JPH05306455A - Film forming device - Google Patents

Film forming device

Info

Publication number
JPH05306455A
JPH05306455A JP11093092A JP11093092A JPH05306455A JP H05306455 A JPH05306455 A JP H05306455A JP 11093092 A JP11093092 A JP 11093092A JP 11093092 A JP11093092 A JP 11093092A JP H05306455 A JPH05306455 A JP H05306455A
Authority
JP
Japan
Prior art keywords
oxygen
film forming
substrate
chamber
forming chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11093092A
Other languages
Japanese (ja)
Inventor
Naoji Moriya
直司 森谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP11093092A priority Critical patent/JPH05306455A/en
Publication of JPH05306455A publication Critical patent/JPH05306455A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To form good-quality oxide film of a vapor deposited material on the surface to be subjected to vapor deposition of a substrate by irradiating the oxygen supplied into a vacuum chamber with UV rays by an oxygen supplying means, thereby enhancing the reactivity of the oxygen. CONSTITUTION:A vacuum state of about 10<-5> to 10<-7>Torr is maintained in a film forming chamber 10 and a holder 3 fixed with a substrate 7 is arranged in the prescribed position of a dome 8. The oxygen is then supplied from the oxygen supplying device 4 into the film forming chamber 10 to maintain the prescribed oxygen partial pressure. A mercury lamp 5 is then lighted to irradiate the oxygen molecules in the film forming chamber 10, by which the oxygen is partly converted to ozone and the other parts are excited to form the oxygen molecules having the high reactivity. A crucible 2a is heated in this state to heat and evaporate the oxide 6 to be deposited by evaporation, by which the powerful oxidizing effect of the excited oxygen molecules is imparted and the oxide film is formed on the surface of the substrate 7. As a result, good- quality oxide film is formed on the surface of the substrate 7.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、成膜装置、特に、蒸着
により基板等に酸化膜を作成する成膜装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming apparatus, and more particularly to a film forming apparatus for forming an oxide film on a substrate or the like by vapor deposition.

【0002】[0002]

【従来の技術】たとえば、光学薄膜作成の場合、蒸着法
による成膜が広く行われている。蒸着法により基板に酸
化膜を作成する場合、基板と蒸発源とが対向して配置さ
れた真空チャンバ内を減圧した後、チャンバ内に酸素を
供給して酸化雰囲気を形成する。このとき、チャンバ内
の酸化力を高めるために、たとえば、チャンバ内の酸素
分圧を高める方法、あるいは高い酸素分圧下にあるチャ
ンバ内に高電圧を印加し、酸素とクラスター(蒸発物の
細片)をイオン化して酸化を促進する方法等が用いられ
ている。
2. Description of the Related Art For example, in the case of forming an optical thin film, film formation by a vapor deposition method is widely performed. When forming an oxide film on a substrate by a vapor deposition method, after depressurizing the inside of a vacuum chamber in which the substrate and the evaporation source are opposed to each other, oxygen is supplied into the chamber to form an oxidizing atmosphere. At this time, in order to increase the oxidizing power in the chamber, for example, a method of increasing the oxygen partial pressure in the chamber, or applying a high voltage to the chamber under high oxygen partial pressure, oxygen and clusters ) Is used to accelerate the oxidation.

【0003】[0003]

【発明が解決しようとする課題】上述した従来の成膜装
置において、前者の方法では、酸化力が不充分であり、
また酸素の供給が真空度の低下に繋がるため蒸着力は比
較的弱い。また、後者の方法では、被蒸着物がたとえば
非導電性基板である場合、基板のチャージアップにより
クラスターが基板上から弾き返されてしまう。そこで、
蒸発源と基板との間の酸素イオンを中性化して基板の被
蒸着面に照射する方法も用いられている。しかし、装置
が複雑になる。
In the conventional film forming apparatus described above, the former method has insufficient oxidizing power,
Further, the supply of oxygen leads to a reduction in the degree of vacuum, so the vapor deposition power is relatively weak. Further, in the latter method, when the substance to be vapor-deposited is, for example, a non-conductive substrate, the clusters are repelled from the substrate by the charge-up of the substrate. Therefore,
A method of neutralizing oxygen ions between the evaporation source and the substrate and irradiating the vapor deposition surface of the substrate is also used. However, the device becomes complicated.

【0004】本発明の目的は、希薄な酸素雰囲気下にお
いても、被蒸着面に良質の酸化膜を作成できる成膜装置
を提供することにある。
An object of the present invention is to provide a film forming apparatus capable of forming a good quality oxide film on a surface to be vapor-deposited even in a dilute oxygen atmosphere.

【0005】[0005]

【課題を解決するための手段】本発明に係る成膜装置
は、真空チャンバと、真空チャンバに配置された蒸発源
と、蒸発源に対向する側に配置された基板と、真空チャ
ンバ内に酸素を供給するための酸素供給手段と、酸素供
給手段により供給される酸素に紫外線を照射するための
紫外線照射手段とを備えている。
A film forming apparatus according to the present invention comprises a vacuum chamber, an evaporation source arranged in the vacuum chamber, a substrate arranged on the side facing the evaporation source, and oxygen in the vacuum chamber. And oxygen irradiation means for irradiating the oxygen supplied by the oxygen supply means with ultraviolet rays.

【0006】[0006]

【作用】本発明に係る成膜装置では、蒸発源が配置され
た真空チャンバ内に基板が配置される。そして、真空チ
ャンバ内を減圧後、酸素供給手段より酸素が供給され
る。次に、供給された酸素に向けて紫外線照射手段より
紫外線が照射される。このとき、真空チャンバ内の酸素
は、その一部の反応性が高められた状態となり、分圧を
高めることなく強い酸化雰囲気を形成できる。真空チャ
ンバ内の蒸発物はこの酸化雰囲気の中で酸化が促進さ
れ、基板上に良質な酸化膜を作成することができる。
In the film forming apparatus according to the present invention, the substrate is placed in the vacuum chamber in which the evaporation source is placed. Then, after decompressing the inside of the vacuum chamber, oxygen is supplied from the oxygen supply means. Next, the supplied oxygen is irradiated with ultraviolet rays from the ultraviolet ray irradiation means. At this time, the oxygen in the vacuum chamber is in a state in which the reactivity is partly increased, and a strong oxidizing atmosphere can be formed without increasing the partial pressure. Oxidation in the vacuum chamber is accelerated in this oxidizing atmosphere, and a good quality oxide film can be formed on the substrate.

【0007】[0007]

【実施例】図1は、本発明の一実施例による成膜装置を
示している。この成膜装置は、チャンバ1と、蒸発源2
と、基板ホルダ3と、酸素供給装置4及び水銀ランプ5
とから主に構成されている。図においてチャンバ1の底
部には、蒸発源2が配置されている。
EXAMPLE FIG. 1 shows a film forming apparatus according to an example of the present invention. This film forming apparatus includes a chamber 1 and an evaporation source 2
Substrate holder 3, oxygen supply device 4 and mercury lamp 5
It is mainly composed of and. In the figure, an evaporation source 2 is arranged at the bottom of a chamber 1.

【0008】蒸発源2の上部には蒸着酸化物6を収納す
るためのるつぼ2aが形成されている。蒸発源2の内部
には、蒸着酸化物6の加熱制御を行うための図示しない
加熱制御器が配置されている。加熱制御器は、ヒータ等
を用いた抵抗加熱方式,高周波コイル等を用いた高周波
加熱方式,電子ビームを用いた方式等が用いられる。る
つぼ2aの上方には、薄膜を形成すべき基板7を固定す
るための基板ホルダ3が配置されている。
A crucible 2a for accommodating the vapor-deposited oxide 6 is formed on the evaporation source 2. Inside the evaporation source 2, a heating controller (not shown) for controlling the heating of the vapor deposition oxide 6 is arranged. As the heating controller, a resistance heating method using a heater or the like, a high frequency heating method using a high frequency coil or the like, a method using an electron beam, or the like is used. A substrate holder 3 for fixing a substrate 7 on which a thin film is to be formed is arranged above the crucible 2a.

【0009】基板ホルダ3は、曲面を有するドーム8の
下面にあって図示しない駆動装置によりドームの両端間
を移動可能に配置されている。基板ホルダ3と蒸発源2
との間にはチャンバ1に囲まれた成膜室10が形成され
ている。成膜室10の外部には、成膜室10内に酸素を
供給するための酸素供給装置4が配置されている。酸素
供給装置4は、図示しない調圧機構及び外部からの指令
に基づき酸素の供給を制御するための制御機構を有し、
配管4aにより成膜室10内に酸素を供給できるように
なっている。蒸発源2の側方には、成膜室10に向けて
紫外線を照射するための水銀ランプ5が配置されてい
る。
The substrate holder 3 is arranged on the lower surface of the dome 8 having a curved surface so as to be movable between both ends of the dome by a driving device (not shown). Substrate holder 3 and evaporation source 2
A film forming chamber 10 surrounded by the chamber 1 is formed between and. An oxygen supply device 4 for supplying oxygen into the film forming chamber 10 is arranged outside the film forming chamber 10. The oxygen supply device 4 has a pressure adjusting mechanism (not shown) and a control mechanism for controlling the supply of oxygen based on a command from the outside,
Oxygen can be supplied into the film forming chamber 10 through the pipe 4a. A mercury lamp 5 for irradiating the film formation chamber 10 with ultraviolet rays is arranged beside the evaporation source 2.

【0010】水銀ランプ5は、チャンバ1の底部に配置
され、その上方には、窓11が配置されている。窓11
は、水銀ランプ5から照射される紫外線を透過するガラ
ス体を透光面として構成され、周囲をカバー12で支持
されている。これら窓11及びカバー12により水銀ラ
ンプ5は、成膜室10と気密に封止されている。
The mercury lamp 5 is arranged at the bottom of the chamber 1, and a window 11 is arranged above it. Window 11
Is made up of a glass body, which is transparent to the ultraviolet rays emitted from the mercury lamp 5, as a light-transmitting surface, and is surrounded by a cover 12. The mercury lamp 5 is hermetically sealed from the film forming chamber 10 by the window 11 and the cover 12.

【0011】次に、動作について説明する。蒸着を行う
場合には、図示しない排気装置を運転して成膜室内の排
気を行い、成膜室10内を10-5〜10-7Torr程度
の真空状態とする。次に、図示しない駆動系により基板
7が固定された基板ホルダ3をドーム8内の所定の位置
に配置する。次に、酸素供給装置4を操作して酸素を配
管4aから成膜室10内に供給する。成膜室10内の酸
素分圧が所定の範囲に達すると、酸素供給装置4を操作
してその状態を維持する。この状態で水銀ランプ5を点
灯する。水銀ランプ5からの紫外線は、窓11のガラス
体を透過して成膜室10内の酸素分子に照射される(図
中矢印)。このとき、酸素分子はその一部がオゾンに変
わり他の部分も励起されて反応性の高い酸素分子とな
る。したがって成膜室10内には酸化力の強い酸素雰囲
気が作られる。
Next, the operation will be described. When vapor deposition is performed, an exhaust device (not shown) is operated to evacuate the inside of the film forming chamber to make the inside of the film forming chamber 10 a vacuum state of about 10 −5 to 10 −7 Torr. Next, the substrate holder 3 to which the substrate 7 is fixed by a drive system (not shown) is placed at a predetermined position in the dome 8. Next, the oxygen supply device 4 is operated to supply oxygen into the film forming chamber 10 through the pipe 4a. When the oxygen partial pressure in the film forming chamber 10 reaches a predetermined range, the oxygen supply device 4 is operated to maintain that state. In this state, the mercury lamp 5 is turned on. Ultraviolet rays from the mercury lamp 5 pass through the glass body of the window 11 to irradiate oxygen molecules in the film forming chamber 10 (arrows in the figure). At this time, a part of the oxygen molecule is changed to ozone and the other part is also excited to become a highly reactive oxygen molecule. Therefore, an oxygen atmosphere having a strong oxidizing power is created in the film forming chamber 10.

【0012】次に、図示しない加熱制御器を操作して、
るつぼ2aを加熱する。すると、るつぼ2a内に収納さ
れた、たとえば、Ti2 3 等の蒸着酸化物6が加熱蒸
発し、酸化チタン分子が蒸発源2からクラスターとなっ
て飛散し、これが基板7の被蒸着面に向かって移動を始
める(図中の二点鎖線)。成膜室10内には励起された
酸素分子が充満しているので、クラスターはこの空間を
移動する際に強力な酸化作用を受け、基板7の表面にT
iO2 からなる酸化膜が形成される。
Next, by operating a heating controller (not shown),
The crucible 2a is heated. Then, the vapor-deposited oxide 6 such as Ti 2 O 3 stored in the crucible 2a is heated and vaporized, and the titanium oxide molecules are scattered from the vaporization source 2 in the form of clusters. Start moving toward the area (two-dot chain line in the figure). Since the excited oxygen molecules are filled in the film forming chamber 10, the cluster is subjected to a strong oxidizing action when moving in this space, and the surface of the substrate 7 undergoes T oxidation.
An oxide film made of iO 2 is formed.

【0013】このように、酸素雰囲気下の成膜室10内
において紫外線を照射する構成としたので、従来方式に
比較して成膜室10内を低い酸素分圧にしても、基板7
上に酸化膜を形成するのに充分な酸化力を得ることがで
きる。したがって、より良質な酸化膜を被蒸着面に作成
することもできる。 〔他の実施例〕 (a) 上記実施例では、紫外線照射手段として水銀ラ
ンプ5を使用したが、レーザ、蛍光ランプ等も紫外線照
射手段として用いることができる。 (b) 上記の実施例では、窓11の透光面にガラス体
を使用したが、紫外線を透過させる性質を有する透明樹
脂等を用いてもよい。この場合、蒸発した蒸着酸化物が
透光面に蒸着することを防ぐために、表面特性の異なる
材質のものを使い分けることができる。
As described above, since the ultraviolet irradiation is performed in the film forming chamber 10 under the oxygen atmosphere, the substrate 7 can be formed even if the film forming chamber 10 has a lower oxygen partial pressure than the conventional method.
It is possible to obtain sufficient oxidizing power to form an oxide film on top. Therefore, a higher quality oxide film can be formed on the deposition surface. [Other Examples] (a) In the above examples, the mercury lamp 5 was used as the ultraviolet irradiation means, but a laser, a fluorescent lamp, or the like can also be used as the ultraviolet irradiation means. (B) In the above embodiment, the glass body is used for the light transmitting surface of the window 11, but a transparent resin or the like having a property of transmitting ultraviolet rays may be used. In this case, in order to prevent vaporized vapor-deposited oxide from vapor-depositing on the transparent surface, it is possible to properly use materials having different surface characteristics.

【0014】また、透光面にレンズを用いてもよい。こ
の場合、照射光を集光あるいは拡散することができる。
さらに、特定波長を選別,除去するために、フィルター
を用いてもよい。
A lens may be used on the transparent surface. In this case, the irradiation light can be condensed or diffused.
Furthermore, a filter may be used to select and remove a specific wavelength.

【0015】[0015]

【発明の効果】本発明に係る成膜装置では、酸素供給手
段により供給された真空チャンバ内の酸素に紫外線を照
射し、真空チャンバ内の酸素の反応性を高める構成とし
たので、蒸発物は基板の被蒸着表面に良質な酸化膜を作
成することができる。
In the film forming apparatus according to the present invention, the oxygen in the vacuum chamber supplied by the oxygen supplying means is irradiated with ultraviolet rays to enhance the reactivity of oxygen in the vacuum chamber. A good quality oxide film can be formed on the surface of the substrate to be vapor-deposited.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の縦断面概略図。FIG. 1 is a schematic vertical sectional view of an embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 チャンバ 2 蒸発源 3 基板ホルダ 4 酸素供給装置 5 水銀ランプ 6 蒸着酸化物 7 基板 1 Chamber 2 Evaporation Source 3 Substrate Holder 4 Oxygen Supply Device 5 Mercury Lamp 6 Evaporated Oxide 7 Substrate

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】真空チャンバと、 前記真空チャンバに配置された蒸発源と、 前記蒸発源に対向する側に配置された基板と、 前記真空チャンバ内に酸素を供給するための酸素供給手
段と、 前記酸素供給手段により供給される酸素に紫外線を照射
するための紫外線照射手段と、を備えた成膜装置。
1. A vacuum chamber, an evaporation source arranged in the vacuum chamber, a substrate arranged on the side opposite to the evaporation source, and an oxygen supply means for supplying oxygen into the vacuum chamber. An ultraviolet irradiation unit for irradiating the oxygen supplied by the oxygen supplying unit with ultraviolet rays, and a film forming apparatus.
JP11093092A 1992-04-30 1992-04-30 Film forming device Pending JPH05306455A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11093092A JPH05306455A (en) 1992-04-30 1992-04-30 Film forming device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11093092A JPH05306455A (en) 1992-04-30 1992-04-30 Film forming device

Publications (1)

Publication Number Publication Date
JPH05306455A true JPH05306455A (en) 1993-11-19

Family

ID=14548214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11093092A Pending JPH05306455A (en) 1992-04-30 1992-04-30 Film forming device

Country Status (1)

Country Link
JP (1) JPH05306455A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6511921B1 (en) * 1999-01-12 2003-01-28 Sumco Phoenix Corporation Methods for reducing the reactivity of a semiconductor substrate surface and for evaluating electrical properties of a semiconductor substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6511921B1 (en) * 1999-01-12 2003-01-28 Sumco Phoenix Corporation Methods for reducing the reactivity of a semiconductor substrate surface and for evaluating electrical properties of a semiconductor substrate

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