JPS6124462B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a vapor deposition apparatus that evaporates or vaporizes a metal or non-metallic substance and deposits it on an object to be processed or a mold.

Conventional vapor deposition equipment heats and evaporates the vapor deposition material in an evacuated container, and uses the vapor pressure to deposit it on the surface of the object to be processed. However, it is not easy to increase the vapor pressure, and the generated vapor is Since it could not be efficiently adhered to the object to be treated, it was not possible to greatly improve the amount of vapor deposition per unit time.

The present invention was proposed in order to increase the deposition rate through efficient vapor deposition. It is characterized by generating a magnetic field and applying a magnetic field to the object in the direction of the object to perform collision welding.

The present invention will be explained below with reference to an embodiment of the drawings.
In Fig. 1, 1 is a processing container, and an exhaust pump 2
The inside can be evacuated to approximately 10 ^-3 to ^{10 -5} Torr, and the pressure can be increased to atmospheric pressure or above atmospheric pressure by supplying gas (inert gas, air, etc.) from pump 3. It can be an atmosphere. 4 is a perforated electrode inserted into the container, 5 is a counter electrode,
Both electrodes are insulated and fixed to the container wall and face each other with a required spacing. Reference numeral 6 denotes a fusible wire made of vapor deposition material, which is fed through the perforated electrode 4 until its tip comes close to or comes into contact with the counter electrode 5, and is caused to explode due to an impact current. 7 is the object or mold to be vapor-deposited, and the wire 6 between the electrodes is
It is fixed to the inner wall surface of the container 1 so as to face it. Reference numeral 8 denotes an impact capacitor in which required energy is stored by a high-voltage power supply 10, and discharged to the wire 6 between the electrodes 4 and 5 when discharge is started by a switch 9. 11
is a magnetic field generating coil placed on the opposite side of the object to be processed 7 with the wire 6 in between, connected in parallel with the electrodes 4 and 5, excited by the impact current from the capacitor 8, and synchronized with the fusing discharge of the wire 6. It is provided so that it is excited by the magnetic field and generates a magnetic field. Ta 12 is a capacitor for phase control, and by this phase difference control, the excitation of the coil 11 is delayed from the discharge of the wire 6, and the phase difference control is performed so that a magnetic field is generated just when metal vapor is generated by the wire discharge. will be carried out.

In the above apparatus, when performing vapor deposition, the inside of the container 1 is first evacuated by the vacuum pump 5, and either the chamber 1 is kept in a predetermined vacuum state, or after the vacuum is evacuated, a gas such as argon, nitrogen, carbon dioxide, air, etc. is supplied from the pump 3. to create a predetermined gas atmosphere, or to create a pressurized atmosphere by evacuation or by supplying pressurized gas from the pump 3 without evacuation. The wire 6 is inserted through the hole in the electrode 4 so that its tip is close to or in contact with the counter electrode 5, and the capacitor 8 charged therein is discharged by the conduction of the switch 9. The discharge shock current flows through the wire 6 between the electrodes 4 and 5, and the wire 6 fuses and explodes due to the impact, generating plasma and a large amount of metal vapor. The metal vapor scatters around the wire 6, but at this time, the coil 11 is excited by the phase control of the capacitor 12 to form a magnetic field, which acts on the metal vapor generated by the explosion of the wire 6, The steam that is about to scatter around is moved in the direction of the object to be processed 7. Due to the action of this magnetic field, the metal vapor moves toward the object 7 to be processed, accelerates the movement, and moves the vapor toward the object 7 to be processed.
to be blown away.

The type of gas in the atmosphere, the atmospheric pressure, etc. vary depending on the purpose of vapor deposition, and any metal can be vapor-deposited, and compounds with the atmospheric gas can be vapor-deposited. Conventionally, only vacuum deposition was possible in the processing atmosphere, but a major feature of this method is that vapor deposition can be performed in any atmosphere because the vapor generation means is different. Since metal vapor is generated by the impact discharge explosion of the vapor deposition material wire as described above, a large amount of vapor can be generated instantaneously, and it is necessary to supply the wire 6 between the electrodes 4 and 5 and charge/discharge the capacitor 8. Through repetitive control, a large amount of steam can be repeatedly generated, and the deposition rate can be dramatically improved compared to conventional heating deposition. Then, a magnetic field is applied to the generated plasma and metal vapor toward the object 7 to be processed, preventing the generated plasma from scattering and efficiently moving it toward the object 7 to be processed, causing it to accelerate and collide with the object 7 for welding, resulting in the vapor deposition process. can be effectively achieved, increasing the deposition rate and providing highly efficient deposition processing effects.

Note that the discharge explosion of the wire in FIG. 1 may be controlled by closing the switch 9 in advance and feeding the wire 6 so that the tip of the wire 6 is fed close to the counter electrode 5 and discharge occurs.

Fig. 2 shows another embodiment of metal plasma and steam generation, in which perforated electrodes 13 and 14 are provided facing each other, and wires (wires, bands, etc.) 15 and 16 of vapor deposition material are fed to these, and the tips of the wires are The device is designed to generate electric discharge, and with this, high-speed vapor deposition processing similar to that described above can be performed. The discharge between the wires 15 and 16 can be controlled as desired by controlling the discharge atmosphere pressure. Further, the interelectrode discharge is not limited to wires, but any rod-shaped, plate-shaped, or block-shaped electrode can be used.

In Figure 3, the raw material is powder or particles of vapor deposition material, 17 is the powder and granules, and foil or plate 18
The counter electrode 19 is placed close to the electrode 19 to cause a discharge explosion. Due to the impact discharge from the capacitor, the granular material 17 is exploded and scattered, divided into fine particles, and a large amount of plasma and metal vapor can be generated. When using this method, powder 17
It is easy to mix and deposit different metals and non-metals.

Although the above description has been made based on one embodiment, the atmosphere for the vapor deposition process can be an atmosphere of any gas at any pressure, and can be arbitrarily selected and controlled depending on the material and purpose. The magnetic field forming device has a phase difference in the discharge for generating metal vapor, and when a desired metal vapor group is formed by the discharge, it generates an impact magnetic field to act on the metal vapor group and accelerate it toward the object to be processed. Since the metal vapors are collided, the magnetic field does not affect the discharge during metal vapor generation and has no adverse effect, and a large amount of fine metal vapor can be stably generated. Further, it is effective to control the strength of the magnetic field so that the metal vapor generated by the discharge is well deposited on the object to be processed, and to control the movement and speed of the generated vapor to perform the vapor deposition process.

As described above, the present invention generates vapor of the deposition material by interelectrode discharge, discharge explosion of powder and granular material, discharge explosion of wire, etc., so a large amount of vapor can be obtained instantaneously, and it can be repeatedly produced by repeating the discharge. A large amount of steam can be generated, and the generated steam acts to form a magnetic field toward the object to be processed, which increases the effect of vapor adhesion and adhesion, increasing the steam speed and performing highly efficient vapor deposition processing. I can do it. Further, the processing atmosphere can be arbitrarily controlled, and the vapor deposition process can be carried out in the best atmosphere depending on the purpose of vapor deposition, making multi-purpose vapor deposition possible.

[Brief explanation of the drawing]

FIG. 1 is a block diagram of one embodiment of the present invention, FIG. 2 is a partial block diagram of another embodiment, and FIG. 3 is also a partial block diagram of another embodiment. 1 is a processing container, 2 is a vacuum pump, 3 is a gas supply pump, 4 and 5 are electrodes, 6 is a wire, 7 is an object to be processed, 8 is an impact capacitor, 11 is a magnetic field forming coil, and 12 is a phase control capacitor. .

Claims (1)

[Claims] 1. A processing container that forms the required atmosphere, a vapor deposition material such as a discharge electrode, discharge powder, or discharge wire that is fed into the processing container, and a large amount of vapor generated by applying an impact discharge to the vapor deposition material. a magnetic field forming device that acts on the generated vapor of the vapor deposition material to form a magnetic field directed toward the object to be processed or the mold; 1. A vapor deposition apparatus comprising: a circuit through which an excitation current is passed with a predetermined phase difference.