JPS5943992B2 - Ion processing equipment - Google Patents
Ion processing equipmentInfo
- Publication number
- JPS5943992B2 JPS5943992B2 JP11644880A JP11644880A JPS5943992B2 JP S5943992 B2 JPS5943992 B2 JP S5943992B2 JP 11644880 A JP11644880 A JP 11644880A JP 11644880 A JP11644880 A JP 11644880A JP S5943992 B2 JPS5943992 B2 JP S5943992B2
- Authority
- JP
- Japan
- Prior art keywords
- ion
- plasma
- shower
- chamber
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Description
【発明の詳細な説明】
本発明は電子サイクロトロン共鳴型のイオン源を使用す
る式のイオンエッチング、イオンクリーニングその他の
イオン処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an ion etching, ion cleaning, and other ion processing apparatus using an electron cyclotron resonance type ion source.
従来この種装置として、イオン化室内に、外周の励磁ソ
レノイドにより磁場を生じさせる一方、導波管を介して
マイクロ波を導入して該室内に電子のサイクロトロン共
鳴を生じさせてプラズマを発生させ、該プラズマのイオ
ンをその前面の引出電極により引出してその前方の反応
室内にイオンシヤワを生じさせ、これを該室内のウェハ
その他のサブストレートに照射させてこれにイオンエッ
チングその他のイオン処理を施すようにした式のものは
知られるが、かゝるものでは該サブストレートが絶縁物
の場合該サブストレートはマイクロ秒の時間単位におい
て速かに帯電し、かくてイオン照射が不可能となる不都
合を伴う。本発明はかゝる不都合のない装置を得ること
をその目的とするもので、イオン化室内に、外周の励磁
ソレノイドにより磁場を生じさせる一方、導波管を介し
てマイクロ波を導入して該室内に電子のサイクロトロン
共鳴を生じさせてプラズマを発生させ、該プラズマのイ
オンをその前面の引出電極により引出してその前方の反
応室内にイオンシヤワを生じさせ、これを該室内のウェ
ハその他のサブストレートに照射させてこれにイオンエ
ッチング、イオンクリーニングその他のイオン処理を施
すようにした式のものにおいて、該引出電極における負
の電位の電極に該イオン化室内にのびるセラミックスそ
の他の絶縁物製のカップを備えて該カップ内に負の電位
のプラズマを生じさせ、該プラズマの電子を該引出電極
における接地電位の電極により引出して電子シヤワを生
じさせ、これを前記したイオンシヤワと共に前記したサ
ブストレートに照射させるようにして成る。Conventionally, this type of device generates a magnetic field in the ionization chamber by an excitation solenoid on the outer periphery, while introducing microwaves through a waveguide to generate cyclotron resonance of electrons in the chamber to generate plasma. Plasma ions are extracted by an extraction electrode in front of the plasma to generate an ion shower in the reaction chamber in front of the plasma, and wafers and other substrates in the chamber are irradiated with the ion shower to perform ion etching and other ion processing on the wafers and other substrates. Methods of this type are known, but such methods have the disadvantage that when the substrate is an insulator, the substrate is rapidly charged in a time unit of microseconds, thus making ion irradiation impossible. The purpose of the present invention is to obtain an apparatus free from such inconveniences, and while a magnetic field is generated in the ionization chamber by an excitation solenoid on the outer periphery, microwaves are introduced through a waveguide into the chamber. Cyclotron resonance of electrons is generated to generate plasma, and the ions of the plasma are extracted by an extraction electrode in front of the plasma to create an ion shower in the reaction chamber in front of it, which is then irradiated onto wafers and other substrates in the chamber. In a method in which ion etching, ion cleaning, or other ion processing is performed on the ionization chamber, a cup made of ceramic or other insulating material extending into the ionization chamber is provided on the negative potential electrode of the extraction electrode. Plasma with a negative potential is generated in the cup, electrons of the plasma are extracted by an electrode with a ground potential in the extraction electrode to generate an electron shower, and the above-described substrate is irradiated with this along with the ion shower. Become.
本発明実施の1例を別紙図面に付説明する。An example of implementing the present invention will be explained with reference to the attached drawings.
図面で1は比較的大口径の円胴状のイオン化室を示し、
該室1内に外周の励磁ソレノイド2により励磁を生じさ
せる一方、これにその背面からマグネトロンによるマイ
クロ波を比較的小口径の導波管3を介して導入させ、か
くて該室1内には電子のサイクロトロン共鳴を生じてプ
ラズマが発生されるようにした。該プラズマのイオンは
その前面の引出電極4で引出されてその前方の反応室5
内にイオンシヤワを生じ、該シヤワは該室5内のターン
テーブル6止のウエハその他のサブストレート7を照射
し、これにイオンエツチング或はイオンクリーニング等
のイオン処理が施されるようにした。図面で8は真空ポ
ンプに連る排気口、9は該室1内に反応ガスを導く給気
口を示す。尚前記した引出電極4は正の電位、例えば+
1ボルトの第1電極4aと、その前方の負の電位、例え
ば−V2ボルトの第2電極4bと、その前方の接地電位
の第3電極4cとから構成され、該第1電極4aによれ
ば該室1内の前記したプラズマはその電位即ち+,ボル
トに近い正の電位例えば+V/ボルトのプラズマに保持
されると共に該第2電極4bは主として引出し作用を営
み、更に該第3電極4cは主として減速作用を営むもの
で、以上は従来のものと特に異らない。本発明によれば
、該第2電極4bから該室1内にのびのアルミナその他
のセラミツクス製のカツプ10の少くとも1個を備えて
該カツプ10内に負の電位のプラズマを生じさせ、該プ
ラズマの電子を該第3電極4cにより引出して電子シヤ
ワとし、これを前記したイオンシヤワと共に前記したサ
ブストレート7に照射させる。In the drawing, 1 indicates a cylindrical ionization chamber with a relatively large diameter.
While excitation is generated in the chamber 1 by an excitation solenoid 2 on the outer periphery, microwaves generated by a magnetron are introduced from the back side of the chamber 1 through a waveguide 3 having a relatively small diameter. Plasma was generated by causing electron cyclotron resonance. The ions of the plasma are extracted by the extraction electrode 4 in front of the plasma, and are drawn out into the reaction chamber 5 in front of the extraction electrode 4.
An ion shower is generated within the chamber 5, and the shower irradiates the wafer or other substrate 7 on the turntable 6 in the chamber 5, so that it is subjected to ion processing such as ion etching or ion cleaning. In the drawing, reference numeral 8 indicates an exhaust port connected to a vacuum pump, and reference numeral 9 indicates an air supply port that introduces a reaction gas into the chamber 1. Note that the extraction electrode 4 described above has a positive potential, for example, +
It is composed of a first electrode 4a with a voltage of 1 volt, a second electrode 4b with a negative potential in front of it, for example -V2 volts, and a third electrode 4c with a ground potential in front of it, and according to the first electrode 4a. The above-mentioned plasma in the chamber 1 is maintained at a positive potential close to +V/volt, for example, +V/volt, and the second electrode 4b mainly performs an extraction function, and the third electrode 4c It mainly performs a deceleration effect, and the above is not particularly different from conventional ones. According to the present invention, at least one cup 10 made of alumina or other ceramic is provided in the chamber 1 from the second electrode 4b to generate a negative potential plasma in the cup 10. Electrons from the plasma are extracted by the third electrode 4c to form an electron shower, and the above-described substrate 7 is irradiated with this electron shower together with the above-described ion shower.
これを詳述すれば、該カツプ10は該電極4b上に必要
に応じ複数個例えば図示のように12個に配置されるが
、各1個は該室1内の前記した電子サイクロトロン共鳴
を生ずる領域迄長手にのび、かくて該カツプ10内には
同じく電子サイクロトロン共鳴によりプラズマを生ずる
がこのプラズマは該電極4bの電位、即ち一2ボルトに
近い負の電位、即ち2′ボルトのプラズマとなり、該プ
ラズマの電子はその前方の前記した第3電極4cにより
その前方に引出されて電子シヤワとなるようにした。こ
れは第3図に略図時に示され、図中1はイオン、eは電
子を示す。ごの電子シヤワは前記したイオンシヤワと共
に前記したサブストレート7を照射するもので、かくて
該サブストレート7が絶縁物の場合においても前記した
イオンシヤワのみの場合の帯電がなく、イオンシヤワが
入射してそれにイオン処理が施される。To be more specific, a plurality of cups 10, for example, 12 cups as shown in the figure, are arranged on the electrode 4b as necessary, and each cup 10 produces the above-mentioned electron cyclotron resonance in the chamber 1. The electron cyclotron resonance generates a plasma within the cup 10, but this plasma has a negative potential close to the potential of the electrode 4b, that is, 12 volts, that is, 2' volts. The electrons of the plasma are drawn forward by the third electrode 4c in front of it to form an electronic shower. This is shown schematically in FIG. 3, where 1 represents an ion and e represents an electron. The electronic shower irradiates the substrate 7 with the ion shower described above, so that even if the substrate 7 is an insulator, there is no charge as in the case of only the ion shower, and the ion shower is incident on the substrate 7. Ion treatment is performed.
このように本発明によるときはイオン化室内に正の電位
のプラズマを生じさせてこれからイオンシヤワを取出す
と共にカツプ内に負の電位のプラズマを生じさせてこれ
から電子シヤワを取出し、その両者をサブストレートに
作用させるもので、該サブストレートが絶縁物の場合に
おいてもこれに該イオンシヤワによるイオン処理を与え
ることが出来、従来のものの前記した不都合がない効果
を有する。In this way, according to the present invention, a plasma with a positive potential is generated in the ionization chamber and an ion shower is extracted from it, and a plasma with a negative potential is generated in the cup and an electron shower is extracted from it, and both act on the substrate. Even if the substrate is an insulator, it can be subjected to ion treatment by the ion shower, and has the advantage of not having the above-mentioned disadvantages of the conventional method.
第1図は本発明装置の1例の截断側面図、第2図はその
−線截断面図、第3図はその作動の説明線図である。
1・・・・・・イオン化宰、2・・・・・・励磁ソレノ
イド、3・・・・・・導波管、4・・・・・・引出電極
、4a,4b,4c・・・・・・第1第2第3電極、5
・・・・・・反応室、7・・・・・・サブストレート、
10・・・・・・カツプ。FIG. 1 is a cross-sectional side view of one example of the device of the present invention, FIG. 2 is a cross-sectional view taken along the line 2, and FIG. 3 is a diagram illustrating its operation. 1... Ionization control, 2... Excitation solenoid, 3... Waveguide, 4... Extraction electrode, 4a, 4b, 4c... ...first, second and third electrodes, 5
...Reaction chamber, 7...Substrate,
10...Katsupu.
Claims (1)
を生じさせる一方、導波管を介してマイクロ波を導入し
て該室内に電子のサイクロトロン共鳴を生じさせてプラ
ズマを発生させ、該プラズマのイオンをその前面の引出
電極により引出してその前方の反応室内にイオンシヤワ
を生じさせ、これを該室内のウェハその他のサブストレ
ートに照視させてこれにイオンエッチング、イオンクリ
ーニングその他のイオン処理を施すようにした式のもの
において、該引出電極における負の電位の電極に該イオ
ン化室内にのびるセラミックスその他の絶縁物製のカッ
プを備えて該カップ内に負の電位のプラズマを生じさせ
、該プラズマの電子を該引出電極における接地電位の電
極により引出して電子シヤワを生じさせ、これを前記し
たイオンシヤワと共に前記したサブストレートに照射さ
せるようにして成るイオン処理装置。1 A magnetic field is generated in the ionization chamber by an excitation solenoid on the outer periphery, while microwaves are introduced through a waveguide to generate cyclotron resonance of electrons in the chamber to generate plasma, and the ions of the plasma are A method in which an ion shower is produced in the reaction chamber in front of the extraction electrode by a front extraction electrode, and the ion shower is illuminated onto a wafer or other substrate in the chamber to perform ion etching, ion cleaning, or other ion processing. In this method, a cup made of ceramic or other insulating material extending into the ionization chamber is provided on the negative potential electrode of the extraction electrode, a plasma having a negative potential is generated in the cup, and the electrons of the plasma are extracted from the extraction electrode. An ion processing device comprising an ion processing device which generates an electronic shower by extracting it with an electrode at a ground potential, and irradiates the substrate with the electron shower together with the ion shower.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11644880A JPS5943992B2 (en) | 1980-08-26 | 1980-08-26 | Ion processing equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11644880A JPS5943992B2 (en) | 1980-08-26 | 1980-08-26 | Ion processing equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5741375A JPS5741375A (en) | 1982-03-08 |
JPS5943992B2 true JPS5943992B2 (en) | 1984-10-25 |
Family
ID=14687359
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11644880A Expired JPS5943992B2 (en) | 1980-08-26 | 1980-08-26 | Ion processing equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5943992B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0425723Y2 (en) * | 1986-09-22 | 1992-06-19 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2531134B2 (en) * | 1986-02-12 | 1996-09-04 | 株式会社日立製作所 | Plasma processing device |
JPH062940B2 (en) * | 1986-09-18 | 1994-01-12 | 学校法人大同学園 | Method of depositing thin film on substrate |
-
1980
- 1980-08-26 JP JP11644880A patent/JPS5943992B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0425723Y2 (en) * | 1986-09-22 | 1992-06-19 |
Also Published As
Publication number | Publication date |
---|---|
JPS5741375A (en) | 1982-03-08 |
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