JPH0530162U - Plate cleaning equipment surface cleaning equipment - Google Patents
Plate cleaning equipment surface cleaning equipmentInfo
- Publication number
- JPH0530162U JPH0530162U JP7839191U JP7839191U JPH0530162U JP H0530162 U JPH0530162 U JP H0530162U JP 7839191 U JP7839191 U JP 7839191U JP 7839191 U JP7839191 U JP 7839191U JP H0530162 U JPH0530162 U JP H0530162U
- Authority
- JP
- Japan
- Prior art keywords
- plate
- lid
- vacuum container
- cleaning equipment
- processing material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
(57)【要約】
【目的】 効率よく板状処理材の表面を清浄化する板状
処理材の表面清浄化装置を提供することを目的とする。
【構成】 陽極を形成する真空容器本体（２）と該容器
本体の周縁に絶縁材（４）を介して取り付ける陰極を形
成する蓋体（３）とからなる真空容器（１）と、前記蓋
体の内面に板状処理材（Ｗ）を近接して取り付ける支持
部材（６）と、前記蓋体の外面に処理材の長手方向に平
行移動する磁場発生源である磁石（８）と、で構成した
ことを特徴とする板状処理材の表面清浄化装置。
(57) [Abstract] [Purpose] It is an object of the present invention to provide a surface cleaning apparatus for a plate-shaped treated material, which efficiently cleans the surface of the plate-shaped treated material. A vacuum container (1) comprising a vacuum container body (2) forming an anode and a lid body (3) forming a cathode attached to the periphery of the container body via an insulating material (4), and the lid. A support member (6) for mounting the plate-shaped processing material (W) in close proximity to the inner surface of the body, and a magnet (8) that is a magnetic field generation source that translates in the longitudinal direction of the processing material on the outer surface of the lid body. An apparatus for cleaning a surface of a plate-like treated material, which is configured.
Description
【０００１】[0001]
本考案は、板状処理材の表面清浄化装置に関するものである。 The present invention relates to a surface cleaning device for a plate-shaped treated material.
【０００２】[0002]
従来、板状処理材の表面に薄膜をＣＶＤ装置あるいはＰＶＤ装置等により成膜 する場合、予め処理材表面を清浄化（クリーニング）しておくことが、薄膜の密 着性向上の点から効果的である。 したがって、従来、陽極に永久磁石を使用したアノードマグネトロンの放電に よるイオンボンバード（イオンによる衝撃）によりエッチングを行って清浄化す ることが行われている。 しかしながら、この方法では、プラズマの強度が弱く、エッチングの速度が遅 いため、大量に処理するには処理時間が長くかかるという課題を有していた。 本考案は効率よくプラズマを発生させ、従来の課題を解決することのできる板 状処理材の表面清浄化装置を提供することを目的とする。 Conventionally, when a thin film is formed on the surface of a plate-like treated material by a CVD apparatus or a PVD apparatus, it is effective to clean the surface of the treated material in advance from the viewpoint of improving the adhesion of the thin film. Is. Therefore, conventionally, cleaning is performed by performing etching by ion bombardment (impact by ions) due to discharge of an anode magnetron that uses a permanent magnet for the anode. However, this method has a problem that it takes a long processing time to process a large amount because the plasma intensity is weak and the etching rate is slow. An object of the present invention is to provide a surface cleaning apparatus for a plate-shaped treated material, which can efficiently generate plasma and solve the conventional problems.
【０００３】[0003]
本考案は、前記目的を達成するために、板状処理材の表面清浄化装置を、陽極 を形成する真空容器本体と該容器本体の周縁に絶縁材を介して取り付ける陰極を 形成する蓋体とからなる真空容器と、前記蓋体の内面に板状処理材を近接して取 り付ける支持部材と、前記蓋体の外面に処理材の長手方向に平行移動する磁場発 生源である磁石とで構成したものである。 In order to achieve the above-mentioned object, the present invention provides a surface cleaning apparatus for a plate-shaped treatment material, a vacuum container body forming an anode, and a lid forming a cathode attached to the periphery of the container body via an insulating material. Consisting of a vacuum container, a support member for mounting the plate-shaped processing material in close proximity to the inner surface of the lid, and a magnet that is a magnetic field generating source that translates in the longitudinal direction of the processing material on the outer surface of the lid. It is composed.
【０００４】[0004]
つぎに、本考案の実施例を図面にしたがって説明する。 図において、１は真空容器本体２と蓋体３とからなる真空容器で、前記真空容 器本体２と蓋体３とはその縁部を絶縁材４および真空シール材５を介して適宜一 体化されるものである。 Next, an embodiment of the present invention will be described with reference to the drawings. In the figure, reference numeral 1 denotes a vacuum container composed of a vacuum container body 2 and a lid body 3. The vacuum container body 2 and the lid body 3 are properly integrated at their edges via an insulating material 4 and a vacuum seal material 5. It will be converted.
【０００５】 ６は処理すべき板状の処理材Ｗを前記蓋体３の内面に密着あるいは近接して保 持するための処理材支持部材で、実施例では略口字形の枠体の、内方縁部に、前 記処理材Ｗの外周縁部を載置する段部７を備え、図示しない付勢手段で、前述の ように処理材Ｗの上面を付勢して蓋体３に密着させるようになっている。Reference numeral 6 denotes a processing material support member for holding the plate-shaped processing material W to be processed in close contact with or close to the inner surface of the lid body 3. In the embodiment, the inside of a substantially square frame is used. The edge portion is provided with a step portion 7 on which the outer peripheral edge portion of the treatment material W is placed, and the upper surface of the treatment material W is urged by the urging means (not shown) to adhere to the lid body 3 as described above. It is designed to let you.
【０００６】 ８は永久磁石で、図１から明らかなように、その長さは前記処理材Ｗの巾より 長いもので、図示しない駆動手段で、蓋体３の一側から他側に移動可能となって いる。Reference numeral 8 denotes a permanent magnet, which has a length longer than the width of the processing material W, as is apparent from FIG. 1, and can be moved from one side of the lid 3 to the other side by a driving means (not shown). Has become.
【０００７】 また、前記真空容器本体２と蓋体３には、電圧が印加され、前者は陽極に、後 者は陰極となり、さらに、真空容器１内の真空室９には放電用ガス、たとえばＡ ｒガスが供給されるとともに、真空容器２内が約１０-4〜１０-1Ｔｏｒｒに減圧 されている。A voltage is applied to the vacuum container body 2 and the lid body 3, the former serves as an anode, the latter serves as a cathode, and a vacuum chamber 9 in the vacuum container 1 is provided with a discharge gas such as The Ar gas is supplied and the inside of the vacuum container 2 is depressurized to about 10 −4 to 10 −1 Torr.
【０００８】 したがって、図２に示すように、処理材Ｗを装着して、容器本体（陽極）２と 蓋体（陰極）３とにそれぞれ電圧を印加して永久磁石８を処理材Ｗの長手方向に 移動させると、永久磁石８の移動につれて処理材Ｗの下面近傍に移動磁場が形成 され、放電がこの部分に集中的に起こり、プラズマが順次形成され、これによっ て処理材Ｗの下面は全面に亙って均一にスパッタされ、エッチングされる。Therefore, as shown in FIG. 2, the treatment material W is mounted, and a voltage is applied to the container body (anode) 2 and the lid body (cathode) 3, respectively, so that the permanent magnet 8 is moved in the longitudinal direction of the treatment material W. When moved in the direction, a moving magnetic field is formed in the vicinity of the lower surface of the processing material W as the permanent magnet 8 moves, discharge is concentrated in this portion, and plasma is sequentially formed, whereby the lower surface of the processing material W is formed. Is uniformly sputtered and etched over the entire surface.
【０００９】 なお、前記処理材支持部材６は、前記放電により蓋体３がエッチングされるの を防止するとともに、スパッタされた蓋体３の成分（不純物）が処理材Ｗに付着 することを防止するために、処理材Ｗと同一もしくは類似の材質のもので構成す るのが好ましい。The treatment material support member 6 prevents the lid body 3 from being etched by the discharge, and prevents the sputtered components (impurities) of the lid body 3 from adhering to the treatment material W. Therefore, it is preferable that the processing material W is made of the same or similar material.
【００１０】 また、前記実施例では、処理材Ｗが電導性のある材料であるが、絶縁性材料の 場合には、図３に示すように、高周波電源をマッチングボックス１０を介して高 周波電圧を印加する。 さらに、実施例では、１枚の処理材Ｗを処理する場合について述べたが、図３ に示すように、前述の真空容器本体２を複数個並設し、これらに１枚の共通の蓋 体３を設け、共通の電源で電圧を印加し、蓋体３上に１個の永久磁石８を移動さ せることにより、複数の処理材Ｗを順次処理するようにしてもよく、また、永久 磁石８の代りに電磁石であってもよい。Further, in the above-mentioned embodiment, the processing material W is a material having electrical conductivity. However, when the processing material W is an insulating material, as shown in FIG. Is applied. Further, in the embodiment, the case where one processing material W is processed has been described. However, as shown in FIG. 3, a plurality of the above-mentioned vacuum container main bodies 2 are arranged side by side, and one common cover body is provided for them. 3 may be provided and a voltage may be applied by a common power source to move one permanent magnet 8 on the lid 3 so that a plurality of treatment materials W are sequentially treated. Instead of 8, an electromagnet may be used.
【００１１】[0011]
以上の説明で明らかなように、本考案によれば、マグネトロン放電を処理材表 面近傍に集中させるためスパッタが効率よく行え、処理材を効率よく清浄化する ことができる。しかも、処理材全面に亙って放電をかける必要はなく、しかも磁 石の移動により処理材の全面を均一に清浄処理を行うことができる。 As is clear from the above description, according to the present invention, since the magnetron discharge is concentrated near the surface of the treated material, sputtering can be performed efficiently and the treated material can be cleaned efficiently. Moreover, it is not necessary to apply an electric discharge over the entire surface of the treated material, and moreover, the entire surface of the treated material can be uniformly cleaned by moving the magnet.
【図面の簡単な説明】[Brief description of drawings]
【図１】 本考案にかかる板状処理材の表面清浄化装置
の平面図。FIG. 1 is a plan view of a surface cleaning device for a plate-shaped processing material according to the present invention.
【図２】 図１のII−II線断面図。FIG. 2 is a sectional view taken along line II-II of FIG.
【図３】 本考案にかかる板状処理材の表面清浄化装置
の他の実施例を示す断面図。FIG. 3 is a cross-sectional view showing another embodiment of the surface cleaning apparatus for a plate-shaped processing material according to the present invention.
１…真空容器、２…真空容器本体（陽極）、３…蓋体
（陰極）、４…絶縁材、６…処理材支持部材、８…永久
磁石、Ｗ…処理材。DESCRIPTION OF SYMBOLS 1 ... Vacuum container, 2 ... Vacuum container main body (anode), 3 ... Lid body (cathode), 4 ... Insulating material, 6 ... Treatment material support member, 8 ... Permanent magnet, W ... Treatment material.
Claims (1)
体の周縁に絶縁材を介して取り付ける陰極を形成する蓋
体とからなる真空容器と、前記蓋体の内面に板状処理材
を近接して取り付ける支持部材と、前記蓋体の外面に処
理材の長手方向に平行移動する磁場発生源である磁石
と、で構成したことを特徴とする板状処理材の表面清浄
化装置。1. A vacuum container comprising a main body of a vacuum container forming an anode and a lid forming a cathode attached to the periphery of the container main body via an insulating material, and a plate-like treatment material close to the inner surface of the lid. 2. A surface cleaning apparatus for a plate-shaped processing material, comprising: a support member to be attached in a manner described above; and a magnet, which is a magnetic field generating source that moves parallel to the outer surface of the lid in the longitudinal direction of the processing material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7839191U JPH0530162U (en) | 1991-09-27 | 1991-09-27 | Plate cleaning equipment surface cleaning equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7839191U JPH0530162U (en) | 1991-09-27 | 1991-09-27 | Plate cleaning equipment surface cleaning equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0530162U true JPH0530162U (en) | 1993-04-20 |
Family
ID=13660718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7839191U Pending JPH0530162U (en) | 1991-09-27 | 1991-09-27 | Plate cleaning equipment surface cleaning equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0530162U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6063388A (en) * | 1983-09-14 | 1985-04-11 | Toshiba Corp | Dry etching device |
| JPS61199078A (en) * | 1985-02-28 | 1986-09-03 | Anelva Corp | Surface treating apparatus |
-
1991
- 1991-09-27 JP JP7839191U patent/JPH0530162U/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6063388A (en) * | 1983-09-14 | 1985-04-11 | Toshiba Corp | Dry etching device |
| JPS61199078A (en) * | 1985-02-28 | 1986-09-03 | Anelva Corp | Surface treating apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103165494A (en) | Cleaning device and method of polymer on reverse side of wafer | |
| JPH0530162U (en) | Plate cleaning equipment surface cleaning equipment | |
| JPS5943546B2 (en) | sputtering equipment | |
| JPS63253628A (en) | Plasma treatment apparatus | |
| JP3690372B2 (en) | Plasma processing equipment | |
| KR102392851B1 (en) | vacuum processing unit, dummy substrate unit | |
| JP2004124171A (en) | Plasma processing apparatus and method | |
| JP6422074B2 (en) | Vacuum processing equipment | |
| JPH05275350A (en) | Semiconductor manufacturing equipment | |
| JPH0681146A (en) | Magnetron sputtering device | |
| JP2004031493A5 (en) | ||
| JPH06168934A (en) | Sputtering method and sputtering equipment | |
| JP2003213410A5 (en) | ||
| JP3279762B2 (en) | Plasma processing equipment | |
| JPH04315797A (en) | Plasme processing device and method of cleaning plasma source thereof | |
| JPS6233761A (en) | Cleaning device for inside wall of vacuum vessel | |
| JPH06108244A (en) | Sputtering device | |
| JPS5943992B2 (en) | Ion processing equipment | |
| JPH07105380B2 (en) | Plasma processing device | |
| JPH01309966A (en) | Sputtering device | |
| KR200187373Y1 (en) | Sputtering apparatus | |
| JP2002093360A (en) | Vacuum treatment device | |
| JPH06280061A (en) | Magnetron type continuous treating method and device thereof | |
| JP2004211123A (en) | Device for irradiating charged particle | |
| JPS6053752B2 (en) | plasma cleaning equipment |