JPH05306197A - Method for growing beta-barium borate single crystal - Google Patents
Method for growing beta-barium borate single crystalInfo
- Publication number
- JPH05306197A JPH05306197A JP13565092A JP13565092A JPH05306197A JP H05306197 A JPH05306197 A JP H05306197A JP 13565092 A JP13565092 A JP 13565092A JP 13565092 A JP13565092 A JP 13565092A JP H05306197 A JPH05306197 A JP H05306197A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- beta
- single crystal
- growing
- barium borate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、高品質なベータバリウ
ムボレイト（β−ＢａＢ2Ｏ4）単結晶（以下、ＢＢＯと
略記する。）を種結晶を用いて引き上げ法で育成する方
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for growing a high quality beta barium borate (β-BaB 2 O 4 ) single crystal (hereinafter abbreviated as BBO) by a pulling method using a seed crystal. .
【０００２】[0002]
【従来の技術】従来、種結晶を用いたＢＢＯの引き上げ
育成は、シーディングしてから結晶の直径を増加させて
肩出しをし、直胴部を育成する際、結晶の形状のコント
ロールは高周波炉の出力を調整することによって行って
いた。2. Description of the Related Art Conventionally, when pulling up and growing a BBO using a seed crystal, it is necessary to increase the diameter of the crystal after seeding so as to perform shouldering and to control the shape of the crystal when growing a straight body. It was done by adjusting the power of the furnace.
【０００３】[0003]
【発明が解決しようとする課題】ところが、育成される
結晶は結晶内に微小角粒界が生じ、クラックが発生する
場合が多く、歩留まりが悪かった。本発明の目的は、微
小角粒界のない高品質なＢＢＯ単結晶を歩留まりよく育
成することにある。However, in the grown crystal, minute grain boundaries are often generated in the crystal and cracks often occur, resulting in poor yield. An object of the present invention is to grow a high-quality BBO single crystal having no minute grain boundaries with high yield.
【０００４】[0004]
【課題を解決するための手段】本発明は、ベータバリウ
ムボレイト（β−ＢａＢ2Ｏ4）単結晶をβ相の種結晶を
用いて高周波炉で引き上げ法により育成することよりな
る単結晶の育成方法であって、種結晶を融液に接触させ
た後、高周波出力を一定にした状態で引き上げ育成を行
うことを特徴とするベータバリウムボレイト単結晶の育
成方法である。DISCLOSURE OF THE INVENTION The present invention provides a single crystal comprising growing a beta barium borate (β-BaB 2 O 4 ) single crystal by a pulling method in a high frequency furnace using a β phase seed crystal. A method for growing a beta-barium borate single crystal, which is a method for growing a beta-barium borate single crystal, which comprises bringing a seed crystal into contact with a melt and then pulling and growing the crystal while keeping a high-frequency output constant.
【０００５】[0005]
【作用】種結晶に晶出する結晶形は、融液からの熱の供
給、結晶晶出時の潜熱および結晶からの熱の逃げによる
熱収支のバランスで決定される。高周波炉を用いβ相を
ＢａＢ2Ｏ4組成融液から直接育成させるためにはβ相が
育成される熱収支の条件を安定させなくてはならない
が、高周波炉出力を変動させてこの条件を保持すること
は非常に難しく、熱収支のバランスが崩れると結晶内に
微小角粒界が生じてしまう。種結晶を融液に接触させて
種結晶の先に晶出する結晶の直径を２〜４ｍｍ程度に調
節し、その後高周波出力を変動させないで引き上げを開
始することで、結晶自身が直径を変化させてβ相が安定
して育成する熱収支の条件を保持することができ、微小
角粒界の発生を抑えることができる。The crystal form crystallized in the seed crystal is determined by the balance of heat supply from the melt, the latent heat during crystal crystallization, and the heat balance due to the escape of heat from the crystal. In order to grow the β phase directly from the BaB 2 O 4 composition melt using a high frequency furnace, the heat balance conditions for growing the β phase must be stabilized, but by changing the output of the high frequency furnace, It is very difficult to maintain, and if the balance of heat balance is lost, minute grain boundaries are generated in the crystal. The diameter of the crystal itself is changed by bringing the seed crystal into contact with the melt and adjusting the diameter of the crystal that crystallizes at the tip of the seed crystal to about 2 to 4 mm, and then starting pulling without changing the high frequency output. As a result, the heat balance condition for stable growth of the β phase can be maintained, and the generation of minute grain boundaries can be suppressed.
【０００６】[0006]
【実施例】次に本発明の実施例について説明する。β−
ＢａＢ2Ｏ4の粉末原料を用い、４０ｍｍの白金坩堝に充
填した。直径１．５ｍｍ、長さ５０ｍｍのＢＢＯ単結晶
を種結晶に用い、融液に接触させて種結晶の先に晶出し
た結晶の直径を３ｍｍになるように高周波出力を調節し
た後、出力は一定とし、引き上げを開始した。育成速度
３ｍｍ／ｈｒ、雰囲気は空気、種結晶回転数１２ｒｐｍ
で引き上げ育成を行ったところ、直径１０ｍｍ、長さ３
０ｍｍの微小角粒界のない高品質のβ−ＢａＢ2Ｏ4単結
晶が育成された。EXAMPLES Next, examples of the present invention will be described. β-
A powder raw material of BaB 2 O 4 was used to fill a 40 mm platinum crucible. A BBO single crystal having a diameter of 1.5 mm and a length of 50 mm was used as a seed crystal, and the high frequency output was adjusted so that the diameter of the crystal that was crystallized before the seed crystal was 3 mm by contacting with the melt, and then the output was It has been fixed and the pulling has started. Growth speed 3 mm / hr, atmosphere is air, seed crystal rotation speed 12 rpm
It was pulled up and cultivated at 10mm in diameter and 3mm in length.
High quality β-BaB 2 O 4 single crystals without 0 mm fine grain boundaries were grown.
【０００７】[0007]
【発明の効果】以上説明したように、本発明によれば、
微小角粒界のない高品質なβ−ＢａＢ2Ｏ4単結晶を容易
に歩留まりよく育成することができる。As described above, according to the present invention,
A high-quality β-BaB 2 O 4 single crystal having no minute horn grain boundaries can be easily grown with high yield.
Claims (1)
Ｏ4）単結晶をβ相の種結晶を用いて高周波炉で引き上
げ法により育成することよりなる単結晶の育成方法であ
って、種結晶を融液に接触させた後、高周波出力を一定
にした状態で引き上げ育成を行うことを特徴とするベー
タバリウムボレイト単結晶の育成方法。1. Beta barium borate (β-BaB 2
A method for growing a single crystal, which comprises growing an O 4 ) single crystal by a pulling method in a high-frequency furnace using a β-phase seed crystal, wherein the high-frequency output is kept constant after the seed crystal is brought into contact with the melt. A method for growing a beta-barium borate single crystal, which comprises pulling and growing in a state of being formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13565092A JPH05306197A (en) | 1992-04-30 | 1992-04-30 | Method for growing beta-barium borate single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13565092A JPH05306197A (en) | 1992-04-30 | 1992-04-30 | Method for growing beta-barium borate single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05306197A true JPH05306197A (en) | 1993-11-19 |
Family
ID=15156758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13565092A Pending JPH05306197A (en) | 1992-04-30 | 1992-04-30 | Method for growing beta-barium borate single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05306197A (en) |
-
1992
- 1992-04-30 JP JP13565092A patent/JPH05306197A/en active Pending
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