JP2005126759A - Vacuum deposition apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vacuum deposition apparatus which quantitatively grasps a position irradiated with an electron beam on a vapor-depositing raw material, and even when the position irradiated with the electron beam has been deviated from the aiming position, corrects the irradiated position with adequate reproducibility and accuracy. <P>SOLUTION: The vacuum deposition apparatus 101 comprises a vacuum chamber 2, a vacuum pump 3, a substrate holder 5 for holding a semiconductor substrate 4, a crucible 7 having the vapor-depositing raw material 6 accommodated therein, an electron-beam-producing part 9 for producing an electron beam 8, a deflecting electromagnetic coil body 10 and the power source 11, a shutter 13, a CCD camera 102 which recognizes the position irradiated with the electron beam 8 from a difference of intensities between reflected lights, and a section 103 for controlling the direction of the electron beam having one end connected to the CCD camera 102 and another end connected to the power source 11 of the deflecting electromagnetic coil body 10. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a vacuum vapor deposition apparatus for forming a film by irradiating a vapor deposition raw material with an electron beam in a vacuum, evaporating the vapor deposition raw material, and depositing it on a substrate to be processed.

  FIG. 2 shows a longitudinal sectional view of an essential part of an example of a conventional vacuum deposition apparatus.

  The vacuum deposition apparatus 1 is mainly disposed in a vacuum chamber 2 capable of maintaining the inside thereof in a high vacuum state, a vacuum pump 3 for exhausting the inside of the vacuum chamber 2 to a high vacuum, and the vacuum chamber 2 to be processed. A substrate holder 5 that holds, for example, a semiconductor substrate 4 as a substrate, a crucible 7 containing a vapor deposition material 6 disposed so as to face it, and an electron beam 8 that irradiates and heats the vapor deposition material 6 (solid arrows in the figure) ), A deflection electromagnetic coil body 10 for controlling the irradiation position of the electron beam 8 on the deposition material 6 and its power source 11, and an evaporation flow 12 (broken arrows in the figure) from the deposition material 6. The shutter 13 is configured to release and block (a discharge position is indicated by a solid line and a cutoff position is indicated by a two-dot chain line).

  Further, a viewing window 2 a made of a glass plate or the like for observing the inside is provided on the side wall of the vacuum chamber 2.

  The crucible 7 is positioned so that the center of the vapor deposition material 6 accommodated in the crucible 7 is directly below the center of the semiconductor substrate 4, and the evaporation flow 12 from the vapor deposition material 6 is more than the semiconductor substrate 4. Make sure to deposit evenly. Incidentally, the electron beam 8 is set so as to aim at the center of the vapor deposition raw material 6 in advance by controlling the irradiation position by the deflection electromagnetic coil body 10 or the like.

  Here, an enlarged view of the periphery of the electron beam generator 9 is shown in FIG. 3A is a perspective view, and FIG. 3B is a cross-sectional view taken along line XX in FIG.

  The electron beam generator 9 is disposed under the crucible 7 containing the two magnetic pole plates 15a and 15b which are arranged in parallel with the permanent magnet 14 interposed therebetween and excited to the N pole and the S pole, and the vapor deposition material 6 therebetween. The electron gun 16 is made up of.

  Further, the electron gun 16 is composed of a filament 17, a grid 19 supported by a grid support plate 18, and an anode 20. The filament 17 is connected to a filament heating power source 21, and an acceleration power source having one end connected to the crucible 7. 22 is connected.

  A deflection electromagnetic coil body 10 in which an X-direction scanning deflection coil and a Y-direction scanning deflection coil orthogonal to each other are wound around an annular iron core is disposed on the path of the electron beam 8, and The eight irradiation positions can be controlled in a two-dimensional direction.

  The deflection electromagnetic coil body 10 is supported by a holder (not shown) made of a non-magnetic material in the vicinity of the crucible 7 between the magnetic pole plates 15a and 15b, and is supplied to a power source 11 for flowing current through the deflection electromagnetic coil body 10. It is connected, and (voltage) adjustment is possible with an adjustment knob outside the vacuum chamber 2.

  Then, the electron beam 8 emitted from the filament 17 is accelerated by the anode 20 and bent so as to draw a Larmor circle by a magnetic field generated by the magnetic pole plates 15a and 15b and a two-dimensional magnetic field generated by the deflection electromagnetic coil body 10. 7 is irradiated to the center C of the vapor deposition raw material 6 inside.

  Next, operation | movement of the vacuum evaporation system 1 is demonstrated. First, the semiconductor substrate 4 is held on the substrate holder 5 and the vacuum pump 3 is operated to reduce the pressure in the vacuum chamber 2 to a desired vacuum level.

  Next, when the inside of the vacuum chamber 2 reaches a desired degree of vacuum, first, the electron gun 16 irradiates the electron beam 8 substantially perpendicularly to the center of the vapor deposition raw material 6 to heat and dissolve the vapor deposition raw material 6 to heat and deposit the surface of the vapor deposition raw material 6. A so-called gas out operation is performed for the purpose of evaporating the impurities and making the surface state uniform. This gas out operation is performed with the shutter 13 in a shut-off state.

  At this time, the fact that the electron beam 8 is applied to the center C of the vapor deposition material 6 is checked through the viewing window 2a of the vacuum chamber 2 and confirmed by the reflected light.

  Thereafter, when the gas out operation is completed, the shutter 13 is released and the evaporation flow 12 is discharged toward the surface of the semiconductor substrate 4 to perform a predetermined film formation.

Next, when film formation is completed, the shutter 13 is shut off at that time and the electron gun 16 is stopped to complete the film formation (see, for example, Patent Document 1).
JP 2001-271157 A (2nd page, paragraph 0003, FIG. 2)

  In the conventional vacuum deposition apparatus 1, as described above, the electron beam 8 is set in advance so as to irradiate the center C of the deposition raw material 6 before starting the deposition operation. However, as the deposition operation proceeds, the temperature and filament in the vacuum chamber 2 are set. As a result, the irradiation position is gradually shifted from the center C of the vapor deposition raw material 6, and there is a possibility that uniform film formation cannot be obtained on the semiconductor substrate 4.

  For this reason, the operator sometimes has to check whether the irradiation position of the electron beam 8 has changed from the observation window 2a. If the irradiation position deviates from the target position, it is necessary to turn the adjustment knob of the power source 11 of the deflection electromagnetic coil body 10 to return the irradiation position to the center C of the vapor deposition raw material 6. there were.

  However, such an operation is an operation that requires skill depending on human senses, and the irradiation position cannot always be corrected with high reproducibility and accuracy.

  The object of the present invention is to quantitatively grasp the irradiation position of the electron beam on the deposition material, and correct the irradiation position with good reproducibility and accuracy even when the irradiation position of the electron beam deviates from the target position. It is to provide a vacuum deposition apparatus.

  The vacuum deposition apparatus of the present invention holds at least a vacuum chamber capable of maintaining the inside in a high vacuum state, a vacuum pump for exhausting the inside of the vacuum chamber to a high vacuum, and a substrate to be processed disposed in the vacuum chamber. A substrate holder, a crucible for accommodating an evaporation source disposed opposite to the substrate holder, an electron gun for generating an electron beam, and a deflection electromagnetic coil body for controlling an irradiation position of the electron beam on the evaporation source, A vacuum deposition apparatus comprising a recognition means for recognizing an irradiation position of an electron beam with respect to a deposition material in a vacuum deposition apparatus for irradiating and evaporating a beam onto the deposition material and depositing the evaporated flow on a substrate to be processed. Device.

  According to the vacuum deposition apparatus of the present invention, since the recognition means for recognizing the irradiation position of the electron beam with respect to the deposition material is provided, even when the irradiation position of the electron beam with respect to the deposition material deviates from the target position, the reproducibility and accuracy are high. The irradiation position can be corrected.

  When the irradiation position of the electron beam on the deposition material deviates from the target position, the electron beam irradiation on the deposition material is aimed at correcting the irradiation position with high reproducibility and accuracy without relying on an uncertain human sense. Realized by having a recognition means to recognize the position.

  An example of the vacuum deposition apparatus of the present invention is shown in FIG. FIG. 1A is a longitudinal sectional view of an essential part of a vacuum vapor deposition apparatus, and FIG. 1B is a partially enlarged sectional view of the periphery of an electron beam generating part in FIG. 2 and 3 are denoted by the same reference numerals.

  The vacuum deposition apparatus 101 is mainly disposed in the vacuum chamber 2 that can maintain the inside in a high vacuum state, the vacuum pump 3 that exhausts the inside of the vacuum chamber 2 to a high vacuum, and the vacuum chamber 2. A substrate holder 5 that holds, for example, a semiconductor substrate 4 as a substrate, a crucible 7 containing a vapor deposition material 6 disposed so as to face it, and an electron beam 8 that irradiates and heats the vapor deposition material 6 (solid arrows in the figure) ), A deflection electromagnetic coil body 10 for controlling the irradiation position of the electron beam 8 on the deposition material 6 and its power source 11, and an evaporation flow 12 (broken arrows in the figure) from the deposition material 6. A shutter 13 that emits and shuts off (the emission position is indicated by a solid line and the cutoff position is indicated by a two-dot chain line), and the irradiation position of the electron beam 8 on the deposition material 6 is reflected light from the entire surface of the deposition material 6. The CCD camera 102, which is a feature of the present invention, is recognized by the intensity difference from the reflected light from the child beam 8 irradiation position, and an electron beam having one end connected to the CCD camera 102 and the other end connected to the power source 11 of the deflection electromagnetic coil body 10. The position control unit 103 is configured.

  Further, a viewing window 2 a made of a glass plate or the like for observing the inside is provided on the side wall of the vacuum chamber 2.

  The crucible 7 is positioned so that the center of the vapor deposition material 6 accommodated in the crucible 7 is directly below the center of the semiconductor substrate 4, and the evaporation flow 12 from the vapor deposition material 6 is more than the semiconductor substrate 4. Make sure to deposit evenly. Incidentally, the electron beam 8 is set so as to aim at the center of the vapor deposition raw material 6 in advance by controlling the irradiation position by the deflection electromagnetic coil body 10 or the like.

  Further, the electron beam position control unit 103 converts the recognition image of the irradiation position of the electron beam 8 recognized by the CCD camera 102 into, for example, numerical data on orthogonal coordinates with the center of the vapor deposition material 6 as the origin, and from the origin. The displacement amount of the electron beam 8 can be corrected to a predetermined position by adjusting the voltage 11 of the power supply 11 of the deflection electromagnetic coil body 10 based on the numerical data.

  The CCD camera 102 is disposed at a position that does not interfere with the vapor deposition operation of the upper corner in the vacuum chamber 2 and at a position where the entire surface of the vapor deposition raw material 6 can be recognized even when the shutter 13 is in a shut-off state. The irradiation position of the electron beam 8 can be recognized at this timing. Further, a pollution prevention cover 102a that can be freely opened and closed is appropriately attached so that the CCD camera 102 can be prevented from being contaminated by the evaporative flow 12 or the like except when the irradiation position is recognized.

  As shown in FIG. 1B, the electron beam generator 9 includes two magnetic pole plates 15a and 15b that are arranged in parallel with the permanent magnet 14 interposed therebetween and excited to the N pole and the S pole, and a vapor deposition material therebetween. 6 and an electron gun 16 disposed under the crucible 7 in which 6 is accommodated.

  Further, the electron gun 16 is composed of a filament 17, a grid 19 supported by a grid support plate 18, and an anode 20. The filament 17 is connected to a filament heating power source 21, and an acceleration power source having one end connected to the crucible 7. 22 is connected.

  A deflection electromagnetic coil body 10 in which an X-direction scanning deflection coil and a Y-direction scanning deflection coil orthogonal to each other are wound around an annular iron core is disposed on the path of the electron beam 8, and The eight irradiation positions can be controlled in a two-dimensional direction.

  The deflection electromagnetic coil body 10 is supported by a holder (not shown) made of a non-magnetic material in the vicinity of the crucible 7 between the magnetic pole plates 15a and 15b, and is supplied to a power source 11 for flowing current through the deflection electromagnetic coil body 10. It is connected and can be adjusted (voltage) by an adjustment knob outside the vacuum chamber 2 and can be controlled by a signal from the electron beam position control unit 103.

  Then, the electron beam 8 emitted from the filament 17 is accelerated by the anode 20 and bent so as to draw a Larmor circle by a magnetic field generated by the magnetic pole plates 15a and 15b and a two-dimensional magnetic field generated by the deflection electromagnetic coil body 10. 7 is irradiated to the center C of the vapor deposition raw material 6 inside.

  Next, operation | movement of the vacuum evaporation system 101 is demonstrated. First, the semiconductor substrate 4 is held on the substrate holder 5 and the vacuum pump 3 is operated to reduce the pressure in the vacuum chamber 2 to a desired vacuum level.

  Next, when the inside of the vacuum chamber 2 reaches a desired degree of vacuum, first, the electron gun 16 irradiates the electron beam 8 substantially perpendicularly to the center of the vapor deposition raw material 6 to heat and dissolve the vapor deposition raw material 6 to heat and deposit the surface of the vapor deposition raw material 6. A so-called gas out operation is performed for the purpose of evaporating the impurities and making the surface state uniform. This gas out operation is performed with the shutter 13 in a shut-off state.

  At this time, the irradiation position of the electron beam 8 is recognized by the CCD camera 102, and the recognized image is sent to the electron beam position control unit 103. The electron beam position control unit 103 converts, for example, the irradiation position of the electron beam 8 into numerical data on orthogonal coordinates with the center of the deposition material 6 as the origin, grasps the amount of deviation from the origin, If it is within the reference value, the subsequent operations are performed as usual. If it is outside the predetermined reference value, the power supply 11 of the deflection electromagnetic coil body 10 is adjusted (voltage) based on the numerical data, and the irradiation position of the electron beam 8 is corrected within the reference value. Note that such confirmation and correction of the irradiation position can be performed at an arbitrary timing thereafter.

  Thereafter, when the gas out operation is completed, the shutter 13 is released and the evaporation flow 12 is discharged toward the surface of the semiconductor substrate 4 to perform a predetermined film formation.

  Next, when the film formation is completed, the shutter 13 is shut off at that time and the electron gun 16 is stopped to complete the film formation.

  In the above description, the CCD camera 102 is used as the means for recognizing the irradiation position of the electron beam 8 with respect to the vapor deposition material 6. However, the present invention is not limited to this, and an infrared camera (not shown) may be used. Further, as another configuration, the recognition means is a thermoviewer (not shown) for quantitatively grasping the temperature distribution on the surface of the vapor deposition raw material 6, and the temperature difference between the irradiation position of the electron beam 8 and the other vapor deposition raw material 6 portion is determined. You may make it grasp | ascertain an irradiation position using.

  When the irradiation position of the electron beam with respect to the deposition material is quantitatively recognized and the irradiation position deviates from the target position, it can be applied to a vacuum deposition apparatus having a function capable of correcting the irradiation position with good reproducibility and accuracy.

The principal part longitudinal cross-sectional view of an example of the vacuum evaporation system of this invention, and the partial expanded sectional view around an electron beam generation part Longitudinal longitudinal sectional view of an example of a conventional vacuum deposition apparatus Enlarged view around the electron beam generator of a conventional vacuum evaporation system

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Conventional vacuum deposition apparatus 2 Vacuum chamber 2a Viewing window
DESCRIPTION OF SYMBOLS 3 Vacuum pump 4 Semiconductor substrate 5 Substrate holder 6 Vapor deposition raw material 7 Crucible 8 Electron beam 8a Electron beam shifted from aim position 9 Electron beam generation part 10 Deflection electromagnetic coil body
DESCRIPTION OF SYMBOLS 11 Power supply 12 Evaporation flow 13 Shutter 14 Permanent magnet 15a, 15b Magnetic pole plate 16 Electron gun
DESCRIPTION OF SYMBOLS 17 Filament 18 Grid support plate 19 Grid 20 Anode 21 Filament heating power supply 22 Acceleration power supply 101 Vacuum deposition apparatus 102 CCD camera 102a Contamination prevention cover of this invention
103 Electron beam position control unit C Center of evaporation source

Claims (4)

  At least a vacuum chamber capable of maintaining the inside in a high vacuum state, a vacuum pump for exhausting the inside of the vacuum chamber to a high vacuum, a substrate holder disposed in the vacuum chamber and holding a substrate to be processed, and the substrate A crucible for accommodating a vapor deposition material disposed facing the holder, an electron gun for generating an electron beam, and a deflection electromagnetic coil body for controlling an irradiation position of the electron beam on the vapor deposition material, In a vacuum vapor deposition apparatus for irradiating and evaporating a vapor deposition material and depositing the evaporated flow on the substrate to be processed, the vacuum comprises a recognition means for recognizing the irradiation position of the electron beam with respect to the vapor deposition material. Vapor deposition equipment.   The vacuum deposition apparatus according to claim 1, wherein the recognition means is a CCD camera or an infrared camera that detects reflected light from the deposition material.   The vacuum deposition apparatus according to claim 1, wherein the recognition unit is a thermoviewer that detects a surface temperature distribution of the deposition material. An electron beam position control unit capable of converting the irradiation position of the electron beam with respect to the vapor deposition material recognized by the recognition means into numerical data and controlling a power source of the deflection electromagnetic coil body based on the numerical data. The vacuum evaporation apparatus according to any one of claims 1 to 3.

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