JP3279762B2 - Plasma processing equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus, and more particularly to a plasma processing apparatus used for a plasma CVD apparatus and an etching apparatus.

[0002]

2. Description of the Related Art FIG. 12 shows an example of a conventional plasma processing apparatus, and shows an example of an ECR plasma processing apparatus. In FIG. 12, microwave power is guided by a microwave waveguide 51, and the discharge chamber 5 is passed through a microwave introduction window 52.
3 is introduced. The vacuum chamber 54 is a metallic vacuum vessel, is maintained at a required reduced pressure by an exhaust mechanism (not shown), and is supplied with a reaction gas by a reaction gas introduction mechanism (not shown). The reaction gas supplied from the vacuum chamber 54 to the discharge chamber 53 is discharged by the introduced microwave power, thereby generating plasma. Then, the active species present in the plasma processes the surface of the processing target substrate 56 disposed on the substrate holding mechanism 55. An electromagnetic coil 57 for applying a magnetic field to the discharge space is provided around the discharge chamber 53.

[0003]

In a conventional ECR plasma processing apparatus, in actual substrate processing, a reaction product adheres to the inner wall of the discharge chamber 53, and the adhered reaction product drops onto the substrate 52 to be processed. Had the disadvantage of doing so.

An object of the present invention is to provide a self-cleaning mechanism at a portion forming a plasma generation / processing space, to prevent a reaction product attached to the portion from falling onto a substrate, and to always keep an inner wall surface of the space. An object of the present invention is to provide a plasma processing apparatus that is kept clean.

[0005]

According to the present invention, there is provided a plasma processing apparatus comprising: a main body container having a plasma generating container; an exhaust mechanism for reducing the pressure inside the main body container; and a reaction gas flowing into the main body container. A gas introduction mechanism for introducing, a mechanism for applying a magnetic field into the plasma generation vessel and supplying high frequency or microwave power to turn the reaction gas into plasma, and a substrate holding mechanism arranged in the main body vessel, further comprising: Around the space between the plasma generating vessel and the substrate holding mechanism, the space is rotatable around each rotation axis,
Are formed in a closed space having a gap between the electrodes.
Pole, and all of these electrodes are
Configured to rotate and flip their inner and outer surfaces
And a plurality of electrodes configured to form a plasma processing space connected to the internal space of the plasma generation container.

Another plasma processing apparatus according to the present invention includes a main body container, an exhaust mechanism for reducing the pressure inside the main body container, a gas introduction mechanism for introducing a reaction gas into the main body container, A mechanism for applying a magnetic field and supplying high frequency or microwave power to convert the reaction gas into a plasma, and a substrate holding mechanism disposed in the main body container, and further comprising a space around the substrate holding mechanism in the main body container. Around the respective rotation axis,
A plurality of spaces are formed in a closed space having a gap between the electrodes.
Electrodes and all of these electrodes are
And rotate them to flip their inner and outer surfaces.
A plurality of electrodes are provided, and the plurality of electrodes form a space for plasma generation and plasma confinement in the main body container.

Another plasma processing apparatus according to the present invention comprises a main body container, an exhaust mechanism for reducing the pressure inside the main body container, a gas introduction mechanism for introducing a reaction gas into the main body container, A mechanism for applying a magnetic field and a high frequency to the reaction gas to convert the reaction gas into a plasma, and an electrode mechanism including two opposed electrodes arranged in the main body container, and further, a space between the two opposed electrodes in the main body container. Around each rotation
It is rotatable around the axis, and the space above is
A plurality of electrodes formed in a closed space having
Rotate all of these electrodes at a predetermined timing and
A plurality of electrodes configured to reverse the inner surface and the outer surface are provided, and the plurality of electrodes are configured to form a space for plasma generation and plasma confinement in the main body container.

In the above configuration, preferably, a DC bias or an AC bias is applied to the electrode.

In the above configuration, preferably, the electrode is provided with a temperature adjusting mechanism.

[0010] In the above configuration, preferably, the surface of the electrode is coated with a substance different from the electrode body.

In the above configuration, a permanent magnet or an electromagnetic coil is preferably provided inside the electrode.

[0012]

In the plasma processing apparatus according to the present invention, a plurality of rotatable electrodes are provided around the space above the substrate holding mechanism on which the substrate to be processed is mounted or the counter electrode, and the internal space is defined by the plurality of electrodes. To form a plasma processing space. The rotation operation of the plurality of electrodes is performed at an arbitrary timing, and by performing the rotation operation, the inner surface and the outer surface of the electrode can be inverted. A required gap is formed between the plurality of electrodes. When the reaction gas is supplied to the plasma processing space and a magnetic field and a high frequency or microwave are introduced, the reaction gas is turned into plasma. The substrate to be processed is processed by the plasma generated in the plasma processing space. Since the lines of magnetic force cross the portion of each electrode facing the plasma processing space, charged particles moving along the lines of magnetic force enter, thereby accumulating reaction products on the portions. Therefore, when the plasma processing of the substrate to be processed is completed, by rotating all of the plurality of appropriately rotatable electrodes, the inner surface and the outer surface of each electrode are inverted, and the surface on which the reaction product is attached is removed by plasma. Orient in a direction that is negative to the processing space. In this state, when plasma processing is performed again on the next substrate to be processed, the portion of the electrode to which the reaction product adheres diffuses from the gap between the electrodes without receiving the impact of ions moving along the lines of magnetic force. Exposure to coming neutral active species. The reaction product attached to the electrode can be removed by the neutral active species. This action cleans the electrode.

The surface of the electrode facing the plasma processing space will always face the surface of the cleaned electrode, so that the reaction chamber is kept clean with minimal reaction products. . This prevents the reaction product from falling onto the substrate to be processed. At the same time, since the state of the inner wall in the plasma processing space can be always kept constant, the state of the plasma generated by the discharge becomes constant, and the reproducibility of the plasma processing of the substrate to be processed is improved.

Further, by providing a predetermined coating film on the outer surface of the electrode and providing a mechanism for adjusting the temperature inside the electrode, the self-cleaning function of the electrode is enhanced. According to the coating film, it is possible to prevent the electrode itself from being sputtered and becoming a contamination source for the substrate to be processed. According to the temperature adjustment mechanism,
The temperature is controlled so that the quality of the film of the reaction product attached to the portion of the electrode facing the plasma processing space is made dense, so that the attached reaction product is difficult to peel off. Further, the portion of the electrode that is shaded by the plasma processing space has a self-cleaning function that is improved by setting the temperature to promote the cleaning by the neutral active species.

According to the configuration in which a DC or AC bias is applied to the electrode, the space potential of the plasma generation space can be arbitrarily controlled, whereby the energy of ions entering the substrate to be processed can be controlled, You can control damage.

When a permanent magnet or an electromagnetic coil is provided inside the electrode to form a plurality of magnetic poles to form a multi-pole magnetic field, it becomes difficult for ions to be incident on the electrode. At the same time, the amount of reaction products deposited on the electrode can be reduced.

According to the structure in which the plasma generating space is formed by using the electrodes in the vacuum vessel main body, the self-cleaning function can be enhanced by increasing the surface of the electrodes that can be self-cleaned.

[0018]

Embodiments of the present invention will be described below with reference to the accompanying drawings.

FIG. 1 shows the configuration of a plasma processing apparatus according to the present invention. In FIG. 1, reference numeral 1 denotes a metal vacuum chamber whose inside is maintained at a predetermined reduced pressure when processing is performed, and is maintained at a ground potential by a ground 1a. A substrate holding mechanism 2 is disposed inside the vacuum chamber 1, and a substrate 3 to be processed is placed on the substrate holding mechanism 2. A DC power supply 4A and an AC power supply 5A are connected to the substrate holding mechanism 2. A discharge chamber 6 is formed on the upper wall of the vacuum chamber 1 and above the substrate holding mechanism 2, and a microwave waveguide 8 is connected to the discharge chamber 6 via a microwave introduction window 7. The microwave introduction window 7 faces the substrate holding mechanism 2. A plurality of rotatable electrodes 9 are provided around a space between the discharge chamber 6 and the substrate holding mechanism 2. A space closed by the plurality of electrodes 9 is formed, and this space is connected to the internal space of the discharge chamber 6,
One discharge space, that is, a plasma processing space is formed. The plurality of electrodes 9 are attached to an electrode support member 9b provided around the substrate holding mechanism 2.

FIG. 2 is a diagram showing the plurality of electrodes 9 as viewed from above. FIG. 2 shows a view of the substrate holding mechanism 2 and the substrate 3 placed thereon together with the plurality of electrodes 9 as viewed from above. In this embodiment, for example, thirteen electrodes 9 are provided. As shown in FIG. 2, the thirteen electrodes 9 are arranged on the electrode supporting member 9b at positions surrounding the space above the substrate 3 and the substrate holding mechanism 2, and are arranged in a circle as a whole. Is done. Actually, the internal space surrounded by the plurality of electrodes 9 is a plasma processing space in which plasma for processing the substrate 3 is generated, and is connected to the inside of the discharge chamber 6. The space around the plurality of electrodes 9 is a space on the vacuum chamber 1 side.

The electrode 9 is shown in FIG. 2 as a line segment for simplicity for convenience, but actually has a predetermined thickness and is provided with a structure such as a temperature control mechanism inside. Each of the electrodes 9 is attached so as to be rotatable on a rotating shaft 9a arranged in a vertical direction in FIG. 1 and in a direction perpendicular to the paper surface in FIG. The plurality of electrodes 9 have a rotation axis 9a.
Is rotated by a required angle in a required direction by a rotation drive device (not shown). The rotation operation of the plurality of electrodes 9 is performed simultaneously in the same manner in conjunction with each other. The size, number, etc. of the electrodes 9 depend on the processing conditions, and the shape and arrangement of the rotatable electrodes make it possible to achieve optical opacity to the space being plasma-treated. A DC power supply 4B and an AC power supply 5B are connected to the plurality of electrodes 9 so that a DC bias or an AC bias can be applied to each of them. The internal structure of the electrode 9 will be described later.

An evacuation mechanism 10 is provided in the vacuum chamber 1, and the evacuation mechanism 10 evacuates the internal spaces of the vacuum chamber 1 and the discharge chamber 6 to a required reduced pressure state.
For the exhaust mechanism 10, an oil diffusion pump, a turbo pump, an oil rotary pump, or the like is used. The vacuum chamber 1 is provided with a reaction gas introduction mechanism 11. Around the discharge chamber 6, an electromagnetic coil 120 for applying a magnetic field for generating a magnetic field is provided.

The operation relating to the plasma processing in the plasma processing apparatus is as follows.

First, the interior space of the vacuum chamber 1 and the discharge chamber 6 is evacuated to a required reduced pressure by the exhaust mechanism 10, and then the reaction gas is introduced into the diffusion chamber 1 by the reaction gas introduction mechanism 11. And maintain the reduced pressure state. The reaction gas introduced into the vacuum chamber 1 enters the inside of the discharge chamber 6. In this state, a microwave is introduced into the discharge chamber 6 through the microwave waveguide 8 and the microwave introduction window 7, and a magnetic field is applied by the electromagnetic coil 120. Electromagnetic coil 120
The lines of magnetic force of the magnetic field given by Microwave discharge is performed in the discharge chamber 6 by the microwaves and the magnetic field, the reaction gas introduced into the vacuum chamber 1 is turned into plasma, and the activated substrate 3 is placed on the substrate holding mechanism 2 by the active species. Treat the surface. During this process, the reaction product 12 adheres to the portion of each electrode 9 facing the plasma processing space, that is, the inner surface, together with the charged particles (ions) moving along the lines of magnetic force.

In the plasma processing, as described above, the reaction product 12 adheres to the portion of the electrode 9 facing the plasma processing space, but the reaction product that adheres is removed based on the rotation of the electrode 9. be able to. Hereinafter, this operation will be described with reference to FIGS. 3 and 4 are enlarged views of the right half of the configuration shown in FIG.

With respect to the state of the plurality of rotatable electrodes 9, as is apparent from the change from the state of FIG. 3 to the state of FIG. The rotation shaft 9a is rotated counterclockwise at a predetermined angle. In this case, when the amount of the reaction product 12 attached to the electrode 9 is large, the electrode 9 is rotated every one to several times. In addition, when the amount of reaction product generated or deposited in one treatment is small, the reaction product 1
2 is detected and the electrode 9 is rotated at an appropriate timing. Here, one process refers to a series of processes performed on one substrate to be processed 3 set on the substrate holding mechanism 2 of the vacuum chamber 1. When the rotation is performed in one process, it is an appropriate timing before the plasma processing of a certain substrate 3 is completed and before the plasma processing of the next substrate 3 is performed. Further, in order to detect the amount of the reaction product 12, it is necessary to provide a dedicated detection unit.

Consider a case where a large amount of reaction product adheres to the portion of the electrode 9 facing the plasma processing space in one process. As is clear from FIGS. 3 and 4, 1
Each time the electrode 9 is rotated counterclockwise by a predetermined angle, the direction of the electrode 9 is changed so that the surface on which the reaction product 12 adheres is on the back side with respect to the plasma processing space (inner space). Then, when the same plasma processing as described above is performed again on another substrate to be processed disposed in the plasma processing space, the neutral active species of the plasma generated in the plasma processing space is indicated by an arrow 13 in FIG. As shown in the figure, it diffuses outward from a gap formed between the plurality of electrodes 9. The reaction products 12 attached to the surface of the electrode 9 are removed by the neutral active species of the plasma diffused from the gap between the electrodes 9, and the electrode surface is cleaned. At this time, since the ions move along the lines of magnetic force, they do not diffuse outward from the gap between the electrodes 9. The reaction product adheres again to the portion (inner surface) facing the plasma processing space in each of the plurality of electrodes 9, but the outer surface to which the reaction product adheres is cleaned by the neutral active species. After the plasma processing is completed, the electrode 9 is rotated clockwise again by a predetermined angle. Then, in the next plasma treatment, the inner surface of the electrode 9 is clean, and the surface to which the reaction product adheres becomes the outer surface, and the same cleaning as described above is performed. In this manner, the inner wall surface of the reaction chamber (plasma processing space) in which plasma is generated, that is, the inner side surface formed by the plurality of electrodes 9 is always kept at a constant cleanliness when the plasma processing is performed. As a result, the discharge conditions become constant, and reproducibility of the plasma processing can be obtained. Also, the yield can be increased, and the time between maintenance can be lengthened. The control regarding the rotation operation of the plurality of electrodes 9 as described above is performed based on a command from a control unit (not shown).

In the process when the amount of the reaction product deposited on the electrode 9 is small, the amount of the reaction product generated is detected by using a detection unit (not shown), and the electrode 9 is inverted at an appropriate timing. 9, the same effect as in the case where the amount of the reaction product deposited is large can be obtained.

Further, by applying a DC bias or an AC bias to each electrode 9 as described above, the space potential of the plasma generated by the discharge can be controlled. This makes it possible to control the energy of ions entering the target substrate 3 and control the processing speed, damage, and the like of the target substrate 3.

Next, an example of the internal structure of the electrode 9 will be described with reference to FIGS. 5 and 6, reference numeral 21 denotes a rotatable flat plate-shaped electrode body, in which a temperature adjusting mechanism 22 and a heater 23 are provided inside the electrode body 21, and a coating film 24 is formed on an outer surface of the electrode body 21. Is done.
9a is a rotating shaft. In the arrangement shown in the figure, the temperature adjustment mechanism 22 is arranged on the plasma processing space side,
Is disposed on the vacuum chamber side. In the electrode 9, the outer surface of the electrode main body 21 is coated with another material different from the electrode main body, thereby preventing the substrate to be processed 3 from becoming a contamination source even if the electrode itself is sputtered. . The material of the coating film 24 is, for example, SiO ₂ , SiN or the like, or ceramic such as aluminum oxide, aluminum nitride, titanium oxide, titanium nitride or the like. In addition, at the time of etching, if coating with silicon, carbon or a carbon compound is performed, reactive ion etching itself prevents the reactive compound from adhering to the electrode itself and reduces the amount of etched carbon. It reacts with the neutral active species to form volatile saturated species, so that the selectivity can be improved.

The temperature adjusting mechanism 2 provided inside the electrode 9
By means of 2, the temperature of the portion facing the plasma processing space can be controlled to any temperature. Temperature adjustment mechanism 22
Are arranged on both sides as shown in FIG. 6 and each include a heater and a cooling device. By adjusting the temperature of the temperature adjusting mechanism 22, the film quality of the reaction product attached to the electrode 9 can be made dense, and the reaction product can be prevented from dropping. Further, in the case where the portion of the electrode 9 facing the plasma processing space becomes negative due to the rotating action, the temperature of the electrode surface in the portion is increased, so that another heater 23 or an external heater is used as needed. This can facilitate the removal of reaction products from the electrode by the diffused plasma. It is possible to heat the portion of the electrode 9 to which the reaction product of the other adjacent electrode is attached by the heater 23 always attached to the portion facing the vacuum chamber. In this manner, the plurality of electrodes 9 have a self-cleaning function and can be enhanced by the temperature adjustment mechanism 22 and the heater 23 incorporated in the electrode 9 itself.

As shown in FIG. 7, in the electrode 9,
By forming the vacuum space 25 between the two temperature adjusting mechanisms 22 arranged on both sides in the electrode body 21, the temperature adjustment can be facilitated.

Further, by providing a permanent magnet or an electromagnetic coil inside the electrode 9, a multipole type structure can be formed to have a plasma confinement function.
FIGS. 8 and 9 show an embodiment of the present invention, in which, for example, two permanent magnets or electromagnetic coils 26 are arranged in a space formed between two temperature adjusting mechanisms 22 in parallel with the rotating shaft 9a. Other structures are the same as those described with reference to FIGS. 5 and 6, and thus are denoted by the same reference numerals. According to this structure, since the amount of charged particles incident on the electrode 9 decreases,
There is an advantage that the amount of the reaction product attached is reduced, and as a result, the reaction product is easily removed.

Next, another embodiment of the plasma processing apparatus according to the present invention will be described with reference to FIG. In this embodiment, without providing the discharge chamber 6 special, it has a configuration which forms a discharge space and the reaction space by way of examples and similar rotatable plurality of conductive Gokuji only above. 10, the same elements as those described in FIG. 1 are denoted by the same reference numerals. 10, 1 is a vacuum chamber, 2 is a substrate holding mechanism, 3 is a substrate to be processed, 8 is a microwave waveguide, and 19 is a plurality of rotatable electrodes. The electrode 19 of this embodiment is formed so that the surface area thereof is larger than that of the electrode of the above embodiment, and is rotatably mounted on the electrode support member 19b around the rotation axis 19a. In this embodiment, the microwave waveguide 8 is directly connected to the upper wall of the vacuum chamber 1 via the microwave introduction window 7. A magnetic field applying electromagnetic coil 120 for generating a magnetic field is provided around the microwave waveguide 8. The inside of the vacuum chamber 1 is divided into two spaces by a plurality of rotatable electrodes 19. The first space is an internal space formed by the plurality of electrodes 19, and is a space between the microwave introduction window 7 and the substrate holding mechanism 2. This space is a plasma processing space for discharge and reaction. The second space is an external space of the plurality of electrodes 1-9, a space of the vacuum chamber 1. Other configurations are the same as those of the above-described embodiment. The operation of the plasma processing apparatus according to this embodiment is the same as the operation of the above-described embodiment.

In this embodiment, a plurality of rotatable electrodes 19
By configuring the space formed by the substrate holding mechanism 2 as a plasma processing space for discharge and reaction, it is not necessary to provide a special discharge chamber,
The configuration can be simplified as a whole. In addition, the area of the electrode that can be self-cleaned is increased, whereby the self-cleaning function can be improved.

In each of the above embodiments, an example of a plasma processing apparatus using ECR plasma has been described. However, the present invention is also applicable to a plasma processing apparatus having a discharge chamber for plasma generation and a reaction chamber for performing actual processing. Of course, the effect can be obtained.

FIG. 11 shows an embodiment in which the configuration of the plasma processing apparatus according to the present invention is applied to a reactive ion etching apparatus using a magnetic field (a so-called magnetron RIE apparatus). In this embodiment, two electrodes, ie, an anode 31 and a cathode 32, are arranged in parallel in the vacuum chamber 1 so as to face each other.
A plurality of rotatable electrodes 29 are arranged around a space between the electrodes. The electrode 29 of this embodiment is formed so that its surface area is larger than that of the electrode 9 of the above embodiment, and the rotating shaft 2 is provided between two electrode support members 29b.
It is attached rotatably around 9a. A high frequency power supply 33 is connected to each of the anode 31 and the cathode 32. The configuration and operation of the electrode 29 are the same as those of the above-described embodiments. The substrate to be processed 3 is placed on the cathode 32. An electromagnetic coil 120 for applying a magnetic field is arranged around the vacuum chamber 1. Other configurations
For a, the same as in the previous embodiment. The illustration of the exhaust mechanism and the reaction gas introduction mechanism is omitted.

In the above configuration, the reduced pressure state as described in each of the above embodiments is created in the vacuum chamber 1, and a reaction gas is introduced into the vacuum chamber 1 by a reaction gas introduction mechanism. A high frequency power supply 3 in a plasma processing space formed by a plurality of rotatable electrodes 29.
3 and a magnetic field by the electromagnetic coil 120 to generate a high-frequency discharge. Thereby, the reaction gas is activated, and the substrate 3 on the cathode 32 is processed by the generated active species. The reaction product as described in the examples at this time adheres to the inner surface of the electrode 29, but on the basis of the above-mentioned action in the electrodes 29, reaction products adhering to the surface of the electrode 2 9 facing the plasma processing space The object is removed.

[0039] Also in this embodiment, the inner wall surface of the reaction chamber formed by a plurality of electrodes 2 9 can always be kept constant cleanliness, discharge condition becomes constant, increase the reproducibility of the process be able to. Further, the yield can be increased and the time interval for performing maintenance can be lengthened.

In the first embodiment shown in FIG. 1 and the second embodiment shown in FIG. 10, power may be supplied by using a high frequency instead of a microwave.

[0041]

As apparent from the above description, according to the present invention, in a plasma processing apparatus, a plurality of rotatable electrodes are arranged around a space where plasma is generated and processing is performed using the plasma. However, since these electrodes are rotated in an inverted state at an appropriate timing in connection with the plasma processing, it is possible to have a function of removing reaction products attached in relation to the neutral active species, and to perform self-cleaning. Functions can be provided. Thus, the inner surface during the plasma processing can be kept clean at all times, so that reproducibility in the processing of the substrate to be processed can be obtained. In addition, since the temperature adjustment function is provided inside the electrode, the film quality of the reaction product attached to the electrode is made dense,
The occurrence of peeling can be suppressed. A multipole type is provided by providing a magnet or the like in the electrode, whereby the adhesion of a reaction product to the electrode can be suppressed.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a first embodiment of a plasma processing apparatus according to the present invention.

FIG. 2 is a plan view of an electrode shown in FIG. 1 and a peripheral portion thereof.

FIG. 3 is a partially enlarged view of FIG. 2;

FIG. 4 is a partially enlarged view of another embodiment of FIG. 2;

FIG. 5 is a front structural view showing the internal structure of the electrode.

FIG. 6 is a cross-sectional view showing the internal structure of the electrode.

FIG. 7 is a cross-sectional view showing another embodiment of the internal structure of the electrode.

FIG. 8 is a front structural view showing another embodiment of the internal structure of the electrode.

FIG. 9 is a cross-sectional view of the embodiment shown in FIG.

FIG. 10 is a sectional view showing a second embodiment of the plasma processing apparatus according to the present invention.

FIG. 11 is a sectional view showing a third embodiment of the plasma processing apparatus according to the present invention.

FIG. 12 is a sectional view showing a conventional plasma processing apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Substrate holding mechanism 3 Substrate 6 Discharge chamber 7 Microwave introduction window 8 Microwave waveguide 9, 19, 29 Electrode 22 Temperature control mechanism 23 Heater 24 Coating film 26 Permanent magnet or electromagnetic coil

Claims (7)

(57) [Claims] 1. A main body container having a plasma generation container, an exhaust mechanism for reducing the pressure inside the main body container,
A gas introduction mechanism for introducing a reaction gas into the main body container, a mechanism for applying a magnetic field to the plasma generation container and supplying high frequency or microwave power to convert the reaction gas into plasma, and the main body container In a plasma processing apparatus including a substrate holding mechanism disposed in the space around the space between the plasma generating container and the substrate holding mechanism , rotatable around each rotation axis, the space
Are formed in a closed space having a gap between the electrodes.
Pole, and all of these electrodes are
Configured to rotate and flip their inner and outer surfaces
A plasma processing space provided with the plurality of electrodes, wherein the plurality of electrodes form a plasma processing space connected to an internal space of the plasma generating container. 2. A main body container, an exhaust mechanism for depressurizing the inside of the main body container, a gas introducing mechanism for introducing a reaction gas into the main body container, and applying a magnetic field to the inside of the main body container and applying a high frequency Alternatively, in a plasma processing apparatus including a mechanism for supplying microwave power to convert the reaction gas into plasma and a substrate holding mechanism disposed in the main body container, a space around the substrate holding mechanism in the main body container Is rotatable around each axis of rotation,
The surrounding space is formed as a closed space having a gap between electrodes.
Multiple electrodes, all of which are
Rotate at the timing to flip their inner and outer surfaces
A plasma processing apparatus comprising: a plurality of electrodes configured as described above ; and a space for generating and confining plasma in the main body container is formed by the plurality of electrodes. 3. A main body container, an exhaust mechanism for depressurizing the inside of the main body container, a gas introducing mechanism for introducing a reaction gas into the main body container, and applying a magnetic field and a high frequency to the inside of the main body container. A mechanism for converting the reaction gas into plasma by
In a plasma processing apparatus including an electrode mechanism including two opposed electrodes arranged in the main body container , each of the rotation axes of the respective rotation axes is provided around the space between the two counter electrodes in the main body container. Rotatable around the sky
A plurality of spaces are formed in a closed space having a gap between the electrodes.
Electrodes and all of these electrodes are
And rotate them to flip their inner and outer surfaces.
Comprising a plurality of electrodes, the plasma processing apparatus characterized by the formation of the space for the and for generating plasma in the body vessel by the plurality of electrodes plasma confinement. 4. The plasma processing apparatus according to claim 1, wherein a DC bias or an AC bias is applied to the electrode. 5. The plasma processing apparatus according to claim 1, wherein a temperature adjusting mechanism is provided on the electrode. 6. The plasma processing apparatus according to claim 1, wherein a surface of said electrode is coated with a material different from that of said electrode body. 7. The plasma processing apparatus according to claim 1, wherein a permanent magnet or an electromagnetic coil is provided inside the electrode.