JPH0531295B2 - - Google Patents

Info

Publication number
JPH0531295B2
JPH0531295B2 JP58147356A JP14735683A JPH0531295B2 JP H0531295 B2 JPH0531295 B2 JP H0531295B2 JP 58147356 A JP58147356 A JP 58147356A JP 14735683 A JP14735683 A JP 14735683A JP H0531295 B2 JPH0531295 B2 JP H0531295B2
Authority
JP
Japan
Prior art keywords
film
gate electrode
gaas
manufacturing
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58147356A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6039870A (ja
Inventor
Naotaka Uchitomi
Nobuyuki Toyoda
Akimichi Hojo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58147356A priority Critical patent/JPS6039870A/ja
Publication of JPS6039870A publication Critical patent/JPS6039870A/ja
Publication of JPH0531295B2 publication Critical patent/JPH0531295B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58147356A 1983-08-12 1983-08-12 ＧａＡｓ半導体装置の製造方法 Granted JPS6039870A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58147356A JPS6039870A (ja) 1983-08-12 1983-08-12 ＧａＡｓ半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58147356A JPS6039870A (ja) 1983-08-12 1983-08-12 ＧａＡｓ半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6039870A JPS6039870A (ja) 1985-03-01
JPH0531295B2 true JPH0531295B2 (enExample) 1993-05-12

Family

ID=15428339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58147356A Granted JPS6039870A (ja) 1983-08-12 1983-08-12 ＧａＡｓ半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6039870A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014118874B4 (de) * 2014-12-17 2025-09-18 Infineon Technologies Austria Ag Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung

Also Published As

Publication number Publication date
JPS6039870A (ja) 1985-03-01

Similar Documents

Publication Publication Date Title
US5162262A (en) Multi-layered interconnection structure for a semiconductor device and manufactured method thereof
US4892844A (en) Making a low resistance three layered contact for silicon devices
US4503599A (en) Method of fabricating field effect transistors
KR910005400B1 (ko) 다층레지스트를 이용한 자기정합형 갈륨비소 전계효과트랜지스터의 제조방법
US6023086A (en) Semiconductor transistor with stabilizing gate electrode
JPH0260217B2 (enExample)
US4997779A (en) Method of making asymmetrical gate field effect transistor
KR930011800B1 (ko) Mos형 반도체장치
US4586063A (en) Schottky barrier gate FET including tungsten-aluminum alloy
US5631479A (en) Semiconductor device with laminated refractory metal schottky barrier gate electrode
US5030589A (en) Production method for a semiconductor device
US4712291A (en) Process of fabricating TiW/Si self-aligned gate for GaAs MESFETs
JPH0531295B2 (enExample)
JPH0359580B2 (enExample)
Allan Stability of Schottky barriers at high temperatures for use in GaAs MESFET technology
US5179434A (en) Semiconductor device and manufacturing method thereof
JPH04282841A (ja) 半導体装置の製造方法
JP2777153B2 (ja) 半導体装置およびその製造方法
JPH022639A (ja) 電界効果トランジスタの製造方法
JPH05235288A (ja) ＢｉＭＯＳ半導体装置の製造方法
JPS62274673A (ja) 半導体装置の製造方法
JPH0472385B2 (enExample)
KR940010561B1 (ko) Mesfet 반도체 장치 제조방법
JPH0257340B2 (enExample)
JP2604024B2 (ja) 半導体装置の製造方法