supplies a predetermined amount, and promotes the chemical reaction of the first period by electric discharge,
It is characterized in that it is provided with a high frequency or direct current power source for applying a bias for accelerating the reactant toward the substrate.

[0005]

According to the present invention, as described above, the wire electrode of the vapor deposition material fed into the vapor phase for a predetermined length is provided with the ion source for supplying the impact power to explode and vaporize the vapor deposition material. It has a high speed and can be accurately controlled, and a large amount of evaporated ions can be accurately generated and generated. or,
The reaction gas is quantitatively controlled and supplied to the generated ions, and a high-frequency or DC power source is provided to apply a bias to accelerate the chemical reaction by discharge and accelerate the reactant toward the substrate. The process can be accurately determined and ion plating can be performed, and a uniform vapor deposition film with high adhesion can be obtained.

[0006]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to an embodiment of the drawings. In FIG. 1, reference numeral 1 denotes an exhaust processing container, which is evacuated by a pump 2 and a reaction gas is supplied through a supply port 1b. Reference numeral 3 is a reaction gas cylinder of N ₂ or the like, which is quantitatively supplied through the flow rate control device 4. As a result, the processing container 1
The inside is maintained at the required atmospheric pressure of the reaction gas. 5 is a wire electrode of vapor deposition material, which is supplied from a winding reel,
Is fed into the container 1 and is made to face the fixed electrode 7 closely. Reference numeral 8 is an intermediate electrode that is energized in the middle of the supply wire 5,
An impact power source 9 is connected between the electrodes 8 and 7. The shock power source charges the capacitor 92 by the output of the rectifier 91 and triggers the thyristor 93 to discharge. Reference numeral 94 is a control circuit that supplies a trigger signal to the thyristor 93 by the charging voltage of the capacitor 92, and 95 is a high-speed switching transistor inserted in the charging circuit of the capacitor 92, and the control circuit 94 performs switching control of the charging circuit. A substrate holder 10 is provided at a position separated from the ion source, and a substrate 11 to be vapor-deposited is formed on the substrate holder.
To fix. A high-frequency power source 12 applies a high-frequency electric field to the substrate holder 10 and is connected between the holder 10 and the ground. 13 is a cylindrical shield provided around the substrate 11,
Bias power supply 14 is connected. Reference numeral 15 is a shield plate provided on the ion source side of the wire electrode 5, to which a bias power source 16 is connected.

In the above, when the wire explosion of the wire electrode 5 turns on the switch 93, the voltage of the capacitor 92 is applied to the electrodes 7 and 8.
With the voltage applied between them, the wire electrode 5 is sent by the driving roller 6 to bring the tip of the electrode 5 close to the fixed electrode 7 to cause a switching action to cause discharge, or the tip of the wire electrode 5 is brought into contact with the fixed electrode 7. In this state, the switch 93 may be triggered to discharge to discharge the capacitor 92,
Due to the shock discharge of the capacitor 92, a shock current flows into the wire electrode 5 having a predetermined length between the electrodes 7 and 8, and the wire melts and explodes to generate fine metal vapor and ions. The control of the amount and energy of the metal ions due to the line explosion can be easily and accurately controlled by determining the length of the wire 5 between the electrodes 7 and 8 and the impact power applied thereto by setting the charging voltage of the capacitor 92. ..

On the other hand, a reaction gas is supplied from the cylinder 3 into the processing container 1. A device 4 for controlling the flow rate by rotation control by a motor is provided in the gas supply path, and a fixed amount of gas is supplied. A chemical reaction is performed between the fixed amount supply gas and the fixed amount vapor ions generated by the ion source. For example,
When generating Tin, a Ti material is used for the wire electrode 5, and N ₂ is used as a gas supplied from the cylinder 3. In this chemical reaction, the generated Ti vapor and ions and the supplied N ₂ gas are sufficiently ionized in the discharge plasma by the high frequency power source 12 to be ionized, and reacted in a state where the energy level is increased,
The reaction can be accelerated. At the same time as this reaction, the reactant is kept at a negative potential with respect to the shield plate 15
It is possible to form a Tin film on the substrate 11 by accelerating and vapor deposition.

The bias generated by the high frequency power source 12 is insulated by the capacitor shown in FIG.
Can be negatively self-biased to a value approximately equal to the high frequency voltage. By applying this bias, the substrate 11 is 100 mm to 500 m from the ion source.
Even if m is also separated, the energy of the generated ions can be accelerated and plated without reducing the energy.

For example, in an atmosphere of 0.1 Pa, 0.
When the ions are generated by the line explosion discharge of 8kJouule, the energy at the distance of 100mm is about 30e.
V is 0 eV at 800 mm. Therefore, when a high frequency power supply of 13.65 MHz and 500 W was provided, the energy was about 25 eV at a distance of 800 mm.

A DC power source can be used as the bias power source, and plasma can be generated by glow discharge by the DC power source. Further, a magnetic field can be applied to generate plasma resonance. In any case, the ion plating having good adhesion can be performed by setting the ion energy of 15 to 25 eV or more at the position of the substrate.

Next, the formation of a tin film coating will be described. At a position 400 mm from the substrate in a 0.02 Pa atmosphere of N ₂ gas, a thickness of 0.5 mmφ and a length of 100 mm.
mm Ti material wire 2000V, 560μs, 5kJ
When the line energy is supplied to cause the line explosion, about 50 to 100 is applied to the biased substrate of the high frequency power source.
Ion plating could be performed with an energy of eV. Therefore, according to this, it was possible to form a coating film having high reactivity and excellent adhesion.

[0013]

As described above, the present invention is provided with an ion source for supplying a shocking electric power to a wire electrode of a vapor deposition material which has been sent into a gas phase for a predetermined length to explode and vaporize it.
The evaporation rate of the deposit is fast, and energy control can be accurately performed, and therefore, a large amount of evaporated ions can be generated by accurately determining the amount thereof. Further, the generated ions have extremely high energy and can be easily generated, and a good reaction can be easily performed by supplying a reactive gas to the generated ions to cause a chemical reaction. In addition, by accelerating the chemical reaction by electric discharge and providing a high frequency or DC power source that applies a bias to accelerate the reactant toward the substrate, the chemical reaction accurately determines the mean free path of the compound, and high energy can be obtained. By holding it, good vapor deposition can be performed, and a uniform vapor deposition film having high adhesion can be obtained.

[Brief description of drawings]

FIG. 1 is a configuration diagram of an embodiment of the present invention.

[Explanation of symbols]

 1 Processing Container 2 Exhaust Pump 3 Reactive Gas Cylinder 4 Flow Control Device 5 Wire Electrode 6 Drive Roller 7, 8 Electrode 9 Impact Power Supply 10 Substrate Holder 11 Substrate 12 High Frequency Power Supply 13, 15 Shield

Claims (1)

[Claims] 1. In an ion plating apparatus for depositing ions generated in a gas phase on a substrate, explosive vaporization is performed by supplying impact power to a wire electrode of a vapor deposition material that has been fed for a predetermined length in the gas phase in the previous period. An ion source, a gas supply device for supplying a predetermined amount of a reaction gas that causes a chemical reaction with the generated ions, and a bias for accelerating the chemical reaction by discharging and accelerating the reactant toward the substrate. An ion plating device, characterized in that it is provided with a high frequency or DC power supply for applying.